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1082
GATE ECE 2005 | Question: 74
An output of a communication channel is a random variable $v$ with the probability density function as shown in the figure The mean square value of $v$ is $4$ $6$ $8$ $9$
An output of a communication channel is a random variable $v$ with the probability density function as shown in the figure The mean square value of $v$ is$4$$6$$8$$9$
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1083
GATE ECE 2005 | Question: 75
Which one of the following does represent the electric field lines for the $\mathrm{TE}_{\mathrm{O}_{2}}$ mode in the cross-section of a hollow rectangular metallic waveguide?
Which one of the following does represent the electric field lines for the $\mathrm{TE}_{\mathrm{O}_{2}}$ mode in the cross-section of a hollow rectangular metallic waveg...
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1084
GATE ECE 2005 | Question: 76
Characteristic impedance of a transmission line is $50 \Omega$. Input impedance of the open-circuited line is $Z_{a^{-}}=100+j 150 \Omega$. When the transmission line is short- circuited, then value of the input impedance will be $50 \Omega$ $100+j 150 \Omega$ $7.69+j 11.54 \Omega$ $7.69-j 11.54 \Omega$
Characteristic impedance of a transmission line is $50 \Omega$. Input impedance of the open-circuited line is $Z_{a^{-}}=100+j 150 \Omega$. When the transmission line is ...
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1085
GATE ECE 2005 | Question: 77
Two identical and parallel dipole antennas are kept apart by a distance of $\frac{\lambda}{4}$ in the H-plane. They are fed with equal currents but the right most antenna has a phase shift of $+90^{\circ}$. The radiation pattern is given as
Two identical and parallel dipole antennas are kept apart by a distance of $\frac{\lambda}{4}$ in the H-plane. They are fed with equal currents but the right most antenna...
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1089
GATE ECE 2005 | Question: 81a
Statement for Linked Answer Questions 81 a and 81 b: Consider an $8085$ microprocessor system The following program starts at location $0100 \mathrm{H}$ ... the program counter reaches $0109 \mathrm{H}$ is $20 \mathrm{H}$ $02 \mathrm{H}$ $00 \mathrm{H}$ $\mathrm{FFH}$
Statement for Linked Answer Questions 81 a and 81 b:Consider an $8085$ microprocessor systemThe following program starts at location $0100 \mathrm{H}$.$\begin{array}{l} \...
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1092
GATE ECE 2005 | Question: 84a
Statement of Linked Answer Questions 84a and 84b: Voltage standing wave pattern in a lossless transmission line with characteristic impedance $50 \mathrm{~W}$ and a resistive load is shown in the figure. The value of the load resistance is $50 \; \Omega$ $200 \; \Omega$ $12.5 \; \Omega$ $0 \; \Omega 2$
Statement of Linked Answer Questions 84a and 84b:Voltage standing wave pattern in a lossless transmission line with characteristic impedance $50 \mathrm{~W}$ and a resist...
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1093
GATE ECE 2005 | Question: 85a
Statement of Linked Answer Questions 85a and 85b A sequence $x(n)$ has non-zero values as shown in the figure The sequence $y(n)=\left\{x\left(\frac{n}{2}-1\right)\right.$ will be
Statement of Linked Answer Questions 85a and 85bA sequence $x(n)$ has non-zero values as shown in the figureThe sequence $y(n)=\left\{x\left(\frac{n}{2}-1\right)\right.$ ...
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1094
GATE ECE 1995 | Question 1.1
A $\text{DC}$ voltage source is connected across a series $\text{R-L-C}$ circuit. Under steady-state conditions, the applied $\text{DC}$ voltage drops entirely across the $R$ only $L$ only $C$ only $\mathrm{R}$ and $\mathrm{L}$ combination
A $\text{DC}$ voltage source is connected across a series $\text{R-L-C}$ circuit. Under steady-state conditions, the applied $\text{DC}$ voltage drops entirely across the...
