Recent questions and answers in Carrier Transport

Consider that the concentration of electrons in a semiconductor bar varies linearly from $2 \times 10^{17} \mathrm{~cm}^{-3}$ at $x=1 \mu \mathrm{~m}$ to $1 \times 10^{16...

The intrinsic carrier concentration of a semiconductor is $2.5 \times 10^{16} / \mathrm{m}^{3}$ at $300 \: \mathrm{K}$.If the electron and hole mobilities are $0.15 \math...

The electron mobility $\mu_{\mathrm{n}}$ in a non-degenerate germanium semiconductor at $300 \: \mathrm{K}$ is $0.38 \mathrm{~m}^{2} / \mathrm{Vs}$.The electron diffusivi...

​​​​For non-degenerately doped n-type silicon, which one of the following plots represents the temperature $(T)$ dependence of free electron concentration $(n)$ ?

​​​The free electron concentration profile $n(x)$ in a doped semiconductor at equilibrium is shown in the figure, where the points $\mathrm{A}, \mathrm{B}$, and $\mathrm{...

In a semiconductor, if the Fermi energy level lies in the conduction band, then the semiconductor is known asdegenerate $\text{n}$-type.degenerate $\text{p}$-type.non-deg...

For an intrinsic semiconductor at temperature $\text{T}=0 \; \text{K}$, which of the following statement is true?All energy states in the valence band are filled with ele...

For a $\text{MOS}$ capacitor, $\text{V}_{\mathrm{fb}}$ and $\text{V}_{\mathrm{t}}$ are the flat-band voltage and the threshold voltage, respectively. The variation of the...

In a semiconductor device, the Fermi-energy level is $0.35 \; \mathrm{eV}$ above the valence band energy. The effective density of states in the valence band at $T=300 \m...

An $n$-type silicon bar is doped uniformly by phosphorous atoms to a concentration $4.5 \times 10^{13} / \mathrm{cc}$. The bar has cross-section of $1 \mathrm{~mm}^{2}$ a...

The electron and hole concentrations in a intrinsic semiconductor are $n_i$ and $p_i$ respectively. When doped with a $p$-type material, these change to $n$ and $p$, resp...

A long specimen of $p$-type semiconductor materialis positively chargedis electrically neutralhas an electric field directed along its lengthacts as a dipole

$n$-type silicon is obtained by doping silicon withGermaniumAluminiumBoronPhosphorus

The bandgap of silicon at $300 \mathrm{~K}$ is$1.36 \; \mathrm{eV}$$1.10 \; \mathrm{eV}$$0.80 \; \mathrm{eV}$$0.67 \; \mathrm{eV}$

The intrinsic carrier concentration of silicon sample at $300 \mathrm{~K}$ is $1.5 \times 10^{16} / \mathrm{m}^3$. If after doping, the number of majority carriers is $5 ...

An $n$-type silicon bar $0.1 \mathrm{~cm}$ long and $100 \; \mu \mathrm{m}^{2}$ in cross-sectional area has a majority carrier concentration of $5 \times 1020 / \mathrm{m...

The electron concentration in a sample of uniformly doped $n$-type silicon at $300 \mathrm{~K}$ varies linearly from $10^{17} / \mathrm{cm}^{3}$ at $x=0$ to $6 \times 10^...

The resistivity of a uniformloy doped $n$-type silicon sample is $0.5 \; \Omega-\mathrm{cm}$. If the electron mobility $\left(\mu_{n}\right)$ is $1250 \mathrm{~cm}^{2} / ...

Consider an abrupt $p$-junction. Let $V_{\text {in }}$ be the built-in potential of this junction and $\mathrm{V}_{\mathrm{R}}$ be the applied reverse bias. If the juncti...

The primary reason for the widespread use of Silicon in semiconductor device technology isaboundance of Silicon on the surface of the Earth.larger bandgap of Silicon in c...

A Silicon sample $\mathrm{A}$ is doped with $10^{18}$ atoms $/ \mathrm{cm}^{3}$ of Boron. Another sample $\mathrm{B}$ of identical dimensions is doped with $10^{18}$ atom...

The drift velocity of electrons, in siliconis proportional to the electric field for all values of electric fieldis independent of the electric fieldincreases at low valu...

The diffusion potential across a $\text{P-N}$ junctiondecreases with increasing doping concentrationincreases with decreasing band gapdoes not depend on doping concentrat...

In a $\text{P}$ type silicon sample, the hole concentration is $2.25 \times 10^{15} / \mathrm{cm}^{3}$. If the intrinsic carrier concentration is $1.5 \times 10^{10} / \m...

The depletion capacitance, $\mathrm{C}_{\mathrm{J}}$, of an abrupt $\mathrm{P}-\mathrm{N}$ junction with constant doping on either side varies with reverse bias, $V_{R^{\...

Copper behaves as aconductor alwaysconductor or dielectric depending on the applied electric field strengthconductor or dielectric depending on the frequencyconductor or ...