Recent questions tagged silicon / GO Electronics

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GATE ECE 2024 | Question: 12
For non-degenerately doped n-type silicon, which one of the following plots represents the temperature $(T)$ dependence of free electron concentration $(n)$ ?

For non-degenerately doped n-type silicon, which one of the following plots represents the temperature $(T)$ dependence of free electron concentration $(n)$ ?...

admin

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admin asked Feb 16

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GATE ECE 2019 | Question: 8
Which one of the following options describes correctly the equilibrium band diagram at $T=300\:K$ of a Silicon $pnn^{+}\:\:p^{++}$ configuration shown in the figure?

Which one of the following options describes correctly the equilibrium band diagram at $T=300\:K$ of a Silicon $pnn^{+}\:\:p^{++}$ configuration shown in the figure?

Arjun

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Arjun asked Feb 12, 2019

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GATE ECE 2016 Set 2 | Question: 37
Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $N_{d}^{+}=10^{17} cm^{-3}.$ The electric field at $x = 0$ is $0\: V/cm$ and the electric field at $x=L$ is $50$ $kV/cm$ in the positive $x$ direction, ... $\epsilon _{r}=11.7$ for silicon, the value of $L$ in $nm$ is ___________

Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $N_{d}^{+}=10^{17} cm^{-3}.$ The electric field at $x = 0$ is $0\: V/cm$ and ...

Milicevic3306

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Milicevic3306 asked Mar 27, 2018

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GATE ECE 2015 Set 1 | Question: 10
A silicon sample is uniformly doped with donor type impurities with a concentration of $10^{16} / cm^3$. The electron and hole mobilities in the sample are $1200 \: cm^2/V-s$ and $400 \: cm^2/V-s$ respectively. Assume complete ionization of impurities. ... an electron is $1.6 \times 10^{-19} \:C$. The resistivity of the sample (in $\Omega - cm$) is ___________.

A silicon sample is uniformly doped with donor type impurities with a concentration of $10^{16} / cm^3$. The electron and hole mobilities in the sample are $1200 \: cm^2/...

Milicevic3306

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Milicevic3306 asked Mar 27, 2018

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GATE ECE 2014 Set 3 | Question: 9
A thin $P$-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to the minority carrier mobility the minority carrier recombination lifetime the majority carrier concentration the excess minority carrier concentration

A thin $P$-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional tothe minority carrier...

Milicevic3306

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Milicevic3306 asked Mar 26, 2018

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GATE ECE 2012 | Question: 26
The source of a silicon ($n_i=10^{10}\:per\:cm^3$) n-channel MOS transistor has an area of $1\:sq\:\mu m$ and a depth of $1\:\mu m$. If the dopant density in the source is $10^{19}/cm^3$, the number of holes in the source region with the above volume is approximately $10^7$ $100$ $10$ $0$

The source of a silicon ($n_i=10^{10}\:per\:cm^3$) n-channel MOS transistor has an area of $1\:sq\:\mu m$ and a depth of $1\:\mu m$. If the dopant density in the source i...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018