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361
GATE ECE 1997 | Question 1.9
A probability density fucntion is given by $p(x)=\mathrm{K} e^{-x^2 / 2}-\infty<x<\infty$. The value of $K$ should be $\frac{1}{\sqrt{2 \pi}}$ $\sqrt{\frac{2}{\pi}}$ $\frac{1}{2 \sqrt{\pi}}$ $\frac{1}{\pi \sqrt{2}}$
A probability density fucntion is given by $p(x)=\mathrm{K} e^{-x^2 / 2}-\infty<x<\infty$. The value of $K$ should be$\frac{1}{\sqrt{2 \pi}}$$\sqrt{\frac{2}{\pi}}$$\frac{...
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GATE ECE 1997 | Question 1.10
A deterministic signal has the power spectrum given in the figure is, The minimum sampling rate needed to completely represent this signal is $1 \; \mathrm{kHz}$ $2 \; \mathrm{kHz}$ $3 \; \mathrm{kHz}$ None of the above
A deterministic signal has the power spectrum given in the figure is, The minimum sampling rate needed to completely represent this signal is$1 \; \mathrm{kHz}$$2 \; \mat...
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GATE ECE 1997 | Question 1.11
The voltage $V$ in the figure is $10 \mathrm{~V}$ $15 \mathrm{~V}$ $5 \mathrm{~V}$ None of the above
The voltage $V$ in the figure is$10 \mathrm{~V}$$15 \mathrm{~V}$$5 \mathrm{~V}$None of the above
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GATE ECE 1997 | Question 2.1
In the $\text{BJT}$ amplifier shown in the figure is the transistor is based in the forward active region. Putting a capacitor across $R_E$ will decrease the voltage gain and decrease the input impedance increase the voltage gain ... the input impedance decrease the voltage gain and increase the input impedance increase the voltage gain and increase the input impedance
In the $\text{BJT}$ amplifier shown in the figure is the transistor is based in the forward active region. Putting a capacitor across $R_E$ will decrease the voltage gain...
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GATE ECE 1997 | Question 2.2
A cascade amplifier stage is equivalent to a common emitter stage followed by a common base stage a common base stage followed by an emitter follower an emitter follower stage followed by a common base stage a common base stage followed by a common emitter stage
A cascade amplifier stage is equivalent toa common emitter stage followed by a common base stagea common base stage followed by an emitter followeran emitter follower sta...
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GATE ECE 1997 | Question 2.3
For a $\text{MOS}$ capacitor fabricated on a $p$-type semiconductor, strong inversion occurs when surface potential is equal to Fermi potential surface potential is zero surface potential is negative and equal to Fermi potential in magnitude surface potential is positive and equal to twice the Fermi potential
For a $\text{MOS}$ capacitor fabricated on a $p$-type semiconductor, strong inversion occurs whensurface potential is equal to Fermi potentialsurface potential is zerosur...
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GATE ECE 1997 | Question 2.4
In a common emitter $\text{BJT}$ amplifier, the maximum usable supply voltage is limited by Avalanche breakdown of Base-Emitter junction Collector-Base breakdown voltage with emitter open $\left(\mathrm{BV}_{\mathrm{CBO}}\right)$ Collector-Emitter breakdown ... with base open $\left(\mathrm{BV}_{\mathrm{CBO}}\right)$ Zener breakdown voltage of the Emitter-Base junction
In a common emitter $\text{BJT}$ amplifier, the maximum usable supply voltage is limited byAvalanche breakdown of Base-Emitter junctionCollector-Base breakdown voltage wi...
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GATE ECE 1997 | Question 2.5
Each cell of a Static Random Access Memory contains $6 \; \text{MOS}$ transistors $4 \; \mathrm{MOS}$ transistors and $2$ capacitors $2 \; \text{MOS}$ transistors and $4$ capacitors $1 \; \text{MOS}$ transistor and $1$ capacitor
Each cell of a Static Random Access Memory contains$6 \; \text{MOS}$ transistors$4 \; \mathrm{MOS}$ transistors and $2$ capacitors$2 \; \text{MOS}$ transistors and $4$ ca...
