Recent questions tagged mos-capacitor / GO Electronics

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GATE ECE 2024 | Question: 22
In the circuit given below, the switch $\text{S}$ was kept open for a sufficiently long time and is closed at time $t=0$. The time constant (in seconds) of the circuit for $t>0$ is $\_\_\_\_\_\_$.

In the circuit given below, the switch $\text{S}$ was kept open for a sufficiently long time and is closed at time $t=0$. The time constant (in seconds) of the circuit fo...

admin

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admin asked Feb 16

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GATE ECE 2019 | Question: 10
The figure shows the high-frequency C-V curve of a MOS capacitor $(\text{at}\: T=300\: K)$ with $\Phi_{ms}= 0\: V$ and no oxide charges. The flat-band, inversion, and accumulation conditions are represented, respectively, by the points $P,Q,R$ $Q,R,P$ $R,P,Q$ $Q,P,R$

The figure shows the high-frequency C-V curve of a MOS capacitor $(\text{at}\: T=300\: K)$ with $\Phi_{ms}= 0\: V$ and no oxide charges. The flat-band, inversion, and acc...

Arjun

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Arjun asked Feb 12, 2019

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GATE ECE 2016 Set 3 | Question: 38
Figures I and II show two MOS capacitors of unit area. The capacitor in Figure I has insulator materials $X$ (of thickness $t_1 = 1$ nm and dielectric constant $\varepsilon_1=4$) and $Y$ (of thickness $t_2 = 3$ ... of thickness $t_{Eq}$. If the capacitors are of equal capacitance, then the value of $t_{Eq}$ (in nm) is _________

Figures I and II show two MOS capacitors of unit area. The capacitor in Figure I has insulator materials $X$ (of thickness $t_1 = 1$ nm and dielectric constant $\varepsil...

Milicevic3306

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Milicevic3306 asked Mar 27, 2018

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GATE ECE 2016 Set 2 | Question: 35
A voltage $V_{G}$ is applied across a $MOS$ capacitor with metal gate and $p$-type silicon substrate at $T=300$ $K$. The inversion carrier density (in number of carriers per unit area) for $V_{G}= 0.8$ $V$ is $2\times 10^{11} cm^{-2}.$ For $V_{G}= 1.3$ $V$, the ... $6.0\times 10^{11}cm^{-2}$ $7.2\times 10^{11}cm^{-2}$ $8.4\times 10^{11}cm^{-2}$

A voltage $V_{G}$ is applied across a $MOS$ capacitor with metal gate and $p$-type silicon substrate at $T=300$ $K$. The inversion carrier density (in number of carriers ...

Milicevic3306

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Milicevic3306 asked Mar 27, 2018

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GATE ECE 2015 Set 2 | Question: 34
In a MOS capacitor with an oxide layer thickness of $10\: nm,$ the maximum depletion layer thickness is $100\: nm.$ The permittivities of the semiconductor and the oxide layer are $\varepsilon_{s}$ and $\varepsilon_{ox}$ respectively. ... the ratio of the maximum capacitance to the minimum capacitance of this MOS capacitor is ________.

In a MOS capacitor with an oxide layer thickness of $10\: nm,$ the maximum depletion layer thickness is $100\: nm.$ The permittivities of the semiconductor and the oxide ...

Milicevic3306

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Milicevic3306 asked Mar 27, 2018

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GATE ECE 2014 Set 3 | Question: 36
An ideal MOS capacitor has boron doping-concentration of $10^{15}cm^{-3}$ in the substrate. When a gate voltage is applied, a depletion region of width $0.5$ $\mu m$ is formed with a surface (channel) potential of $0.2$ $V$. Given that ... silicon dioxide are $12$ and $4$, respectively, the peak electric field (in $V/\mu m$) in the oxide region is _______________.

An ideal MOS capacitor has boron doping-concentration of $10^{15}cm^{-3}$ in the substrate. When a gate voltage is applied, a depletion region of width $0.5$ $\mu m$ is f...

Milicevic3306

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Milicevic3306 asked Mar 26, 2018

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GATE ECE 2017 Set 2 | Question: 36
A MOS capacitor is fabricated on $p$-type Si (Silicon) where the metal work function is $4.1$ eV and electron affinity of Si is $4.0$ eV. $E_C-E_F=0.9$ eV, where $E_C$ and $E_F$ are the conduction band minimum and the Fermi energy ... capacitor is $-1$ V, then the magnitude of the fixed charge at the oxide-semiconductor interface, in $nC/cm^2$, is ___________.

A MOS capacitor is fabricated on $p$-type Si (Silicon) where the metal work function is $4.1$ eV and electron affinity of Si is $4.0$ eV. $E_C-E_F=0.9$ eV, where $E_C$ an...

admin

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admin asked Nov 25, 2017