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41
GATE ECE 2024 | Question: 43
Consider a system $S$ represented in state space as \[ \frac{d x}{d t}=\left[\begin{array}{ll} 0 & -2 \\ 1 & -3 \end{array}\right] x+\left[\begin{array}{l} 1 \\ 0 \end{array}\right] r, y=\left[\begin{array}{ll} 2 & -5 \end{array}\ ...
Consider a system $S$ represented in state space as\[\frac{d x}{d t}=\left[\begin{array}{ll}0 & -2 \\1 & -3\end{array}\right] x+\left[\begin{array}{l}1 \\0\end{array}\rig...
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transfer-function
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42
GATE ECE 2024 | Question: 45
Consider the matrix $\left[\begin{array}{ll}1 & k \\ 2 & 1\end{array}\right]$, where $k$ is a positive real number. Which of the following vectors is/are eigenvector(s) of this matrix? $\left[\begin{array}{c}1 \\ -\sqrt{2 / k}\end{array}\right]$ ... $\left[\begin{array}{c}\sqrt{2 k} \\ -1\end{array}\right]$
Consider the matrix $\left[\begin{array}{ll}1 & k \\ 2 & 1\end{array}\right]$, where $k$ is a positive real number. Which of the following vectors is/are e...
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matrix-analysis
matrices
eigen-values
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43
GATE ECE 2024 | Question: 47
Let $X(t)=A \cos \left(2 \pi f_{0} t+\theta\right)$ be a random process, where amplitude $A$ and phase $\theta$ are independent of each other, and are uniformly distributed in the intervals $[-2,2]$ and $[0,2 \pi]$, respectively. $X(t)$ is ... quantization noise ratio (in $\mathrm{dB}$, rounded off to two decimal places) at the output of the quantizer is $\_\_\_\_\_\_$.
Let $X(t)=A \cos \left(2 \pi f_{0} t+\theta\right)$ be a random process, where amplitude $A$ and phase $\theta$ are independent of each other, and are uniformly distribut...
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46.4k
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130
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random-variable
signals-and-systems
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44
GATE ECE 2024 | Question: 48
A lossless transmission line with characteristic impedance $\mathrm{Z}_{0}=50 \Omega$ is terminated with an unknown load. The magnitude of the reflection co-efficient is $|\Gamma|=0.6$. As one moves towards the generator from the load, the maximum value of the input impedance magnitude looking towards the load (in $\Omega$ ) is $\_\_\_\_\_\_.$
A lossless transmission line with characteristic impedance $\mathrm{Z}_{0}=50 \Omega$ is terminated with an unknown load. The magnitude of the reflection co-efficient is ...
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transmision-line
impedance
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45
GATE ECE 2024 | Question: 49
The relationship between any N-length sequence $x[n]$ and its corresponding $\mathrm{N}$-point discrete Fourier transform $X[k]$ is defined as \[ X[k]=\mathcal{F}\{x[n]\} . \] Another sequence $y[n]$ is formed as below \[ y[n]=\mathcal{F}\{\mathcal{F}\{\mathcal{F}\{\mathcal{F}\{ ... } . \] For the sequence $x[n]=\{1,2,1,3\}$, the value of $Y[0]$ is $\_\_\_\_\_\_\_\_\_$.
The relationship between any N-length sequence $x[n]$ and its corresponding $\mathrm{N}$-point discrete Fourier transform $X[k]$ is defined as\[X[k]=\mathcal{F}\{x[n]\} ....
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discrete-fourier-transform
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46
GATE ECE 2024 | Question: 50
For the two port network shown below, the value of the $Y_{21}$ parameter (in Siemens) is $\_\_\_\_\_\_$.
For the two port network shown below, the value of the $Y_{21}$ parameter (in Siemens) is $\_\_\_\_\_\_$.
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two-port-network
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47
GATE ECE 2024 | Question: 51
Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of $100 \mathrm{~nm}$, a fixed positive oxide charge of $10^{-8} \mathrm{C} / \mathrm{cm}^{2}$ at the oxide-silicon interface, and a metal work function of $4.6 \mathrm{eV}$. ... the work function of the p-type silicon (in $\mathrm{eV}$, rounded off to two decimal places) is $\_\_\_\_\_\_$.
Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of $100 \mathrm{~nm}$, a fixed positive oxide charge of $10^{-8} \mathrm{C} / \mathrm{cm}^{2}...
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mos-capacitor
oxidation
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48
GATE ECE 2024 | Question: 52
In the network shown below, maximum power is to be transferred to the load $R_{L}$. The value of $R_{L}$ (in $\Omega$ ) is $\_\_\_\_\_\_\_$.
In the network shown below, maximum power is to be transferred to the load $R_{L}$.The value of $R_{L}$ (in $\Omega$ ) is $\_\_\_\_\_\_\_$.
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49
GATE ECE 2024 | Question: 53
A non-degenerate n-type semiconductor has $5 \%$ neutral dopant atoms. Its Fermi level is located at $0.25 \mathrm{eV}$ below the conduction band $\left(E_{C}\right)$ and the donor energy level $\left(E_{D}\right)$ has a degeneracy of $2$. Assuming the thermal voltage to ... $E_{C}$ and $E_{D}$ (in $\mathrm{eV}$, rounded off to two decimal places) is $\_\_\_\_\_\_\_$.
A non-degenerate n-type semiconductor has $5 \%$ neutral dopant atoms. Its Fermi level is located at $0.25 \mathrm{eV}$ below the conduction band $\left(E_{C}\right)$ and...
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doping
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GATE ECE 2024 | Question: 54
An $\text{NMOS}$ transistor operating in the linear region has $I_{D S}$ of $5 \mu \mathrm{A}$ at $V_{D S}$ of $0.1 \mathrm{~V}$. Keeping $V_{G S}$ constant, the $V_{D S}$ is increased to $1.5 \mathrm{~V}$ ... transconductance at the new operating point (in $\mu \mathrm{A} / \mathrm{V}$, rounded off to two decimal places) is $\_\_\_\_\_\_\_$.
An $\text{NMOS}$ transistor operating in the linear region has $I_{D S}$ of $5 \mu \mathrm{A}$ at $V_{D S}$ of $0.1 \mathrm{~V}$. Keeping $V_{G S}$ constant, the $V_{D S}...
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nmos-transistor
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51
GATE ECE 2024 | Question: 55
The photocurrent of a $\text{PN}$ junction diode solar cell is $1 \mathrm{~mA}$. The voltage corresponding to its maximum power point is $0.3 \mathrm{~V}$. If the thermal voltage is $30 \mathrm{mV}$, the reverse saturation current of the diode (in $\mathrm{nA}$, rounded off to two decimal places) is $\_\_\_\_\_\_$.
The photocurrent of a $\text{PN}$ junction diode solar cell is $1 \mathrm{~mA}$. The voltage corresponding to its maximum power point is $0.3 \mathrm{~V}$. If the thermal...
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p-n-junction-diode
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GATE ECE 2023 | Question: 1
Let $v_1=\left[\begin{array}{l}1 \\ 2 \\ 0\end{array}\right]$ and $v_2=\left[\begin{array}{l}2 \\ 1 \\ 3\end{array}\right]$ be two vectors. The value of the coefficient $\alpha$ in the expression $v_1=\alpha v_2+e$, which minimizes the length of the error vector $e$, is $\frac{7}{2}$ $\frac{-2}{7}$ $\frac{2}{7}$ $\frac{-7}{2}$
Let $v_1=\left[\begin{array}{l}1 \\ 2 \\ 0\end{array}\right]$ and $v_2=\left[\begin{array}{l}2 \\ 1 \\ 3\end{array}\right]$ be two vectors. The value of the coefficient $...
