retagged by
533 views
0 0 votes

A $pn$ junction solar cell of area $1.0\:cm^{2}$, illuminated uniformly with $100\:mW\:cm^{-2}$, has the following parameters: Efficiency $= 15\%$, open circuit voltage $= 0.7\:V$, fill factor $= 0.8$, and thickness $=200 \mu m$. The charge of an electron is $1.6\times 10^{-19}C$. The average optical generation rate (in $cm^{-3} s^{-1}$) is

  1. $0.84\times 10^{19}.$
  2. $5.57\times 10^{19}.$
  3. $1.04\times 10^{19}.$
  4. $83.60\times 10^{19}.$

Please log in or register to answer this question.

Answer:
Position:
Show:

Related questions

0 0 votes
0 0 answers
724
724 views
go_editor asked Feb 13, 2020
724 views
A one-sided abrupt $pn$ junction diode has a depletion capacitance $C_{D}$ of $50$ $\text{pF}$ at a reverse bias of $0.2 V$. The plot of $1/C^{2}_{D}$ versus the applied ...
0 0 votes
0 0 answers
691
691 views
go_editor asked Feb 13, 2020
691 views
Consider the recombination process via bulk traps in a forward biased $pn$ homojunction diode. The maximum recombination rate is $U_{\text{max}}$. If the electron and the...
0 0 votes
0 0 answers
586
586 views
go_editor asked Feb 13, 2020
586 views
An enhancement $\text{MOSFET}$ of threshold voltage $3\:V$ is being used in the sample and hold circuit given below. Assume that the substrate of the $\text{MOS}$ device ...
0 0 votes
0 0 answers
711
711 views
Arjun asked Feb 12, 2019
711 views
In an ideal $pn$ junction with an ideality factor of $1$ at $T=300\:K,$ the magnitude of the reverse-bias voltage required to reach $75\%$ of its reverse saturation curre...

Add Synced Question

×