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961
GATE ECE 1995 | Question 1.31
When a $\text{CPU}$ is interrupted, it stops execution of instructions acknowledges interrupt and branches of subroutine acknowledges interrupt and continues acknowledges interrupt and waits for the next instruction from the interrupting device
When a $\text{CPU}$ is interrupted, itstops execution of instructionsacknowledges interrupt and branches of subroutineacknowledges interrupt and continuesacknowledges int...
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962
GATE ECE 1995 | Question 1.32
The minimum number of $\text{MOS}$ transistors required to make a dynamic $\text{RAM}$ cell is $1$ $2$ $3$ $4$
The minimum number of $\text{MOS}$ transistors required to make a dynamic $\text{RAM}$ cell is$1$$2$$3$$4$
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963
GATE ECE 1995 | Question 1.33
An $\text{R-S}$ latch is a combinatorial circuit synchronous sequential circuit one bit memory element one clock delay element
An $\text{R-S}$ latch is acombinatorial circuitsynchronous sequential circuitone bit memory elementone clock delay element
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964
GATE ECE 1995 | Question 1.34
A $\text{‘DMA'}$ transfer implies direct transfer of data between memory and accumulator direct transfer of data between memory and I/O devices without the use of $\mu p$ transfer of data exclusively within $\mu P$ registers A fast transfer of data between $\mu P$ and $1 / O$ devices
A $\text{‘DMA'}$ transfer impliesdirect transfer of data between memory and accumulatordirect transfer of data between memory and I/O devices without the use of $\mu p$...
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965
GATE ECE 1995 | Question 1.35
An 'Assembler' for a microprocessor is used for assembly of processors in a production line creation of new programmes using different modules translation of a program from assembly language to machine language translation of a higher level language into English text
An 'Assembler' for a microprocessor is used forassembly of processors in a production linecreation of new programmes using different modulestranslation of a program from ...
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966
GATE ECE 1995 | Question 1.36
The image (second) channel selectivity of a super beterodync communication receiver is determined by antenna and preselector the preselector and $\text{RF}$ amplifier the preselector and $\text{IF}$ amplifier the $\text{RF}$ and $\text{IF}$ amplifier
The image (second) channel selectivity of a super beterodync communication receiver is determined byantenna and preselectorthe preselector and $\text{RF}$ amplifierthe pr...
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967
GATE ECE 1995 | Question 1.37
For a narrow band noise with Gaussian Gradrature components, the probability density function of its envelope will be uniform Gaussian exponential Rayleigh
For a narrow band noise with Gaussian Gradrature components, the probability density function of its envelope will beuniformGaussianexponentialRayleigh
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968
GATE ECE 1995 | Question 1.38
If the number of bits per sample in a $\text{PCM}$ system is increased from improvement in signal-to quantisation noise ratio will be $3 \mathrm{~d B}$ $6 \mathrm{~d B}$ $2 n \mathrm{~d B}$ $0 \mathrm{~d B}$
If the number of bits per sample in a $\text{PCM}$ system is increased from improvement in signal-to quantisation noise ratio will be$3 \mathrm{~d B}$$6 \mathrm{~d B}$$2...
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969
GATE ECE 1995 | Question 1.39
A $\text{PLL}$ can be used to demodulate $\text{PAM}$ signals $\text{PCM}$ signals $\text{FM}$ signals $\text{DSB-SC}$ signals
A $\text{PLL}$ can be used to demodulate$\text{PAM}$ signals$\text{PCM}$ signals$\text{FM}$ signals$\text{DSB-SC}$ signals
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970
GATE ECE 1995 | Question 1.40
A $\text{PAM}$ signal can be detected by using an $\text{ADC}$ an integrator a band pass filter a high pass filter
A $\text{PAM}$ signal can be detected by usingan $\text{ADC}$an integratora band pass filtera high pass filter
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971
GATE ECE 1995 | Question 1.41
A $1.0 \; \mathrm{kHz}$ signal is flat-top sampled at the rate of $1800$ samples sec and the samples are applied to an ideal rectangular $\text{LPF}$ with cat-off frequency of $1100 \mathrm{~Hz}$ ... $800 \mathrm{~Hz}$ and $1000 \mathrm{~Hz}$ components $800 \mathrm{~Hz}, 900$ and $1000 \mathrm{~Hz}$ components
A $1.0 \; \mathrm{kHz}$ signal is flat-top sampled at the rate of $1800$ samples sec and the samples are applied to an ideal rectangular $\text{LPF}$ with cat-off frequen...
