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402
GATE ECE 1997 | Question 4.5
A half wave rectifier uses a diode with a forward resistance $\text{Rf}$. The voltage is $\text{V}_\text{m} \sin \omega t$ and the load resistance is $\text{R}_\text{L}$. The $\text{DC}$ ... $\frac{2 \mathrm{Vm}}{\sqrt{\pi}}$ $\frac{\mathrm{V}_{m}}{\mathrm{R}_{\mathrm{L}}}$
A half wave rectifier uses a diode with a forward resistance $\text{Rf}$. The voltage is $\text{V}_\text{m} \sin \omega t$ and the load resistance is $\text{R}_\text{L}$....
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403
GATE ECE 1997 | Question 4.6
The intrinsic carrier density at $300 \mathrm{~K}$ is $1.5 \times 10^{10}$ / $\mathrm{cm}^{3}$, in silicon. For $n$-type silicon doped to $2.25 \times$ $10^{15}$ atoms $/ \mathrm{cm}^{3}$ ... $n=1.5 \times 10^{10} / \mathrm{cm}^{3}, p=1.5 \times 10^{10} / \mathrm{cm}^{3}$
The intrinsic carrier density at $300 \mathrm{~K}$ is $1.5 \times 10^{10}$ / $\mathrm{cm}^{3}$, in silicon. For $n$-type silicon doped to $2.25 \times$ $10^{15}$ atoms $/...
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404
GATE ECE 1997 | Question 4.7
For the $\text{NMOS}$ logic gate shown in the figure is the logic function implemented is $\overline{\mathrm{ABCDE}}$ $(\mathrm{AB}+\overline{\mathrm{C}}) \cdot(\overline{\mathrm{D}+\mathrm{E}})$ ... $(\overline{\mathrm{A}+\mathrm{B}}) \cdot \mathrm{C}+\overline{\mathrm{D}} \cdot \overline{\mathrm{E}}$
For the $\text{NMOS}$ logic gate shown in the figure is the logic function implemented is$\overline{\mathrm{ABCDE}}$$(\mathrm{AB}+\overline{\mathrm{C}}) \cdot(\overline{\...
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405
GATE ECE 1997 | Question 4.8
In a $\text{J-K}$ flip-flip we have $\text{J=Q}$ and $\text{K}=1$. Assuming the flip flop was initially cleared and then clocked for $6$ puleses, the sequence at the $\text{Q}$ output will be $010000$ $011001$ $010010$ $010101$
In a $\text{J-K}$ flip-flip we have $\text{J=Q}$ and $\text{K}=1$. Assuming the flip flop was initially cleared and then clocked for $6$ puleses, the sequence at the $\te...
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407
GATE ECE 1997 | Question 4.10
The boolean function $\mathrm{A}+\mathrm{BC}$ is a reduced form of $\mathrm{AB}+\mathrm{BC}$ $(\mathrm{A}+\mathrm{B}) \cdot(\mathrm{A}+\mathrm{C})$ $\overline{\mathrm{A}} \mathrm{B}+\mathrm{A} \overline{\mathrm{B}} \mathrm{C}$ $(\mathrm{A}+\mathrm{C}) \cdot \mathrm{B}$
The boolean function $\mathrm{A}+\mathrm{BC}$ is a reduced form of$\mathrm{AB}+\mathrm{BC}$$(\mathrm{A}+\mathrm{B}) \cdot(\mathrm{A}+\mathrm{C})$$\overline{\mathrm{A}} \m...
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408
GATE ECE 1997 | Question 5.1
In the case of a linear time invariant system (1) Poles in the right half plane implies Exponential decay of output (2) Impulse response zero for $t \leq 0$ implies System is casual No stored energy in the system System is unstable.
In the case of a linear time invariant system(1) Poles in the right half plane implies Exponential decay of output(2) Impulse response zero for $t \leq 0$ impliesSystem i...
