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1441
GATE ECE 2009 | Question: 55
The amplitude of a random signal is uniformly distributed between $-5 \mathrm{~V}$ and $5 \mathrm{~V}$. If the signal to quantization noise ratio required in uniformly quantizing the signal is $43.5 \mathrm{~dB}$, the step size of the quantization is approximately $0.0333 \mathrm{~V}$ $0.05 \mathrm{~V}$ $0.0667 \mathrm{~V}$ $0.10 \mathrm{~V}$
The amplitude of a random signal is uniformly distributed between $-5 \mathrm{~V}$ and $5 \mathrm{~V}$.If the signal to quantization noise ratio required in uniformly qua...
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1442
GATE ECE 2009 | Question: 56
The amplitude of a random signal is uniformly distributed between $-5 \mathrm{~V}$ and $5 \mathrm{~V}$. If the positive values of the signal are uniformly quantized with a step size of $0.05 \mathrm{~V}$, and the negative values are uniformly quantized with a step ... noise ratio is approximately $46 \mathrm{~dB}$ $43.8 \mathrm{~dB}$ $42 \mathrm{~dB}$ $40 \mathrm{~dB}$
The amplitude of a random signal is uniformly distributed between $-5 \mathrm{~V}$ and $5 \mathrm{~V}$.If the positive values of the signal are uniformly quantized with a...
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1443
GATE ECE 2009 | Question: 57
Consider the CMOS circuit shown, where the gate voltage $V_{G}$ of the $\text{n-MOSFET}$ is increased from zero, while the gate voltage of the $\text{p-MOSFET}$ is kept constant at $3 \mathrm{~V}$. Assume that, for both transistors, the magnitude ... $\text{p-MOSFET}$ is in saturation region $\text{n-MOSFET}$ is in saturation and $\text{p-MOSFET}$ is in triode region
Consider the CMOS circuit shown, where the gate voltage $V_{G}$ of the $\text{n-MOSFET}$ is increased from zero, while the gate voltage of the $\text{p-MOSFET}$ is kept c...
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1444
GATE ECE 2009 | Question: 58
Consider the CMOS circuit shown, where the gate voltage $V_{G}$ of the $\text{n-MOSFET}$ is increased from zero, while the gate voltage of the $\text{p-MOSFET}$ is kept constant at $3 \mathrm{~V}$ ... $4-\frac{\sqrt{3}}{2} \mathrm{~V}$ $4+\frac{\sqrt{3}}{2} \mathrm{~V}$
Consider the CMOS circuit shown, where the gate voltage $V_{G}$ of the $\text{n-MOSFET}$ is increased from zero, while the gate voltage of the $\text{p-MOSFET}$ is kept c...
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1445
GATE ECE 2009 | Question: 59
Two products are sold from a vending machine, which has two push buttons $P_{1}$ and $P_{2}$. When a button is pressed, the price of the corresponding product is displayed in a $7$-segment display. If no buttons are pressed, $'0'$ is displayed, signifying 'Rs. $0$ ... $g=\overline{P}_{1}+P_{2}, \quad e=b+c$ $g=P_{1}+P_{2}, \quad e=b+c$
Two products are sold from a vending machine, which has two push buttons $P_{1}$ and $P_{2}$. When a button is pressed, the price of the corresponding product is displaye...
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1446
GATE ECE 2009 | Question: 60
Two products are sold from a vending machine, which has two push buttons $P_{1}$ and $P_{2}$. When a button is pressed, the price of the corresponding product is displayed in a $7$-segment display. If no buttons are pressed, $'0'$ is displayed, signifying 'Rs. $0$'. ... display? $3$ NOT and $4$ OR $2$ NOT and $4$ OR $1$ NOT and $3$ OR $2$ NOT and $3$ OR
Two products are sold from a vending machine, which has two push buttons $P_{1}$ and $P_{2}$. When a button is pressed, the price of the corresponding product is displaye...
