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1121
GATE ECE 1995 | Question 2.2
A transistor having $\alpha=0.99$ and $\mathrm{V}_{\mathrm{BE}}=0.7 \mathrm{~V}$, is used in the circuit shown the figure is. The value of the collector current will be
A transistor having $\alpha=0.99$ and $\mathrm{V}_{\mathrm{BE}}=0.7 \mathrm{~V}$, is used in the circuit shown the figure is. The value of the collector current will be
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1122
GATE ECE 1995 | Question 2.3
The circuit shown the given figure, supplies power to an $8 \; \Omega$ speaker, $\text{LS}$. The values of $\mathrm{I}_{\mathrm{C}}$ and $\mathrm{V}_{\mathrm{CE}}$ for this circuit will be : $\mathrm{I}_{\mathrm{C}} = $ __________ and $\mathrm{V}_{\mathrm{CE}} = $ ____________
The circuit shown the given figure, supplies power to an $8 \; \Omega$ speaker, $\text{LS}$. The values of $\mathrm{I}_{\mathrm{C}}$ and $\mathrm{V}_{\mathrm{CE}}$ for th...
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1123
GATE ECE 1995 | Question 2.4
In the given circuit the given figure, if the voltage inputs $\mathrm{V}-$ and $\mathrm{V}+$ are to be amplified by the same amplification factor, the value of $R$ should be
In the given circuit the given figure, if the voltage inputs $\mathrm{V}-$ and $\mathrm{V}+$ are to be amplified by the same amplification factor, the value of $R$ should...
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1124
GATE ECE 1995 | Question 2.5
An $\text{npn}$ transistor under forward-active mode of operation is biased at ${I}_{C} =1 \mathrm{~mA}$, and has a total emitter-base capacitance $\mathrm{C}_{K}$ of $12 \; \mathrm{pF}$, and the base transit time $\tau_{F}$ of ... $V_{T}=26 \; \mathrm{mV}$ ]
An $\text{npn}$ transistor under forward-active mode of operation is biased at ${I}_{C} =1 \mathrm{~mA}$, and has a total emitter-base capacitance $\mathrm{C}_{K}$ of $12...
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1125
GATE ECE 1995 | Question 2.6
An $\text{RC}$-coupled amplifier is assumed to have a single-pole low frequency transfer function. The maximum lower cut-off frequency allowed for the amplifier to pass $50 \mathrm{~Hz}$ square wave with no more than $10 \%$ tilt is __________.
An $\text{RC}$-coupled amplifier is assumed to have a single-pole low frequency transfer function. The maximum lower cut-off frequency allowed for the amplifier to pass $...
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46.4k
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1126
GATE ECE 1995 | Question 2.7
An $\text{OP-AMP}$ is used as a zero-crossing detector. If the maximum output available from the $\text{OP-AMP}$ is $\pm 12 \mathrm{~V} \; p – p$, and the slew rate of the $\text{OP-AMP}$ is $12 \mathrm{~V} / \mu \mathrm{sec}$, then the maximum frequency of the input signal that can be applied without causing a reduction in the $p – p$ output is
An $\text{OP-AMP}$ is used as a zero-crossing detector. If the maximum output available from the $\text{OP-AMP}$ is $\pm 12 \mathrm{~V} \; p – p$, and the slew rate of ...
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1127
GATE ECE 1995 | Question 2.8
A power amplifiers delivers $50 \mathrm{~W}$ output at $50 \%$ efficiency. The ambient temperature is $25^{\circ} \mathrm{C}$. If the maximum allowable junction temperature is $150^{\circ} \mathrm{C}$, then the maximum thermal resistance $\phi_{j c}$ that can be tolerated is _________.
A power amplifiers delivers $50 \mathrm{~W}$ output at $50 \%$ efficiency. The ambient temperature is $25^{\circ} \mathrm{C}$. If the maximum allowable junction temperatu...
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1128
GATE ECE 1995 | Question 2.9
An amplifier has an open-loop gain of $100$, and its lower-and upper-cut-off frequency of $100 \mathrm{~Hz}$ and $100 \; \mathrm{kHz}$, respectively. A feedback network with a feedback fact or of $0.99$ is connected to the amplifier. The new lower and upper-cut-off frequencies are at ________ and __________.