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GATE ECE 2023 | Question: 2
The rate of increase, of a scalar field $f(x, y, z)=x y z$, in the direction $v=(2,1,2)$ at a point $(0,2,1)$ is $\frac{2}{3}$ $\frac{4}{3}$ $2$ $4$
The rate of increase, of a scalar field $f(x, y, z)=x y z$, in the direction $v=(2,1,2)$ at a point $(0,2,1)$ is$\frac{2}{3}$$\frac{4}{3}$$2$$4$
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GATE ECE 2023 | Question: 4
The value of the contour integral, $\oint_C\left(\frac{z+2}{z^2+2 z+2}\right) d z$, where the contour $\mathrm{C}$ is $\left\{z:\left|z+1-\frac{3}{2} j\right|=1\right\}$, taken in the counter clockwise direction, is $-\pi(1+j)$ $\pi(1+j)$ $\pi(1-j)$ $-\pi(1-j)$
The value of the contour integral, $\oint_C\left(\frac{z+2}{z^2+2 z+2}\right) d z$, where the contour $\mathrm{C}$ is $\left\{z:\left|z+1-\frac{3}{2} j\right|=1\right\}$,...
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GATE ECE 2023 | Question: 5
Let the sets of eigenvalues and eigenvectors of a matrix $B$ be $\left\{\lambda_k \mid 1 \leq k \leq n\right\}$ and $\left\{v_k \mid 1 \leq k \leq n\right\}$, respectively. For any invertible matrix $P$, the sets of eigenvalues and eigenvectors of the matrix $A$, where ... $\left\{P^{-1} v_k \mid 1 \leq k \leq n\right\}$
Let the sets of eigenvalues and eigenvectors of a matrix $B$ be $\left\{\lambda_k \mid 1 \leq k \leq n\right\}$ and $\left\{v_k \mid 1 \leq k \leq n\right\}$, respectivel...
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GATE ECE 2023 | Question: 6
In a semiconductor, if the Fermi energy level lies in the conduction band, then the semiconductor is known as degenerate $\text{n}$-type. degenerate $\text{p}$-type. non-degenerate $\text{n}$-type. non-degenerate $\text{p}$-type.
In a semiconductor, if the Fermi energy level lies in the conduction band, then the semiconductor is known asdegenerate $\text{n}$-type.degenerate $\text{p}$-type.non-deg...
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GATE ECE 2023 | Question: 7
For an intrinsic semiconductor at temperature $\text{T}=0 \; \text{K}$, which of the following statement is true? All energy states in the valence band are filled with electrons and all energy states in the conduction band are empty ... the valence and conduction band are filled with holes. All energy states in the valence and conduction band are filled with electrons.
For an intrinsic semiconductor at temperature $\text{T}=0 \; \text{K}$, which of the following statement is true?All energy states in the valence band are filled with ele...
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GATE ECE 2023 | Question: 8
A series $\text{RLC}$ circuit has a quality factor $\text{Q}$ of $1000$ at a center frequency of $10^{6} \; \mathrm{rad} / \mathrm{s}$. The possible values of $\text{R, L}$ and $\text{C}$ are $R=1 \; \Omega, L=1 \; \mu H$ and $C=1 \; \mu F$ ... $C=1 \; \mu F$ $R=0.001 \; \Omega, L=1 \; \mu H$ and $C=1 \; \mu F$
A series $\text{RLC}$ circuit has a quality factor $\text{Q}$ of $1000$ at a center frequency of $10^{6} \; \mathrm{rad} / \mathrm{s}$. The possible values of $\text{R,...
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GATE ECE 2023 | Question: 9
For a $\text{MOS}$ capacitor, $\text{V}_{\mathrm{fb}}$ and $\text{V}_{\mathrm{t}}$ are the flat-band voltage and the threshold voltage, respectively. The variation of the depletion width $\left(\mathrm{W}_{\mathrm{dep}}\right)$ for varying gate voltage $\left(\text{V}_g\right)$ is best represented by
For a $\text{MOS}$ capacitor, $\text{V}_{\mathrm{fb}}$ and $\text{V}_{\mathrm{t}}$ are the flat-band voltage and the threshold voltage, respectively. The variation of the...
