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1161
GATE ECE 1996 | Question 2.4
A uniform plane wave in air is normally incident on infinitely thick slab. If the refractive index of the glass slab is $1.5$, then the percentage of incident power that is reflected from the air-glass interface is $0 \%$ $4 \%$ $20 \%$ $100 \%$
A uniform plane wave in air is normally incident on infinitely thick slab. If the refractive index of the glass slab is $1.5$, then the percentage of incident power that ...
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1162
GATE ECE 1996 | Question 2.5
In a bipolar transistor at room temperature, if the emitter current is doubled the voltage across its base-emitter junction doubles halves increases by about $20 \; \mathrm{mV}$ decreases by about $20 \; \mathrm{mV}$
In a bipolar transistor at room temperature, if the emitter current is doubled the voltage across its base-emitter junctiondoubleshalvesincreases by about $20 \; \mathrm{...
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1163
GATE ECE 1996 | Question 2.6
An $\text{npn}$ transistor has a beta cut-off frequency $f \beta$ of $1 \; \mathrm{MHz}$, and common emitter short circuit low frequency current gain $\beta \mathrm{O}$ of $200$. It unity gain frequency $f \mathrm{T}$ and the alpha cut-off frequency $f \alpha$ ... $199 \;\mathrm{MHz}, 200 \; \mathrm{MHz}$ $201 \; \mathrm{MHz}, 200 \; \mathrm{MHz}$
An $\text{npn}$ transistor has a beta cut-off frequency $f \beta$ of $1 \; \mathrm{MHz}$, and common emitter short circuit low frequency current gain $\beta \mathrm{O}$ o...
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1164
GATE ECE 1996 | Question 2.7
A silicon $n$ $\text{MOSFET}$ has a threshold voltage of $1$ $\mathrm{V}$ and oxide thickness of $\mathrm{AO}$. $\left[\varepsilon_{r}\left(\mathrm{siO}_{2}\right)=3.9, \varepsilon_{\mathrm{o}}=8.854 \times 10^{-14} \mathrm{~F} / \mathrm{cm}\right.$ ... $5.4 \times 10^{11} / \mathrm{cm}^{2}, p$-type $5.4 \times 10^{11} / \mathrm{cm}^{2}, n$-type
A silicon $n$ $\text{MOSFET}$ has a threshold voltage of $1$ $\mathrm{V}$ and oxide thickness of $\mathrm{AO}$.$\left[\varepsilon_{r}\left(\mathrm{siO}_{2}\right)=3.9, \v...
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1165
GATE ECE 1996 | Question 2.8
A Darlington stage is shown in the figure is. If the transconductance of $Q_{1}$ is $g_{m 1}$ and $Q_{2}$ is $g_{m 2}$, then the overall transconductance $g_{m c}\left[\triangleq \frac{i_{c}^{c}}{v_{b c}^{c}}\right]$ is given by $g_{m 1}$ $0.5 \; g_{\text {m } 1}$ $g_{m 2}$ $0.5 \; g_{m 2}$
A Darlington stage is shown in the figure is. If the transconductance of $Q_{1}$ is $g_{m 1}$ and $Q_{2}$ is $g_{m 2}$, then the overall transconductance $g_{m c}\left[\t...
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1166
GATE ECE 1996 | Question 2.9
Value of $R$ in the oscillator circuit shown in the given figure, so chosen that it just oscillates at an angular frequency of $\omega$. The value of $\omega$ and the required value of $R$ ... $10^{5} \; \mathrm{rad} / \mathrm{sec}, 10^{5} \; \Omega$
Value of $R$ in the oscillator circuit shown in the given figure, so chosen that it just oscillates at an angular frequency of $\omega$. The value of $\omega$ and the req...
