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GATE ECE 2007 | Question: 64
An air-filled rectangular waveguide has inner dimensions of $3 \mathrm{~cm} \times 2 \mathrm{~cm}$. The wave impedance of the $\mathrm{TE}_{20}$ mode of propagation in the waveguide at a frequency of $30 \; \mathrm{GHz}$ is (free space impedance $\eta_{0}=377 \; \Omega)$ $308 \; \Omega$ $355 \; \Omega$ $400 \; \Omega$ $461 \; \Omega$
An air-filled rectangular waveguide has inner dimensions of $3 \mathrm{~cm} \times 2 \mathrm{~cm}$. The wave impedance of the $\mathrm{TE}_{20}$ mode of propagation in th...
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GATE ECE 2007 | Question: 65
The $\vec{H}$ field (in $\mathrm{A/m}$ ) of a plane wave propagating in free space is given by \[ \vec{H}=\hat{x} \frac{5 \sqrt{3}}{\eta_{0}} \cos (\omega t-\beta z)+\hat{y} \frac{5}{\eta_{0}} \sin \left(\omega t-\beta z+\frac{\pi}{2}\right) ... average power flow density in Watts is $\frac{\eta_{0}}{100}$ $\frac{100}{\eta_{0}}$ $50 \eta_{0}^{2}$ $\frac{50}{\eta_{0}}$
The $\vec{H}$ field (in $\mathrm{A/m}$ ) of a plane wave propagating in free space is given by\[ \vec{H}=\hat{x} \frac{5 \sqrt{3}}{\eta_{0}} \cos (\omega t-\beta z)+\hat{...
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GATE ECE 2007 | Question: 66
The $\vec{E}$ field in a rectangular waveguide of inner dimensions $a \times b$ is given by \[ \vec{E}=\frac{\omega \mu}{h^{2}}\left(\frac{\pi}{a}\right) H_{0} \sin \left(\frac{2 \pi x}{a}\right) \sin (\omega t-\beta z) \hat{y}\] where ... respectively. The mode of propagation in the waveguide is $\mathrm{TE}_{20}$ $\mathrm{TM}_{11}$ $\mathrm{TM}_{20}$ $\text{TE}_{10}$
The $\vec{E}$ field in a rectangular waveguide of inner dimensions $a \times b$ is given by\[ \vec{E}=\frac{\omega \mu}{h^{2}}\left(\frac{\pi}{a}\right) H_{0} \sin \left(...
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GATE ECE 2007 | Question: 67
A load of $50\; \Omega$ is connected in shunt in a $2$-wire transmission line of $Z_{0}=50 \;\Omega$ as shown in the figure. The $2$-port scattering parameter matrix $\text{(S-matrix)}$ ...
A load of $50\; \Omega$ is connected in shunt in a $2$-wire transmission line of $Z_{0}=50 \;\Omega$ as shown in the figure. The $2$-port scattering parameter matrix $\te...
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GATE ECE 2007 | Question: 68
The parallel branches of a $2$-wire transmission line are terminated in $100 \; \Omega$ and $200 \; \Omega$ resistors as shown in the figure. The characteristic impedance of the line is $Z_{0}=50 \; \Omega$ and each section has a length of $\lambda / 4$. The voltage reflection ... $-j \frac{7}{5}$ $\frac{-5}{7}$ $j \frac{5}{7}$ $\frac{5}{7}$
The parallel branches of a $2$-wire transmission line are terminated in $100 \; \Omega$ and $200 \; \Omega$ resistors as shown in the figure. The characteristic impedance...
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GATE ECE 2007 | Question: 69
A $\dfrac{\lambda}{2}$ dipole is kept horizontally at a height of $\dfrac{\lambda_{0}}{2}$ above a perfectly conducting infinite ground plane. The radiation pattern in the plane of the dipole ( $\vec{E}$ plane) looks approximately as
A $\dfrac{\lambda}{2}$ dipole is kept horizontally at a height of $\dfrac{\lambda_{0}}{2}$ above a perfectly conducting infinite ground plane. The radiation pattern in th...
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GATE ECE 2007 | Question: 70
A right circularly polarized (RCP) plane wave is incident at an angle of $60^{\circ}$ to the normal, on an air-dielectric interface. If the reflected wave is linearly polarized, the relative dielectric constant $\varepsilon_{r 2}$ is $\sqrt{2}$ $\sqrt{3}$ $2$ $3$
A right circularly polarized (RCP) plane wave is incident at an angle of $60^{\circ}$ to the normal, on an air-dielectric interface. If the reflected wave is linearly pol...