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972
GATE ECE 1995 | Question 1.42
The signal to quantisation noise ratio in an $n$-bit $\text{PCM}$ system depends upon the sampling frequency employed is independent of the value of ' $n$ ' increases with increasing value of ' $n$ ' decreases with the increasing value of ' $n$ '
The signal to quantisation noise ratio in an $n$-bit $\text{PCM}$ systemdepends upon the sampling frequency employedis independent of the value of ' $n$ 'increases with i...
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974
GATE ECE 1995 | Question 1.44
In the infinite plance, $y=6 \mathrm{~m}$, there exists a uniform surface charge density of $(1600 \; \pi)$ $\mu \mathrm{C} / \mathrm{m}^{2}$. The associated electric field strength is $30 \; \mathrm{iV} / \mathrm{m}$ $30 \; \mathrm{jV} / \mathrm{m}$ $30 \; \mathrm{kV} / \mathrm{m}$ $60 \; \mathrm{iV} / \mathrm{m}$
In the infinite plance, $y=6 \mathrm{~m}$, there exists a uniform surface charge density of $(1600 \; \pi)$ $\mu \mathrm{C} / \mathrm{m}^{2}$. The associated electric fie...
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975
GATE ECE 1995 | Question 1.45
The intrinsic impedance of a lossy dielectric medium is given by $\frac{j \omega \mu}{\sigma}$ $\frac{j \omega \varepsilon}{\mu}$ $\sqrt{\frac{j \omega \mu}{\sigma+j \omega \varepsilon}}$ $\sqrt{\frac{\mu}{\varepsilon}}$
The intrinsic impedance of a lossy dielectric medium is given by$\frac{j \omega \mu}{\sigma}$$\frac{j \omega \varepsilon}{\mu}$$\sqrt{\frac{j \omega \mu}{\sigma+j \omega ...
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976
GATE ECE 1995 | Question 1.46
An antenna, when radiating, has a highly directional radiation pattern. When the antenna is receiving, its radiation pattern is more directive is less directive is the same exhibits no directivity at all
An antenna, when radiating, has a highly directional radiation pattern. When the antenna is receiving, its radiation patternis more directiveis less directiveis the samee...
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977
GATE ECE 1995 | Question 1.47
Copper behaves as a conductor always conductor or dielectric depending on the applied electric field strength conductor or dielectric depending on the frequency conductor or dielectric depending on the electric current density
Copper behaves as aconductor alwaysconductor or dielectric depending on the applied electric field strengthconductor or dielectric depending on the frequencyconductor or ...
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978
GATE ECE 1995 | Question 2.1
A series $\mathrm{R}-\mathrm{L}-\mathrm{C}$ circuit has a $\mathrm{Q}$ of $100$ and an impedance of $(100+j 0) \Omega$ at its resonant angular frequency of $10^{7}$ radian $/ \mathrm{sec}$. The values of $\text{R}$ and $\text{L}$ are : $\text{R} = $______ ohms, $\text{L} = $_______ ohms.
A series $\mathrm{R}-\mathrm{L}-\mathrm{C}$ circuit has a $\mathrm{Q}$ of $100$ and an impedance of $(100+j 0) \Omega$ at its resonant angular frequency of $10^{7}$ radia...
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979
GATE ECE 1995 | Question 2.2
A transistor having $\alpha=0.99$ and $\mathrm{V}_{\mathrm{BE}}=0.7 \mathrm{~V}$, is used in the circuit shown the figure is. The value of the collector current will be
A transistor having $\alpha=0.99$ and $\mathrm{V}_{\mathrm{BE}}=0.7 \mathrm{~V}$, is used in the circuit shown the figure is. The value of the collector current will be
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980
GATE ECE 1995 | Question 2.3
The circuit shown the given figure, supplies power to an $8 \; \Omega$ speaker, $\text{LS}$. The values of $\mathrm{I}_{\mathrm{C}}$ and $\mathrm{V}_{\mathrm{CE}}$ for this circuit will be : $\mathrm{I}_{\mathrm{C}} = $ __________ and $\mathrm{V}_{\mathrm{CE}} = $ ____________
The circuit shown the given figure, supplies power to an $8 \; \Omega$ speaker, $\text{LS}$. The values of $\mathrm{I}_{\mathrm{C}}$ and $\mathrm{V}_{\mathrm{CE}}$ for th...