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1447
GATE ECE 2010 | Question: 2
The trigonometric Fourier series for the waveform $f(t)$ shown below contains only cosine terms and zero value for the $dc$ component only cosine terms and a positive value for the $dc$ component only cosine terms and a negative value for the $dc$ component only sine terms and a negative value for the $dc$ component
The trigonometric Fourier series for the waveform $f(t)$ shown below containsonly cosine terms and zero value for the $dc$ componentonly cosine terms and a positive value...
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1448
GATE ECE 2010 | Question: 4
For the two-port network shown below, the short-circuit admittance parameter matrix is $\left[\begin{array}{cc}4 & -2 \\ -2 & 4\end{array}\right] \mathrm{S}$ $\left[\begin{array}{cc}1 & -0.5 \\ -0.5 & 1\end{array}\right] \text{S}$ ... $\left[\begin{array}{ll}4 & 2 \\ 2 & 4\end{array}\right] \text{S}$
For the two-port network shown below, the short-circuit admittance parameter matrix is$\left[\begin{array}{cc}4 & -2 \\ -2 & 4\end{array}\right] \mathrm{S}$$\left[\begin{...
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1449
GATE ECE 2010 | Question: 5
For a parallel $\text{RLC}$ circuit, which one of the following statements is $\text{NOT}$ correct? The bandwidth of the circuit decreases if $\mathrm{R}$ is increased The bandwidth of the circuit remains same if $\mathrm{L}$ is increased At resonance, input impedance is a real quantity At resonance, the magnitude of input impedance attains its minimum value
For a parallel $\text{RLC}$ circuit, which one of the following statements is $\text{NOT}$ correct?The bandwidth of the circuit decreases if $\mathrm{R}$ is increasedThe ...
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1450
GATE ECE 2010 | Question: 6
At room temperature a possible value for the mobility of electrons in the inversion layer of a silicon $n$-channel MOSFET is $450 \text{ cm}^2 / \text{V-s}$ $1350 \text{ cm}^2 / \text{V-s}$ $1800 \text{ cm}^2 / \text{V-s}$ $3600 \text{ cm}^2 / \text{V-s}$
At room temperature a possible value for the mobility of electrons in the inversion layer of a silicon $n$-channel MOSFET is$450 \text{ cm}^2 / \text{V-s}$$1350 \text{ cm...
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1451
GATE ECE 2010 | Question: 7
Thin gate oxide in a $\text{CMOS}$ process is preferably grown using wet oxidation dry oxidation epitaxial deposition ion implantation
Thin gate oxide in a $\text{CMOS}$ process is preferably grown usingwet oxidationdry oxidationepitaxial depositionion implantation
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1452
GATE ECE 2010 | Question: 8
In the silicon $\text{BJT}$ circuit shown below, assume that the emitter area of transistor $\text{Q1}$ is half that of transistor $\text{Q2.}$ The value of current $\text{I}_0$ is approximately $0.5 \mathrm{~mA}$ $2 \mathrm{~mA}$ $9.3 \mathrm{~mA}$ $15 \mathrm{~mA}$
In the silicon $\text{BJT}$ circuit shown below, assume that the emitter area of transistor $\text{Q1}$ is half that of transistor $\text{Q2.}$The value of current $\text...
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1453
GATE ECE 2010 | Question: 9
The amplifier circuit shown below uses a silicon transistor. The capacitors $\mathrm{C}_{\mathrm{C}}$ and $\mathrm{C}_{\mathrm{E}}$ can be assumed to be short at signal frequency and the effect of output resistance $r_\text{o}$ ... $\text{R}_\text{i}$ and the magnitude of voltage gain $\text{A}_\text{v}$ increase
The amplifier circuit shown below uses a silicon transistor. The capacitors $\mathrm{C}_{\mathrm{C}}$ and $\mathrm{C}_{\mathrm{E}}$ can be assumed to be short at signal f...
