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Consider an $n$-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of $1.8$ V. Assume that $\frac{W}{L}=4$, $\mu_NC_{ox}= 70 \times 10^{-6} AV^{-2}$, the threshold voltage is $0.3$V, and the channel length modulation parameter is $0.09 \: V^{-1}$. In the saturation region, the drain conductance (in micro siemens) is  _________
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