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1095
GATE ECE 1995 | Question 1.2
Consider a $\text{DC}$ voltage source connected to a series $\mathrm{R}-\mathrm{C}$ circuit. When the steady-state reaches, the ratio of the energy stored in the capacitor to the total energy supplied by the voltage source, is equal to $0.362$ $0.500$ $0.632$ $1,000$
Consider a $\text{DC}$ voltage source connected to a series $\mathrm{R}-\mathrm{C}$ circuit. When the steady-state reaches, the ratio of the energy stored in the capacito...
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1096
GATE ECE 1995 | Question 1.3
Two $2 \; \mathrm{H}$ inductance coils are connected in series and are also magnetically coupled to each other the coefficient of coupling being $0.1$. The total inductance of the combination can be $0.4 \; \mathrm{H}$ $3.2 \; \mathrm{H}$ $4.0 \; \mathrm{H}$ $3.3 \; \mathrm{H}$
Two $2 \; \mathrm{H}$ inductance coils are connected in series and are also magnetically coupled to each other the coefficient of coupling being $0.1$. The total inductan...
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1097
GATE ECE 1995 | Question 1.4
The $\text{RMS}$ value of a rectangular wave of period $T$, having a value of $+V$ for a duration, $T_1(<T)$ and $-V$ for the duration, $T-T_1=T_2$, equals $\mathrm{V}$ $\frac{\mathrm{T}_1-\mathrm{T}_2}{\mathrm{~T}} \mathrm{~V}$ $\frac{\mathrm{V}}{\sqrt{2}}$ $\frac{\mathrm{T}_1}{\mathrm{~T}_2} \mathrm{~V}$
The $\text{RMS}$ value of a rectangular wave of period $T$, having a value of $+V$ for a duration, $T_1(<T)$ and $-V$ for the duration, $T-T_1=T_2$, equals$\mathrm{V}$$\f...
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1098
GATE ECE 1995 | Question 1.5
If $L[f(t)]=\frac{2(s+1)}{s^{2}+2 s+5}$ then $f(0+)$ and $f(\infty)$ are given by $0, 2$ respectively $2, 0$ respectively $0,1$ respectively $2/5, 0$ respectively [Note : 'L' stands for 'Laplace Transform of']
If $L[f(t)]=\frac{2(s+1)}{s^{2}+2 s+5}$ then $f(0+)$ and $f(\infty)$ are given by$0, 2$ respectively$2, 0$ respectively$0,1$ respectively$2/5, 0$ respectively[Note : 'L' ...
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1099
GATE ECE 1995 | Question 1.6
The value of the resistance, $R$, connected across the terminals, $A$ and $B$, which will absorb the maximum power, is . $4.00 \; \mathrm{k} \Omega$ $4.11 \; \mathrm{k} \Omega$ $8.00 \; \mathrm{k} \Omega$ $9.00 \; \mathrm{k} \Omega$
The value of the resistance, $R$, connected across the terminals, $A$ and $B$, which will absorb the maximum power, is. $4.00 \; \mathrm{k} \Omega$$4.11 \; \mathrm{k} \Om...
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1101
GATE ECE 1995 | Question 1.8
Signal flow graph is used to find stability of the system controllability of the system transfer function of the system poles of the system
Signal flow graph is used to findstability of the systemcontrollability of the systemtransfer function of the systempoles of the system
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1102
GATE ECE 1995 | Question 1.9
The step error coefficient of a system $\mathrm{G}(\mathrm{s})=\frac{1}{(s+6)(s+1)}$ with unity feedback is $1 / 6$ $\infty$ $0$ $1$
The step error coefficient of a system $\mathrm{G}(\mathrm{s})=\frac{1}{(s+6)(s+1)}$ with unity feedback is$1 / 6$$\infty$$0$$1$
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1103
GATE ECE 1995 | Question 1.10
The final value theorem is used to find the steady-state value of the system output initial value of the system output transient behaviour of the system output none of these
The final value theorem is used to find thesteady-state value of the system outputinitial value of the system outputtransient behaviour of the system outputnone of these
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1104
GATE ECE 1995 | Question 1.11
For a second order system, damping ratio, $(\xi)$ is $0<\xi<1$, then the roots of the characteristic polynomial are real but not equal real and equal complex conjugates imaginary
For a second order system, damping ratio, $(\xi)$ is $0<\xi<1$, then the roots of the characteristic polynomial arereal but not equalreal and equalcomplex conjugatesimagi...
