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GATE ECE 2010 | Question-6

At room temperature a possible value for the mobility of electrons in the inversion layer of a silicon $n$-channel MOSFET is

  1. $450 \mathrm{~cm}^2 / \mathrm{V-s}$
  2. $1350 \mathrm{~cm}^2 / \mathrm{V-s}$
  3. $1800 \mathrm{~cm}^2 / \mathrm{V-s}$
  4. $3600 \mathrm{~cm}^2 / \mathrm{V-s}$
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