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GATE ECE 2014 Set 4 | Question: 10
The cut-off wavelength (in $\mu m$) of light that can be used for intrinsic excitation of a semiconductor material of bandgap $E_g = 1.1 \: eV$ is ______________
The cut-off wavelength (in $\mu m$) of light that can be used for intrinsic excitation of a semiconductor material of bandgap $E_g = 1.1 \: eV$ is ______________
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124
GATE ECE 2015 Set 3 | Question: 55
A coaxial capacitor of inner radius $1\: mm$ and outer radius $5\: mm$ has a capacitance per unit length of $172\: pF/m.$ If the ratio of outer radius to inner radius is doubled, the capacitance per unit length $\text{(in}\: pF/m)$ is ________.
A coaxial capacitor of inner radius $1\: mm$ and outer radius $5\: mm$ has a capacitance per unit length of $172\: pF/m.$ If the ratio of outer radius to inner radius is ...
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127
GATE ECE 2014 Set 3 | Question: 10
At $T= 300 \: K$, the hole mobility of a semiconductor $\mu _{p}= 500$ $cm^{2}$/V-s$ and $\frac{kT}{q}= 26$ $mV$. The hole diffusion constant $D_{p}$ in $cm^{2}$/s$ is _________
At $T= 300 \: K$, the hole mobility of a semiconductor $\mu _{p}= 500$ $cm^{2}$$/V-s$ and $\frac{kT}{q}= 26$ $mV$. The hole diffusion constant $D_{p}$ in $cm^{2}$$/s$ is ...
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