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Recent questions tagged mos-capacitor

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GATE ECE 2024 | Question: 22
In the circuit given below, the switch $\text{S}$ was kept open for a sufficiently long time and is closed at time $t=0$. The time constant (in seconds) of the circuit fo...
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GATE ECE 2024 | Question: 51
Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of $100 \mathrm{~nm}$, a fixed positive oxide charge of $10^{-8} \mathrm{C} / \mathrm{cm}^{2}...
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GATE ECE 2023 | Question: 9
For a $\text{MOS}$ capacitor, $\text{V}_{\mathrm{fb}}$ and $\text{V}_{\mathrm{t}}$ are the flat-band voltage and the threshold voltage, respectively. The variation of the...
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GATE ECE 1997 | Question 2.3
For a $\text{MOS}$ capacitor fabricated on a $p$-type semiconductor, strong inversion occurs whensurface potential is equal to Fermi potentialsurface potential is zerosur...
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GATE ECE 2004 | Question: 41
Consider the following statements $\mathrm{S} 1$ and $\mathrm{S} 2$.$\mathrm{S} 1 :$ The threshold voltage $\left(V_{T}\right)$ of a MOS capacitor decreases with increase...
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GATE ECE 2005 | Question: 69
A $\text{MOS}$ capacitor made using $p$ type substrate is in the accumulation mode. The dominant charge in the channel is due to the presence ofholeselectronspositively c...
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GATE ECE 2007 | Question: 35
Group I lists four different semiconductor devices. Match each device in Group I with its characteristic property in Group II.$$\begin{array}{ll} \textbf{Group I} & \qqua...
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GATE ECE 2007 | Question: 71
The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a $\mathrm{Metal} / \mathrm{SiO}_{2} / \text{silicon (MOS)}$ capacitor having an area of ...
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GATE ECE 2007 | Question: 72
The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a $\mathrm{Metal} / \mathrm{SiO}_{2} / \text{silicon (MOS)}$ capacitor having an area of ...
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GATE ECE 2022 | Question: 24
An ideal $\text{MOS}$ capacitor (p-type semiconductor) is shown in the figure. The $\text{MOS}$ capacitor is under strong inversion with $V_{G} = 2 \; \text{V}.$ The corr...
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GATE ECE 2019 | Question: 10
The figure shows the high-frequency C-V curve of a MOS capacitor $(\text{at}\: T=300\: K)$ with $\Phi_{ms}= 0\: V$ and no oxide charges. The flat-band, inversion, and acc...
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GATE ECE 2016 Set 3 | Question: 38
Figures I and II show two MOS capacitors of unit area. The capacitor in Figure I has insulator materials $X$ (of thickness $t_1 = 1$ nm and dielectric constant $\varepsil...
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GATE ECE 2016 Set 2 | Question: 35
A voltage $V_{G}$ is applied across a $MOS$ capacitor with metal gate and $p$-type silicon substrate at $T=300$ $K$. The inversion carrier density (in number of carriers ...
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GATE ECE 2015 Set 2 | Question: 34
In a MOS capacitor with an oxide layer thickness of $10\: nm,$ the maximum depletion layer thickness is $100\: nm.$ The permittivities of the semiconductor and the oxide ...
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GATE ECE 2014 Set 3 | Question: 36
An ideal MOS capacitor has boron doping-concentration of $10^{15}cm^{-3}$ in the substrate. When a gate voltage is applied, a depletion region of width $0.5$ $\mu m$ is f...
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GATE ECE 2017 Set 2 | Question: 36
A MOS capacitor is fabricated on $p$-type Si (Silicon) where the metal work function is $4.1$ eV and electron affinity of Si is $4.0$ eV. $E_C-E_F=0.9$ eV, where $E_C$ an...
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