Register

Recent questions and answers in BJT and MOSFET Amplifiers

0 0 votes
1 1 answer
479
479 views
GATE ECE 2001 | Question: 1.8
The effective channel length of a MOSFET in saturation decreases with increase ingate voltagedrain voltagesource voltagebody voltage
User Avatar
0 0 votes
1 1 answer
443
443 views
GATE ECE 1999 | Question 2.9
An amplifier is assumed to have a single-pole high-frequency transfer function. The rise time of its output response to a step function input is $35\;\text{nsec}$. The up...
0 0 votes
1 1 answer
403
403 views
GATE ECE 1999 | Question 2.6
An $\text{npn}$ transistor (with $\mathrm{C}=0.3 \; \mathrm{pF}$ ) has a unity gain cutoff frequency $f_{\mathrm{T}}$ of $400 \; \mathrm{MHz}$ at a $\text{dc}$ bias curre...
1 1 vote
1 1 answer
887
887 views
GATE ECE 2025 | Question: 11
A simplified small-signal equivalent circuit of a BJT-based amplifier is given below.The small-signal voltage gain $V_{o} / V_{S}$ (in $\mathrm{V} / \mathrm{V})$ is $\_\_...
0 0 votes
0 0 answers
611
611 views
GATE ECE 2025 | Question: 12
The ideal BJT in the circuit given below is biased in the active region with a $\beta$ of $100$.If $I_{B}$ is $10 \: \mu \mathrm{A}$, then $V_{C E}$ (in Volts, rounded of...
User Avatar
0 0 votes
0 0 answers
1.0k
1.0k views
GATE ECE 2025 | Question: 20
Which of the following statements is/are TRUE with respect to ideal MOSFET-based DC-coupled single-stage amplifiers having finite load resistors?The common-gate amplifier...
User Avatar
0 0 votes
0 0 answers
351
351 views
GATE ECE 2025 | Question: 33
The identical MOSFETs $M_{1}$ and $M_{2}$ in the circuit given below are ideal and biased in the saturation region. $\mathrm{M}_{1}$ and $\mathrm{M}_{2}$ have a transcond...
User Avatar
0 0 votes
0 0 answers
509
509 views
GATE ECE 2025 | Question: 37
In the circuit shown, the identical transistors $\text{Q1}$ and $\text{Q2}$ are biased in the active region with $\beta=120$. The Zener diode is in the breakdown region w...
User Avatar
1 1 vote
1 1 answer
1.9k
1.9k views
GATE ECE 2009 | Question: 58
Consider the CMOS circuit shown, where the gate voltage $V_{G}$ of the $\text{n-MOSFET}$ is increased from zero, while the gate voltage of the $\text{p-MOSFET}$ is kept c...
0 0 votes
0 0 answers
2.0k
2.0k views
GATE ECE 2024 | Question: 8
​​​​For the closed loop amplifier circuit shown below, the magnitude of open loop low frequency small signal voltage gain is $40$. All the transistors are biased in satur...
1 1 vote
0 0 answers
1.5k
1.5k views
GATE ECE 2024 | Question: 21
In the given circuit, the current $I_{x}$ (in $m A$ ) is $\_\_\_\_\_\_\_\_$.
0 0 votes
0 0 answers
1.4k
1.4k views
GATE ECE 2024 | Question: 42
Which of the following statements is/are true for a $\text{BJT}$ with respect to its DC current gain $\beta$ ?Under high-level injection condition in forward active mode,...
2 2 votes
0 0 answers
1.5k
1.5k views
GATE ECE 2024 | Question: 54
An $\text{NMOS}$ transistor operating in the linear region has $I_{D S}$ of $5 \mu \mathrm{A}$ at $V_{D S}$ of $0.1 \mathrm{~V}$. Keeping $V_{G S}$ constant, the $V_{D S}...
0 0 votes
1 1 answer
1.1k
1.1k views
GATE ECE 2004 | Question: 44
The neutral base width of a bipolar transistor, biased in the active region, is $0.5 \; \mu \mathrm{m}$. The maximum electron concentration and the diffusion constant in ...
0 0 votes
0 0 answers
1.7k
1.7k views
GATE ECE 2023 | Question: 11
In the circuit shown below, $\text{V}_1$ and $\text{V}_2$ are bias voltages. Based on input and output impedances, the circuit behaves as avoltage controlled voltage sour...
0 0 votes
0 0 answers
530
530 views
GATE ECE 1997 | Question 2.1
In the $\text{BJT}$ amplifier shown in the figure is the transistor is based in the forward active region. Putting a capacitor across $R_E$ will decrease the voltage gain...
0 0 votes
0 0 answers
372
372 views
GATE ECE 1997 | Question 2.2
A cascade amplifier stage is equivalent toa common emitter stage followed by a common base stagea common base stage followed by an emitter followeran emitter follower sta...
0 0 votes
0 0 answers
579
579 views
GATE ECE 1997 | Question 2.4
In a common emitter $\text{BJT}$ amplifier, the maximum usable supply voltage is limited byAvalanche breakdown of Base-Emitter junctionCollector-Base breakdown voltage wi...
