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Recent questions and answers in Electronic Devices
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1
GATE2017 EC2: 53
An electron $(q_1)$ is moving in free space with velocity $10^5$ m/s towards a stationary electron $(q_2)$ far away. The closest distance that this moving electron gets to the stationary electron before the repulsive force diverts its path is ____________$\times 10^{8}$ m. [ ... electron $e=1.6\times 10^{19}$ C, and permittivity $\varepsilon _0=(1/36\pi)\times 10^{9}$ F/m]
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Nov 25, 2017
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Electronic Devices
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gate2017ec2
driftvelocity
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2
GATE2017 EC2: 36
A MOS capacitor is fabricated on ptype Si (Silicon) where the metal work function is 4.1 eV and electron affinity of Si is 4.0 eV. $E_CE_F=0.9$ eV, where $E_C$ and $E_F$ are the conduction band minimum and the Fermi energy levels of Si, ... of this capacitor is 1 V, then the magnitude of the fixed charge at the oxidesemiconductor interface, in $nC/cm^2$, is ___________.
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Nov 25, 2017
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Electronic Devices
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gate2017ec2
moscapacitor
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3
GATE2017 EC2: 39
An abrupt pn junction (located at x=0t ) is uniformly doped on both p and n sides. The width of the depletion region is W and the electric field variation in thr xdirectionis $E(x)$. Which of the following figures represents the electric field profile near the pn junction?
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Nov 25, 2017
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Electronic Devices
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gate2017ec2
pnjunction
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4
GATE2017 EC2: 13
In the figure, $D1$ is a real silicon $pn$ junction diode with a drop of $0.7V$ under forward bias condition and $D2$ is a zener diode breakdown voltage of$6.8V$.The input $V_{in}(t)$ is a periodic square wave of period $T$, whose one period is shown in the figure.
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Nov 23, 2017
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Electronic Devices
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gate2017ec2
0
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5
GATE2017 EC2: 11
Consider an $n$channel MOSFET having width $W$, length $L$, electron mobility in the channel $\mu _{n}$ and oxide capacitance per unit area $C_{ox}$. If gatetosource $V_{GS}$=0.7V, draintosource voltage $V_{DS}=0.1 V$, $\mu _{n}C_{ox}=100 \mu A/V^{2}$, threshold voltage $V_{TH}=0.3V$ and $(W/L)=50$, then the transconductance $g_{m}$ (in mA/V) is __________.
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Nov 23, 2017
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Electronic Devices
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gate2017ec2
mosfet
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6
GATE2017 EC2: 10
An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the basecollector junction is increased, then the effective base width increases and commonemitter current gain increases the effective ... width decreases and commonemitter current gain increases the effective base width decreases and commonemitter current gain decreases
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Nov 23, 2017
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Electronic Devices
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gate2017ec2
bjt
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7
GATE2017 EC2: 9
An nchannel enhancement mode MOSFET is biased at $V_{GS}$ >$V_{TH}$ and $V_{DS}$ > $(V_{GS}V_{TH})$, where $V_{GS}$ is the gatetosource voltage, $V_{DS}$ is the draintosource voltage and ... a voltage source with zero output impedance voltage source with nonzero output impedance current source with finite output impedance current source with infinite output impedance
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Nov 23, 2017
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Electronic Devices
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gate2017ec2
mosfet
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8
GATE2017 EC1: 38
As shown, two Silicon (Si) abrupt pn junction diodes are fabricated with uniform donor doping concentrations of N_{D2}=10^{16}cm^{3} in the nregions of the diodes, and uniform acceptor doping concentrations of N_{A1}=10^{14} cm{3} and N_{A2 ... C_{2}/C_{1} of their reverse bias capacitance for the same applied reverse bias, is _________.
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Nov 17, 2017
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Electronic Devices
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gate2017ec1
+1
vote
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9
GATE2017 EC1: 37
As shown , a uniformly doped Silicon bar of length $L=0.1\mu m$ with a donor concentration $N_{D}=10^{16}cm^{3}$ is illuminated at $x=0$ such that electron and hole pairs are generated at the rate of $G_{L}=G_{LO}(1\frac{x}{L}),0\leq x\leq L$, ... concentration that goes to $0$ at $x=L$, the magnitude of the diffusion current density at $x=L/2$, in $A/cm^{2}$, is ___________.
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Nov 17, 2017
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Electronic Devices
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gate2017ec1
0
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10
GATE2017 EC1: 36
The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of $n=1 \times 10^{16} cm^{3}$ and electronic charge $q=1.6 \times 10 ^{19}C$. If a bias of $5 V$ is applied across a $1 µm$ region of this semiconductor, the resulting current density in this region, in $kA/cm^{2} $, is _____.
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Nov 17, 2017
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Electronic Devices
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gate2017ec1
driftcurrent
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11
GATE2017 EC1: 8
An $n+n$ Silicon device is fabricated with uniform and nondegenerate donor doping concentrations of $N_{D1}=1\times 10^{18}cm^{3}$ and $N_{D2}=1\times 10^{15}cm^{3}$ corresponding to the $n+$ and $n$ regions respectively. At the operational temperature $T$, assume ... $V$ 0.460 $V$ 0.288 $V$ 0.173 $V$
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Nov 17, 2017
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Electronic Devices
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admin
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gate2017ec1
solodstatedevices
carriertransport
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12
GATE2017 EC1: 7
A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statements is true? Silicon atoms acts as ptype dopants in Arsenic sites and ntype dopants ... ptype dopants in Arsenic as well as Gallium sites Silicon atoms acts as ntype dopants in Arsenic as well as Gallium sites
asked
Nov 17, 2017
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Electronic Devices
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gate2017ec1
extrinsic
doping
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