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GATE ECE 2007 | Question: 71
The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a $\mathrm{Metal} / \mathrm{SiO}_{2} / \text{silicon (MOS)}$ capacitor having an area of $1 \times 10^{-4} \mathrm{~cm}^{2}$ ... is $50 \; \mathrm{~nm}$ $143 \; \mathrm{~nm}$ $350 \; \mathrm{~nm}$ $1 \; \mu \mathrm{m}$
The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a $\mathrm{Metal} / \mathrm{SiO}_{2} / \text{silicon (MOS)}$ capacitor having an area of ...
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GATE ECE 2007 | Question: 72
The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a $\mathrm{Metal} / \mathrm{SiO}_{2} / \text{silicon (MOS)}$ capacitor having an area of $1 \times 10^{-4} \mathrm{~cm}^{2}$ ... $0.857 \; \mu \mathrm{m}$ $1 \; \mu \mathrm{m}$ $1.143 \; \mu \mathrm{m}$
The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a $\mathrm{Metal} / \mathrm{SiO}_{2} / \text{silicon (MOS)}$ capacitor having an area of ...
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GATE ECE 2007 | Question: 73
The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a $\mathrm{Metal} / \mathrm{SiO}_{2} / \text{silicon (MOS)}$ capacitor having an area of $1 \times 10^{-4} \mathrm{~cm}^{2}$ ... is false $\mathrm{S} 1$ is false and $\mathrm{S} 2$ is true Both $\text{S1}$ and $\text{S2}$ are false
The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a $\mathrm{Metal} / \mathrm{SiO}_{2} / \text{silicon (MOS)}$ capacitor having an area of ...
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GATE ECE 2007 | Question: 74
Two $4$-ary signal constellations are shown. It is given that $\phi_{1}$ and $\phi_{2}$ constitute an orthonormal basis for the two constellations. Assume that the four symbols in both the constellations are equiprobable. Let $\frac{N_{0}}{2}$ denote the power ... average energy of Constellation $1$ to the average energy of Constellation $2$ is $4 a^{2}$ $4$ $2$ $8$
Two $4$-ary signal constellations are shown. It is given that $\phi_{1}$ and $\phi_{2}$ constitute an orthonormal basis for the two constellations. Assume that the four s...
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GATE ECE 2007 | Question: 75
Two $4$-ary signal constellations are shown. It is given that $\phi_{1}$ and $\phi_{2}$ ... both the constellations The value of $N_{0}$ will determine which of the two constellations has a lower probability of symbol error
Two $4$-ary signal constellations are shown. It is given that $\phi_{1}$ and $\phi_{2}$ constitute an orthonormal basis for the two constellations. Assume that the four s...
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GATE ECE 2007 | Question: 76
Consider the Op-Amp circuit shown in the figure. The transfer function $V_{o}(s) / V_{i}(s)$ is $\frac{1-s R C}{1+s R C}$ $\frac{1+s R C}{1-s R C}$ $\frac{1}{1-s R C}$ $\frac{1}{1+s R C}$
Consider the Op-Amp circuit shown in the figure.The transfer function $V_{o}(s) / V_{i}(s)$ is$\frac{1-s R C}{1+s R C}$$\frac{1+s R C}{1-s R C}$$\frac{1}{1-s R C}$$\frac{...
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GATE ECE 2007 | Question: 77
Consider the Op-Amp circuit shown in the figure. If $V_{i}=V_{1} \sin (\omega t)$ and $V_{o}=V_{2} \sin (\omega t+\phi)$, then the minimum and maximum values of $\phi$ (in radians) are respectively $-\pi / 2$ and $\pi / 2$ $0$ and $\pi / 2$ $-\pi$ and $0$ $-\pi / 2$ and $0$
Consider the Op-Amp circuit shown in the figure.If $V_{i}=V_{1} \sin (\omega t)$ and $V_{o}=V_{2} \sin (\omega t+\phi)$, then the minimum and maximum values of $\phi$ (in...
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GATE ECE 2007 | Question: 78
An $8085$ assembly language program is given below. Line 1: MVI A,B5H 2: MVI B0EH 3: XRI 69H 4: ADD B 5: ANI 9BH 6: CPI 9FH 7: STA 3010H 8: HLT The contents of the accumulator just after execution of the $\textsf{ADD}$ instruction in line $4$ will be $\text{C3H}$ $\text{EAH}$ $\mathrm{DCH}$ $69 \mathrm{H}$
An $8085$ assembly language program is given below.Line 1: MVI A,B5H 2: MVI B0EH 3: XRI 69H 4: ADD B 5: ANI 9BH 6: CPI 9FH 7: STA 3010H 8: HLTThe contents of the accumula...