0 0 votes
0 0 answers
412
412 views
GATE ECE 1997 | Question 8
The transistor in the circuit shown in the figure is so biased ($dc$ biasing network is not shown) that the $dc$ collecter current $I_{c}=1 \mathrm{~mA}$. Supply is $V_{c...
0 0 votes
0 0 answers
259
259 views
GATE ECE 1997 | Question 13
In the cascade amplifier circuit shown in the figure is determine the values of $R_{1}, R_{2}$ and $R_{L}$ such that the quiescent current through the transistors is $1 \...
0 0 votes
0 0 answers
321
321 views
GATE ECE 1997 | Question 15
Given an $\text{NMOS}$ circuit as shown in the figure isThe specifications of the circuit are$\mathrm{V}_{\mathrm{DD}}=10 \mathrm{~V} ; \beta=\mathrm{K}=\mu_{n} \mathrm{C...
0 0 votes
0 0 answers
308
308 views
GATE ECE 1997 | Question 16
Find Static Noise-Margins for a $\text{BJT}$ inverter shown in the figure is Transistor used is an $n-p-n$ type with specifications as follows$\qquad \beta_{F}=70$$ \qqua...
0 0 votes
0 0 answers
282
282 views
GATE ECE 1997 | Question 17
For a typical $n-p-n$ transistor, as shown in the figure we have the following data available$\mathrm{W}_{\mathrm{C}}=20 \mu \mathrm{m}$ and Collcetor doping $=5 \times 1...
0 0 votes
0 0 answers
459
459 views
GATE ECE 2000 | Question 1.4
In the differential amplifer of the figure, if the source resistance of the current source $I_{E E}$ is infinite, then the common-mode gain iszeroinfiniteindeterminate$\f...
0 0 votes
0 0 answers
434
434 views
GATE ECE 2000 | Question 1.6
Introducing a resistor in the emitter of a common amplifier stabilizes the $\text{dc}$ operating point against variations inonly the temperatureonly the $\beta$ of the tr...
0 0 votes
0 0 answers
635
635 views
GATE ECE 2000 | Question 1.7
The current gain of a bipolar transistor drops at high frequencies because oftransistor capacitanceshigh current effects in the baseparasitic inductive elementsthe Early ...
0 0 votes
0 0 answers
444
444 views
GATE ECE 2000 | Question 2.5
In the circuit of the figure, assume that the transistor is in active region. It has a large $\beta$ and its base-emitter voltage is $0.7 \mathrm{~V}$. The value of $\mat...
0 0 votes
0 0 answers
384
384 views
GATE ECE 2000 | Question 11
For the amplifier of given figure, $I_{C}=1.3 \mathrm{~mA}$, $R_{C}=2 \; \mathrm{k} \Omega, R_{\mathrm{E}}=500 \; \Omega, \mathrm{V}_{\mathrm{T}}=\mathrm{T} / q=26 \; \ma...
0 0 votes
0 0 answers
266
266 views
GATE ECE 2000 | Question 13
The figure shows a common base amplifier.(a) Write expressions for the time-constants associated with the capacitors, $C_{B}$ and $C_{S}$.(b) What is the approximate lowe...
0 0 votes
0 0 answers
261
261 views
GATE ECE 2000 | Question 14
For the $\text{CMOS}$ monostable multivibrator of given figure, $\mathrm{R}=50 \mathrm{~kW}, \mathrm{C}=0.01 \; \mu \mathrm{F}, \mathrm{V}_{\mathrm{DD}}=5 \mathrm{~V}$, a...
0 0 votes
0 0 answers
377
377 views
GATE ECE 1999 | Question 1.5
The early effect in a bipolar junction transistor is caused byfast turn-onfast turn-offlarge collector-base reverse biaslarge emitter-base forward bias
0 0 votes
0 0 answers
363
363 views
GATE ECE 1999 | Question 1.8
In the cascade amplifier shown in the given figure, if the common - emitter stage $\left(Q_{1}\right)$ has a transconductance $\mathrm{gm}_{1}$, and the common base stage...
0 0 votes
0 0 answers
434
434 views
GATE ECE 1999 | Question 1.9
Crossover distortion behaviour is characteristic ofClass $\text{A}$ output stageClass $\text{B}$ output stageClass $\mathrm{AB}$ output stageCommon - base output stage
0 0 votes
0 0 answers
380
380 views
GATE ECE 1999 | Question 1.11
A Darlington emitter - follower circuit is sometimes used in the output stage of a $\text{TTL}$ gate in order toincrease its $\mathrm{I}_{\mathrm{OL}}$reduce its $\mathrm...
0 0 votes
0 0 answers
249
249 views
GATE ECE 1999 | Question 2.5
An $n$-channel $\text{JEFT}$ has $\mathrm{I}_{\mathrm{DSS}}=2 \mathrm{~mA}$ and $\mathrm{V}_{p}=-4 \mathrm{~V}$. Its transconductance $\mathrm{gm}$ (in milliohm) for an a...
Help get things started by asking a question.