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303
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GATE ECE 2023 | Question: 10
Consider a narrow band signal, propagating in a lossless dielectric medium $\left(\varepsilon_{r}=4, \mu_{r}=1\right)$, with phase velocity $v_{p}$ and group velocity $v_{g}$. Which of the following statement is true? ($c$ ... $v_{p} > c, v_{g} < c$ $v_{p} < c, v_{g} < c$
Consider a narrow band signal, propagating in a lossless dielectric medium $\left(\varepsilon_{r}=4, \mu_{r}=1\right)$, with phase velocity $v_{p}$ and group velocity $v_...
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GATE ECE 2023 | Question: 11
In the circuit shown below, $\text{V}_1$ and $\text{V}_2$ are bias voltages. Based on input and output impedances, the circuit behaves as a voltage controlled voltage source. voltage controlled current source. current controlled voltage source. current controlled current source.
In the circuit shown below, $\text{V}_1$ and $\text{V}_2$ are bias voltages. Based on input and output impedances, the circuit behaves as avoltage controlled voltage sour...
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420
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GATE ECE 2023 | Question: 12
A cascade of common-source amplifiers in a unity gain feedback configuration oscillates when the closed loop gain is less than $1$ and the phase shift is less than $180^{\circ}$. the closed loop gain is greater than $1$ ... $180^{\circ}$. the closed loop gain is greater than $1$ and the phase shift is greater than $180^{\circ}$.
A cascade of common-source amplifiers in a unity gain feedback configuration oscillates whenthe closed loop gain is less than $1$ and the phase shift is less than $180^{\...
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672
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63
GATE ECE 2023 | Question: 14
The synchronous sequential circuit shown below works at a clock frequency $1 \; \mathrm{GHz}$. The throughput, in $\text{Mbits/s,}$ and the latency, in $\text{ns,}$ respectively, are $1000,3$ $333.33,1$ $2000,3$ $333.33,3$
The synchronous sequential circuit shown below works at a clock frequency $1 \; \mathrm{GHz}$. The throughput, in $\text{Mbits/s,}$ and the latency, in $\text{ns,}$ respe...
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GATE ECE 2023 | Question: 15
The open loop transfer function of a unity negative feedback system is $G(s)=\frac{k}{s\left(1+s T_1\right)\left(1+s T_2\right)}$, where $k, T_1$ and $T_2$ are positive constants. The phase cross-over frequency, in $\text{rad/s,}$ is $\frac{1}{\sqrt{T_1 T_2}}$ $\frac{1}{T_1 T_2}$ $\frac{1}{T_1 \sqrt{T_2}}$ $\frac{1}{T_2 \sqrt{T_1}}$
The open loop transfer function of a unity negative feedback system is $G(s)=\frac{k}{s\left(1+s T_1\right)\left(1+s T_2\right)}$, where $k, T_1$ and $T_2$ are positive c...
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GATE ECE 2023 | Question: 16
Consider a system with input $x(t)$ and output $y(t)=x\left(e^{t}\right)$. The system is Causal and time invariant. Non-causal and time varying. Causal and time varying. Non-causal and time invariant.
Consider a system with input $x(t)$ and output $y(t)=x\left(e^{t}\right)$. The system isCausal and time invariant.Non-causal and time varying.Causal and time varying.Non-...
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GATE ECE 2023 | Question: 17
Let $m(t)$ be a strictly band-limited signal with bandwidth $B$ and energy $E$. Assuming $\omega_{0}=10 B$, the energy in the $m(t) \cos \omega_{0} t$ is $\frac{E}{4}$ $\frac{E}{2}$ $E$ $2E$
Let $m(t)$ be a strictly band-limited signal with bandwidth $B$ and energy $E$. Assuming $\omega_{0}=10 B$, the energy in the $m(t) \cos \omega_{0} t$ is$\frac{E}{4}$$\f...