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GATE ECE 1997 | Question 2.6
A $2$ bit binary multiplier can be implemented using $2$ inputs $\text{ANDs}$ only $2$ input $\text{XOR s}$ and $4$ input $\text{AND}$ gates only Two $2$ inputs $\text{NORs}$ and one $\text{XNOR}$ gate $\text{XOR}$ gates and shift registers
A $2$ bit binary multiplier can be implemented using$2$ inputs $\text{ANDs}$ only$2$ input $\text{XOR s}$ and $4$ input $\text{AND}$ gates onlyTwo $2$ inputs $\text{NORs}...
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GATE ECE 1997 | Question 2.7
In standard $\text{TTL}$, the 'totem pole' stage refers to the multi-emitter input stage the phase splitter the output buffer open collector output stage
In standard $\text{TTL}$, the 'totem pole' stage refers tothe multi-emitter input stagethe phase splitterthe output bufferopen collector output stage
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GATE ECE 1997 | Question 2.8
The inverter $74 \; \mathrm{ALSO} 4$ has the following specifications \[ \begin{array}{l} \mathrm{I}_{\text {OH } \max }=-0.4 \mathrm{~mA}, \mathrm{l}_{\text {OLmax }}=8 \mathrm{~mA}, \mathrm{l}_{i H_{\max }}=20 \mathrm{~mA} \text {, } \\ \mathrm{l}_{\text {iLmax }}=-0.1 \mathrm{~mA} \text {, } \end{array} \] The fan-out based on the above will be $10$ $20$ $60$ $100$
The inverter $74 \; \mathrm{ALSO} 4$ has the following specifications\[ \begin{array}{l}\mathrm{I}_{\text {OH } \max }=-0.4 \mathrm{~mA}, \mathrm{l}_{\text {OLmax }}=8 \m...
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GATE ECE 1997 | Question 2.9
The output of the logic gate in the figure is $0$ $1$ $\text{A}$ $\mathrm{F}$
The output of the logic gate in the figure is$0$$1$$\text{A}$$\mathrm{F}$
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GATE ECE 1997 | Question 2.10
In an $8085 \; \mu \; \mathrm{P}$ system, the $\text{RST}$ instruction will cause an interrupt only if an interrupt service routine is not being executed only if a bit in the interrupt mask is made $0$ only if interrupts have been enabled by an $\text{El}$ instruction None of the above
In an $8085 \; \mu \; \mathrm{P}$ system, the $\text{RST}$ instruction will cause an interruptonly if an interrupt service routine is not being executedonly if a bit in t...
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GATE ECE 1997 | Question 3.1
In the circuit of the figure is the energy absorbed by the $4 \; \Omega$ resistor in the time interval $(0, \infty)$ is $36$ Joules $16$ Joules $256$ Joules None of the above
In the circuit of the figure is the energy absorbed by the $4 \; \Omega$ resistor in the time interval $(0, \infty)$ is$36$ Joules$16$ Joules$256$ JoulesNone of the above...
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GATE ECE 1997 | Question 3.2
In the circuit of the figure is the equivalent impedance seen across terminals $\text{a, b}$ is $\left(\frac{16}{3}\right) \Omega$ $\left(\frac{8}{3}\right) \Omega$ $\left(\frac{8}{3}+12 j\right) \Omega$ None of the above
In the circuit of the figure is the equivalent impedance seen across terminals $\text{a, b}$ is$\left(\frac{16}{3}\right) \Omega$$\left(\frac{8}{3}\right) \Omega$$\left(\...
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GATE ECE 1997 | Question 3.3
In the circuit of in the figure is the current $i_{D}$ through the ideal diode (zero cut in voltage and forward resistance) equals $0 \mathrm{~A}$ $4 \mathrm{~A}$ $1 \mathrm{~A}$ None of the above
In the circuit of in the figure is the current $i_{D}$ through the ideal diode (zero cut in voltage and forward resistance) equals$0 \mathrm{~A}$$4 \mathrm{~A}$$1 \mathrm...
