Register

GATE ECE 2022 | Question: 37

• edited by
409 views
0 0 votes

Select the $\text{CORRECT}$ statement(s) regarding semiconductor devices.

  1. Electrons and holes are of equal density in an intrinsic semiconductor at equilibrium.
  2. Collector region is generally more heavily doped than Base region in a $\text{BJT}.$
  3. Total current is spatially constant in a two terminal electronic device in dark under steady state condition.
  4. Mobility of electrons always increases with temperature in Silicon beyond $300 \; \text{K}.$

Please log in or register to answer this question.

Answer:
← Previous · GATE ECE 2022 | Ques...Next → · GATE ECE 2022 | Ques...
← Previous in category · GATE ECE 2022 | Ques...Next in category → · GATE ECE 2022 | Ques...
Position:
Show:
Voting & Accepting an answer helps improve the community

Related questions

0 0 votes
0 0 answers
694
694 views
Arjun asked Feb 15, 2022
694 views
GATE ECE 2022 | Question: 6
Consider a long rectangular bar of direct bandgap $p-$type semiconductor. The equilibrium hole density is $10^{17} \; \text{cm}^{-3}$ and the intrinsic carrier concentrat...
0 0 votes
0 0 answers
793
793 views
Arjun asked Feb 15, 2022
793 views
GATE ECE 2022 | Question: 7
In a non-degenerate bulk semiconductor with electron density $n = 10^{16} \; \text{cm}^{-3},$ the value of $E_{c} – E_{Fn} = 200 \; \text{meV},$ where $E_{c}$ and $E_{Fn}...
0 0 votes
0 0 answers
720
720 views
Arjun asked Feb 15, 2022
720 views
GATE ECE 2022 | Question: 46
A $p-$type semiconductor with zero electric field is under illumination (low level injection) in steady state condition. Excess minority carrier density is zero at $x = \...
0 0 votes
0 0 answers
534
534 views
Arjun asked Feb 15, 2022
534 views
GATE ECE 2022 | Question: 15
Consider the following partial differential equation $\text{(PDE)}$$$a \frac{ \partial^{2} f(x ,y)}{\partial x^{2}} + b \frac{ \partial^{2} f(x ,y)}{\partial y^{2}} = f(x...

Add Synced Question

×