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Consider a long-channel $NMOS$ transistor with source and body connected together. Assume that the electron mobility is independent of $V_{GS}$ and $V_{DS}.$ Given,

$g_{m}=0.5\mu A/V \text{ for } V_{DS}=50\:mV \text{ and } \: V_{GS}= 2 \: V$,

$g_{d}=8\mu A/V \text{ for } V_{GS}=2\:V \text{ and }V_{DS}=0 \:V$, where $g_{m}=\frac{\partial I_{D}}{\partial V_{GS}}$ $and$ $g_{d}=\frac{\partial I_{D}}{\partial V_{DS}}$

The threshold voltage (in volts) of the transistor is _________
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