An amplifier has an open-loop gain of $100$, and its lower-and upper-cut-off frequency of $100 \mathrm{~Hz}$ and $100 \; \mathrm{kHz}$, respectively. A feedback network w...
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1129
GATE ECE 1995 | Question 2.10
An $n$ – channel $\text{JFET}$ has $\mathrm{I}_{\text {DSS }}=1 \mathrm{~mA}$ and $\mathrm{V}_{P}=-5 \mathrm{~V}$. Its maximum transconductance is _________.
An $n$ – channel $\text{JFET}$ has $\mathrm{I}_{\text {DSS }}=1 \mathrm{~mA}$ and $\mathrm{V}_{P}=-5 \mathrm{~V}$.Its maximum transconductance is _________.
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1130
GATE ECE 1995 | Question 3.1
(A) Fourier transform of a Gaussian function (B) Convolution of a Rectangular pulse with itself (C) Current through an inductor for a step input voltage Gaussian function Rectangular pulse Triangular pulse Ramp function Zero
(A) Fourier transform of a Gaussian function(B) Convolution of a Rectangular pulse with itself(C) Current through an inductor for a step input voltageGaussian function Re...
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1131
GATE ECE 1995 | Question 3.2
In a bipolar junction transistor if (A) the current gain increases (B) the collector break-down voltage increases (C) the cut-off frequency increases the base doping is increased and the base width is reduced the base doping is reduced and ... are reduced the emitter area is increased and the collector area is reduced the base doping and the base width are increased
In a bipolar junction transistor if(A) the current gain increases(B) the collector break-down voltage increases(C) the cut-off frequency increasesthe base doping is incre...
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1132
GATE ECE 1995 | Question 3.3
In a $\text{JFET}$ if (A) the pinch-off voltage decreases (B) the transconductance increases (C) the transit time of the carriers in the channel is reduced the channel doping is reduced the channel length is increased the conductivity of the channel increased the channel length is reduced the Gate area is reduced
In a $\text{JFET}$ if(A) the pinch-off voltage decreases(B) the transconductance increases(C) the transit time of the carriers in the channel is reducedthe channel dopin...
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1133
GATE ECE 1995 | Question 3.4
In an extriansic semiconductor if (A) the resistivity decreases (B) the temperature coefficient of resistivity is negative (C) the photo conductivity is low the doping concentration is low the length of the semiconductor is reduced the band gap is high the area of cross-section of the semiconductor is increased the doping concentration is increased
In an extriansic semiconductor if(A) the resistivity decreases(B) the temperature coefficient of resistivity is negative(C) the photo conductivity is low the doping conce...
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1134
GATE ECE 1995 | Question 3.5
For a $\text{TTL}$ gate, match the following (A) $\mathrm{V}_{\mathrm{OH}}$ $\text{(min)}$ (B) $\mathrm{V}_{\mathrm{IH}}$ $\text{(min)}$ (C) $\mathrm{V}_{\mathrm{OL}}$ $\text{(max)}$. $2.4$ volts $1.5$ volts $0.4$ volts $2.0$ volts $0.8$ volts
For a $\text{TTL}$ gate, match the following(A) $\mathrm{V}_{\mathrm{OH}}$ $\text{(min)}$(B) $\mathrm{V}_{\mathrm{IH}}$ $\text{(min)}$(C) $\mathrm{V}_{\mathrm{OL}}$ $\tex...
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1135
GATE ECE 1995 | Question 3.6
For an $\text{ADC}$, match the following (A) Flash converter (B) Dual slope converter (C) Successive approximation converter requires a conversion time of the order of a few seconds requires a digital-to-analog converter minimizes the effect of power supply interference requires a very complex hardware is a tracking $\text{A/D}$ convertes.
For an $\text{ADC}$, match the following(A) Flash converter(B) Dual slope converter(C) Successive approximation converterrequires a conversion time of the order of a few ...
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1136
GATE ECE 1995 | Question 3.7
(A) Common-collector amplifier (B) Common-emitter amplifier (C) Common-base amplifier Provides voltage gain but no current gain Provides current gain but no voltage gain Provides neither voltage nor power gain Provides neither current nor power gain Provides both voltage and current gain
(A) Common-collector amplifier(B) Common-emitter amplifier(C) Common-base amplifierProvides voltage gain but no current gainProvides current gain but no voltage gainPro...
