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Recent questions tagged intrinsicandextrinsicsilicon
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GATE ECE 2016 Set 1  Question: 39
Consider a silicon sample at $T = 300 \: K$, with a uniform donor density $N_d = 5 \times 10 ^{16} cm^{3}$ , illuminated uniformly such that the optical generation rate is $G_{opt}=1.5 \times 10^{20} cm^{3}s^{1}$ throughout the sample. The incident radiation is turned ... $3.73 \times 10^{11}cm^{3}$ $7.5 \times 10^{13}cm^{3}$ and $4.12 \times 10^{11}cm^{3}$
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Mar 28, 2018
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Electronic Devices
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Milicevic3306
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15.8k
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27
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gate2016ec1
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2
GATE ECE 2015 Set 2  Question: 9
An $n$type silicon sample is uniformly illuminated with light which generates $10^{20}$ electronhole pairs per $cm^{3}$ per second. The minority carrier lifetime in the sample is $1\mu s$. In the steady state, the hole concentration in the sample is approximately $10^{x}$, where $x$ is an integer. The value of $x$ is _______.
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Mar 28, 2018
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Milicevic3306
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15.8k
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34
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gate2015ec2
numericalanswers
electronicdevices
intrinsicandextrinsicsilicon
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3
GATE ECE 2015 Set 2  Question: 10
A piece of silicon is doped uniformly with phosphorous with a doping concentration of $10^{16}/cm^{3}.$ The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is $1.6 \times 10^{19} \:C.$ The conductivity $\text{(in S } cm^{1})$ of the silicon sample at $300\:K$ is _______.
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Mar 28, 2018
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Electronic Devices
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Milicevic3306
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15.8k
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gate2015ec2
numericalanswers
electronicdevices
intrinsicandextrinsicsilicon
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4
GATE ECE 2015 Set 2  Question: 33
A dc voltage of $10\: V$ is applied across an $n$type silicon bar having a rectangular crosssection and a length of $1\:cm$ as shown in figure. The donor doping concentration $N_{D}$ and the mobility of electrons $\mu_{n}$ ... The average time $(\text{in}\: \mu s)$ taken by the electrons to move from one end of the bar to other end is ________.
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Mar 28, 2018
in
Electronic Devices
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Milicevic3306
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15.8k
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24
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gate2015ec2
numericalanswers
electronicdevices
intrinsicandextrinsicsilicon
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5
GATE ECE 2014 Set 4  Question: 9
In the figure, $\text{ln }(\rho _i)$ is plotted as a function of $1/T$, where $\rho_i$ is the intrinsic resistivity of silicon, $T$ is the temperature, and the plot is almost linear. The slope of the line can be used to estimate band gap ... the sum of electron and hole mobility in silicon $(\mu _n + \mu _p)^{1}$ intrinsic carrier concentration of silicon $(n_i)$
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Mar 26, 2018
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Electronic Devices
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Milicevic3306
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15.8k
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14
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gate2014ec4
electronicdevices
intrinsicandextrinsicsilicon
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6
GATE ECE 2014 Set 4  Question: 12
Two silicon diodes, with a forward voltage drop of $0.7 \: V$, are used in the circuit shown in the figure. The range of input voltage $V_i$ for which the output voltage $V_o=V_i$, is $0.3 \:V < V_i < 1.3 \: V$ $0.3 \:V < V_i < 2 \: V$ $1.0 \:V < V_i < 2.0 \: V$ $1.7 \:V < V_i < 2.7 \: V$
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Mar 26, 2018
in
Electronic Devices
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Milicevic3306
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gate2014ec4
electronicdevices
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7
GATE ECE 2014 Set 4  Question: 34
Consider a silicon sample doped with $N_D = 1 \times 10^{15}/cm^3$ donor atoms. Assume that the intrinsic carrier concentration $n_i = 1.5 \times 10^{10}/cm^3$. If the sample is additionally doped with $N_A = 1 \times 10^{18}/cm^3$ acceptor atoms, the approximate number of electrons$/cm^3$ in the sample, at $T=300 \:K$, will be ________.