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981
GATE ECE 1995 | Question 2.4
In the given circuit the given figure, if the voltage inputs $\mathrm{V}-$ and $\mathrm{V}+$ are to be amplified by the same amplification factor, the value of $R$ should be
In the given circuit the given figure, if the voltage inputs $\mathrm{V}-$ and $\mathrm{V}+$ are to be amplified by the same amplification factor, the value of $R$ should...
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982
GATE ECE 1995 | Question 2.5
An $\text{npn}$ transistor under forward-active mode of operation is biased at ${I}_{C} =1 \mathrm{~mA}$, and has a total emitter-base capacitance $\mathrm{C}_{K}$ of $12 \; \mathrm{pF}$, and the base transit time $\tau_{F}$ of ... $V_{T}=26 \; \mathrm{mV}$ ]
An $\text{npn}$ transistor under forward-active mode of operation is biased at ${I}_{C} =1 \mathrm{~mA}$, and has a total emitter-base capacitance $\mathrm{C}_{K}$ of $12...
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983
GATE ECE 1995 | Question 2.6
An $\text{RC}$-coupled amplifier is assumed to have a single-pole low frequency transfer function. The maximum lower cut-off frequency allowed for the amplifier to pass $50 \mathrm{~Hz}$ square wave with no more than $10 \%$ tilt is __________.
An $\text{RC}$-coupled amplifier is assumed to have a single-pole low frequency transfer function. The maximum lower cut-off frequency allowed for the amplifier to pass $...
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985
GATE ECE 1995 | Question 2.8
A power amplifiers delivers $50 \mathrm{~W}$ output at $50 \%$ efficiency. The ambient temperature is $25^{\circ} \mathrm{C}$. If the maximum allowable junction temperature is $150^{\circ} \mathrm{C}$, then the maximum thermal resistance $\phi_{j c}$ that can be tolerated is _________.
A power amplifiers delivers $50 \mathrm{~W}$ output at $50 \%$ efficiency. The ambient temperature is $25^{\circ} \mathrm{C}$. If the maximum allowable junction temperatu...
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986
GATE ECE 1995 | Question 2.9
An amplifier has an open-loop gain of $100$, and its lower-and upper-cut-off frequency of $100 \mathrm{~Hz}$ and $100 \; \mathrm{kHz}$, respectively. A feedback network with a feedback fact or of $0.99$ is connected to the amplifier. The new lower and upper-cut-off frequencies are at ________ and __________.
An amplifier has an open-loop gain of $100$, and its lower-and upper-cut-off frequency of $100 \mathrm{~Hz}$ and $100 \; \mathrm{kHz}$, respectively. A feedback network w...
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987
GATE ECE 1995 | Question 2.10
An $n$ – channel $\text{JFET}$ has $\mathrm{I}_{\text {DSS }}=1 \mathrm{~mA}$ and $\mathrm{V}_{P}=-5 \mathrm{~V}$. Its maximum transconductance is _________.
An $n$ – channel $\text{JFET}$ has $\mathrm{I}_{\text {DSS }}=1 \mathrm{~mA}$ and $\mathrm{V}_{P}=-5 \mathrm{~V}$.Its maximum transconductance is _________.
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988
GATE ECE 1995 | Question 3.1
(A) Fourier transform of a Gaussian function (B) Convolution of a Rectangular pulse with itself (C) Current through an inductor for a step input voltage Gaussian function Rectangular pulse Triangular pulse Ramp function Zero
(A) Fourier transform of a Gaussian function(B) Convolution of a Rectangular pulse with itself(C) Current through an inductor for a step input voltageGaussian function Re...
