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Recent questions tagged diffusion-current
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GATE ECE 2024 | Question: 16
The free electron concentration profile $n(x)$ in a doped semiconductor at equilibrium is shown in the figure, where the points $\mathrm{A}, \mathrm{B}$, and $\mathrm{...
admin
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Feb 16, 2024
Carrier Transport
gateece-2024
semiconductor
diffusion-current
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324
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GATE ECE 2014 Set 3 | Question: 10
At $T= 300 \: K$, the hole mobility of a semiconductor $\mu _{p}= 500$ $cm^{2}$$/V-s$ and $\frac{kT}{q}= 26$ $mV$. The hole diffusion constant $D_{p}$ in $cm^{2}$$/s$ is ...
Milicevic3306
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asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
numerical-answers
electronic-devices
diffusion-current
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583
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GATE ECE 2018 | Question: 7
In a $\text{p-n}$ junction diode at equilibrium, which one of the following statements is NOT TRUE?The hole and electron diffusion current components are in the same dire...
gatecse
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asked
Feb 19, 2018
Electronic Devices
gate2018-ec
electronic-devices
diffusion-current
p-n-junction
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