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1137
GATE ECE 1995 | Question 3.9
(A) $\text{AM}$ system (B) SSB system (C) PCM ( $n$ bit) system $2 B$ (Band width of the modulating signal) $2 \mathrm{~B}$ Between $\text{B}$ and $\text{2B}$ $2 n \mathrm{~B}$ $n \mathrm{~B}$ \[ \mathrm{V}_{0}(s)=\frac{\mathrm{A}}{s^{2}+1} \operatorname{coth}(\alpha s) \] where $\alpha$ is a constant. Determine the value of $\alpha$
(A) $\text{AM}$ system(B) SSB system(C) PCM ( $n$ bit) system$2 B$ (Band width of the modulating signal)$2 \mathrm{~B}$Between $\text{B}$ and $\text{2B}$$2 n \mathrm{~B}$...
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1138
GATE ECE 1996 | Question 1.1
In the given figure, $A_{1}, A_{2}$ and $A_{3}$ are ideal ammeters. If $\mathrm{A}_{2}$ and $\mathrm{A}_{3}$ read $3 \mathrm{~A}$ and $4 \mathrm{~A}$ respectvely, then $A_{1}$ should read $1 \mathrm{~A}$ $5 \mathrm{~A}$ $7 \mathrm{~A}$ None of these
In the given figure, $A_{1}, A_{2}$ and $A_{3}$ are ideal ammeters. If $\mathrm{A}_{2}$ and $\mathrm{A}_{3}$ read $3 \mathrm{~A}$ and $4 \mathrm{~A}$ respectvely, then $A...
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1139
GATE ECE 1996 | Question 1.2
In the circuit of the given figure, assume that the diodes are ideal and the meter is an average indicating ammeter. The ammeter will read $0.4 \sqrt{2} \mathrm{~A}$ $0.4 \mathrm{~A}$ $\frac{0.8}{\pi} \mathrm{A}$ $\frac{0.4}{\pi}$
In the circuit of the given figure, assume that the diodes are ideal and the meter is an average indicating ammeter. The ammeter will read$0.4 \sqrt{2} \mathrm{~A}$$0.4 \...
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1140
GATE ECE 1996 | Question 1.3
The number of independent loops for a network with $n$ nodes and $b$ branches is $n-1$ $b-n$ $b-n+1$ independent of the number of nodes
The number of independent loops for a network with $n$ nodes and $b$ branches is$n-1$$b-n$$b-n+1$independent of the number of nodes
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1141
GATE ECE 1996 | Question 1.4
A lossless transmission line having $50 \; \Omega$ charateristic impedance and lengh $\lambda / 4$ is short circuited at one end and connected to an ideal voltage source of $1 \mathrm{~V}$ at the other end. The current drawn from the voltage source is $0$ $0.02 \mathrm{~A}$ $\infty$ none of these
A lossless transmission line having $50 \; \Omega$ charateristic impedance and lengh $\lambda / 4$ is short circuited at one end and connected to an ideal voltage source ...
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1142
GATE ECE 1996 | Question 1.5
The $p$ – type substrate in a conventional $p n$ – junction isolated integrated circuit should be connected to nowhere, i.e. left floating a $dc$ ground potential the most positive potential available in the circuit the most negative potential available in the circuit
The $p$ – type substrate in a conventional $p n$ – junction isolated integrated circuit should be connected tonowhere, i.e. left floatinga $dc$ ground potentialthe mo...
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1143
GATE ECE 1996 | Question 1.6
If a transistor is operating with both of its junctions forward biased, but with the collector base forward bias greater than the emitter-base forward bias, then it is operating in the forward active mode reverse saturation mode reverse active mode forward saturation mode
If a transistor is operating with both of its junctions forward biased, but with the collector base forward bias greater than the emitter-base forward bias, then it is op...