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1454
GATE ECE 2010 | Question: 10
Assuming the $\text{OP-AMP}$ to be ideal. the voltage gain of the amplifier shown below is $-\frac{\mathrm{R}_2}{\mathrm{R}_1}$ $-\frac{\mathrm{R}_3}{\mathrm{R}_1}$ $-\left(\frac{\mathrm{R}_2 \| \mathrm{R}_3}{\mathrm{R}_1}\right)$ $-\left(\frac{\mathrm{R}_2+\mathrm{R}_3}{\mathrm{R}_1}\right)$
Assuming the $\text{OP-AMP}$ to be ideal. the voltage gain of the amplifier shown below is$-\frac{\mathrm{R}_2}{\mathrm{R}_1}$$-\frac{\mathrm{R}_3}{\mathrm{R}_1}$$-\left(...
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1455
GATE ECE 2010 | Question: 13
In the circuit shown, the device connected to $\text{Y5}$ can have address in the range $2000 – \mathrm{20FF}$ $\mathrm{2D00} – \mathrm{2DEF}$ $\mathrm{2E00} – \mathrm{2EFF}$ $\text{FD00 - FDFF}$
In the circuit shown, the device connected to $\text{Y5}$ can have address in the range$2000 – \mathrm{20FF}$$\mathrm{2D00} – \mathrm{2DEF}$$\mathrm{2E00} – \mathr...
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1456
GATE ECE 2010 | Question: 14
Consider the $z$-transform $X(z)=5 z^2+4 z^{-1}+3 ; 0<|z|<\infty$. The inverse $z$-transform $x[n]$ is $5\; \delta[n+2]+3\; \delta[n]+4\; \delta[n-1]$ $5\; \delta[n-2]+3\; \delta[n]+4\; \delta[n+1]$ $5\; u[n+2]+3\; u[n]+4\; u[n-1]$ $5\; u[n-2]+3\; u[n]+4\; u[n+1]$
Consider the $z$-transform $X(z)=5 z^2+4 z^{-1}+3 ; 0<|z|<\infty$. The inverse $z$-transform $x[n]$ is$5\; \delta[n+2]+3\; \delta[n]+4\; \delta[n-1]$$5\; \delta[n-2]+3\; ...
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1457
GATE ECE 2010 | Question: 15
Two discrete time systems with impulse responses $h_t[n]=\delta[n-1]$ and $h_2[n]=\delta[n-2]$ are connected in cascade. The overall impulse response of the cascaded system is $\delta[n-1]+ \delta[n-2]$ $\delta[n-4]$ $\delta[n-3]$ $\delta[n-1] \delta[n-2]$
Two discrete time systems with impulse responses $h_t[n]=\delta[n-1]$ and $h_2[n]=\delta[n-2]$ are connected in cascade. The overall impulse response of the cascaded syst...
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1458
GATE ECE 2010 | Question: 16
For an $\mathrm{N}$-point $\mathrm{FFT}$ algorithm with $\mathrm{N}=2^{\text {m}}$, which one of the following statements is $\text{TRUE}?$ It is not possible to construct a signal flow graph with both input and output in ... $2 \mathrm{N}$ node data Computation of a butterfly requires only one complex multiplication
For an $\mathrm{N}$-point $\mathrm{FFT}$ algorithm with $\mathrm{N}=2^{\text {m}}$, which one of the following statements is $\text{TRUE}?$It is not possible to construct...
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1459
GATE ECE 2010 | Question: 17
The transfer function $\text{Y(s) / R(s)}$ of the system shown is $0$ $\frac{1}{\text{s}+1}$ $\frac{2}{\text{s}+1}$ $\frac{2}{\text{s}+3}$
The transfer function $\text{Y(s) / R(s)}$ of the system shown is$0$$\frac{1}{\text{s}+1}$$\frac{2}{\text{s}+1}$$\frac{2}{\text{s}+3}$
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1460
GATE ECE 2010 | Question: 18
A system with the transfer function $\frac{Y(s)}{X(s)}=\frac{s}{s+p}$ has an output $y(t)=\cos \left(2 t-\frac{\pi}{3}\right)$ for the input signal $x(t)=p \cos \left(2 t-\frac{\pi}{2}\right)$. Then, the system parameter $’p’$ is $\sqrt{3}$ $\frac{2}{\sqrt{3}}$ $1$ $\frac{\sqrt{3}}{2}$
A system with the transfer function $\frac{Y(s)}{X(s)}=\frac{s}{s+p}$ has an output $y(t)=\cos \left(2 t-\frac{\pi}{3}\right)$ for the input signal $x(t)=p \cos \left(2 t...