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1167
GATE ECE 1996 | Question 2.10
A Zener diode in the circuit shown in the figure is has a knee current of $5 \mathrm{~mA}$, and a maximum allowed power dissipation of $300 \mathrm{~mW}$. What are the minimum and maximum load currents that can be drawn safely from the circuit, keeping the output voltage ... $10 \mathrm{~mA}, 55 \mathrm{~mA}$ $60 \mathrm{~mA}, 180 \mathrm{~mA}$
A Zener diode in the circuit shown in the figure is has a knee current of $5 \mathrm{~mA}$, and a maximum allowed power dissipation of $300 \mathrm{~mW}$. What are the mi...
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1168
GATE ECE 1996 | Question 2.11
A dynamic $\text{RAM}$ cell which hold $5 \mathrm{~V}$ has to be refreshed every $20 \mathrm{~m}$ secs, so that the stored voltage does not fall by more than $0.5 \mathrm{~V}$. If the cell has a constant discharge current of $0.1 \; \mathrm{pA}$, the storage capacitance ... $4 \times 10^{-9} \mathrm{~F}$ $4 \times 10^{-12} \mathrm{~F}$ $4 \times 10^{-15} \mathrm{~F}$
A dynamic $\text{RAM}$ cell which hold $5 \mathrm{~V}$ has to be refreshed every $20 \mathrm{~m}$ secs, so that the stored voltage does not fall by more than $0.5 \mathrm...
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1169
GATE ECE 1996 | Question 2.12
A $10$ - bit $\text{ADC}$ with a full scale output voltage of $10.24 \mathrm{~V}$ is designed to have $\mathrm{a} \pm \mathrm{LSB} / 2$ accuracy. If the $\mathrm{ADC}$ is calibrated at $25^{\circ} \mathrm{C}$ ... $\pm 800 \; \mu \; \mathrm{V} /{ }^{\circ} \mathrm{C}$
A $10$ - bit $\text{ADC}$ with a full scale output voltage of $10.24 \mathrm{~V}$ is designed to have $\mathrm{a} \pm \mathrm{LSB} / 2$ accuracy. If the $\mathrm{ADC}$ is...
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1170
GATE ECE 1996 | Question 2.13
A memory system of size $26 \mathrm{~K}$ bytes is required to be designed using memory chips which have $12$ address lines and $4$ data lines each. The number of such chips required to design the memory system is $2$ $4$ $8$ $16$
A memory system of size $26 \mathrm{~K}$ bytes is required to be designed using memory chips which have $12$ address lines and $4$ data lines each. The number of such chi...
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1171
GATE ECE 1996 | Question 2.14
The following sequence of instructions are executed by an $8085$ microprocessor: $\begin{matrix} 1000 &LXI & SP &27 \; FF \\ 1000 &CALL & & 1006\\ 1006 &POP \; H & & \end{matrix}$ ... $\mathrm{SP}=27 \; \mathrm{FF}, \mathrm{HL}=1006$ $\mathrm{SP}=27 \; \mathrm{FD}, \mathrm{HL}=1006$
The following sequence of instructions are executed by an $8085$ microprocessor:$\begin{matrix}1000 &LXI & SP &27 \; FF \\ 1000 &CALL & & 1006\\ 1006 &POP \; H & & \...
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1172
GATE ECE 1996 | Question 2.15
The number of bits in a binary $\mathrm{PCM}$ system is increased from $n$ to $n+1$. As a result, the signal to quantization noise ratio will improve by a factor $\frac{n+1}{n}$ $2^{(n+1) / n}$ $2^{2(n+1) / n}$ which is independent of $n$
The number of bits in a binary $\mathrm{PCM}$ system is increased from $n$ to $n+1$. As a result, the signal to quantization noise ratio will improve by a factor$\frac{n+...