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GATE ECE 1997 | Question 3.4
In the signal flow graph of the figure is $\text{y/ x}$ equals $3$ $\frac{5}{2}$ $2$ None of the above
In the signal flow graph of the figure is $\text{y/ x}$ equals$3$$\frac{5}{2}$$2$None of the above
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GATE ECE 1997 | Question 3.5
A certain linear time invariant system has the state and the output equations given below \[ \begin{array}{c} {\left[\begin{array}{l} \dot{\mathrm{X}}_{1} \\ \dot{\mathrm{X}}_{2} \end{array}\right]=\left[\begin{array}{rr} 1 & -1 \\ 0 & 1 \end{array}\right]\left[\ ... $\left.\frac{d y}{d t}\right|_{t=0}$ is $1$ $-1$ $0$ None of the above
A certain linear time invariant system has the state and the output equations given below\[\begin{array}{c}{\left[\begin{array}{l}\dot{\mathrm{X}}_{1} \\\dot{\mathrm{X}}_...
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GATE ECE 1997 | Question 3.6
A communication channel has first-order low pass transfer function. The channel is used to transmit pulses at a symbol rate greater than the half-power frequency of the low pass function. Which of the network shown in the figure is can be used to equalise the received pulses?
A communication channel has first-order low pass transfer function. The channel is used to transmit pulses at a symbol rate greater than the half-power frequency of the l...
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GATE ECE 1997 | Question 3.7
The power spectral density of a deterministic signal is given by $\left[\sin (f) / f^{2}\right]$ where $f$ is frequency. The autocorrelation function of this signal in the time domain is a rectangular pulse a delta function a sine pulse a triangular pulse
The power spectral density of a deterministic signal is given by $\left[\sin (f) / f^{2}\right]$ where $f$ is frequency. The autocorrelation function of this signal in th...
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GATE ECE 1997 | Question 3.8
An amplifier A has $6 \; d \mathrm{B}$ gain and $50 \; \Omega$ input and output impedances. The noise figure of this amplifier as shown in the figure is $(a)$ is $3 \; d \mathrm{B}$. A cascade of two such amplifiers as in the figure is will have a noise figure of $6 \; d \mathrm{B}$ $8 \; d \mathrm{B}$ $12 \;d \mathrm{B}$ None of the above
An amplifier A has $6 \; d \mathrm{B}$ gain and $50 \; \Omega$ input and output impedances. The noise figure of this amplifier as shown in the figure is $(a)$ is $3 \; d ...
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GATE ECE 1997 | Question 3.9
A parabolic dish antenna has a conical beam $2^{\circ}$ wide, the directivity of the antenna is approximately $20 \; d \mathrm{B}$ $30 \; d \mathrm{B}$ $40 \; d \mathrm{B}$ $50 \; d \mathrm{B}$
A parabolic dish antenna has a conical beam $2^{\circ}$ wide, the directivity of the antenna is approximately$20 \; d \mathrm{B}$$30 \; d \mathrm{B}$$40 \; d \mathrm{B}$$...
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GATE ECE 1997 | Question 3.10
A very lossy, $\lambda / 4$ long, $50 \; \Omega$ transmission line is open circuited at the load end. The input impedance measured at the other end of the line is approximately $0$ $50 \; \Omega$ $\infty$ None of the above
A very lossy, $\lambda / 4$ long, $50 \; \Omega$ transmission line is open circuited at the load end. The input impedance measured at the other end of the line is approxi...
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GATE ECE 1997 | Question 3.11
The skin depth at $10\; \mathrm{MHz}$ for a conductor is $1 \; \mathrm{cm}$. The phase velocity of an electromagnetic wave in the conductor at $1,000 \; \mathrm{MHz}$ is about $6 \times 10^{6} \mathrm{~m} / \mathrm{sec}$ $6 \times 10^{7} \mathrm{~m} / \mathrm{sec}$ $3 \times 10^{8} \mathrm{~m} / \mathrm{sec}$ $6 \times 10^{8} \mathrm{~m} / \mathrm{sec}$
The skin depth at $10\; \mathrm{MHz}$ for a conductor is $1 \; \mathrm{cm}$. The phase velocity of an electromagnetic wave in the conductor at $1,000 \; \mathrm{MHz}$ is ...
