Recent questions and answers in Electronic Devices - GO Electronics

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1

GATE2017 EC-2: 53
An electron $(q_1)$ is moving in free space with velocity $10^5$ m/s towards a stationary electron $(q_2)$ far away. The closest distance that this moving electron gets to the stationary electron before the repulsive force diverts its path is ____________$\times 10^{-8}$ m. [ ... electron $e=-1.6\times 10^{-19}$ C, and permittivity $\varepsilon _0=(1/36\pi)\times 10^{-9}$ F/m]

asked Nov 25, 2017 in Electronic Devices by admin (2.8k points)

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2

GATE2017 EC-2: 36
A MOS capacitor is fabricated on $p$-type Si (Silicon) where the metal work function is $4.1$ eV and electron affinity of Si is $4.0$ eV. $E_C-E_F=0.9$ eV, where $E_C$ and $E_F$ are the conduction band minimum and the Fermi energy levels of Si ... of this capacitor is $-1$ V, then the magnitude of the fixed charge at the oxide-semiconductor interface, in $nC/cm^2$, is ___________.

asked Nov 25, 2017 in Electronic Devices by admin (2.8k points)

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3

GATE2017 EC-2: 39
An abrupt $pn$ junction (located at $x=0$) is uniformly doped on both $p$ and $n$ sides. The width of the depletion region is $W$ and the electric field variation in the $x$-direction is $E(x)$. Which of the following figures represents the electric field profile near the $pn$ junction?

asked Nov 25, 2017 in Electronic Devices by admin (2.8k points)

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4

GATE2017 EC-2: 13
In the figure, $D1$ is a real silicon $pn$ junction diode with a drop of $0.7V$ under forward bias condition and $D2$ is a Zener diode breakdown voltage of $-6.8V$. The input $V_{in}(t)$ is a periodic square wave of period $T$ ... $-20.5 V$ $6.1 V$ and $-21.9 V$ $7.5 V$ and $-21.2 V$ $6.1 V$ and $-22.6 V$

asked Nov 23, 2017 in Electronic Devices by admin (2.8k points)

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5

GATE2017 EC-2: 9
An n-channel enhancement mode MOSFET is biased at $V_{GS}$ >$V_{TH}$ and $V_{DS}$ > $(V_{GS}-V_{TH})$, where $V_{GS}$ is the gate-to-source voltage, $V_{DS}$ is the drain-to-source voltage and ... a voltage source with zero output impedance voltage source with non-zero output impedance current source with finite output impedance current source with infinite output impedance

asked Nov 23, 2017 in Electronic Devices by admin (2.8k points)

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6

GATE2017 EC-2: 10
An $npn$ bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then the effective base width increases and common-emitter current gain increases the ... base width decreases and common-emitter current gain increases the effective base width decreases and common-emitter current gain decreases

asked Nov 23, 2017 in Electronic Devices by admin (2.8k points)

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7

GATE2017 EC-2: 11
Consider an $n$-channel MOSFET having width $W$, length $L$, electron mobility in the channel $\mu _{n}$ and oxide capacitance per unit area $C_{ox}$. If gate-to-source $V_{GS}=0.7$ V, drain-to-source voltage $V_{DS}=0.1 V$, $\mu _{n}C_{ox}=100 \mu A/V^{2}$, threshold voltage $V_{TH}=0.3V$ and $(W/L)=50$, then the transconductance $g_{m}$ (in mA/V) is __________.

asked Nov 23, 2017 in Electronic Devices by admin (2.8k points)

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8

GATE2017 EC-1: 36
The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of $n=1 \times 10^{16} cm^{3}$ and electronic charge $q=1.6 \times 10 ^{-19}C$. If a bias of $5 V$ is applied across a $1 µm$ region of this semiconductor, the resulting current density in this region, in $kA/cm^{2} $, is _____.

asked Nov 17, 2017 in Electronic Devices by admin (2.8k points)

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9

GATE2017 EC-1: 37
As shown , a uniformly doped Silicon bar of length $L=0.1\mu m$ with a donor concentration $N_{D}=10^{16}cm^{-3}$ is illuminated at $x=0$ such that electron and hole pairs are generated at the rate of $G_{L}=G_{L0}(1-\frac{x}{L}), 0\leq x\leq L$ ... concentration that goes to $0$ at $x=L$, the magnitude of the diffusion current density at $x=L/2$, in $A/cm^{2}$, is ___________.

asked Nov 17, 2017 in Electronic Devices by admin (2.8k points)

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10

GATE2017 EC-1: 38
As shown, two Silicon (Si) abrupt $p-n$ junction diodes are fabricated with uniform donor doping concentrations of $ N_{D1}=10^{14} cm^{-3} $ and $N_{D2}=10^{16}cm^{-3}$ in the $n$-regions of the diodes, and uniform acceptor doping ... -in potentials of the diodes, the ratio $C_{2}/C_{1}$ of their reverse bias capacitance for the same applied reverse bias, is _________.

asked Nov 17, 2017 in Electronic Devices by admin (2.8k points)

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11

GATE2017 EC-1: 10
An $n^+-n$ Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of $N_{D1}=1\times 10^{18}cm^{-3}$ and $N_{D2}=1\times 10^{15}cm^{-3}$ corresponding to the $n^+$ and $n$ regions respectively. At the operational temperature $T$, assume complete ... of the build-in potential of this device? $0.748 \: V$ $0.460 \: V$ $0.288 \: V$ $0.173 \: V$

asked Nov 17, 2017 in Electronic Devices by admin (2.8k points)

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12

GATE2017 EC-1: 7
In the circuit shown, the positive angular frequency $\omega$ (in radians per second) at which the magnitude of the phase difference between the voltages $V_1$ and $V_2$ equals $\frac{\pi}{4}$ radians, is _________

asked Nov 17, 2017 in Electronic Devices by admin (2.8k points)

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