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2481
GATE ECE 2006 | Question: 44
An $\frac{\mathrm{I}}{\mathrm{O}}$ peripheral device shown in Figure $(b)$ below is to be interfaced to an $8085$ microprocessor. To select the $\frac{\mathrm{I}}{\mathrm{O}}$ device in the $\frac{\mathrm{I}}{\mathrm{O}}$ ... $(a)$ below output $7$ output $5$ output $2$ output $0$
An $\frac{\mathrm{I}}{\mathrm{O}}$ peripheral device shown in Figure $(b)$ below is to be interfaced to an $8085$ microprocessor. To select the $\frac{\mathrm{I}}{\mathrm...
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2483
GATE ECE 1994 | Question 4.8
(A) $\overrightarrow{\mathrm{V}} \times \overrightarrow{\mathrm{H}}=\overrightarrow{\mathrm{J}}$ (1)Continuity equation (B) $\int_{c} \vec{E} \cdot \overrightarrow{a_{t}}=-\frac{d}{f} \int \vec{B} \cdot \overrightarrow{d s}$ (2) Faraday's ... (3) Ampere's Law (4) Gauss's law (5) Biot-Savart law
(A) $\overrightarrow{\mathrm{V}} \times \overrightarrow{\mathrm{H}}=\overrightarrow{\mathrm{J}}$(1)Continuity equation(B) $\int_{c} \vec{E} \cdot \overrightarrow{a_{t}}=-...
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2487
GATE ECE 2000 | Question 2.21
A uniform plane wave in air impinges at $45^{\circ}$ angle on a lossless dielectric material with dielectric constant $\varepsilon_{r}$. The transmitted wave propagates in a $30^{\circ}$ direction with respect to the normal. The value of $\varepsilon_{r}$ is $1.5$ $\sqrt{1.5}$ $2$ $\sqrt{2}$
A uniform plane wave in air impinges at $45^{\circ}$ angle on a lossless dielectric material with dielectric constant $\varepsilon_{r}$. The transmitted wave propagates i...
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2489
GATE ECE 2001 | Question: 1.13
An $8085$ microprocessor based system uses a $4 \mathrm{K} \times 8 \text{bit RAM}$ whose starting address is $\text{AA00 H}$. The address of the last byte in this $\text{RAM}$ is $\text{OFFF H}$ $1000 \; \mathrm{H}$ $\text{B9FF H}$ $\text{BAOO H}$
An $8085$ microprocessor based system uses a $4 \mathrm{K} \times 8 \text{bit RAM}$ whose starting address is $\text{AA00 H}$. The address of the last byte in this $\text...
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2490
GATE ECE 2001 | Question: 2.23
A uniform plane electromagnetic wave incident normally on a plane surface of a dielectric material is reflected with a VSWR of $3.$ What is the percentage of incident power that is reflected? $10 \%$ $25 \%$ $50 \%$ $75 \%$
A uniform plane electromagnetic wave incident normally on a plane surface of a dielectric material is reflected with a VSWR of $3.$ What is the percentage of incident pow...
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2491
GATE ECE 2001 | Question: 12
Consider the following sequence of instructions for an $8085$ ... ports $\text{(PORT1, PORT2}$ and $\text{PORT3)}$ will be loaded with data, and what is the bit pattern of the data?
Consider the following sequence of instructions for an $8085$ microprocessor based system.$\begin{array}{lll} \text{Memory Address} & \text{Instructions} \\ \text{FF00} &...
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2492
GATE ECE 1998 | Question 1.13
The $f_{\mathrm{T}}$ of a $\text{BJT}$ is related to its $g m, \mathrm{C}_\pi$ and $\mathrm{C}_\mu$ as follows $f_{\mathrm{T}}=\frac{\mathrm{C}_\pi+\mathrm{C}_{\mu}}{g_\text{m}}$ ... $f_{\mathrm{T}}=\frac{g_\text{m}}{2 \pi\left(\mathrm{C}_\pi+\mathrm{C}_{\mu}\right)}$
The $f_{\mathrm{T}}$ of a $\text{BJT}$ is related to its $g m, \mathrm{C}_\pi$ and $\mathrm{C}_\mu$ as follows$f_{\mathrm{T}}=\frac{\mathrm{C}_\pi+\mathrm{C}_{\mu}}{g_\te...
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2493
GATE ECE 1998 | Question 1.37
In a series regulated power supply circuit, the voitage gain $A_{v}$ of the 'pass' transistor satisfies the condition $\mathrm{A}_{v} \rightarrow \infty$ $1<<\mathrm{A}_{v}<\infty$ $\mathrm{A}_{v} \approx 1$ $\mathrm{A}_{v}<<1$
In a series regulated power supply circuit, the voitage gain $A_{v}$ of the 'pass' transistor satisfies the condition$\mathrm{A}_{v} \rightarrow \infty$$1<<\mathrm{A}_{v}...