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Mar 26, 2018
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Milicevic3306
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gate2014ec4
numericalanswers
electronicdevices
intrinsicandextrinsicsilicon
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8
GATE ECE 2014 Set 3  Question: 34
The donor and accepter impurities in an abrupt junction silicon diode are $1\times 10^{16} cm^{3}$ and $5\times 10^{18}$cm^{3}$, respectively. Assume that the intrinsic carrier concentration in silicon $n_{i}= 1.5\times 10^{10}cm^{3}$ at $300K, \frac{kT}{q}= 26$ $ ... $0.7$ $V$ and $3.3\times 10^{5} cm$ $0.86$ $V$ and $3.3\times 10^{5} cm$
asked
Mar 26, 2018
in
Electronic Devices
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Milicevic3306
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15.8k
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11
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gate2014ec3
electronicdevices
intrinsicandextrinsicsilicon
0
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9
GATE ECE 2014 Set 2  Question: 8
A silicon bar is doped with donor impurities $N_{D}= 2.25 \times 10^{15} \text{atoms} / cm^{3}$. Given the intrinsic carrier concentration of silicon at $T = 300 \: K$ is $n_{i}= 1.5 \times 10^{10} cm^{3}.$ Assuming complete impurity ionization, the equilibrium electron and ... $n_{0}=2.25\times 10^{15}cm^{3}, \: p_{0}= 1\times 10^{5}cm^{3}$
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Mar 26, 2018
in
Electronic Devices
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Milicevic3306
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15.8k
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17
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gate2014ec2
electronicdevices
intrinsicandextrinsicsilicon
0
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10
GATE ECE 2014 Set 2  Question: 36
When a silicon diode having a doping concentration of $N_{A}= 9\times 10^{16}cm^{3}$ on $p$side and $N_{D}= 1 \times 10^{16}cm^{3}$ on $n$side is reverse biased, the total depletion width is found to be $3 \mu$ ... $0.3 \mu m$ and $0.42 \times 10^{5} V/cm$ $2.1 \mu m$ and $0.42 \times 10^{5} V/cm$
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Mar 26, 2018
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Electronic Devices
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Milicevic3306
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15.8k
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24
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gate2014ec2
electronicdevices
intrinsicandextrinsicsilicon
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11
GATE ECE 2012  Question: 1
The current $i_b$ through the base of a silicon $npn$ transistor is $1+0.1\cos(10000\pi t)\:mA$. At $300\:K$, the $r_\pi$ in the small signal model of the transistor is $250\:\Omega$ $27.5\:\Omega$ $25\:\Omega$ $22.5\:\Omega$
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Mar 25, 2018
in
Electronic Devices
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Milicevic3306
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15.8k
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19
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gate2012ec
electronicdevices
intrinsicandextrinsicsilicon
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12
GATE ECE 2017 Set 1  Question: 37
As shown , a uniformly doped Silicon bar of length $L=0.1\mu m$ with a donor concentration $N_{D}=10^{16}cm^{3}$ is illuminated at $x=0$ ... that goes to $0$ at $x=L$, the magnitude of the diffusion current density at $x=L/2$, in $A/cm^{2}$, is ___________.
asked
Nov 17, 2017
in
Electronic Devices
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admin
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2.8k
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66
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gate2017ec1
numericalanswers
electronicdevices
intrinsicandextrinsicsilicon
carriertransport
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13
GATE ECE 2017 Set 1  Question: 10
An $n^+n$ Silicon device is fabricated with uniform and nondegenerate donor doping concentrations of $N_{D1}=1\times 10^{18}cm^{3}$ and $N_{D2}=1\times 10^{15}cm^{3}$ corresponding to the $n^+$ and $n$ regions respectively. At the operational temperature $T$, ... of the buildin potential of this device? $0.748 \: V$ $0.460 \: V$ $0.288 \: V$ $0.173 \: V$
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Nov 17, 2017
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Electronic Devices
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admin
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2.8k
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35
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gate2017ec1
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