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Recent questions tagged nmos-transistor
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GATE ECE 2019 | Question: 40
In the circuits shown the threshold voltage of each $\text{nMOS}$ transistor is $0.6\:V.$ Ignoring the effect of channel length modulation and body bias. the values of $\text{Vout}1$ and $\text{Vout} 2,$ respectively, in volts, are $1.8$ and $1.2$ $2.4$ and $2.4$ $1.8$ and $2.4$ $2.4$ and $1.2$
In the circuits shown the threshold voltage of each $\text{nMOS}$ transistor is $0.6\:V.$ Ignoring the effect of channel length modulation and body bias. the values of $\...
Arjun
6.5k
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Arjun
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Feb 12, 2019
Analog Circuits
gate2019-ec
analog-circuits
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0
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2
GATE ECE 2016 Set 2 | Question: 12
A long-channel $NMOS$ transistor is biased in the linear region with $V_{DS}=50$ $m$ $V$ and is used as a resistance. Which one of the following statement is $NOT$ correct? If the device width $W$ is increased, the resistance ... decreases. If the device length $L$ is increased, the resistance increases. If $V_{GS}$ is incresed, the resistance increases.
A long-channel $NMOS$ transistor is biased in the linear region with $V_{DS}=50$ $m$ $V$ and is used as a resistance. Which one of the following statement is $NOT$ correc...
Milicevic3306
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Milicevic3306
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Mar 27, 2018
Analog Circuits
gate2016-ec-2
analog-circuits
nmos-transistor
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0
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3
GATE ECE 2016 Set 2 | Question: 38
Consider a long-channel $NMOS$ transistor with source and body connected together. Assume that the electron mobility is independent of $V_{GS}$ and $V_{DS}.$ ... $and$ $g_{d}=\frac{\partial I_{D}}{\partial V_{DS}}$ The threshold voltage (in volts) of the transistor is _________
Consider a long-channel $NMOS$ transistor with source and body connected together. Assume that the electron mobility is independent of $V_{GS}$ and $V_{DS}.$ Given,$g_{m}...
Milicevic3306
16.0k
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208
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Milicevic3306
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Mar 27, 2018
Analog Circuits
gate2016-ec-2
numerical-answers
analog-circuits
nmos-transistor
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1
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0
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4
GATE ECE 2015 Set 3 | Question: 34
The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be $1\: mA$ at a drain-source voltage of $5\: V.$ When the drain-source voltage was increased to $6\: V$ while keeping gate-source voltage same, the ... the applied drain-source voltage. The channel length modulation parameter $\lambda\:(\text{in}\: V^{-1})$ is _______.
The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be $1\: mA$ at a drain-source voltage of $5\: V.$ When the drain-source volta...
Milicevic3306
16.0k
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108
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Milicevic3306
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Mar 27, 2018
Analog Circuits
gate2015-ec-3
analog-circuits
nmos-transistor
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1
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5
GATE ECE 2015 Set 3 | Question: 40
In the circuit shown, both the enhancement mode NMOS transistors have the following characteristics:$k_{n} ݇ = \mu _{n}C_{ox}(W/L) = 1\:mA/V^{2};V_{TN} = 1V.$ Assume that the channel length modulation parameter $\lambda$ is zero ... supply voltage ܸ$V_{DD}$ (in volts) needed to ensure that transistor $M_{1}$ operates in saturation mode of operation is _______.
In the circuit shown, both the enhancement mode NMOS transistors have the following characteristics:$k_{n} ݇ = \mu _{n}C_{ox}(W/L) = 1\:mA/V^{2};V_{TN} = 1V.$ Assume tha...
Milicevic3306
16.0k
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96
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Milicevic3306
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Mar 27, 2018
Analog Circuits
gate2015-ec-3
numerical-answers
analog-circuits
nmos-transistor
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0
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0
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6
GATE ECE 2014 Set 1 | Question: 14
In the following circuit employing pass transistor logic, all NMOS transistors are identical with a threshold voltage of $1\: V.$ Ignoring the body-effect, the output voltage at $P,Q$ and $R$ are, $4\: V, 3\:V,2\:V$ $5\: V, 5\:V,5\:V$ $4\: V, 4\:V,4\:V$ $5\: V, 4\:V,3\:V$
In the following circuit employing pass transistor logic, all NMOS transistors are identical with a threshold voltage of $1\: V.$ Ignoring the body-effect, the output vol...
Milicevic3306
16.0k
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180
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Milicevic3306
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Mar 25, 2018
Analog Circuits
gate2014-ec-1
analog-circuits
electronic-devices
nmos-transistor
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0
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0
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7
GATE ECE 2018 | Question: 43
In the circuit shown below, the $(W/L)$ value for $M_{2}$ is twice that for $M_{1}$. The two $\text{nMOS}$ transistors are otherwise identical. The threshold voltage $V_{T}$ for both transistors is $1.0\:V$. Note that $V_{GS}$ for $M_{2}$ ... $V_{x}$ is ________.
In the circuit shown below, the $(W/L)$ value for $M_{2}$ is twice that for $M_{1}$. The two $\text{nMOS}$ transistors are otherwise identical. The threshold voltage $V_{...
gatecse
1.6k
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116
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gatecse
asked
Feb 19, 2018
Analog Circuits
gate2018-ec
numerical-answers
analog-circuits
nmos-transistor
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0
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0
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8
GATE ECE 2018 | Question: 1
Two identical $\text{nMOS}$ transistors $M_{1}$ and $M_{2}$ are connected as shown below. The circuit is used as an amplifier with the input connected between $\text{G and S}$ terminals and the output taken between $D\: \text{and}\: S$ terminals. $V_{bias}$ and $V_{D}$ are ... $g_{m}\approx g_{m1} \:\:\text{and}\:\: r_{o}\approx r_{o2}$
Two identical $\text{nMOS}$ transistors $M_{1}$ and $M_{2}$ are connected as shown below. The circuit is used as an amplifier with the input connected between $\text{G an...
gatecse
1.6k
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167
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gatecse
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Feb 19, 2018
Electronic Devices
gate2018-ec
analog-circuits
nmos-transistor
amplifier
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