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1144
GATE ECE 1996 | Question 1.7
The common-emitter short-circuit current gain $\beta$ of a transistor is a monotonically increasing function of the collector current $\mathrm{I}_{\mathrm{C}}$. is a monotonically decreasing function of $\mathrm{I}_{\mathrm{C}}$ ... decreases with further increase in $\mathrm{I}_{\mathrm{C}}$ is not a function of $\mathrm{I}_{\mathrm{C}}$
The common-emitter short-circuit current gain $\beta$ of a transistoris a monotonically increasing function of the collector current $\mathrm{I}_{\mathrm{C}}$.is a monoto...
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1145
GATE ECE 1996 | Question 1.8
A $n$ – channel silicon $\left(E_{g}=1.1 \; \mathrm{eV}\right)$ MOSFET was fabricated using $n+$ poly-silicon gate and the threshold voltage was found to be $1 \mathrm{~V}$. Now, if the gate is changed to $v^{+}$poly-silicon, other things remaining the same, the new threshold voltage should be $-0.1 \mathrm{~V}$ $0 \mathrm{~V}$ $1.0 \mathrm{~V}$ $2.1 \mathrm{~V}$
A $n$ – channel silicon $\left(E_{g}=1.1 \; \mathrm{eV}\right)$ MOSFET was fabricated using $n+$ poly-silicon gate and the threshold voltage was found to be $1 \mathrm{...
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1146
GATE ECE 1996 | Question 1.9
The circuit shown in the figure is that of a non-inverting amplifier an inverting amplifier an oscillator a Schmitt Trigger
The circuit shown in the figure is that ofa non-inverting amplifieran inverting amplifieran oscillatora Schmitt Trigger
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1147
GATE ECE 1996 | Question 1.10
Schottky clamping is resorted in $\text{TTL}$ gates to reduce propagation delay to increase noise margins to increase packing density to increase fan-out
Schottky clamping is resorted in $\text{TTL}$ gatesto reduce propagation delayto increase noise marginsto increase packing densityto increase fan-out
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1148
GATE ECE 1996 | Question 1.11
A pulse train can be delayed by a finite number of clock periods using a serial-in serial-out shift register a serial-in parallel-out shift register a parallel-in serial-out shift register a paralel-in parallel-out shift register
A pulse train can be delayed by a finite number of clock periods usinga serial-in serial-out shift registera serial-in parallel-out shift registera parallel-in serial-out...
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1149
GATE ECE 1996 | Question 1.12
A $12$ – bit $\text{ADC}$ is operating with a $1 \; \mu \; \mathrm{sec}$ clock period and the total conversion time is seen to be $14 \; \mu \;\mathrm{sec}$. The $\text{ADC}$ must be of the Flash type counting type integrating type successive approximation type
A $12$ – bit $\text{ADC}$ is operating with a $1 \; \mu \; \mathrm{sec}$ clock period and the total conversion time is seen to be $14 \; \mu \;\mathrm{sec}$. The $\text...
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1150
GATE ECE 1996 | Question 1.13
The total number of memory accesses involved (inclusive of the $op$ – code fetch) when an $8085$ processor executes the instruction $\text{LDA}$ $2003$ is $1$ $2$ $3$ $4$
The total number of memory accesses involved (inclusive of the $op$ – code fetch) when an $8085$ processor executes the instruction $\text{LDA}$ $2003$ is$1$$2$$3$$4$
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1151
GATE ECE 1996 | Question 1.14
The trigonometric Fourier series of an even function of time does not have the $d c$ term cosine terms sine terms odd harmonic terms
The trigonometric Fourier series of an even function of time does not have the$d c$ termcosine termssine termsodd harmonic terms
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1152
GATE ECE 1996 | Question 1.15
The Fourier transform of a real-valued time signal has odd symmetry even symmetry conjugate symmetry no symmetry
The Fourier transform of a real-valued time signal hasodd symmetryeven symmetryconjugate symmetryno symmetry
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1153
GATE ECE 1996 | Question 1.16
A rectangular pulse of duration $T$ is applied to a filter matched to this input. The output of the filter is a rectangular pulse of duration $T$ rectangular pulse of duration $2 \mathrm{~T}$ triangular pulse sine function
A rectangular pulse of duration $T$ is applied to a filter matched to this input. The output of the filter is arectangular pulse of duration $T$rectangular pulse of durat...