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1461
GATE ECE 2010 | Question: 19
For the asymptotic Bode magnitude plot shown below, the system transfer function can be $\frac{10 \text{s}+1}{0.1 \text{s}+1}$ $\frac{100 \text{s}+1}{0.1 \text{s}+1}$ $\frac{100 \mathrm{s}}{10 \mathrm{s}+1}$ $\frac{0.1 \text{s}+1}{10 \text{s}+1}$
For the asymptotic Bode magnitude plot shown below, the system transfer function can be$\frac{10 \text{s}+1}{0.1 \text{s}+1}$$\frac{100 \text{s}+1}{0.1 \text{s}+1}$$\frac...
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1462
GATE ECE 2010 | Question: 20
Suppose that the modulating signal is $m(t)=2 \cos \left(2 \pi f_{m} t\right)$ and the carrier signal is $x_{c}(t)=A_{C} \cos \left(2 \pi f_{c}t\right)$. Which one of the following is a conventional $\text{AM}$ ...
Suppose that the modulating signal is $m(t)=2 \cos \left(2 \pi f_{m} t\right)$ and the carrier signal is $x_{c}(t)=A_{C} \cos \left(2 \pi f_{c}t\right)$. Which one of the...
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1463
GATE ECE 2010 | Question: 21
Consider an angle modulated signal $x(t)=6 \cos \left[2 \pi \times 10^{6} t+2 \sin (8000 \pi t)+4 \cos (8000 \pi t)\right] \mathrm{V}$. The average power of $x(t)$ is $10 \mathrm{~W}$ $18 \mathrm{~W}$ $20 \mathrm{~W}$ $28 \mathrm{~W}$
Consider an angle modulated signal $x(t)=6 \cos \left[2 \pi \times 10^{6} t+2 \sin (8000 \pi t)+4 \cos (8000 \pi t)\right] \mathrm{V}$. The average power of $x(t)$ is$10 ...
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1464
GATE ECE 2010 | Question: 22
If the scattering matrix $[\text{S}]$ of a two port network is \[ [\text{S}]=\left[\begin{array}{cc} 0.2 \angle 0^{\circ} & 0.9 \angle 90^{\circ} \\ 0.9 \angle 90^{\circ} & 0.1 \angle 90^{\circ} \end{array}\right] \] then the network is lossless and reciprocal lossless but not reciprocal not lossless but reciprocal neither lossless nor reciprocal
If the scattering matrix $[\text{S}]$ of a two port network is\[ [\text{S}]=\left[\begin{array}{cc}0.2 \angle 0^{\circ} & 0.9 \angle 90^{\circ} \\0.9 \angle 90^{\circ} & ...
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1465
GATE ECE 2010 | Question: 23
A transmission line has a characteristic impedance of $50 \; \Omega$ and a resistance of $0.1 \; \Omega / \mathrm{m}$. If the line is distortionless, the attenuation constant (in $\mathrm{Np/m})$ is $500$ $5$ $0.014$ $0.002$
A transmission line has a characteristic impedance of $50 \; \Omega$ and a resistance of $0.1 \; \Omega / \mathrm{m}$. If the line is distortionless, the attenuation cons...
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1466
GATE ECE 2010 | Question: 24
Consider the pulse shape $s(t)$ as shown. The impulse response $h(t)$ of the filter matched to this pulse is
Consider the pulse shape $s(t)$ as shown. The impulse response $h(t)$ of the filter matched to this pulse is
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1467
GATE ECE 2010 | Question: 25
The electric field component of a time harmonic plane $\text{EM}$ wave traveling in a nonmagnetic lossless dielectric medium has an amplitude of $1 \; \mathrm{V/m}$. If the relative permittivity of the medium is $4$ ... is $\frac{1}{30 \pi}$ $\frac{1}{60 \pi}$ $\frac{1}{120 \pi}$ $\frac{1}{240 \pi}$
The electric field component of a time harmonic plane $\text{EM}$ wave traveling in a nonmagnetic lossless dielectric medium has an amplitude of $1 \; \mathrm{V/m}$. If t...
