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Recent questions tagged electronic-devices

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GATE ECE 2026 | Question: 4
Consider carrier transport in a Zener diode in the breakdown region.Which is the dominant transport mechanism for current flow in this case?DriftDiffusionTunnelingBallist...
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GATE ECE 2026 | Question: 15
Consider a $\text{p-n}$ junction diode when it is forward biased with $2$ V.Which of the following is/are the correct magnitude(s) of the energy difference between quasi ...
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GATE ECE 2026 | Question: 19
Figure shows the output characteristics of two different Bipolar JunctionTransistors (BJT), BJT $1$ with magnitude of Early voltage $\left|V_{A 1}\right|$, and BJT $2$ wi...
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GATE ECE 2026 | Question: 44
Consider an LED based on a direct bandgap semiconductor material with energy bandgap $1.3$ eV.Given: Plank's constant, $h=6.63 \times 10^{-34} \mathrm{~J} \mathrm{~s}$ an...
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GATE ECE 2026 | Question: 50
An $n$-channel MOSFET is connected as shown in the Figure.Assume $V_{T H}=1 \mathrm{~V}, V_{D D}=5 \mathrm{~V}$, and $\mu C_{o x}\left(\frac{W}{L}\right)=2 \mathrm{~mA} \...
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GATE ECE 2026 | Question: 54
Consider that the concentration of electrons in a semiconductor bar varies linearly from $2 \times 10^{17} \mathrm{~cm}^{-3}$ at $x=1 \mu \mathrm{~m}$ to $1 \times 10^{16...
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GATE ECE 2025 | Question: 21
Which of the following can be used as an n-type dopant for silicon?Select the correct option(s).ArsenicBoronGalliumPhosphorous
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GATE ECE 2025 | Question: 53
An ideal p-n junction germanium diode has a reverse saturation current of $10 \mu \mathrm{~A}$ at $300 \: \mathrm{ K}$.The voltage (in Volts, rounded off to two decimal p...
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GATE ECE 1997 | Question 2.4
In a common emitter $\text{BJT}$ amplifier, the maximum usable supply voltage is limited byAvalanche breakdown of Base-Emitter junctionCollector-Base breakdown voltage wi...
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GATE ECE 1997 | Question 4.6
The intrinsic carrier density at $300 \mathrm{~K}$ is $1.5 \times 10^{10}$ / $\mathrm{cm}^{3}$, in silicon. For $n$-type silicon doped to $2.25 \times$ $10^{15}$ atoms $/...
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GATE ECE 2000 | Question 1.7
The current gain of a bipolar transistor drops at high frequencies because oftransistor capacitanceshigh current effects in the baseparasitic inductive elementsthe Early ...
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GATE ECE 2000 | Question 2.5
In the circuit of the figure, assume that the transistor is in active region. It has a large $\beta$ and its base-emitter voltage is $0.7 \mathrm{~V}$. The value of $\mat...
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GATE ECE 1999 | Question 1.5
The early effect in a bipolar junction transistor is caused byfast turn-onfast turn-offlarge collector-base reverse biaslarge emitter-base forward bias
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GATE ECE 1999 | Question 1.11
A Darlington emitter - follower circuit is sometimes used in the output stage of a $\text{TTL}$ gate in order toincrease its $\mathrm{I}_{\mathrm{OL}}$reduce its $\mathrm...
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GATE ECE 1999 | Question 2.5
An $n$-channel $\text{JEFT}$ has $\mathrm{I}_{\mathrm{DSS}}=2 \mathrm{~mA}$ and $\mathrm{V}_{p}=-4 \mathrm{~V}$. Its transconductance $\mathrm{gm}$ (in milliohm) for an a...
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GATE ECE 1999 | Question 2.6
An $\text{npn}$ transistor (with $\mathrm{C}=0.3 \; \mathrm{pF}$ ) has a unity gain cutoff frequency $f_{\mathrm{T}}$ of $400 \; \mathrm{MHz}$ at a $\text{dc}$ bias curre...
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GATE ECE 2001 | Question: 1.6
The current gain of a BJT is$g_{m} r_{\circ}$$\frac{g_{m}}{r_{\circ}}$$g_{m} r_{\pi}$$\frac{g_{m}}{r_{\pi}}$
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GATE ECE 2001 | Question: 1.7
MOSFET can be used as acurrent controlled capacitorvoltage controlled capacitorcurrent controlled inductorvoltage controlled inductor
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GATE ECE 2001 | Question: 1.8
The effective channel length of a MOSFET in saturation decreases with increase ingate voltagedrain voltagesource voltagebody voltage
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GATE ECE 2001 | Question: 1.9
The ideal $\text{OP-AMP}$ has the following characteristics.$\mathrm{R}_{\mathrm{i}}=\infty, \mathrm{A}=\infty, \mathrm{R}_{0}=0$$\mathrm{R}_{\mathrm{i}}=0, \mathrm{~A}=\...
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GATE ECE 2001 | Question: 2.5
An npn $\text{BJT}$ has $\mathrm{gm}=38 \mathrm{~m} \mathrm{~A} / \mathrm{V}, \mathrm{C}_{u}=10^{-14} \mathrm{~F}$, $C_{\pi}=4 \times 10^{-13} \mathrm{~F}$, and $D C$ cur...
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GATE ECE 2001 | Question: 2.6
The transistor shunt regulator shown in the figure is has a regulated output voltage of $10 \mathrm{~V}$, when the input varies from $20 \mathrm{~V}$ to $30 \mathrm{~V}$....
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GATE ECE 2001 | Question: 2.13
In the $\text{DRAM}$ cell in the figure is the $V_{t}$ of the $\text{NMOSFET}$ is $1 \mathrm{~V}$. For the following three combinations of $\mathrm{WL}$ and $\mathrm{BL}$...
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GATE ECE 2001 | Question: 8
Assume that the OP-AMP in the figure, ideal Obtain an expression for $v_{0}$ in terms of $v_{s}, \mathrm{R}$, and the reverse saturation current $I_{s}$ of the transistor...
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GATE ECE 2002 | Question: 1.5
In given figure a silicon diode is carrying a constant current of $1 \mathrm{~mA}$. When the temperature of the diode is $20^{\circ} \mathrm{C}, \mathrm{V}_{\mathrm{D}}$ ...
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GATE ECE 1998 | Question 1.14
The static characteristic of an adequately forward biased $p-n$ junction is a straight line, if the plot is of$\log I $ vs. $\log V$$\log I$ vs. $V$$I$ vs. $\log V$$I$ vs...
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GATE ECE 1998 | Question 1.27
Two identical $\text{FETs}$, each characterised by the parameters $g_m$ and $r_d$ are connected in parallel. The composite $\text{FET}$ is then characterised by the param...
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GATE ECE 1998 | Question 1.29
In a differential amplifier, $\text{CMRR}$ can be improved by using an increasedemitter resistancecollector resistancepower supply voltagessource resistance
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GATE ECE 1998 | Question 1.37
In a series regulated power supply circuit, the voitage gain $A_{v}$ of the 'pass' transistor satisfies the condition$\mathrm{A}_{v} \rightarrow \infty$$1<<\mathrm{A}_{v}...
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GATE ECE 1998 | Question 1.38
For full wave rectification, a four diode bridge rectifier is claimed to have the following advantages over a two diode circuit :(1) less expensive transformer,(2) smalle...
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