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409
GATE ECE 1997 | Question 5.2
If the Fourier Transform of deterministic signal $\mathrm{g}(\mathrm{t})$ is $\mathrm{G}(f)$, then (1) The Fourier Transform of $g(t-2)$ is $G(f) e^{-j(4 \pi f)}$ (2) The Fourier Transform of $g(t / 2)$ is $G(2 f)$ $2 G(2 f)$ $G(f-2)$
If the Fourier Transform of deterministic signal $\mathrm{g}(\mathrm{t})$ is $\mathrm{G}(f)$, then(1) The Fourier Transform of $g(t-2)$ is$G(f) e^{-j(4 \pi f)}$(2) The Fo...
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410
GATE ECE 1997 | Question 5.3
(1) An $8$-bit wide $5$ word sequential memory will have $8$ Fixed $\text{‘AND'}$ gates and $4$ programmable $\text{‘OR'}$ gates (2) A $256 \times 4$ $\text{EFROM}$ has Eight $4$ bit shift registers $4$ words of $32$ bits each $8$ address pins and $4$ data pins output
(1) An $8$-bit wide $5$ word sequential memory will have$8$ Fixed $\text{‘AND'}$ gates and $4$ programmable $\text{‘OR'}$ gates(2) A $256 \times 4$ $\text{EFROM}$ has...
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411
GATE ECE 1997 | Question 5.4
(1) Wave tilt Under-water propagation (2) Faraday Rotation Ground wave propagation Space wave propagation Ionospheric propagation
(1) Wave tiltUnder-water propagation(2) Faraday RotationGround wave propagationSpace wave propagationIonospheric propagation
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412
GATE ECE 1997 | Question 5.5
While moving data between registers of the $8085$ and the stack (1) a $\text{PUSH}$ instruction Pre increments the stack pointer (2) a $\text{POP}$ instruction Post increments the stack pointer Pre decrements the stack pointer Post decrements the stack pointer
While moving data between registers of the $8085$ and the stack(1) a $\text{PUSH}$ instructionPre increments the stack pointer(2) a $\text{POP}$ instructionPost increment...
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413
GATE ECE 1997 | Question 5.6
Negative feedback in (1) Voltage series configuration increase input impedance (2) Current shunt configuration decrease input impedance increases closed loop gain leads to oscillation
Negative feedback in(1) Voltage series configurationincrease input impedance(2) Current shunt configurationdecrease input impedanceincreases closed loop gainleads to osci...
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422
GATE ECE 1997 | Question 14
A sequence generator is shown in the figure is The counter status $\left(\mathrm{Q}_{0^{\prime}}, \mathrm{Q}_{1}, \mathrm{Q}_{2}\right)$ is initialised to $010$ ... rising clock edge. Give the sequence generate at $\mathrm{Q}_{0}$ till it repeats. What is the repetition rate of the generated sequence?
A sequence generator is shown in the figure is The counter status $\left(\mathrm{Q}_{0^{\prime}}, \mathrm{Q}_{1}, \mathrm{Q}_{2}\right)$ is initialised to $010$ using pre...
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425
GATE ECE 1997 | Question 17
For a typical $n-p-n$ transistor, as shown in the figure we have the following data available $\mathrm{W}_{\mathrm{C}}=20 \mu \mathrm{m}$ and Collcetor doping $=5 \times 10^{18} / \mathrm{cc}$ $\mathrm{W}_{\mathrm{E}}=1 \mu \mathrm{m}$ ...
For a typical $n-p-n$ transistor, as shown in the figure we have the following data available$\mathrm{W}_{\mathrm{C}}=20 \mu \mathrm{m}$ and Collcetor doping $=5 \times 1...
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427
GATE ECE 1997 | Question 19
An $\text{IC}$ $555$ ... for the configuration chosen. If necessary you can suggest modification in the external circuit configuration.
An $\text{IC}$ $555$ chip has been used to construct a pulse-Generator. Typical pin connections with components is shown below in the figure is for such an application. H...
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428
GATE ECE 1997 | Question 20
An $8085 \; \mu \mathrm{P}$ uses a $2 \; \mathrm{MHz}$ ... used above take $(3 n+1)$ clock cycles, where $n$ is the number of accesses to the memory, inclusive of the opcode fetch.