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1468
GATE ECE 2010 | Question: 28
If $\vec{A}=x y \hat{a}_{x}+x^{2} \hat{a}_{y}$, then $\oint_{c} \vec{A} \cdot d \vec{l}$ over the path shown in the figure is $0$ $\frac{2}{\sqrt{3}}$ $1$ $2 \sqrt{3}$
If $\vec{A}=x y \hat{a}_{x}+x^{2} \hat{a}_{y}$, then $\oint_{c} \vec{A} \cdot d \vec{l}$ over the path shown in the figure is$0$$\frac{2}{\sqrt{3}}$$1$$2 \sqrt{3}$
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1469
GATE ECE 2010 | Question: 29
The residues of a complex function $X(z)=\dfrac{1-2 z}{z(z-1)(z-2)}$ at its poles are $\frac{1}{2},-\frac{1}{2}$ and $1$ $\frac{1}{2}, \frac{1}{2}$ and $-1$ $\frac{1}{2}, 1$ and $-\frac{3}{2}$ $\frac{1}{2},-1$ and $\frac{3}{2}$
The residues of a complex function $X(z)=\dfrac{1-2 z}{z(z-1)(z-2)}$ at its poles are$\frac{1}{2},-\frac{1}{2}$ and $1$$\frac{1}{2}, \frac{1}{2}$ and $-1$$\frac{1}{2}, 1$...
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1470
GATE ECE 2010 | Question: 31
Given $f(t)=\mathscr{L}^{-1}\left[\dfrac{3 s+1}{s^{3}+4 s^{2}+(K-3) s}\right]$. If $\displaystyle{}\lim _{t \rightarrow \infty} f(t)=1$, then the value of $K$ is $1$ $2$ $3$ $4$
Given $f(t)=\mathscr{L}^{-1}\left[\dfrac{3 s+1}{s^{3}+4 s^{2}+(K-3) s}\right]$. If $\displaystyle{}\lim _{t \rightarrow \infty} f(t)=1$, then the value of $K$ is$1$$2$$3$...
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1471
GATE ECE 2010 | Question: 32
In the circuit shown, the switch $S$ is open for a long time and is closed at $t=0$. The current $i(t)$ for $t \geq 0$ is $i(t)=0.5-0.125 e^{-1000t} \mathrm{~A}$ $i(t)=1.5-0.125 e^{-1000t} \mathrm{~A}$ $i(t)=0.5-0.5 e^{-1000t} \mathrm{~A}$ $i(t)=0.375 e^{- 1000t} \mathrm{~A}$
In the circuit shown, the switch $S$ is open for a long time and is closed at $t=0$. The current $i(t)$ for $t \geq 0$ is $i(t)=0.5-0.125 e^{-1000t} \mathrm{~A}$$i(t)=1.5...
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1472
GATE ECE 2010 | Question: 33
The current $\mathrm{I}$ in the circuit shown is $\text{-j1 A}$ $\text{j1 A}$ $0 \mathrm{~A}$ $20 \mathrm{~A}$
The current $\mathrm{I}$ in the circuit shown is $\text{-j1 A}$$\text{j1 A}$$0 \mathrm{~A}$$20 \mathrm{~A}$
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1473
GATE ECE 2010 | Question: 34
In the circuit shown, the power supplied by the voltage source is $0 \mathrm{~W}$ $5 \mathrm{~W}$ $10 \mathrm{~W}$ $100 \mathrm{~W}$
In the circuit shown, the power supplied by the voltage source is$0 \mathrm{~W}$$5 \mathrm{~W}$$10 \mathrm{~W}$$100 \mathrm{~W}$
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1474
GATE ECE 2010 | Question: 35
In a uniformly doped $\text{BJT}$, assume that $\text{N}_\text{E}, \text{N}_\text{H}$ and $\text{N}_\text{C}$ are the emitter, base and collector dopings in $\text{atoms/cm}^{3}$, respectively. If the emitter injection efficiency of the $\text{BJT}$ is close ... $\mathrm{N}_{\mathrm{E}}<\mathrm{N}_{\mathrm{B}}<\mathrm{N}_{\mathrm{C}}$
In a uniformly doped $\text{BJT}$, assume that $\text{N}_\text{E}, \text{N}_\text{H}$ and $\text{N}_\text{C}$ are the emitter, base and collector dopings in $\text{atoms/...