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2494
GATE ECE 1998 | Question 2.34
The polarisation of wave with electric field vector $\overrightarrow{\mathrm{E}}=\mathrm{E}_{0} \; e^{j(\hat{\rho}(\omega t+\beta z)}\left(\vec{a}_{x}+\vec{a}_{y}\right)$ is linear elliptical left hand circular right hand circular
The polarisation of wave with electric field vector$\overrightarrow{\mathrm{E}}=\mathrm{E}_{0} \; e^{j(\hat{\rho}(\omega t+\beta z)}\left(\vec{a}_{x}+\vec{a}_{y}\right)$ ...
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2495
GATE ECE 1995 | Question 1.17
The probability that an electron in a metal occupies the Fermi-level at any temperature $(>0 \mathrm{~K})$ $0$ $1$ $0.5$ $1.0$
The probability that an electron in a metal occupies the Fermi-level at any temperature $(>0 \mathrm{~K})$$0$$1$$0.5$$1.0$
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2496
GATE ECE 1995 | Question 1.23
A $\text{BJT}$ is said to be operating in the saturation region if both the junctions are reverse biased base-emitter junction is reverse biased and base-collector junction is forward biased base-emitter junction is forward biased and base-collector junction reverse-biased both the junctions are forward biased
A $\text{BJT}$ is said to be operating in the saturation region ifboth the junctions are reverse biasedbase-emitter junction is reverse biased and base-collector junction...
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2497
GATE ECE 1995 | Question 1.24
The depletion capacitance, $\mathrm{C}_{\mathrm{J}}$, of an abrupt $\mathrm{P}-\mathrm{N}$ junction with constant doping on either side varies with reverse bias, $V_{R^{\prime}}$ as $C_{\mathrm{J}} \propto V_{\mathrm{R}}$ ... $\mathrm{C}_{\mathrm{J}} \alpha \mathrm{V}_{\mathrm{R}}^{-1 / 3}$
The depletion capacitance, $\mathrm{C}_{\mathrm{J}}$, of an abrupt $\mathrm{P}-\mathrm{N}$ junction with constant doping on either side varies with reverse bias, $V_{R^{\...
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2498
GATE ECE 1995 | Question 1.33
An $\text{R-S}$ latch is a combinatorial circuit synchronous sequential circuit one bit memory element one clock delay element
An $\text{R-S}$ latch is acombinatorial circuitsynchronous sequential circuitone bit memory elementone clock delay element
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2500
GATE ECE 1994 | Question: 4.6
Type of $\mathrm{ADC}$ (A) Successive approximation (1) $1$ (B) Dual-slope (2) $8$ (C) Parallel Comparator (3) $16$ (4) $256$ (5) $512$ Maximum conversion for $8$-bit $\text{ADC}$ in clock cycles.
Type of $\mathrm{ADC}$(A) Successive approximation(1) $1$(B) Dual-slope(2) $8$(C) Parallel Comparator(3) $16$ (4) $256$ (5) $512$ Maximum conversion for $8$-bit $\text{AD...
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2501
GATE ECE 1993 | Question 4.3
If the secondary winding of the ideal transformer shown in the circuit of Fig. $4.3.$ has $40$ turns, the number of turns in the primary winding for maximum power transfer to the $2^{\circ}$ resistor will be $20$ $40$ $80$ $160$
If the secondary winding of the ideal transformer shown in the circuit of Fig. $4.3.$ has $40$ turns, the number of turns in the primary winding for maximum power transfe...
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2503
GATE ECE 2010 | Question: 9
The amplifier circuit shown below uses a silicon transistor. The capacitors $\mathrm{C}_{\mathrm{C}}$ and $\mathrm{C}_{\mathrm{E}}$ can be assumed to be short at signal frequency and the effect of output resistance $r_\text{o}$ ... $\text{R}_\text{i}$ and the magnitude of voltage gain $\text{A}_\text{v}$ increase
The amplifier circuit shown below uses a silicon transistor. The capacitors $\mathrm{C}_{\mathrm{C}}$ and $\mathrm{C}_{\mathrm{E}}$ can be assumed to be short at signal f...
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2505
GATE ECE 1991 | Question 10
(a) A signal $A \sin \omega_m \mathrm{t}$ is input to a square - law device $\left(e_0-e_{m 2}\right)$. The output of which is given to an $\mathrm{FM}$ ... is the carrier frequency. Determine the value of gain $\mathrm{K}$ so that the output is a suppressed carrier $\text{DSB}$ signal.
(a) A signal $A \sin \omega_m \mathrm{t}$ is input to a square - law device $\left(e_0-e_{m 2}\right)$. The output of which is given to an $\mathrm{FM}$ modulator as the ...