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1173
GATE ECE 1996 | Question 2.16
The autocorrelation function of an energy signal has no symmetry conjugate symmetry odd symmetry even symmetry
The autocorrelation function of an energy signal hasno symmetryconjugate symmetryodd symmetryeven symmetry
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1174
GATE ECE 1996 | Question 2.17
An $\text{FM}$ signal with a modulation index $9$ is applied to a frequency tripler. The modulation index in the output signal will be $0$ $3$ $9$ $27$
An $\text{FM}$ signal with a modulation index $9$ is applied to a frequency tripler. The modulation index in the output signal will be$0$$3$$9$$27$
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1175
GATE ECE 1996 | Question 2.18
The critical frequency of an ionospheric layer is $10 \; \mathrm{MHz}$. What is the maximum launching angle from the horizon for which $20 \; \mathrm{MHz}$ wave will be reflected by the layer? $0^{\circ}$ $30^{\circ}$ $45^{\circ}$ $90^{\circ}$
The critical frequency of an ionospheric layer is $10 \; \mathrm{MHz}$. What is the maximum launching angle from the horizon for which $20 \; \mathrm{MHz}$ wave will be r...
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1176
GATE ECE 1996 | Question 2.19
A $1 \mathrm{~km}$ long microwave link uses two antennas each having $30 \mathrm{~dB}$ gain. If the power transmitted by one antenna is $1 \mathrm{~W}$ at $3 \; \mathrm{GHz}$, the power received by the other antenna is approximately $98.6 \; \mu \mathrm{W}$ $76.8 \; \mu \mathrm{W}$ $63.4 \; \mu \mathrm{W}$ $55.2 \; \mu W$
A $1 \mathrm{~km}$ long microwave link uses two antennas each having $30 \mathrm{~dB}$ gain. If the power transmitted by one antenna is $1 \mathrm{~W}$ at $3 \; \mathrm{G...
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1177
GATE ECE 1996 | Question 2.20
Some unknown material has a conductivity of $10^{6} \; \mathrm{mho} / \mathrm{m}$ and a permeability of $4 \pi \times 10^{-7} \; \mathrm{H} / \mathrm{m}$. The skin depth for the material at $1 \; \mathrm{GHz}$ is $15.9 \; \mu \mathrm{m}$ $20.9 \; \mu \mathrm{m}$ $25.9 \; \mu \mathrm{m}$ $30.9 \; \mu \mathrm{m}$
Some unknown material has a conductivity of $10^{6} \; \mathrm{mho} / \mathrm{m}$ and a permeability of $4 \pi \times 10^{-7} \; \mathrm{H} / \mathrm{m}$. The skin depth ...
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1178
GATE ECE 1996 | Question 3.1
In the circuit shown in the figure is $(a)-(c)$, assuming initial voltage and capacitors and currents through the inductors to be zero at the time of switching $(t=0)$, then at anytime $t>0$. Current increases ... time Current decreases monotonically with time Current remains constant at $V/R$ Current first increases then decreases No current can ever flow
In the circuit shown in the figure is $(a)-(c)$, assuming initial voltage and capacitors and currents through the inductors to be zero at the time of switching $(t=0)$, t...
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1179
GATE ECE 1996 | Question 3.2
(a) Cascade amplifier (b) Differential (c) Darlington pair does not provide current gain is a wideband amplifier amplifier has very low input common-emitter impedance and very amplifier high current gain has very high input impedance and very high current gain provides high common mode voltage rejection
(a) Cascade amplifier(b) Differential(c) Darlington pairdoes not provide current gainis a wideband amplifier amplifierhas very low input common-emitter impedance and very...
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1180
GATE ECE 1996 | Question 3.3
(a) A shift register (b) A multiplexer (c) A decoder can for code conversion can be used to generate memory can be used chip select for parallel-to-serial be used conversion as a many-to-one switch for analog-to-digital conversion
(a) A shift register(b) A multiplexer(c) A decoder canfor code conversion can be usedto generate memory can be used chip selectfor parallel-to-serial be used conversionas...