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GATE ECE 2007 | Question: 79
An $8085$ assembly language program is given below. Line 1: MVI A, B5H 2: MVI B, 0EH 3: XRI 69H 4: ADD B 5: ANI 9BH 6: CPI 9FH 7: STA 3010H 8: HLT After execution of line $7$ of the program, the status of the $\text{CY}$ and $\mathrm{Z}$ flags will be $\mathrm{CY}=0, \mathrm{Z}=0$ $\text{CY=0, Z=1}$ $\mathrm{CY}=1, \mathrm{Z}=0$ $\mathrm{CY}=1, \mathrm{Z}=1$
An $8085$ assembly language program is given below.Line 1: MVI A, B5H 2: MVI B, 0EH 3: XRI 69H 4: ADD B 5: ANI 9BH 6: CPI 9FH 7: STA 3010H 8: HLT After execution of line ...
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GATE ECE 2007 | Question: 80
Consider a linear system whose state space representation is $\dot{\mathbf{x}}(t)=\mathbf{A} \mathbf{x}(t)$. If the initial state vector of the system is $\mathbf{x}(0)=\left[\begin{array}{r}1 \\ -2\end{array}\right]$ ... $\left(1,\left[\begin{array}{r}1 \\ -2\end{array}\right]\right)$
Consider a linear system whose state space representation is $\dot{\mathbf{x}}(t)=\mathbf{A} \mathbf{x}(t)$. If the initial state vector of the system is $\mathbf{x}(0)=\...
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GATE ECE 2007 | Question: 81
Consider a linear system whose state space representation is $\dot{\mathbf{x}}(t)=\mathbf{A} \mathbf{x}(t)$. If the initial state vector of the system is $\mathbf{x}(0)=\left[\begin{array}{r}1 \\ -2\end{array}\right]$ ... $\left[\begin{array}{rr}0 & 1 \\ -2 & -3\end{array}\right]$
Consider a linear system whose state space representation is $\dot{\mathbf{x}}(t)=\mathbf{A} \mathbf{x}(t)$. If the initial state vector of the system is $\mathbf{x}(0)=\...
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GATE ECE 2007 | Question: 82
An input to a $6$-level quantizer has the probability density function $f(x)$ as shown in the figure. Decision boundaries of the quantizer are chosen so as to maximize the entropy of the quantizer output. It is given that $3$ consecutive decision boundaries are $\text{ -1', 0'}$ ... $b=3 / 40$ $a=1 / 4$ and $b=1 / 16$ $a=1 / 3$ and $b=1 / 24$
An input to a $6$-level quantizer has the probability density function $f(x)$ as shown in the figure. Decision boundaries of the quantizer are chosen so as to maximize th...
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GATE ECE 2007 | Question: 83
An input to a $6$-level quantizer has the probability density function $f(x)$ as shown in the figure. Decision boundaries of the quantizer are chosen so as to maximize the entropy of the quantizer output. It is given that $3$ ... of signal power to quantization noise power is $\frac{152}{9}$ $\frac{64}{3}$ $\frac{76}{3}$ $28$
An input to a $6$-level quantizer has the probability density function $f(x)$ as shown in the figure. Decision boundaries of the quantizer are chosen so as to maximize th...
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GATE ECE 2007 | Question: 84
In the Digital-to-Analog converter circuit shown in the figure below, $V_{R}=10 \mathrm{~V}$ and $\mathrm{R}=10 \; \mathrm{k} \Omega$. The current $i$ is $31.25 \; \mu \mathrm{A}$ $62.5 \; \mu \mathrm{A}$ $125 \; \mu \mathrm{A}$ $250 \; \mu \mathrm{A}$
In the Digital-to-Analog converter circuit shown in the figure below, $V_{R}=10 \mathrm{~V}$ and $\mathrm{R}=10 \; \mathrm{k} \Omega$.The current $i$ is$31.25 \; \mu \mat...
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GATE ECE 2007 | Question: 85
In the Digital-to-Analog converter circuit shown in the figure below, $V_{R}=10 \mathrm{~V}$ and $\mathrm{R}=10 \; \mathrm{k} \Omega$. The voltage $V_{o}$ is $-0.781 \mathrm{~V}$ $-1.562 \mathrm{~V}$ $-3.125 \mathrm{~V}$ $-6.250 \mathrm{~V}$
In the Digital-to-Analog converter circuit shown in the figure below, $V_{R}=10 \mathrm{~V}$ and $\mathrm{R}=10 \; \mathrm{k} \Omega$.The voltage $V_{o}$ is$-0.781 \mathr...