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GATE ECE 2023 | Question: 18
The Fourier transform $X(\omega)$ of $x(t)=e^{-t^{2}}$ is Note: $\int_{-\infty}^{\infty} e^{-y^{2}} d y=\sqrt{\pi}$ $\sqrt{\pi} e^{\frac{\omega^{2}}{2}}$ $\frac{e^{-\frac{\omega^{2}}{4}}}{2 \sqrt{\pi}}$ $\sqrt{\pi} e^{-\frac{\omega^{2}}{4}}$ $\sqrt{\pi} e^{-\frac{\omega^{2}}{2}}$
The Fourier transform $X(\omega)$ of $x(t)=e^{-t^{2}}$ isNote: $\int_{-\infty}^{\infty} e^{-y^{2}} d y=\sqrt{\pi}$$\sqrt{\pi} e^{\frac{\omega^{2}}{2}}$$\frac{e^{-\frac{\o...
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GATE ECE 2023 | Question: 19
In the table shown below, match the signal type with its spectral characteristics. Signal type Spectral characteristics (i) Continuous, aperiodic (a) Continuous, aperiodic (ii) Continuous, periodic (b) Continuous, periodic (iii) Discrete, aperiodic (c) Discrete, aperiodic (iv) ...
In the table shown below, match the signal type with its spectral characteristics. Signal type Spectral characteristics (i) Continuous, aperiodic(a) Continuous, aperiod...
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GATE ECE 2023 | Question: 20
For a real signal, which of the following is/are valid power spectral density/densities? $\text{S}_X(\omega)=\frac{2}{9+\omega^2}$ $\text{S}_X(\omega)=e^{-\omega^2} \cos ^2 \omega$
For a real signal, which of the following is/are valid power spectral density/densities?$\text{S}_X(\omega)=\frac{2}{9+\omega^2}$$\text{S}_X(\omega)=e^{-\omega^2} \cos ^2...
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GATE ECE 2023 | Question: 21
The signal-to-noise ratio $\mathrm{SNR}$ of an $\mathrm{ADC}$ with a full-scale sinusoidal input is given to be $61.96 \mathrm{~dB}$. The resolution of the $\mathrm{ADC}$ is_____________bits (rounded off to the nearest integer).
The signal-to-noise ratio $\mathrm{SNR}$ of an $\mathrm{ADC}$ with a full-scale sinusoidal input is given to be $61.96 \mathrm{~dB}$. The resolution of the $\mathrm{ADC}$...
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GATE ECE 2023 | Question: 22
In the circuit shown below, the current $i$ flowing through $200 \; \Omega$ resistor is___________ $\mathrm{mA}$ (rounded off to two decimal places).
In the circuit shown below, the current $i$ flowing through $200 \; \Omega$ resistor is___________ $\mathrm{mA}$ (rounded off to two decimal places).
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GATE ECE 2023 | Question: 23
For the two port network shown below, the $[\mathrm{Y}] – $parameters is given as $[Y]=\frac{1}{100}\left[\begin{array}{cc}2 & -1 \\ -1 & 4 / 3\end{array}\right] S$ The value of load impedance $\mathrm{Z}_{\mathrm{L},}$ in $\Omega$, for maximum power transfer will be ____________ (rounded off to the nearest integer).
For the two port network shown below, the $[\mathrm{Y}] – $parameters is given as$$[Y]=\frac{1}{100}\left[\begin{array}{cc}2 & -1 \\ -1 & 4 / 3\end{array}\right] S$$The...
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GATE ECE 2023 | Question: 24
For the circuit shown below, the propagation delay of each $ \mathrm{NAND}$ gate is $1 \mathrm{~ns}$. The critical path delay, in $\text{ns,}$ is______________(rounded off to the nearest integer).
For the circuit shown below, the propagation delay of each $ \mathrm{NAND}$ gate is $1 \mathrm{~ns}$. The critical path delay, in $\text{ns,}$ is______________(rounded of...
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GATE ECE 2023 | Question: 25
In the circuit shown below, switch $\mathrm{S}$ was closed for a long time. If the switch is opened at $t=0$, the maximum magnitude of the voltage $\mathrm{V}_{\mathrm{R}}, \text{in volts,}$ is_____________ (rounded off to the nearest integer).
In the circuit shown below, switch $\mathrm{S}$ was closed for a long time. If the switch isopened at $t=0$, the maximum magnitude of the voltage $\mathrm{V}_{\mathrm{R}}...
