Recent questions tagged mosfet

An $n$-channel MOSFET is connected as shown in the Figure.Assume $V_{T H}=1 \mathrm{~V}, V_{D D}=5 \mathrm{~V}$, and $\mu C_{o x}\left(\frac{W}{L}\right)=2 \mathrm{~mA} \...

Which of the following statements is/are TRUE with respect to ideal MOSFET-based DC-coupled single-stage amplifiers having finite load resistors?The common-gate amplifier...

The identical MOSFETs $M_{1}$ and $M_{2}$ in the circuit given below are ideal and biased in the saturation region. $\mathrm{M}_{1}$ and $\mathrm{M}_{2}$ have a transcond...

The gate delay of an $\text{NMOS}$ inverter is dominated by charge time rather than discharge time becausethe driver transistor has larger threshold voltage than the load...

For the $\text{CMOS}$ monostable multivibrator of given figure, $\mathrm{R}=50 \mathrm{~kW}, \mathrm{C}=0.01 \; \mu \mathrm{F}, \mathrm{V}_{\mathrm{DD}}=5 \mathrm{~V}$, a...

MOSFET can be used as acurrent controlled capacitorvoltage controlled capacitorcurrent controlled inductorvoltage controlled inductor

In the $\text{DRAM}$ cell in the figure is the $V_{t}$ of the $\text{NMOSFET}$ is $1 \mathrm{~V}$. For the following three combinations of $\mathrm{WL}$ and $\mathrm{BL}$...

Consider the following statements in connection with the CMOS inverter in the figure is where both the MOSFETs are of enhancement type and both have a thresh old voltage ...

In the $\text{MOSFET}$ amplifier of the figure is the signal outputs $V_{1}$ and $V_{2}$ obey the relationship$\mathrm{V}_{1}=\frac{\mathrm{V}_{2}}{2}$$\mathrm{V}_{1}=-\f...

The threshold voltage for each transistor in the figure is $2 \mathrm{V}$. For this circuit to work as an inverter, $V_{i}$ must take the values$-5 \mathrm{~V}$ and $0 \m...

For an $n$-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. $V_{SB}>0$ ), the threshold voltage $V_T$ of the ...

When the gate-to-source voltage $\left(\mathrm{V}_{\mathrm{GS}}\right)$ of a MOSFET with threshold voltage of $400 \; \mathrm{mV}$, working in saturation is $900 \; \math...

If $\mathrm{P}$ is Passivation, $\mathrm{Q}$ is $n$-well implant, $\mathrm{R}$ is metallization and $S$ is source/drain diffusion, then the order in which they are carrie...

The drain of an $n$-channel MOSFET is shorted to the gate so that $V_{G S}=V_{D s}$. The threshold voltage $\left(V_{T}\right)$ of MOSFET is $1 \mathrm{~V}$. If the drain...

For an $n$-channel $\text{MOSFET}$ and its transfer curve shown in the figure, the threshold voltage is$1 \mathrm{~V}$ and the device is in active region.$-1 \mathrm{~V}$...

Both transistors $\mathrm{T} 1$ and $\mathrm{T} 2$ show in the figure, have a threshold voltage of $1$ Volts. The device parameters $\mathrm{K}_1$ and $\mathrm{K}_2$ of $...

A $n$ – channel silicon $\left(E_{g}=1.1 \; \mathrm{eV}\right)$ MOSFET was fabricated using $n+$ poly-silicon gate and the threshold voltage was found to be $1 \mathrm{~V...

A silicon $n$ $\text{MOSFET}$ has a threshold voltage of $1$ $\mathrm{V}$ and oxide thickness of $\mathrm{AO}$.$\left[\varepsilon_{r}\left(\mathrm{siO}_{2}\right)=3.9, \v...

An $n$-channel depletion MOSFET has following two points on its $\mathrm{I}_\text{D}-\mathrm{V}_{\text {GS}}$ curve$\text{V}_{\text{Gs}}=0$ at $\text{I}_\text{D}=12 \math...

The threshold voltage of an $n$ channel $\text{MOSFET}$ can be increased byincreasing the channel dopant concentrationreducing the channel dopant concentrationreducing th...

Channel current is reduced on application of a more positive voltage to the gate of a depletion mode $n$-channel $\text{MOSFET}$.

In the CMOS inverter circuit shown, if the transconductance parameters of the NMOS and PMOS transistors are $k_{n}=k_{p}=\mu_{n} C_{o x} \dfrac{W_{n}}{L_{n}}=\mu_{p} C_{o...

The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a $\mathrm{Metal} / \mathrm{SiO}_{2} / \text{silicon (MOS)}$ capacitor having an area of ...

The drain current of a MOSFET in saturation is given by $I_{D}=K\left(V_{G S}-V_{T}\right)^{2}$ where $K$ is a constant. The magnitude of the transconductance $g_{m}$ is$...

For the circuit shown in the following figure, transistors $\text{M1}$ and $\text{M2}$ are identical $\text{NMOS}$ transistors. Assume that $\mathrm{M} 2$ is in saturatio...

The measured transconductance $g_{m}$ of an $\text{NMOS}$ transistor operating in the linear region is plotted against the gate voltage $V_{G}$ at a constant drain voltag...

Two identical $\text{NMOS}$ transistors $\text{M1}$ and $\text{M2}$ are connected as shown below. $\mathrm{V}_{\text {bias }}$ is chosen so that both transistors are in s...

Consider the following two statements about the internal conditions in an n-channel MOSFET operating in the active region.$\qquad \qquad \text{S1:}$ The inversion charge ...

Consider the CMOS circuit shown, where the gate voltage $V_{G}$ of the $\text{n-MOSFET}$ is increased from zero, while the gate voltage of the $\text{p-MOSFET}$ is kept c...