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1723
GATE ECE 1993 | Question 6.16
In a microprocessor, the register which holds the address of the next instruction to be fetched is Accumulator Program Counter Stack Pointer Instruction Registor
In a microprocessor, the register which holds the address of the next instruction to be fetched isAccumulatorProgram CounterStack PointerInstruction Registor
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1724
GATE ECE 1999 | Question 2.18
The Nyquist sampling frequency (in $\mathrm{Hz}$ ) of a signal given by $6 \times 10^{4} \sin c^{2}(400 t)^{*} 10^{6} \sin c^{3}(100 t)$ is $200$ $300$ $500$ $1000$
The Nyquist sampling frequency (in $\mathrm{Hz}$ ) of a signal given by$6 \times 10^{4} \sin c^{2}(400 t)^{*} 10^{6} \sin c^{3}(100 t)$ is$200$$300$$500$$1000$
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1725
GATE ECE 1999 | Question: 3
In the circuit of the the switch '$\text{S}$' has remained open for a long time. The switch closes instantaneously at $t=0$ Find $V_{0}$ for $t \leq 0$ and as $t \rightarrow \infty$ Write an expression for $V_{0}$ as function of time for $0 \leq t \leq \infty$ Evaluate $\mathrm{V}_{0}$ at $t=25 \; \mu \mathrm{sec}$.
In the circuit of the the switch '$\text{S}$' has remained open for a long time. The switch closes instantaneously at $t=0$Find $V_{0}$ for $t \leq 0$ and as $t \rightarr...
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1726
GATE ECE 2004 | Question: 66
Let $x(t)$ and $y(t)$ (with Fourier transforms $X(f)$ and $Y(f)$ respectively) be related as shown in the given figure. Then $Y(f)$ is $-\frac{1}{2} X(f / 2) e^{-j 2 \pi f}$ $-\frac{1}{2} X(f / 2) e^{j 2 \pi f}$ $-X(f / 2) e^{j 2 \pi f}$ $-\mathrm{X}(f / 2) e^{-j2 \pi f}$
Let $x(t)$ and $y(t)$ (with Fourier transforms $X(f)$ and $Y(f)$ respectively) be related as shown in the given figure.Then $Y(f)$ is$-\frac{1}{2} X(f / 2) e^{-j 2 \pi f}...
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1728
GATE ECE 1994 | Question 3.10
If a pure resistance load, when connected to a lossless $75$ – ohm line, produces a $\text{VSWR}$ of $3$ on the line, then the load impedance can only be $25$ ohms.
If a pure resistance load, when connected to a lossless $75$ – ohm line, produces a $\text{VSWR}$ of $3$ on the line, then the load impedance can only be $25$ ohms.
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1729
GATE ECE 2008 | Question: 47
The OPAMP circuit shown above represents a high pass filter low pass filter band pass filter band reject filter
The OPAMP circuit shown above represents ahigh pass filterlow pass filterband pass filterband reject filter
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1731
GATE ECE 2011 | Question: 45
If $F(s)=L[f(t)]=\dfrac{2(s+1)}{s^2+4 s+7}$ then the initial and final values of $f(t)$ are respectively $0,2$ $2,0$ $0, 2 / 7$ $2 / 7,0$
If $F(s)=L[f(t)]=\dfrac{2(s+1)}{s^2+4 s+7}$ then the initial and final values of $f(t)$ are respectively$0,2$$2,0$$0, 2 / 7$$2 / 7,0$
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1732
GATE ECE 1999 | Question 2.21
Four independent messages have bandwidths of $100 \mathrm{~Hz}, 200 \mathrm{~Hz}$, and $400 \mathrm{~Hz}$, respectively. Each is sampled at the Nyquist rate, and the samples are time division multiplexed ($\text{TDM}$) and transmitted. The transmitted sample rate (in $\mathrm{Hz}$ ) is $1600$ $800$ $400$ $200$
Four independent messages have bandwidths of $100 \mathrm{~Hz}, 200 \mathrm{~Hz}$, and $400 \mathrm{~Hz}$, respectively. Each is sampled at the Nyquist rate, and the samp...
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1733
GATE ECE 2007 | Question: 67
A load of $50\; \Omega$ is connected in shunt in a $2$-wire transmission line of $Z_{0}=50 \;\Omega$ as shown in the figure. The $2$-port scattering parameter matrix $\text{(S-matrix)}$ ...
A load of $50\; \Omega$ is connected in shunt in a $2$-wire transmission line of $Z_{0}=50 \;\Omega$ as shown in the figure. The $2$-port scattering parameter matrix $\te...
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1735
GATE ECE 2004 | Question: 73
Given $A=\left[\begin{array}{ll}1 & 0 \\ 0 & 1\end{array}\right]$, the state transition matrix $e^{A t}$ is given by $\left[\begin{array}{cc}0 & e^{-t} \\ e^{-t} & 0\end{array}\right]$ ... $\left[\begin{array}{cc}0 & e^{t} \\ e^{t} & 0\end{array}\right]$
Given $A=\left[\begin{array}{ll}1 & 0 \\ 0 & 1\end{array}\right]$, the state transition matrix $e^{A t}$ is given by$\left[\begin{array}{cc}0 & e^{-t} \\ e^{-t} & 0\end{a...
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1736
GATE ECE 2007 | Question: 72
The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a $\mathrm{Metal} / \mathrm{SiO}_{2} / \text{silicon (MOS)}$ capacitor having an area of $1 \times 10^{-4} \mathrm{~cm}^{2}$ ... $0.857 \; \mu \mathrm{m}$ $1 \; \mu \mathrm{m}$ $1.143 \; \mu \mathrm{m}$
The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a $\mathrm{Metal} / \mathrm{SiO}_{2} / \text{silicon (MOS)}$ capacitor having an area of ...
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