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GATE ECE 2023 | Question: 26
A random variable $\mathrm{X}$, distributed normally as $\mathrm{N(0,1)}$ undergoes the transformation $\mathrm{Y}=\mathrm{h}(\mathrm{X})$, given in the figure. The form of the probability density function of $\mathrm{Y}$ is (In the options given below, $a, b, c$ are non-zero ... $a \delta(y+2)+b \delta(y)+c \delta(y-2)+g(y)$ $a \delta(y+2)+b \delta(y-2)+g(y)$
A random variable $\mathrm{X}$, distributed normally as $\mathrm{N(0,1)}$ undergoes the transformation$\mathrm{Y}=\mathrm{h}(\mathrm{X})$, given in the figure. The form o...
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GATE ECE 2023 | Question: 27
The value of the line integral $\int_{P}^{Q}\left(z^{2} d x+3 y^{2} d y+2 x z \; d z\right)$ along the straight line joining the points $P(1,1,2)$ and $Q(2,3,1)$ is $20$ $24$ $29$ $-5$
The value of the line integral $\int_{P}^{Q}\left(z^{2} d x+3 y^{2} d y+2 x z \; d z\right)$ along the straight line joining the points $P(1,1,2)$ and $Q(2,3,1)$ is$20$$2...
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GATE ECE 2023 | Question: 29
The $\frac{V_{\text {OUT }}}{V_{\text {IN }}}$ of the circuit shown below is $-\frac{\mathrm{R}_4}{\mathrm{R}_3}$ $\frac{\mathrm{R}_4}{\mathrm{R}_3}$ $1+\frac{\text{R}_4}{\text{R}_3}$ $1-\frac{\mathrm{R}_4}{\mathrm{R}_3}$
The $\frac{V_{\text {OUT }}}{V_{\text {IN }}}$ of the circuit shown below is$-\frac{\mathrm{R}_4}{\mathrm{R}_3}$$\frac{\mathrm{R}_4}{\mathrm{R}_3}$$1+\frac{\text{R}_4}{\t...
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GATE ECE 2023 | Question: 30
In the circuit shown below, $D_1$ and $D_2$ are silicon diodes with cut-in voltage of $0.7 \mathrm{~V}$. $\mathrm{V}_{\mathrm{IN}}$ and $\mathrm{V}_{\mathrm{OUT}}$ are input and output voltages in volts. The transfer characteristic is
In the circuit shown below, $D_1$ and $D_2$ are silicon diodes with cut-in voltage of $0.7 \mathrm{~V}$. $\mathrm{V}_{\mathrm{IN}}$ and $\mathrm{V}_{\mathrm{OUT}}$ are in...
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GATE ECE 2023 | Question: 31
A closed loop system is shown in the figure where $\mathrm{k}>0$ and $\alpha>0$. The steady state error due to a ramp input $\left(\mathrm{R}(\mathrm{s})=\alpha / \mathrm{s}^2\right)$ is given by $\frac{2 \alpha}{\mathrm{k}}$ $\frac{\alpha}{\mathrm{k}}$ $\frac{\alpha}{2 \mathrm{k}}$ $\frac{\alpha}{4 \mathrm{k}}$
A closed loop system is shown in the figure where $\mathrm{k}>0$ and $\alpha>0$. The steady state error due to a ramp input $\left(\mathrm{R}(\mathrm{s})=\alpha / \mathrm...
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GATE ECE 2023 | Question: 32
In the following block diagram, $\mathrm{R}(\mathrm{s})$ and $\mathrm{D}(\mathrm{s})$ are two inputs. The output $\mathrm{Y}(\mathrm{s})$ is expressed as $Y(s)=G_1(s) R(s)+G_2(s) D(s)$. $\mathrm{G}_1(\mathrm{~s})$ and $\mathrm{G}_2(\mathrm{~s})$ ...
In the following block diagram, $\mathrm{R}(\mathrm{s})$ and $\mathrm{D}(\mathrm{s})$ are two inputs. The output $\mathrm{Y}(\mathrm{s})$ is expressed as $Y(s)=G_1(s) R(s...
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