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GATE ECE 1997 | Question 4.1
The output voltage $V_{0}$ of the circuit shown in the figure is $-4 \mathrm{~V}$ $6 \mathrm{~V}$ $5 \mathrm{~V}$ $-5.5 \mathrm{~V}$
The output voltage $V_{0}$ of the circuit shown in the figure is$-4 \mathrm{~V}$$6 \mathrm{~V}$$5 \mathrm{~V}$$-5.5 \mathrm{~V}$
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GATE ECE 1997 | Question 4.2
The decoding circuit shown in the figure is has been used to generate the active low chip select signal for a microprocessor peripheral. (The address lines are designated as $\mathrm{AO}$ to $\mathrm{A} 7$ for $\mathrm{l} / \mathrm{O}$ ... $30 \; \mathrm{H}$ to $33 \; \mathrm{H}$ $70 \; \mathrm{H}$ to $73 \; \mathrm{H}$
The decoding circuit shown in the figure is has been used to generate the active low chip select signal for a microprocessor peripheral. (The address lines are designated...
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GATE ECE 1997 | Question 4.3
The following insturctions have been executed by an $8085 \; \mu \mathrm{P}$ ... $6019$ $6379$ $6979$ None of the above
The following insturctions have been executed by an $8085 \; \mu \mathrm{P}$$\begin{array}{cl}\text { ADDRESS (HEX) } & \text { INSTRUCTION } \\ 6010 & \text { LXI H, 8A ...
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GATE ECE 1997 | Question 4.4
A signed integer has been stored in a byte using the $2$'s complement format. We wish to store the same integer in a $16$ bit word. We should copy the original byte to the less significant byte of the word and fill the more ... significant bit of the original byte copy the original byte to the less significant byte as well as the more significant byte of the word
A signed integer has been stored in a byte using the $2$'s complement format. We wish to store the same integer in a $16$ bit word. We shouldcopy the original byte to the...
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GATE ECE 1997 | Question 4.5
A half wave rectifier uses a diode with a forward resistance $\text{Rf}$. The voltage is $\text{V}_\text{m} \sin \omega t$ and the load resistance is $\text{R}_\text{L}$. The $\text{DC}$ ... $\frac{2 \mathrm{Vm}}{\sqrt{\pi}}$ $\frac{\mathrm{V}_{m}}{\mathrm{R}_{\mathrm{L}}}$
A half wave rectifier uses a diode with a forward resistance $\text{Rf}$. The voltage is $\text{V}_\text{m} \sin \omega t$ and the load resistance is $\text{R}_\text{L}$....
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GATE ECE 1997 | Question 4.6
The intrinsic carrier density at $300 \mathrm{~K}$ is $1.5 \times 10^{10}$ / $\mathrm{cm}^{3}$, in silicon. For $n$-type silicon doped to $2.25 \times$ $10^{15}$ atoms $/ \mathrm{cm}^{3}$ ... $n=1.5 \times 10^{10} / \mathrm{cm}^{3}, p=1.5 \times 10^{10} / \mathrm{cm}^{3}$
The intrinsic carrier density at $300 \mathrm{~K}$ is $1.5 \times 10^{10}$ / $\mathrm{cm}^{3}$, in silicon. For $n$-type silicon doped to $2.25 \times$ $10^{15}$ atoms $/...
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GATE ECE 1997 | Question 4.7
For the $\text{NMOS}$ logic gate shown in the figure is the logic function implemented is $\overline{\mathrm{ABCDE}}$ $(\mathrm{AB}+\overline{\mathrm{C}}) \cdot(\overline{\mathrm{D}+\mathrm{E}})$ ... $(\overline{\mathrm{A}+\mathrm{B}}) \cdot \mathrm{C}+\overline{\mathrm{D}} \cdot \overline{\mathrm{E}}$
For the $\text{NMOS}$ logic gate shown in the figure is the logic function implemented is$\overline{\mathrm{ABCDE}}$$(\mathrm{AB}+\overline{\mathrm{C}}) \cdot(\overline{\...
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GATE ECE 1997 | Question 4.8
In a $\text{J-K}$ flip-flip we have $\text{J=Q}$ and $\text{K}=1$. Assuming the flip flop was initially cleared and then clocked for $6$ puleses, the sequence at the $\text{Q}$ output will be $010000$ $011001$ $010010$ $010101$
In a $\text{J-K}$ flip-flip we have $\text{J=Q}$ and $\text{K}=1$. Assuming the flip flop was initially cleared and then clocked for $6$ puleses, the sequence at the $\te...