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1181
GATE ECE 1996 | Question 3.4
(a) Capture effect is (b) Granular noise (c) Guard band is an $\text{AM}$ system a characteristics of an $\text{FM}$ system occurs in a $\text{DM}$ system required in a $\text{FDM}$ system a $\text{PCM}$ system a $\text{TDM}$ system
(a) Capture effect is (b) Granular noise(c) Guard band isan $\text{AM}$ system a characteristics ofan $\text{FM}$ system occurs ina $\text{DM}$ system required ina $\text...
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1182
GATE ECE 1996 | Question 3.5
(a) SSB Modulation (b) $\nabla \cdot \overline{\mathrm{B}}=0$ (c) Model dispersion Transmission line Hilbert transform Faraday's law Absence of magnetic monopoles Waveguides Phase-locked loop
(a) SSB Modulation(b) $\nabla \cdot \overline{\mathrm{B}}=0$(c) Model dispersionTransmission lineHilbert transformFaraday's lawAbsence of magnetic monopolesWaveguidesPhas...
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1183
GATE ECE 2006 | Question: 1
The rank of the matrix $\left[\begin{array}{ccc}1 & 1 & 1 \\ 1 & -1 & 0 \\ 1 & 1 & 1\end{array}\right]$ is $0$ $1$ $2$ $3$
The rank of the matrix $\left[\begin{array}{ccc}1 & 1 & 1 \\ 1 & -1 & 0 \\ 1 & 1 & 1\end{array}\right]$ is$0$$1$$2$$3$
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1184
GATE ECE 2006 | Question: 2
$\nabla \times \nabla \times \mathrm{P},$ where $\mathrm{P}$ is a vector, is equal to $\mathrm{P} \times \nabla \times \mathrm{P}-\nabla^{2} \mathrm{P}$ $\nabla^{2} \text{P} +\nabla(\nabla \bullet \text{P})$ $\nabla^{2} \mathrm{P}+\nabla \times \mathrm{P}$ $\nabla(\nabla \bullet \mathrm{P})-\nabla^{2} \mathrm{P}$
$\nabla \times \nabla \times \mathrm{P},$ where $\mathrm{P}$ is a vector, is equal to$\mathrm{P} \times \nabla \times \mathrm{P}-\nabla^{2} \mathrm{P}$$\nabla^{2} \text{P...
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1185
GATE ECE 2006 | Question: 3
$\displaystyle{}\iint(\nabla \times \mathrm{P}) \bullet \mathrm{ds},$ where $\mathrm{P}$ is a vector, is equal to $\displaystyle{}\oint \text{P} \bullet d l$ $\displaystyle{}\oint \nabla \times \nabla \times \mathrm{P} \bullet d l$ $\displaystyle{}\oint \nabla \times \mathrm{P} \bullet d l$ $\displaystyle{}\iiint \nabla \bullet \mathrm{P} d v$
$\displaystyle{}\iint(\nabla \times \mathrm{P}) \bullet \mathrm{ds},$ where $\mathrm{P}$ is a vector, is equal to$\displaystyle{}\oint \text{P} \bullet d l$$\displaystyle...
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1186
GATE ECE 2006 | Question: 4
A probability density function is of the form $\qquad p(x)=\mathrm{Ke}^{-\alpha|x|}, x \in(-\infty, \infty)$ The value of $\text{K}$ is $0.5$ $1$ $0.5 \alpha$ $\alpha$
A probability density function is of the form$\qquad p(x)=\mathrm{Ke}^{-\alpha|x|}, x \in(-\infty, \infty)$The value of $\text{K}$ is$0.5$$1$$0.5 \alpha$$\alpha$
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1187
GATE ECE 2006 | Question: 5
A solution for the differential equation $ \qquad \dot{x}(t)+2 x(t)=\delta(t)$ with initial condition $x(0-)=0$ is $e^{-2 t} \; u(t)$ $e^{2 t} \; u(t)$ $e^{-t} \; u(t)$ $e^{t} \; u(t)$
A solution for the differential equation$ \qquad \dot{x}(t)+2 x(t)=\delta(t)$with initial condition $x(0-)=0$ is$e^{-2 t} \; u(t)$$e^{2 t} \; u(t)$$e^{-t} \; u(t)$$e^{t} ...
