0 0 votes Consider the recombination process via bulk traps in a forward biased $pn$ homojunction diode. The maximum recombination rate is $U_{\text{max}}$. If the electron and the hole capture cross-sections are equal, which one of the following is $\text{FALSE}$? With all other parameters unchanged, $U_{\text{max}}$ decreases if the intrinsic carrier density is reduced. $U_{\text{max}}$ occurs at the edges of the depletion region in the device. $U_{\text{max}}$ depends exponentially on the applied bias. With all other parameters unchanged, $U_{\text{max}}$ increases if the thermal velocity of the carriers increases. Electronic Devices gate2020-ec electronic-devices + – go_editor 706 views answer comment Share Follow Add Sync Questions Print 0 reply Please log in or register to add a comment.
