Recent questions and answers in Electronic Devices - GO Electronics

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1

GATE2017 EC-2: 53
An electron $(q_1)$ is moving in free space with velocity $10^5$ m/s towards a stationary electron $(q_2)$ far away. The closest distance that this moving electron gets to the stationary electron before the repulsive force diverts its path is ____________$\times 10^{-8}$ m. [ ... electron $e=-1.6\times 10^{-19}$ C, and permittivity $\varepsilon _0=(1/36\pi)\times 10^{-9}$ F/m]

asked Nov 25, 2017 in Electronic Devices by admin (2.7k points)

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2

GATE2017 EC-2: 36
A MOS capacitor is fabricated on p-type Si (Silicon) where the metal work function is 4.1 eV and electron affinity of Si is 4.0 eV. $E_C-E_F=0.9$ eV, where $E_C$ and $E_F$ are the conduction band minimum and the Fermi energy levels of Si, ... of this capacitor is -1 V, then the magnitude of the fixed charge at the oxide-semiconductor interface, in $nC/cm^2$, is ___________.

asked Nov 25, 2017 in Electronic Devices by admin (2.7k points)

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3

GATE2017 EC-2: 39
An abrupt pn junction (located at x=0t ) is uniformly doped on both p and n sides. The width of the depletion region is W and the electric field variation in thr x-directionis $E(x)$. Which of the following figures represents the electric field profile near the pn junction?

asked Nov 25, 2017 in Electronic Devices by admin (2.7k points)

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4

GATE2017 EC-2: 13
In the figure, $D1$ is a real silicon $pn$ junction diode with a drop of $0.7V$ under forward bias condition and $D2$ is a zener diode breakdown voltage of$-6.8V$.The input $V_{in}(t)$ is a periodic square wave of period $T$, whose one period is shown in the figure.

asked Nov 23, 2017 in Electronic Devices by admin (2.7k points)

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5

GATE2017 EC-2: 11
Consider an $n$-channel MOSFET having width $W$, length $L$, electron mobility in the channel $\mu _{n}$ and oxide capacitance per unit area $C_{ox}$. If gate-to-source $V_{GS}$=0.7V, drain-to-source voltage $V_{DS}=0.1 V$, $\mu _{n}C_{ox}=100 \mu A/V^{2}$, threshold voltage $V_{TH}=0.3V$ and $(W/L)=50$, then the transconductance $g_{m}$ (in mA/V) is __________.

asked Nov 23, 2017 in Electronic Devices by admin (2.7k points)

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6

GATE2017 EC-2: 10
An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then the effective base width increases and common-emitter current gain increases the effective ... width decreases and common-emitter current gain increases the effective base width decreases and common-emitter current gain decreases

asked Nov 23, 2017 in Electronic Devices by admin (2.7k points)

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7

GATE2017 EC-2: 9
An n-channel enhancement mode MOSFET is biased at $V_{GS}$ >$V_{TH}$ and $V_{DS}$ > $(V_{GS}-V_{TH})$, where $V_{GS}$ is the gate-to-source voltage, $V_{DS}$ is the drain-to-source voltage and ... a voltage source with zero output impedance voltage source with non-zero output impedance current source with finite output impedance current source with infinite output impedance

asked Nov 23, 2017 in Electronic Devices by admin (2.7k points)

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8

GATE2017 EC-1: 38
As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentrations of N_{D2}=10^{16}cm^{-3} in the n-regions of the diodes, and uniform acceptor doping concentrations of N_{A1}=10^{14} cm{-3} and N_{A2 ... C_{2}/C_{1} of their reverse bias capacitance for the same applied reverse bias, is _________.

asked Nov 17, 2017 in Electronic Devices by admin (2.7k points)

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9

GATE2017 EC-1: 37
As shown , a uniformly doped Silicon bar of length $L=0.1\mu m$ with a donor concentration $N_{D}=10^{16}cm^{-3}$ is illuminated at $x=0$ such that electron and hole pairs are generated at the rate of $G_{L}=G_{LO}(1-\frac{x}{L}),0\leq x\leq L$, ... concentration that goes to $0$ at $x=L$, the magnitude of the diffusion current density at $x=L/2$, in $A/cm^{2}$, is ___________.

asked Nov 17, 2017 in Electronic Devices by admin (2.7k points)

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10

GATE2017 EC-1: 36
The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of $n=1 \times 10^{16} cm^{3}$ and electronic charge $q=1.6 \times 10 ^{-19}C$. If a bias of $5 V$ is applied across a $1 µm$ region of this semiconductor, the resulting current density in this region, in $kA/cm^{2} $, is _____.

asked Nov 17, 2017 in Electronic Devices by admin (2.7k points)

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11

GATE2017 EC-1: 8
An $n+-n$ Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of $N_{D1}=1\times 10^{18}cm^{-3}$ and $N_{D2}=1\times 10^{15}cm^{-3}$ corresponding to the $n+$ and $n$ regions respectively. At the operational temperature $T$, assume ... $V$ 0.460 $V$ 0.288 $V$ 0.173 $V$

asked Nov 17, 2017 in Electronic Devices by admin (2.7k points)

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12

GATE2017 EC-1: 7
A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statements is true? Silicon atoms acts as p-type dopants in Arsenic sites and n-type dopants ... p-type dopants in Arsenic as well as Gallium sites Silicon atoms acts as n-type dopants in Arsenic as well as Gallium sites

asked Nov 17, 2017 in Electronic Devices by admin (2.7k points)

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