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1154
GATE ECE 1996 | Question 1.17
The image channel rejection in a superheterodyne receiver comes from $\text{IF}$ stages only $\text{RF}$ stages only detector and $\text{RF}$ stages only detector $\text{RF}$, and $\text{IF}$ stages
The image channel rejection in a superheterodyne receiver comes from$\text{IF}$ stages only$\text{RF}$ stages onlydetector and $\text{RF}$ stages onlydetector $\text{RF}$...
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1155
GATE ECE 1996 | Question 1.18
The capacitance per unit length and the characteristic impedance of a lossless transmission line are $\mathrm{C}$ and $\mathrm{Zo}$ respectively. The velocity of a travelling wave on the transmission line $Z_{0} C$ $\frac{1}{\mathrm{Z}_{\mathrm{o}} \mathrm{C}}$ $\frac{Z_{0}}{C}$ $\frac{\mathrm{C}}{\mathrm{Z}_{0}}$
The capacitance per unit length and the characteristic impedance of a lossless transmission line are $\mathrm{C}$ and $\mathrm{Zo}$ respectively. The velocity of a travel...
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1156
GATE ECE 1996 | Question 1.19
A transverse electromagnetic wave with circular polarisation is received by a dipole antenna. Due to polarisation mismatch, the power transfer efficiency from the wave to the antenna is reduced to about $50 \%$ $35.3 \%$ $25 \%$ $0 \%$
A transverse electromagnetic wave with circular polarisation is received by a dipole antenna. Due to polarisation mismatch, the power transfer efficiency from the wave to...
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1157
GATE ECE 1996 | Question 1.20
A metal sphere with $1 \mathrm{~m}$ radius and a surface charge density of $10 \; \mathrm{Coulombs / m}^{2}$ is enclosed in a cube of $10 \mathrm{~m}$ side. The total outward electric displacement normal to the surface of the cube is $40 \pi$ Coulombs $10 \pi$ Coulombs $5 \pi$ Couloms None of these
A metal sphere with $1 \mathrm{~m}$ radius and a surface charge density of $10 \; \mathrm{Coulombs / m}^{2}$ is enclosed in a cube of $10 \mathrm{~m}$ side. The total out...
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1158
GATE ECE 1996 | Question 1.21
In the circuit shown in the given figure $\mathrm{N}$ is a finite gain amplifier with a gain of $k$, a very large input impedance, and a very low output impedance. The input impedance of the feedback amplifier with the feedback impedance $\mathrm{Z}$ connected as shown will be $\mathrm{Z}\left(1-\frac{1}{k}\right)$ $Z(1-k)$ $\frac{\mathrm{Z}}{(k-1)}$ $\frac{Z}{(1-k)}$
In the circuit shown in the given figure $\mathrm{N}$ is a finite gain amplifier with a gain of $k$, a very large input impedance, and a very low output impedance. The in...
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1159
GATE ECE 1996 | Question 2.2
The inverse Laplace transform of the function $\frac{s+5}{(s+1)(s+3)}$ is $2 e^{-t}-e^{-3 t}$ $2 e^{-t}+e^{-3 t}$ $e^{-t}-2 e^{-3 t}$ $e^{-t}+e^{-3 t}$
The inverse Laplace transform of the function$\frac{s+5}{(s+1)(s+3)}$ is$2 e^{-t}-e^{-3 t}$$2 e^{-t}+e^{-3 t}$$e^{-t}-2 e^{-3 t}$$e^{-t}+e^{-3 t}$
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1160
GATE ECE 1996 | Question 2.3
The voltages $\mathrm{V}_{\mathrm{C} 1}, \mathrm{~V}_{\mathrm{C} 2}$, and $\mathrm{V}_{\mathrm{C} 3}$ across the capacitors in the circuit in the given figure, under steady state, are respectively. $80 \mathrm{~V}, 32 \mathrm{~V}, 48 \mathrm{~V}$ ... $20 \mathrm{~V}, 8 \mathrm{~V}, 12 \mathrm{~V}$ $20 \mathrm{~V}, 12 \mathrm{~V}, 8 \mathrm{~V}$
The voltages $\mathrm{V}_{\mathrm{C} 1}, \mathrm{~V}_{\mathrm{C} 2}$, and $\mathrm{V}_{\mathrm{C} 3}$ across the capacitors in the circuit in the given figure, under stea...
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