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121
GATE ECE 2017 Set 1 | Question: 37
As shown , a uniformly doped Silicon bar of length $L=0.1\mu m$ with a donor concentration $N_{D}=10^{16}cm^{-3}$ is illuminated at $x=0$ ... that goes to $0$ at $x=L$, the magnitude of the diffusion current density at $x=L/2$, in $A/cm^{2}$, is ___________.
As shown , a uniformly doped Silicon bar of length $L=0.1\mu m$ with a donor concentration $N_{D}=10^{16}cm^{-3}$ is illuminated at $x=0$ such that electron and hole pair...
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46.4k
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333
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admin
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Nov 17, 2017
Electronic Devices
gate2017-ec-1
numerical-answers
electronic-devices
intrinsic-and-extrinsic-silicon
carrier-transport
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0
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0
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122
GATE ECE 2017 Set 2 | Question: 9
An n-channel enhancement mode MOSFET is biased at $V_{GS}$ >$V_{TH}$ and $V_{DS}$ > $(V_{GS}-V_{TH})$, where $V_{GS}$ is the gate-to-source voltage, $V_{DS}$ is the drain-to- ... voltage source with zero output impedance voltage source with non-zero output impedance current source with finite output impedance current source with infinite output impedance
An n-channel enhancement mode MOSFET is biased at $V_{GS}$ >$V_{TH}$ and $V_{DS}$ $(V_{GS}-V_{TH})$, where $V_{GS}$ is the gate-to-source voltage, $V_{DS}$ is the drai...
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46.4k
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105
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Nov 23, 2017
Electronic Devices
gate2017-ec-2
mosfet
electronic-devices
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0
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0
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123
GATE ECE 2017 Set 2 | Question: 11
Consider an $n$-channel MOSFET having width $W$, length $L$, electron mobility in the channel $\mu _{n}$ and oxide capacitance per unit area $C_{ox}$. If gate-to-source $V_{GS}=0.7$ V, drain-to-source voltage $V_{DS}=0.1 V$, $\mu _{n}C_{ox}=100 \mu A/V^{2}$, threshold voltage $V_{TH}=0.3V$ and $(W/L)=50$, then the transconductance $g_{m}$ (in mA/V) is __________.
Consider an $n$-channel MOSFET having width $W$, length $L$, electron mobility in the channel $\mu _{n}$ and oxide capacitance per unit area $C_{ox}$. If gate-to-source $...
admin
46.4k
points
101
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admin
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Nov 23, 2017
Electronic Devices
gate2017-ec-2
mosfet
numerical-answers
electronic-devices
+
–
0
votes
0
answers
124
GATE ECE 2017 Set 1 | Question: 36
The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of $n=1 \times 10^{16} cm^{3}$ and electronic charge $q=1.6 \times 10 ^{-19}C$. If a bias ... a $1 µm$ region of this semiconductor, the resulting current density in this region, in $kA/cm^{2} $, is _____.
The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of $n=1 \times 1...
admin
46.4k
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194
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admin
asked
Nov 17, 2017
Electronic Devices
gate2017-ec-1
carrier-transport
numerical-answers
electronic-devices
+
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0
votes
0
answers
125
GATE ECE 2017 Set 1 | Question: 7
In the circuit shown, the positive angular frequency $\omega$ (in radians per second) at which the magnitude of the phase difference between the voltages $V_1$ and $V_2$ equals $\frac{\pi}{4}$ radians, is _________
In the circuit shown, the positive angular frequency $\omega$ (in radians per second) at which the magnitude of the phase difference between the voltages $V_1$ and $V_2$ ...
admin
46.4k
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187
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admin
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Nov 17, 2017
Electronic Devices
gate2017-ec-1
numerical-answers
electronic-devices
+
–
0
votes
0
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126
GATE ECE 2017 Set 1 | Question: 10
An $n^+-n$ Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of $N_{D1}=1\times 10^{18}cm^{-3}$ and $N_{D2}=1\times 10^{15}cm^{-3}$ corresponding to the $n^+$ and $n$ regions respectively. At the operational temperature $T$, ... of the build-in potential of this device? $0.748 \: V$ $0.460 \: V$ $0.288 \: V$ $0.173 \: V$
An $n^+-n$ Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of $N_{D1}=1\times 10^{18}cm^{-3}$ and $N_{D2}=1\times 10^{15}cm^{-3}$...
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46.4k
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144
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admin
asked
Nov 17, 2017
Electronic Devices
gate2017-ec-1
carrier-transport
electronic-devices
intrinsic-and-extrinsic-silicon
+
–
0
votes
0
answers
127
GATE ECE 2017 Set 1 | Question: 38
As shown, two Silicon (Si) abrupt $p-n$ junction diodes are fabricated with uniform donor doping concentrations of $ N_{D1}=10^{14} cm^{-3} $ and $N_{D2}=10^{16}cm^{-3}$ in the $n$-regions of the diodes, and uniform acceptor ... in potentials of the diodes, the ratio $C_{2}/C_{1}$ of their reverse bias capacitance for the same applied reverse bias, is _________.
As shown, two Silicon (Si) abrupt $p-n$ junction diodes are fabricated with uniform donor doping concentrations of $ N_{D1}=10^{14} cm^{-3} $ and $N_{D2}=10^{16}cm^{-3}$ ...
admin
46.4k
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76
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admin
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Nov 17, 2017
Electronic Devices
gate2017-ec-1
numerical-answers
p-n-junction
electronic-devices
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