• recategorized by
671 views
1 1 vote

A CMOS inverter, designed to have a mid-point voltage $V_{1}$ equal to half of $V_{dd}.$ as shown in the figure, has the following parameters:

$V_{dd}=3V$

$\mu_{n} C_{ox}=100\: \mu A/V^{2}; V_{tn}=0.7\:V $ for $\text{nMOS}$

$\mu_{p} C_{ox}=40\: \mu A/V^{2}; \mid V_{tp} \mid=0.9\:V $ for $\text{pMOS}$

The ration of $\left(\frac{W}{L}\right)_{n}$ to $\left(\frac{W}{L}\right)_{p}$ is equal to _______ (rounded off to $3$ decimal places).

Please log in or register to answer this question.

Answer:
Position:
Show:

Related questions

0 0 votes
0 0 answers
959
959 views
Arjun asked Feb 12, 2019
959 views
A standard CMOS inverter is designed with equal rise and fall times $(\beta_{n}=\beta_{p}).$ If the width of the pMOS transistor in the inverter is increased, what would ...
0 0 votes
0 0 answers
746
746 views
Arjun asked Feb 12, 2019
746 views
The $\text{RC}$ circuit shown below has a variable resistance $R(t)$ given by the following expression:$$R(t)=R_{0}\left(1-\frac{t}{T}\right) \text{for} \:\: 0 \leq t < T...
0 0 votes
0 0 answers
719
719 views
Arjun asked Feb 12, 2019
719 views
In an ideal $pn$ junction with an ideality factor of $1$ at $T=300\:K,$ the magnitude of the reverse-bias voltage required to reach $75\%$ of its reverse saturation curre...
0 0 votes
0 0 answers
358
358 views
Arjun asked Feb 12, 2019
358 views
Consider a long-channel MOSFET with a channel length $1\:\mu m$ and width $10\: \mu m.$ The device parameters are acceptor concentration $N_{A}=5 \times 10^{16}\: cm^{-3}...

Add Synced Question

×