At room temperature a possible value for the mobility of electrons in the inversion layer of a silicon $n$-channel MOSFET is
- $450 \text{ cm}^2 / \text{V-s}$
- $1350 \text{ cm}^2 / \text{V-s}$
- $1800 \text{ cm}^2 / \text{V-s}$
- $3600 \text{ cm}^2 / \text{V-s}$