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1475
GATE ECE 2010 | Question: 36
Compared to a $\text{p-n}$ junction with $\mathrm{N}_{\mathrm{A}}=\mathrm{N}_{\mathrm{D}}=10^{14} / \mathrm{cm}^{3}$, which one of the following statements is $\text{TRUE}$ ... and depletion capacitance is lower Reverse breakdown voltage is lower and depletion capacitance is higher Reverse breakdown voltage is higher and depletion capacitance is higher
Compared to a $\text{p-n}$ junction with $\mathrm{N}_{\mathrm{A}}=\mathrm{N}_{\mathrm{D}}=10^{14} / \mathrm{cm}^{3}$, which one of the following statements is $\text{TRUE...
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1476
GATE ECE 2010 | Question: 38
The transfer characteristic for the precision rectifier circuit shown below is (assume ideal $\text{OP-AMP}$ and practical diodes)
The transfer characteristic for the precision rectifier circuit shown below is (assume ideal $\text{OP-AMP}$ and practical diodes)
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GATE ECE 2010 | Question: 40
For the $8085$ ... $\text{00H}$ $45 \text{H}$ $\text{67H}$ $\text{E7H}$
For the $8085$ assembly language program given below, the content of the accumulator after the execution of the program is$$\begin{array}{|lll|}\hline 3000 & \text{MVI} &...
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1478
GATE ECE 2010 | Question: 41
A continuous time $\text{LTI}$ system is described by \[ \frac{d^{2} y(t)}{d t^{2}}+4 \frac{d y(t)}{d t}+3 y(t)=2 \frac{d x(t)}{d t}+4 x(t) \] Assuming zero initial conditions, the response $y(t)$ of the above system for the input $x(t)=e^{-2 t} u(t)$ is given by ... $\left(e^{-t}+e^{-3t}\right) u(t)$ $\left(e^{t}+e^{3 t}\right) u(t)$
A continuous time $\text{LTI}$ system is described by\[ \frac{d^{2} y(t)}{d t^{2}}+4 \frac{d y(t)}{d t}+3 y(t)=2 \frac{d x(t)}{d t}+4 x(t) \]Assuming zero initial conditi...
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GATE ECE 2010 | Question: 42
The transfer function of a discrete time $\text{LTI}$ system is given by $H(z)=\frac{2-\frac{3}{4} z^{-1}}{1-\frac{3}{4} z^{-1}+\frac{1}{8} z^{-2}}$ Consider the following statements: $\text{S1:}$ ... $\mathrm{S} 3$ are true Both $\text{S1}$ and $\text{S3}$ are true $\text{S1, S2}$ and $\text{S3}$ are all true
The transfer function of a discrete time $\text{LTI}$ system is given by$$H(z)=\frac{2-\frac{3}{4} z^{-1}}{1-\frac{3}{4} z^{-1}+\frac{1}{8} z^{-2}}$$Consider the followin...
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GATE ECE 2010 | Question: 43
The Nyquist sampling rale for the signal $s(t)=\dfrac{\sin (500 \pi t)}{\pi t} \times \dfrac{\sin (700 \pi t)}{\pi t}$ is given by $400 \mathrm{~Hz}$ $600 \mathrm{~Hz}$ $1200 \mathrm{~Hz}$ $1400 \mathrm{~Hz}$
The Nyquist sampling rale for the signal $s(t)=\dfrac{\sin (500 \pi t)}{\pi t} \times \dfrac{\sin (700 \pi t)}{\pi t}$ is given by$400 \mathrm{~Hz}$$600 \mathrm{~Hz}$$120...
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