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1188
GATE ECE 2006 | Question: 6
A low-pass filter having a frequency response $\mathrm{H}(\mathrm{j} \omega)=\mathrm{A}(\omega) \;e^{j{\phi(\omega)}}$ does not produce any phase distortion, if $\mathrm{A}(\omega)=\mathrm{C}\omega^{2}, \phi(\omega)=k \omega^{3}$ ... $\mathrm{A}(\omega)=\mathrm{C}, \phi(\omega)=k \omega^{-1}$
A low-pass filter having a frequency response $\mathrm{H}(\mathrm{j} \omega)=\mathrm{A}(\omega) \;e^{j{\phi(\omega)}}$ does not produce any phase distortion, if$\mathrm{A...
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1189
GATE ECE 2006 | Question: 7
The values of voltage $\left(\mathrm{V}_{\mathrm{D}}\right)$ across a tunnel-diode corresponding to peak and valley currents are $\text{V}_{\text{P}}$ and $\text{V}_{\text{V}}$ respectively. The range of tunnel-diode voltage $\text{V}_{\text{D}}$ for which the ... $\mathrm{V}_{\mathrm{D}} \geq \mathrm{V}_{\mathrm{V}}$
The values of voltage $\left(\mathrm{V}_{\mathrm{D}}\right)$ across a tunnel-diode corresponding to peak and valley currents are $\text{V}_{\text{P}}$ and $\text{V}_{\tex...
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1190
GATE ECE 2006 | Question: 8
The concentration of minority carriers in an extrinsic semiconductor under equilibrium is directly proportional to the doping concentration inversely proportional to the doping concentration directly proportional to the intrinsic concentration inversely proportional to the intrinsic concentration
The concentration of minority carriers in an extrinsic semiconductor under equilibrium isdirectly proportional to the doping concentrationinversely proportional to the do...
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1191
GATE ECE 2006 | Question: 9
Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the diffusion current drift current recombination current induced current
Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially thediffusion currentdrift currentrecombination c...
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1192
GATE ECE 2006 | Question: 10
The phenomenon known as "Early Effect" in a bipolar transistor refers to a reduction of the effective base-width caused by electron-hole recombination at the base the reverse biasing of the base-collector junction the forward biasing of emitter-base junction the early removal of stored base charge during saturation-to-cutoff switching
The phenomenon known as "Early Effect" in a bipolar transistor refers to a reduction of the effective base-width caused byelectron-hole recombination at the basethe rever...
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1193
GATE ECE 2006 | Question: 11
The input impedance $\left(\text{Z}_i\right)$ and the output impedance $\left(\text{Z}_o\right)$ of an ideal transconductance (voltage controlled current source) amplifier are $\text{Z}_i=0, \text{Z}_o=0$ $\text{Z}_i=0, \text{Z}_o=\infty$ $\text{Z}_i=\infty, \text{Z}_o=0$ $\text{Z}_i=\infty, \text{Z}_o=\infty$
The input impedance $\left(\text{Z}_i\right)$ and the output impedance $\left(\text{Z}_o\right)$ of an ideal transconductance (voltage controlled current source) amplifie...
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1194
GATE ECE 2006 | Question: 12
An $n$-channel depletion MOSFET has following two points on its $\mathrm{I}_\text{D}-\mathrm{V}_{\text {GS}}$ curve $\text{V}_{\text{Gs}}=0$ at $\text{I}_\text{D}=12 \mathrm{~mA}$ and $\mathrm{V}_{\mathrm{GS}}=-6$ Volts at $\mathrm{I}_{\mathrm{D}}=0$ Which ... $\text{V}_{\text {Gs }}=0 \; \text{Volts}$ $\mathrm{V}_{\mathrm{Gs}}=3 \; \text{Volts}$
An $n$-channel depletion MOSFET has following two points on its $\mathrm{I}_\text{D}-\mathrm{V}_{\text {GS}}$ curve$\text{V}_{\text{Gs}}=0$ at $\text{I}_\text{D}=12 \math...