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GATE ECE 2008 | Question: 1
All the four entries of the $2 \times 2$ matrix $\mathbf{P}=\left[\begin{array}{ll}p_{11} & p_{12} \\ p_{21} & p_{22}\end{array}\right]$ are nonzero, and one of its eigenvalues is zero. Which of the following statements is true? $p_{11} p_{22}-p_{12} p_{21}=1$ $p_{11} p_{22}-p_{12} p_{21}=-1$ $p_{11} p_{22}-p_{12} p_{21}=0$ $p_{11} p_{22}+p_{12} p_{21}=0$
All the four entries of the $2 \times 2$ matrix $\mathbf{P}=\left[\begin{array}{ll}p_{11} & p_{12} \\ p_{21} & p_{22}\end{array}\right]$ are nonzero, and one of its eigen...
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GATE ECE 2008 | Question: 2
The system of linear equations \[ \begin{array}{l} 4 x+2 y=7 \\ 2 x+y=6 \end{array} \] has a unique solution no solution an infinite number of solutions exactly two distinct solutions
The system of linear equations\[ \begin{array}{l}4 x+2 y=7 \\2 x+y=6\end{array} \]hasa unique solutionno solutionan infinite number of solutionsexactly two distinct solut...
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GATE ECE 2008 | Question: 3
The equation $\sin (z)=10$ has no real or complex solution exactly two distinct complex solutions a unique solution an infinite number of complex solutions
The equation $\sin (z)=10$ hasno real or complex solutionexactly two distinct complex solutionsa unique solutionan infinite number of complex solutions
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GATE ECE 2008 | Question: 4
For real values of $x$, the minimum value of the function $f(x)=\exp (x)+\exp (-x)$ is $2$ $1$ $0.5$ $0$
For real values of $x$, the minimum value of the function $f(x)=\exp (x)+\exp (-x)$ is$2$$1$$0.5$$0$
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GATE ECE 2008 | Question: 5
Which of the following functions would have only odd powers of $x$ in its Taylor series expansion about the point $x=0?$ $\sin \left(x^{3}\right)$ $\sin \left(x^{2}\right)$ $\cos \left(x^{3}\right)$ $\cos \left(x^{2}\right)$
Which of the following functions would have only odd powers of $x$ in its Taylor series expansion about the point $x=0?$ $\sin \left(x^{3}\right)$$\sin \left(x^{2}\right)...
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GATE ECE 2008 | Question: 6
Which of the following is a solution to the differential equation $\dfrac{d x(t)}{d t}+3 x(t)=0?$ $x(t)=3 e^{-t}$ $x(t)=2 e^{-3 t}$ $x(t)=-\frac{3}{2} t^{2}$ $x(t)=3 t^{2}$
Which of the following is a solution to the differential equation $\dfrac{d x(t)}{d t}+3 x(t)=0?$ $x(t)=3 e^{-t}$$x(t)=2 e^{-3 t}$$x(t)=-\frac{3}{2} t^{2}$$x(t)=3 t^{2}$
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GATE ECE 2008 | Question: 7
In the following graph, the number of trees $\text{(P)}$ and the number of cut-sets $\text{(Q)}$ are $\mathrm{P}=2, \mathrm{Q}=2$ $\mathrm{P}=2, \mathrm{Q}=6$ $\mathrm{P}=4, \mathrm{Q}=6$ $\mathrm{P}=4, \mathrm{Q}=10$
In the following graph, the number of trees $\text{(P)}$ and the number of cut-sets $\text{(Q)}$ are$\mathrm{P}=2, \mathrm{Q}=2$$\mathrm{P}=2, \mathrm{Q}=6$$\mathrm{P}=4,...
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GATE ECE 2008 | Question: 8
In the following circuit, the switch $\mathrm{S}$ is closed at $t=0$. The rate of change of current $\dfrac{d i}{d t}(0+)$ is given by $0$ $\frac{R_{S} I_{S}}{L}$ $\frac{\left(R+R_{s}\right) I_{s}}{L}$ $\infty$
In the following circuit, the switch $\mathrm{S}$ is closed at $t=0$. The rate of change of current $\dfrac{d i}{d t}(0+)$ is given by$0$$\frac{R_{S} I_{S}}{L}$$\frac{\le...
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GATE ECE 2008 | Question: 9
The input and output of a continuous time system are respectively denoted by $x(t)$ and $y(t)$. Which of the following descriptions corresponds to a causal system? $y(t)=x(t-2)+x(t+4)$ $y(t)=(t-4) x(t+1)$ $y(t)=(t+4) x(t-1)$ $y(t)=(t+5) x(t+5)$
The input and output of a continuous time system are respectively denoted by $x(t)$ and $y(t)$. Which of the following descriptions corresponds to a causal system?$y(t)=x...