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1105
GATE ECE 1995 | Question 1.12
The transfer function of a linear system is the ratio of the output, $v_{0}(t)$, and input, $v_{i}(t)$ ratio of the derivatives of the output and the input ratio of the Laplace transform of the output and that of the input with all initial conditions zeros none of these
The transfer function of a linear system is theratio of the output, $v_{0}(t)$, and input, $v_{i}(t)$ratio of the derivatives of the output and the inputratio of the Lapl...
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1106
GATE ECE 1995 | Question 1.13
$e^{A t}$ can be expanded as $\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k}}{(k+1) !}$ $\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k}}{k !}$ $\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k+1}}{(k+1) !}$ $\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k+1}}{k !}$
$e^{A t}$ can be expanded as$\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k}}{(k+1) !}$$\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k}}{k !}$$\sum_{k=0}^{\infty} \frac{\ma...
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1107
GATE ECE 1995 | Question 1.14
Non-minimum phase transfer function is defined as the transfer function. which has zeros in the right-half $S$-plane which has zeros only in the left-half $S$-plane which has poles in the right-half $S$-plane which has poles in the left-half $S$-plane
Non-minimum phase transfer function is defined as the transfer function.which has zeros in the right-half $S$-planewhich has zeros only in the left-half $S$-planewhich ha...
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1108
GATE ECE 1995 | Question 1.15
The solution of $X=A(t) X(t)$, is $e^{\mathrm{At}} \cdot \mathrm{X}_{0}$ $e^{\int_{t_{a}}^{\prime} A(\tau) d \tau}. X_{0}$ $\left[I+\int_{t_{a}}^{t} \mathrm{~A}(\tau) d \tau\right] \mathrm{X}_{0}$ none of these
The solution of $X=A(t) X(t)$, is$e^{\mathrm{At}} \cdot \mathrm{X}_{0}$$e^{\int_{t_{a}}^{\prime} A(\tau) d \tau}. X_{0}$$\left[I+\int_{t_{a}}^{t} \mathrm{~A}(\tau) d \tau...
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1109
GATE ECE 1995 | Question 1.16
Let $h(t)$ be the impulse response of a linear time invariant system. Then the response of the system for any input $u(t)$ is $\int_{0}^{t} h(\tau) u(t-\tau) d \tau$ $\frac{d}{d t} \int_{0}^{t} h(\tau) u(t-\tau) d \tau$ $\left[\int_{0}^{t} h(\tau) u(t-\tau) d \tau\right]$ $\int_{0}^{t} h^{2}(\tau) u(t-\tau) d \tau$
Let $h(t)$ be the impulse response of a linear time invariant system. Then the response of the system for any input $u(t)$ is$\int_{0}^{t} h(\tau) u(t-\tau) d \tau$$\frac...
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1110
GATE ECE 1995 | Question 1.17
The probability that an electron in a metal occupies the Fermi-level at any temperature $(>0 \mathrm{~K})$ $0$ $1$ $0.5$ $1.0$
The probability that an electron in a metal occupies the Fermi-level at any temperature $(>0 \mathrm{~K})$$0$$1$$0.5$$1.0$
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1112
GATE ECE 1995 | Question 1.19
The diffusion potential across a $\text{P-N}$ junction decreases with increasing doping concentration increases with decreasing band gap does not depend on doping concentration increases with increase in doping concentrations
The diffusion potential across a $\text{P-N}$ junctiondecreases with increasing doping concentrationincreases with decreasing band gapdoes not depend on doping concentrat...