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1195
GATE ECE 2006 | Question: 13
The number of product terms in the minimized sum-of-product expression obtained through the following $\text{K}$-map is (where, " $d$ ... $2$ $3$ $4$ $5$
The number of product terms in the minimized sum-of-product expression obtained through the following $\text{K}$-map is (where, " $d$ " denotes don't care states)$$\begin...
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1196
GATE ECE 2006 | Question: 14
Let $x(t) \longleftrightarrow \mathrm{X}(j \omega)$ be Fourier Transform pair. The Fourier Transform of the signal $x(5 t-3)$ in terms of $X(j \omega)$ is given as $\frac{1}{5} e^ - \frac{j 3\omega }{5} \times\left(\frac{j \omega}{5}\right)$ ... $\frac{1}{5} e^{j 3 \omega} \times\left(\frac{j \omega}{5}\right)$
Let $x(t) \longleftrightarrow \mathrm{X}(j \omega)$ be Fourier Transform pair. The Fourier Transform of the signal $x(5 t-3)$ in terms of $X(j \omega)$ is given as$\frac{...
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1197
GATE ECE 2006 | Question: 15
The Dirac delta function $\delta(t)$ is defined as $\delta(t)= \begin{cases}1, & t=0 \\ 0, & \text { otherwise }\end{cases}$ $\delta(t)= \begin{cases}\infty, & t=0 \\ 0, & \text { otherwise }\end{cases}$ ... $\displaystyle{}\int_{-\infty}^\infty \delta(t) d t=1$
The Dirac delta function $\delta(t)$ is defined as$\delta(t)= \begin{cases}1, & t=0 \\ 0, & \text { otherwise }\end{cases}$$\delta(t)= \begin{cases}\infty, & t=0 \\ 0, & ...
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1198
GATE ECE 2006 | Question: 16
If the region of convergence of $x_1[n]+x_2[n]$ is $\frac{1}{3}<|z|<\frac{2}{3}$, then the region of convergence of $x_1[n]-x_2[n]$ includes $\frac{1}{3}<|z|<3$ $\frac{2}{3}<|z|<3$ $\frac{2}{3}<|z|<3$ $\frac{1}{3}<|z|<\frac{2}{3}$
If the region of convergence of $x_1[n]+x_2[n]$ is $\frac{1}{3}<|z|<\frac{2}{3}$, then the region of convergence of $x_1[n]-x_2[n]$ includes $\frac{1}{3}<|z|<3$$\frac{2}{...
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GATE ECE 2006 | Question: 17
The open-loop transfer function of a unity-gain feedback control system is given by $ \text{G}(s)=\frac{\text{K}}{(s+1)(s+2)} $ The gain margin of the system in $\text{dB}$ is given by $0$ $1$ $20$ $\infty $
The open-loop transfer function of a unity-gain feedback control system is given by $$ \text{G}(s)=\frac{\text{K}}{(s+1)(s+2)} $$ The gain margin of the system in $\text{...
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GATE ECE 2006 | Question: 18
In the system shown below, $x(t)=(\sin t) u(t)$. In steady-steady-state, the response $y(t)$ will be $\frac{1}{\sqrt{2}} \sin \left(t-\frac{\pi}{4}\right)$ $\frac{1}{\sqrt{2}} \sin \left(t+\frac{\pi}{4}\right)$ $\frac{1}{\sqrt{2}} e^{-t} \sin t$ $\sin t-\cos t$
In the system shown below, $x(t)=(\sin t) u(t)$. In steady-steady-state, the response $y(t)$ will be$\frac{1}{\sqrt{2}} \sin \left(t-\frac{\pi}{4}\right)$$\frac{1}{\sqrt{...
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