1 1 vote At room temperature a possible value for the mobility of electrons in the inversion layer of a silicon $n$-channel MOSFET is $450 \text{ cm}^2 / \text{V-s}$ $1350 \text{ cm}^2 / \text{V-s}$ $1800 \text{ cm}^2 / \text{V-s}$ $3600 \text{ cm}^2 / \text{V-s}$ Carrier Transport gate2010-ec mosfet carrier-transport semiconductor + – admin 219 views answer comment Share Follow Add Sync Questions Print 0 reply Please log in or register to add a comment.