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1113
GATE ECE 1995 | Question 1.20
The break down voltage of a transistor with its base open is $\mathrm{BV}_{\mathrm{CEO}}$ and that with emitter open is $\mathrm{BV}_{\mathrm{CBO}^{ }}$ then $\mathrm{BV}_{\mathrm{CEO}}=\mathrm{BV}_{\mathrm{CBO}}$ ... $\mathrm{BV}_{\mathrm{CEO}}$ is not related to $\mathrm{BV}_{\mathrm{CBO}}$
The break down voltage of a transistor with its base open is $\mathrm{BV}_{\mathrm{CEO}}$ and that with emitter open is $\mathrm{BV}_{\mathrm{CBO}^{‘}}$ then$\mathrm{BV...
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1114
GATE ECE 1995 | Question 1.21
In a $\text{P}$ type silicon sample, the hole concentration is $2.25 \times 10^{15} / \mathrm{cm}^{3}$. If the intrinsic carrier concentration is $1.5 \times 10^{10} / \mathrm{cm}^{3}$, the electron concentration is zero $10^{10} / \mathrm{cm}^{3}$ $10^{5} / \mathrm{cm}^{3}$ $1.5 \times 10^{25} / \mathrm{cm}^{3}$.
In a $\text{P}$ type silicon sample, the hole concentration is $2.25 \times 10^{15} / \mathrm{cm}^{3}$. If the intrinsic carrier concentration is $1.5 \times 10^{10} / \m...
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1115
GATE ECE 1995 | Question 1.22
A zener diode works on the principle of tunneling of charge carriers across the junction thermionic emission diffusion of charge carriers across the junction hopping of charge carriers across the junction
A zener diode works on the principle oftunneling of charge carriers across the junctionthermionic emissiondiffusion of charge carriers across the junctionhopping of charg...
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1116
GATE ECE 1995 | Question 1.23
A $\text{BJT}$ is said to be operating in the saturation region if both the junctions are reverse biased base-emitter junction is reverse biased and base-collector junction is forward biased base-emitter junction is forward biased and base-collector junction reverse-biased both the junctions are forward biased
A $\text{BJT}$ is said to be operating in the saturation region ifboth the junctions are reverse biasedbase-emitter junction is reverse biased and base-collector junction...
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1117
GATE ECE 1995 | Question 1.24
The depletion capacitance, $\mathrm{C}_{\mathrm{J}}$, of an abrupt $\mathrm{P}-\mathrm{N}$ junction with constant doping on either side varies with reverse bias, $V_{R^{\prime}}$ as $C_{\mathrm{J}} \propto V_{\mathrm{R}}$ ... $\mathrm{C}_{\mathrm{J}} \alpha \mathrm{V}_{\mathrm{R}}^{-1 / 3}$
The depletion capacitance, $\mathrm{C}_{\mathrm{J}}$, of an abrupt $\mathrm{P}-\mathrm{N}$ junction with constant doping on either side varies with reverse bias, $V_{R^{\...
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1118
GATE ECE 1995 | Question 1.25
A change in the value of the emitter resistance, $\mathrm{R}_{\mathrm{e}^{\prime}}$ in a difference amplifier affects the difference mode gain $\mathrm{A}_{d}$ affects the common mode gain $\mathrm{A}_{c}$ affects both $\mathrm{A}_{d}$ and $\mathrm{A}_{c}$ does not affect either $\mathrm{A}_{d}$ and $\mathrm{A}_{c}$
A change in the value of the emitter resistance, $\mathrm{R}_{\mathrm{e}^{\prime}}$ in a difference amplifieraffects the difference mode gain $\mathrm{A}_{d}$affects the ...
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1119
GATE ECE 1995 | Question 1.26
The Ebers-Moll model is applicable to bipolar junction transistors $\text{NMOS}$ transistors unipolar junction transistors junction field-effect transistors
The Ebers-Moll model is applicable tobipolar junction transistors$\text{NMOS}$ transistorsunipolar junction transistorsjunction field-effect transistors
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1120
GATE ECE 1995 | Question 1.27
To obtain very high input and output impedances in a feedback amplifier, the topolomostly used is voltage-series current-series voltage-shunt current-shunt
To obtain very high input and output impedances in a feedback amplifier, the topolomostly used isvoltage-seriescurrent-seriesvoltage-shuntcurrent-shunt
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