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Consider a long-channel MOSFET with a channel length $1\:\mu m$ and width $10\: \mu m.$ The device parameters are acceptor concentration $N_{A}=5 \times 10^{16}\: cm^{-3},$ electron mobility $\mu_{n}=800\: cm^{2}/V-s,$ oxide capacitance/area $C_{ox}=3.45 \times 10^{-7}\:F/cm^{2},$ threshold voltage $V_{T}=0.7\:V.$ The drain saturation current $(I_{Dsat})$ for a gate voltage of $5\:V$ is _______ $mA$

(rounded off to two decimal places.). $[\varepsilon_{0}=8.854 \times 10^{-14}F/cm, \varepsilon_{si} =11.9]$