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990
GATE ECE 1995 | Question 3.3
In a $\text{JFET}$ if (A) the pinch-off voltage decreases (B) the transconductance increases (C) the transit time of the carriers in the channel is reduced the channel doping is reduced the channel length is increased the conductivity of the channel increased the channel length is reduced the Gate area is reduced
In a $\text{JFET}$ if(A) the pinch-off voltage decreases(B) the transconductance increases(C) the transit time of the carriers in the channel is reducedthe channel dopin...
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992
GATE ECE 1995 | Question 3.5
For a $\text{TTL}$ gate, match the following (A) $\mathrm{V}_{\mathrm{OH}}$ $\text{(min)}$ (B) $\mathrm{V}_{\mathrm{IH}}$ $\text{(min)}$ (C) $\mathrm{V}_{\mathrm{OL}}$ $\text{(max)}$. $2.4$ volts $1.5$ volts $0.4$ volts $2.0$ volts $0.8$ volts
For a $\text{TTL}$ gate, match the following(A) $\mathrm{V}_{\mathrm{OH}}$ $\text{(min)}$(B) $\mathrm{V}_{\mathrm{IH}}$ $\text{(min)}$(C) $\mathrm{V}_{\mathrm{OL}}$ $\tex...
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994
GATE ECE 1995 | Question 3.7
(A) Common-collector amplifier (B) Common-emitter amplifier (C) Common-base amplifier Provides voltage gain but no current gain Provides current gain but no voltage gain Provides neither voltage nor power gain Provides neither current nor power gain Provides both voltage and current gain
(A) Common-collector amplifier(B) Common-emitter amplifier(C) Common-base amplifierProvides voltage gain but no current gainProvides current gain but no voltage gainPro...
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996
GATE ECE 1996 | Question 1.1
In the given figure, $A_{1}, A_{2}$ and $A_{3}$ are ideal ammeters. If $\mathrm{A}_{2}$ and $\mathrm{A}_{3}$ read $3 \mathrm{~A}$ and $4 \mathrm{~A}$ respectvely, then $A_{1}$ should read $1 \mathrm{~A}$ $5 \mathrm{~A}$ $7 \mathrm{~A}$ None of these
In the given figure, $A_{1}, A_{2}$ and $A_{3}$ are ideal ammeters. If $\mathrm{A}_{2}$ and $\mathrm{A}_{3}$ read $3 \mathrm{~A}$ and $4 \mathrm{~A}$ respectvely, then $A...
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997
GATE ECE 1996 | Question 1.2
In the circuit of the given figure, assume that the diodes are ideal and the meter is an average indicating ammeter. The ammeter will read $0.4 \sqrt{2} \mathrm{~A}$ $0.4 \mathrm{~A}$ $\frac{0.8}{\pi} \mathrm{A}$ $\frac{0.4}{\pi}$
In the circuit of the given figure, assume that the diodes are ideal and the meter is an average indicating ammeter. The ammeter will read$0.4 \sqrt{2} \mathrm{~A}$$0.4 \...
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998
GATE ECE 1996 | Question 1.3
The number of independent loops for a network with $n$ nodes and $b$ branches is $n-1$ $b-n$ $b-n+1$ independent of the number of nodes
The number of independent loops for a network with $n$ nodes and $b$ branches is$n-1$$b-n$$b-n+1$independent of the number of nodes
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999
GATE ECE 1996 | Question 1.4
A lossless transmission line having $50 \; \Omega$ charateristic impedance and lengh $\lambda / 4$ is short circuited at one end and connected to an ideal voltage source of $1 \mathrm{~V}$ at the other end. The current drawn from the voltage source is $0$ $0.02 \mathrm{~A}$ $\infty$ none of these
A lossless transmission line having $50 \; \Omega$ charateristic impedance and lengh $\lambda / 4$ is short circuited at one end and connected to an ideal voltage source ...
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1000
GATE ECE 1996 | Question 1.5
The $p$ – type substrate in a conventional $p n$ – junction isolated integrated circuit should be connected to nowhere, i.e. left floating a $dc$ ground potential the most positive potential available in the circuit the most negative potential available in the circuit
The $p$ – type substrate in a conventional $p n$ – junction isolated integrated circuit should be connected tonowhere, i.e. left floatinga $dc$ ground potentialthe mo...
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