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GATE ECE 1997 | Question 4.9
The gate delay of an $\text{NMOS}$ inverter is dominated by charge time rather than discharge time because the driver transistor has larger threshold voltage than the load transistor the driver transistor has larger leakage currents compared to the load transistor the load transistor has a smaller $\text{W/L}$ ratio compared to the driver transistor none of the above
The gate delay of an $\text{NMOS}$ inverter is dominated by charge time rather than discharge time becausethe driver transistor has larger threshold voltage than the load...
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GATE ECE 1997 | Question 4.10
The boolean function $\mathrm{A}+\mathrm{BC}$ is a reduced form of $\mathrm{AB}+\mathrm{BC}$ $(\mathrm{A}+\mathrm{B}) \cdot(\mathrm{A}+\mathrm{C})$ $\overline{\mathrm{A}} \mathrm{B}+\mathrm{A} \overline{\mathrm{B}} \mathrm{C}$ $(\mathrm{A}+\mathrm{C}) \cdot \mathrm{B}$
The boolean function $\mathrm{A}+\mathrm{BC}$ is a reduced form of$\mathrm{AB}+\mathrm{BC}$$(\mathrm{A}+\mathrm{B}) \cdot(\mathrm{A}+\mathrm{C})$$\overline{\mathrm{A}} \m...
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GATE ECE 1997 | Question 5.1
In the case of a linear time invariant system (1) Poles in the right half plane implies Exponential decay of output (2) Impulse response zero for $t \leq 0$ implies System is casual No stored energy in the system System is unstable.
In the case of a linear time invariant system(1) Poles in the right half plane implies Exponential decay of output(2) Impulse response zero for $t \leq 0$ impliesSystem i...
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GATE ECE 1997 | Question 5.2
If the Fourier Transform of deterministic signal $\mathrm{g}(\mathrm{t})$ is $\mathrm{G}(f)$, then (1) The Fourier Transform of $g(t-2)$ is $G(f) e^{-j(4 \pi f)}$ (2) The Fourier Transform of $g(t / 2)$ is $G(2 f)$ $2 G(2 f)$ $G(f-2)$
If the Fourier Transform of deterministic signal $\mathrm{g}(\mathrm{t})$ is $\mathrm{G}(f)$, then(1) The Fourier Transform of $g(t-2)$ is$G(f) e^{-j(4 \pi f)}$(2) The Fo...
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GATE ECE 1997 | Question 5.3
(1) An $8$-bit wide $5$ word sequential memory will have $8$ Fixed $\text{‘AND'}$ gates and $4$ programmable $\text{‘OR'}$ gates (2) A $256 \times 4$ $\text{EFROM}$ has Eight $4$ bit shift registers $4$ words of $32$ bits each $8$ address pins and $4$ data pins output
(1) An $8$-bit wide $5$ word sequential memory will have$8$ Fixed $\text{‘AND'}$ gates and $4$ programmable $\text{‘OR'}$ gates(2) A $256 \times 4$ $\text{EFROM}$ has...
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GATE ECE 1997 | Question 5.4
(1) Wave tilt Under-water propagation (2) Faraday Rotation Ground wave propagation Space wave propagation Ionospheric propagation
(1) Wave tiltUnder-water propagation(2) Faraday RotationGround wave propagationSpace wave propagationIonospheric propagation
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GATE ECE 1997 | Question 5.5
While moving data between registers of the $8085$ and the stack (1) a $\text{PUSH}$ instruction Pre increments the stack pointer (2) a $\text{POP}$ instruction Post increments the stack pointer Pre decrements the stack pointer Post decrements the stack pointer
While moving data between registers of the $8085$ and the stack(1) a $\text{PUSH}$ instructionPre increments the stack pointer(2) a $\text{POP}$ instructionPost increment...
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GATE ECE 1997 | Question 5.6
Negative feedback in (1) Voltage series configuration increase input impedance (2) Current shunt configuration decrease input impedance increases closed loop gain leads to oscillation
Negative feedback in(1) Voltage series configurationincrease input impedance(2) Current shunt configurationdecrease input impedanceincreases closed loop gainleads to osci...
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