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2506
GATE ECE 2011 | Question: 50
The input-output transfer function of a plant $H(s)=\frac{100}{s(s+10)^2}$. The plant is placed in a unity negative feedback configuration as shown in the figure below. The signal flow graph that DOES NOT model the plant $\operatorname{transfer~function~} H(s)$ is
The input-output transfer function of a plant $H(s)=\frac{100}{s(s+10)^2}$. The plant is placed in a unity negative feedback configuration as shown in the figure below.Th...
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2510
GATE ECE 2001 | Question: 2.2
In the figure, the value of the load resistor $R$ which maximizes the power delivered to it is $14.14 \; \Omega$ $10 \; \Omega$ $200 \; \Omega$ $28.28 \; \Omega$
In the figure, the value of the load resistor $R$ which maximizes the power delivered to it is$14.14 \; \Omega$$10 \; \Omega$$200 \; \Omega$$28.28 \; \Omega$
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2511
GATE ECE 1998 | Question 2.17
The image channel selectivity of superheterodyne receiver depends upon $\text{IF}$ amplifiers only $\text{RF}$ and $\text{IF}$ amplifiers only Preselector, $\text{RF}$ and $\text{IF}$ amplifiers Preselector, and $\text{RF}$ amplifiers only
The image channel selectivity of superheterodyne receiver depends upon$\text{IF}$ amplifiers only$\text{RF}$ and $\text{IF}$ amplifiers onlyPreselector, $\text{RF}$ and $...
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2512
GATE ECE 2003 | Question: 61
Let $X$ and $Y$ be two statistically independent random variables uniformly distributed in the ranges $(-1,1)$ and $(-2,1)$ respectively. Let $Z=X+Y$. Then the probability that $(Z \leq-2)$ is zero $\frac{1}{6}$ $\frac{1}{3}$ $\frac{1}{12}$
Let $X$ and $Y$ be two statistically independent random variables uniformly distributed in the ranges $(-1,1)$ and $(-2,1)$ respectively. Let $Z=X+Y$. Then the probabilit...
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2513
GATE ECE 2004 | Question: 90
A lossless transmission line is terminated in a load which reflects a part of the incident power. The measured VSWR is $2.$ The percentage of the power that is reflected back is $57.73$ $33.33$ $0.11$ $11.11$
A lossless transmission line is terminated in a load which reflects a part of the incident power. The measured VSWR is $2.$ The percentage of the power that is reflected ...
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2515
GATE ECE 2005 | Question: 81a
Statement for Linked Answer Questions 81 a and 81 b: Consider an $8085$ microprocessor system The following program starts at location $0100 \mathrm{H}$ ... the program counter reaches $0109 \mathrm{H}$ is $20 \mathrm{H}$ $02 \mathrm{H}$ $00 \mathrm{H}$ $\mathrm{FFH}$
Statement for Linked Answer Questions 81 a and 81 b:Consider an $8085$ microprocessor systemThe following program starts at location $0100 \mathrm{H}$.$\begin{array}{l} \...
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2516
GATE ECE 1995 | Question 1.22
A zener diode works on the principle of tunneling of charge carriers across the junction thermionic emission diffusion of charge carriers across the junction hopping of charge carriers across the junction
A zener diode works on the principle oftunneling of charge carriers across the junctionthermionic emissiondiffusion of charge carriers across the junctionhopping of charg...
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2517
GATE ECE 1995 | Question 1.45
The intrinsic impedance of a lossy dielectric medium is given by $\frac{j \omega \mu}{\sigma}$ $\frac{j \omega \varepsilon}{\mu}$ $\sqrt{\frac{j \omega \mu}{\sigma+j \omega \varepsilon}}$ $\sqrt{\frac{\mu}{\varepsilon}}$
The intrinsic impedance of a lossy dielectric medium is given by$\frac{j \omega \mu}{\sigma}$$\frac{j \omega \varepsilon}{\mu}$$\sqrt{\frac{j \omega \mu}{\sigma+j \omega ...
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2519
GATE ECE 1994 | Question 3.8
Pulse-width modulated signals are immune to noise since their amplitude is constant.
Pulse-width modulated signals are immune to noise since their amplitude is constant.
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2520
GATE ECE 2009 | Question: 22
The Taylor series expansion of $\dfrac{\sin x}{x-\pi}$ at $x=\pi$ is given by $1+\frac{(x-\pi)^{2}}{3 !}+\ldots$ $-1-\frac{(x-\pi)^{2}}{3 !}+\ldots$ $1-\frac{(x-\pi)^{2}}{3 !}+\ldots$ $-1+\frac{(x-\pi)^{2}}{3 !}+\ldots$
The Taylor series expansion of $\dfrac{\sin x}{x-\pi}$ at $x=\pi$ is given by$1+\frac{(x-\pi)^{2}}{3 !}+\ldots$$-1-\frac{(x-\pi)^{2}}{3 !}+\ldots$$1-\frac{(x-\pi)^{2}}{3 ...
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