An $8085 \; \mu \mathrm{P}$ uses a $2 \; \mathrm{MHz}$ crystal. Find the time taken by it to execute the following delay subroutine, inclusive of the call instruction in ...
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429
GATE ECE 1997 | Question 21
In the figure is a linear time invariant discrete systme is shown. Blocks labelled $D$ represent unit delay elements. For $n<0$, you may assume that $x$ (n), $y_{1}(n), y_{2}(n)$ are all zero. Find the expression for $y_{1}(n)$ and $y_{2}(n)$ ... $y_{2}(n)$
In the figure is a linear time invariant discrete systme is shown. Blocks labelled $D$ represent unit delay elements. For $n<0$, you may assume that $x$ (n), $y_{1}(n), y...
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430
GATE ECE 1997 | Question 22
In the circuit of figure when $R=0 \; \Omega$, the current $i_{k}$ equals $10 \mathrm{~A}$ Find the value of $R$ for which it absorbs maximum power Find the value of $\varepsilon$ Find $V_{2}$ when $R=\infty$ (open circuit)
In the circuit of figure when $R=0 \; \Omega$, the current $i_{k}$ equals $10 \mathrm{~A}$Find the value of $R$ for which it absorbs maximum powerFind the value of $\vare...
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433
GATE ECE 1997 | Question 25
A block diagram of a system is shown in the figure is draw the spectrum of the output signal with relative aptitudes of the frequencies.
A block diagram of a system is shown in the figure is draw the spectrum of the output signal with relative aptitudes of the frequencies.
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434
GATE ECE 1997 | Question 26
Find the mean of a function $X(T)=\sin ^{2}(\alpha T)$, where $\alpha$ is a constant, and $T$ is a random variable. The $p d f$ of $\mathrm{T}$ is given by, \[ \begin{aligned} f(T) &=e^{-T} \text { for } T \geq 0 \\ &=0 \text { for } T<0 \end{aligned} \]
Find the mean of a function $X(T)=\sin ^{2}(\alpha T)$, where $\alpha$ is a constant, and $T$ is a random variable. The $p d f$ of $\mathrm{T}$ is given by,\[\begin{align...
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437
GATE ECE 1997 | Question 29
A uniform plane wave is normally incident from air on an infinitely thick magnetic material with relative permeability $100$ and relative permittivity $4$ see the figure is. The wave has an electric field of $1 \mathrm{V}$, meter $\text{(rms)}$. Find the average pointing vector inside the material.
A uniform plane wave is normally incident from air on an infinitely thick magnetic material with relative permeability $100$ and relative permittivity $4$ see the figure ...
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438
GATE ECE 1997 | Question 30
A dipole antenna has a $\sin \theta$ radiation pattern where the angle $\theta$ ... in the radiation pattern at an angle of $45^{\circ}$ from the ground plane? Find the direction of maximum radiation also.
A dipole antenna has a $\sin \theta$ radiation pattern where the angle $\theta$ is measured from the axis of the dipole. The dipole is vertically located above an ideal g...
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439
GATE ECE 2000 | Question 1.1
In the given circuit, the voltage $\text{v(t)}$ is $e^{\text {nt }}-e^{b t}$ $e^{\text {nt }}+e^{b t}$ $a e^{n t}-b e^{b t}$ $a e^{n t}+b e^{bt}$
In the given circuit, the voltage $\text{v(t)}$ is$e^{\text {nt }}-e^{b t}$$e^{\text {nt }}+e^{b t}$$a e^{n t}-b e^{b t}$$a e^{n t}+b e^{bt}$
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440
GATE ECE 2000 | Question 1.2
In the given circuit, the value of the voltage source $\mathrm{E}$ is $-16 \mathrm{~V}$ $4 \mathrm{~V}$ $-6 \mathrm{~V}$ $16 \mathrm{~V}$
In the given circuit, the value of the voltage source $\mathrm{E}$ is$-16 \mathrm{~V}$$4 \mathrm{~V}$$-6 \mathrm{~V}$$16 \mathrm{~V}$
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