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GATE ECE 2024 | Question: 12
​​​​For non-degenerately doped n-type silicon, which one of the following plots represents the temperature $(T)$ dependence of free electron concentration $(n)$ ?
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GATE ECE 1997 | Question 4.6
The intrinsic carrier density at $300 \mathrm{~K}$ is $1.5 \times 10^{10}$ / $\mathrm{cm}^{3}$, in silicon. For $n$-type silicon doped to $2.25 \times$ $10^{15}$ atoms $/...
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GATE ECE 1997 | Question 18
An $n$-type silicon bar is doped uniformly by phosphorous atoms to a concentration $4.5 \times 10^{13} / \mathrm{cc}$. The bar has cross-section of $1 \mathrm{~mm}^{2}$ a...
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GATE ECE 2003 | Question: 6
$n$-type silicon is obtained by doping silicon withGermaniumAluminiumBoronPhosphorus
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GATE ECE 2003 | Question: 38
An $n$-type silicon bar $0.1 \mathrm{~cm}$ long and $100 \; \mu \mathrm{m}^{2}$ in cross-sectional area has a majority carrier concentration of $5 \times 1020 / \mathrm{m...
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GATE ECE 1995 | Question 1.18
The drift velocity of electrons, in siliconis proportional to the electric field for all values of electric fieldis independent of the electric fieldincreases at low valu...
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GATE ECE 1995 | Question 1.21
In a $\text{P}$ type silicon sample, the hole concentration is $2.25 \times 10^{15} / \mathrm{cm}^{3}$. If the intrinsic carrier concentration is $1.5 \times 10^{10} / \m...
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GATE ECE 1994 | Question 3.4
A $p$-type silicon sample has a higher conductivity compared to an $n$-type sample having the same dopant concentration.
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GATE ECE 2008 | Question: 51
Silicon is doped with boron to a concentration of $4 \times 10^{17}$ atoms $/ \mathrm{cm}^{3}$. Assume the intrinsic carrier concentration of silicon to be $1.5 \times 10...
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GATE ECE 2009 | Question: 5
In an n-type silicon crystal at room temperature, which of the following can have a concentration of $4 \times 10^{19} \mathrm{~cm}^{-3}$ ?Silicon atomsHolesDopant atomsV...
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GATE ECE 2019 | Question: 8
Which one of the following options describes correctly the equilibrium band diagram at $T=300\:K$ of a Silicon $pnn^{+}\:\:p^{++}$ configuration shown in the figure?
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GATE ECE 2016 Set 2 | Question: 37
Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $N_{d}^{+}=10^{17} cm^{-3}.$ The electric field at $x = 0$ is $0\: V/cm$ and ...
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GATE ECE 2015 Set 1 | Question: 10
A silicon sample is uniformly doped with donor type impurities with a concentration of $10^{16} / cm^3$. The electron and hole mobilities in the sample are $1200 \: cm^2/...
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GATE ECE 2014 Set 3 | Question: 9
A thin $P$-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional tothe minority carrier...
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GATE ECE 2012 | Question: 26
The source of a silicon ($n_i=10^{10}\:per\:cm^3$) n-channel MOS transistor has an area of $1\:sq\:\mu m$ and a depth of $1\:\mu m$. If the dopant density in the source i...
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