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GATE ECE 2008 | Question: 10
The impulse response $h(t)$ of a linear time-invariant continuous time system is described by $h(t)=\exp (\alpha t) u(t)+\exp (\beta t) u(-t)$, where $u(t)$ denotes the unit step function, and $\alpha$ and $\beta$ are real constants. ... $\beta$ is negative $\alpha$ is positive and $\beta$ is negative $\alpha$ is negative and $\beta$ is positive
The impulse response $h(t)$ of a linear time-invariant continuous time system is described by $h(t)=\exp (\alpha t) u(t)+\exp (\beta t) u(-t)$, where $u(t)$ denotes the u...
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GATE ECE 2008 | Question: 11
The pole-zero plot given below corresponds to a Low pass filter High pass filter Band pass filter Notch filter
The pole-zero plot given below corresponds to aLow pass filterHigh pass filterBand pass filterNotch filter
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GATE ECE 2008 | Question: 12
Step responses of a set of three second-order underdamped systems all have the same percentage overshoot. Which of the following diagrams represents the poles of the three systems?
Step responses of a set of three second-order underdamped systems all have the same percentage overshoot. Which of the following diagrams represents the poles of the thre...
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GATE ECE 2008 | Question: 13
Which of the following is NOT associated with a $\text{p-n}$ junction? Junction Capacitance Charge Storage Capacitance Depletion Capacitance Channel Length Modulation
Which of the following is NOT associated with a $\text{p-n}$ junction?Junction CapacitanceCharge Storage CapacitanceDepletion CapacitanceChannel Length Modulation
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GATE ECE 2008 | Question: 14
Which of the following is true? A silicon wafer heavily doped with boron is a $p^{+}$substrate A silicon wafer lightly doped with boron is a $p^{+}$ substrate A silicon wafer heavily doped with arsenic is a $\mathrm{p}^{+}$substrate A silicon wafer lightly doped with arsenic is a $p^{+}$ substrate
Which of the following is true?A silicon wafer heavily doped with boron is a $p^{+}$substrateA silicon wafer lightly doped with boron is a $p^{+}$ substrateA silicon wafe...
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GATE ECE 2008 | Question: 15
For a Hertz dipole antenna, the half power beam width $\text{(HPBW)}$ in the $\text{E}$-plane is $360^{\circ}$ $180^{\circ}$ $90^{\circ}$ $45^{\circ}$
For a Hertz dipole antenna, the half power beam width $\text{(HPBW)}$ in the $\text{E}$-plane is$360^{\circ}$$180^{\circ}$$90^{\circ}$$45^{\circ}$
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GATE ECE 2008 | Question: 16
For static electric and magnetic fields in an inhomogeneous source-free medium, which of the following represents the correct form of two of Maxwell's equations? $\begin{array}{II}\nabla \bullet \mathbf{E}=0 \\ \nabla \times \textbf{B} = 0 \end{array} $ ... $\begin{array}{II}\nabla \times \mathbf{E}=0 \\ \nabla \bullet \textbf{B} = 0 \end{array}$
For static electric and magnetic fields in an inhomogeneous source-free medium, which of the following represents the correct form of two of Maxwell's equations?$\begin{a...
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GATE ECE 2008 | Question: 17
In the following limiter circuit, an input voltage $V_{i}=10 \sin 100 \pi t$ is applied. Assume that the diode drop is $0.7 \mathrm{~V}$ when it is forward biased. The Zener breakdown voltage is $6.8 \mathrm{~V}$. The maximum and minimum values of the output voltage respectively ... $7.5 \mathrm{~V},-0.7 \mathrm{~V}$ $7.5 \mathrm{~V},-7.5 \mathrm{~V}$
In the following limiter circuit, an input voltage $V_{i}=10 \sin 100 \pi t$ is applied. Assume that the diode drop is $0.7 \mathrm{~V}$ when it is forward biased. The Ze...
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GATE ECE 2008 | Question: 18
A silicon wafer has $100 \mathrm{~nm}$ of oxide on it and is inserted in a furnace at a temperature above $1000^{\circ} \mathrm{C}$ for further oxidation in dry oxygen. The oxidation rate is independent of current oxide ... of current oxide thickness but depends on temperature slows down as the oxide grows is zero as the existing oxide prevents further oxidation
A silicon wafer has $100 \mathrm{~nm}$ of oxide on it and is inserted in a furnace at a temperature above $1000^{\circ} \mathrm{C}$ for further oxidation in dry oxygen. T...
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