Recent questions tagged semiconductor

Consider an LED based on a direct bandgap semiconductor material with energy bandgap $1.3$ eV.Given: Plank's constant, $h=6.63 \times 10^{-34} \mathrm{~J} \mathrm{~s}$ an...

The intrinsic carrier concentration of a semiconductor is $2.5 \times 10^{16} / \mathrm{m}^{3}$ at $300 \: \mathrm{K}$.If the electron and hole mobilities are $0.15 \math...

The electron mobility $\mu_{\mathrm{n}}$ in a non-degenerate germanium semiconductor at $300 \: \mathrm{K}$ is $0.38 \mathrm{~m}^{2} / \mathrm{Vs}$.The electron diffusivi...

​​​​For non-degenerately doped n-type silicon, which one of the following plots represents the temperature $(T)$ dependence of free electron concentration $(n)$ ?

​​​The free electron concentration profile $n(x)$ in a doped semiconductor at equilibrium is shown in the figure, where the points $\mathrm{A}, \mathrm{B}$, and $\mathrm{...

A non-degenerate n-type semiconductor has $5 \%$ neutral dopant atoms. Its Fermi level is located at $0.25 \mathrm{eV}$ below the conduction band $\left(E_{C}\right)$ and...

In a semiconductor, if the Fermi energy level lies in the conduction band, then the semiconductor is known asdegenerate $\text{n}$-type.degenerate $\text{p}$-type.non-deg...

For an intrinsic semiconductor at temperature $\text{T}=0 \; \text{K}$, which of the following statement is true?All energy states in the valence band are filled with ele...

For a $\text{MOS}$ capacitor, $\text{V}_{\mathrm{fb}}$ and $\text{V}_{\mathrm{t}}$ are the flat-band voltage and the threshold voltage, respectively. The variation of the...

In a semiconductor device, the Fermi-energy level is $0.35 \; \mathrm{eV}$ above the valence band energy. The effective density of states in the valence band at $T=300 \m...

For a $\text{MOS}$ capacitor fabricated on a $p$-type semiconductor, strong inversion occurs whensurface potential is equal to Fermi potentialsurface potential is zerosur...

Each cell of a Static Random Access Memory contains$6 \; \text{MOS}$ transistors$4 \; \mathrm{MOS}$ transistors and $2$ capacitors$2 \; \text{MOS}$ transistors and $4$ ca...

(1) An $8$-bit wide $5$ word sequential memory will have$8$ Fixed $\text{‘AND'}$ gates and $4$ programmable $\text{‘OR'}$ gates(2) A $256 \times 4$ $\text{EFROM}$ hasEigh...

An $n$-type silicon bar is doped uniformly by phosphorous atoms to a concentration $4.5 \times 10^{13} / \mathrm{cc}$. The bar has cross-section of $1 \mathrm{~mm}^{2}$ a...

If $\text{CS}=\text{A}_{15} \; \text{ A}_{14} \; \text{A}_{13}$ is used as the chip select logic of a $4 \; \text{K RAM}$ in an $8085$ system, then its memory range will ...

In the $\text{DRAM}$ cell in the figure is the $V_{t}$ of the $\text{NMOSFET}$ is $1 \mathrm{~V}$. For the following three combinations of $\mathrm{WL}$ and $\mathrm{BL}$...

The electron and hole concentrations in a intrinsic semiconductor are $n_i$ and $p_i$ respectively. When doped with a $p$-type material, these change to $n$ and $p$, resp...

A long specimen of $p$-type semiconductor materialis positively chargedis electrically neutralhas an electric field directed along its lengthacts as a dipole

$n$-type silicon is obtained by doping silicon withGermaniumAluminiumBoronPhosphorus

The intrinsic carrier concentration of silicon sample at $300 \mathrm{~K}$ is $1.5 \times 10^{16} / \mathrm{m}^3$. If after doping, the number of majority carriers is $5 ...

The electron concentration in a sample of uniformly doped $n$-type silicon at $300 \mathrm{~K}$ varies linearly from $10^{17} / \mathrm{cm}^{3}$ at $x=0$ to $6 \times 10^...

Match items in Group $1$ with items in Group $2,$ most suitably.$$\begin{array}{ll} \textbf{Group 1} & \textbf{Group 2} \\ \text{P LED} & \text{1 Heavy doping} \\ \text{Q...

At $300 \mathrm{~K}$, for a diode current of $1 \mathrm{~mA}$, a certain germanium diode requires a forward bias of $0.1435 \mathrm{~V}$, whereas a certain silicon diode ...

If $\mathrm{P}$ is Passivation, $\mathrm{Q}$ is $n$-well implant, $\mathrm{R}$ is metallization and $S$ is source/drain diffusion, then the order in which they are carrie...

In the circuit shown in the figure $\mathrm{A}$ is a parallel-in, parallel-out $4$ bit register, which loads at the rising edge of the clock $C$. The input lines are conn...

The impurity commonly used for realizing the base region of a silicon $n-p-n$ transistor isGalliumIndiumBoronPhosphorus

The resistivity of a uniformloy doped $n$-type silicon sample is $0.5 \; \Omega-\mathrm{cm}$. If the electron mobility $\left(\mu_{n}\right)$ is $1250 \mathrm{~cm}^{2} / ...