Consider two BJTs biased at the same collector current with area $A_1=0.2 \mu m \times 0.2 \mu m$ and $A_2 = 300 \mu m \times 300 \mu m$. Assuming that all other device parameters are identical, $kT/q=26 \: mV$, the intrinsic carrier concentration is $1 \times 10^{10} cm^{-3}$, and $q=1.6 \times 10^{-19} \:C $, the difference between the base-emitter voltages (in mV) of the two BJTs (i.e., $V_{BE1}-V_{BE2})$ is ________.