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Recent questions tagged bjt-and-mosfet-amplifiers
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GATE ECE 2014 Set 4 | Question: 38
A BJT in a common-base configuration is used to amplify a signal received by a $50 \Omega$ antenna. Assume $kT/q=25 \: mV$. The value of the collector bias current (in mA) required to match the input impedance of the amplifier to the impedance of the antenna is __________.
A BJT in a common-base configuration is used to amplify a signal received by a $50 \Omega$ antenna. Assume $kT/q=25 \: mV$. The value of the collector bias current (in mA...
Milicevic3306
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Mar 26, 2018
Analog Circuits
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GATE ECE 2014 Set 4 | Question: 39
For the common collector amplifier shown in the figure, the BJT has high $\beta$, negligible $V_{CE(sat)}$, and $V_{BE}=0.7 \: V$. The maximum undistorted peak-to-peak output voltage $v_o$ (in Volts) is __________
For the common collector amplifier shown in the figure, the BJT has high $\beta$, negligible $V_{CE(sat)}$, and $V_{BE}=0.7 \: V$. The maximum undistorted peak-to-peak ou...
Milicevic3306
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Mar 26, 2018
Analog Circuits
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3
GATE ECE 2014 Set 1 | Question: 39
For the amplifier shown in the figure, the BJT parameters are $V_{BE} = 0.7\:V, \beta = 200,$ and thermal voltage $V_{T} = 25\:mV.$ The voltage gain $(v_{0}/v_{i})$ of the amplifier is ______.
For the amplifier shown in the figure, the BJT parameters are $V_{BE} = 0.7\:V, \beta = 200,$ and thermal voltage $V_{T} = 25\:mV.$ The voltage gain $(v_{0}/v_{i})$ of th...
Milicevic3306
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Mar 25, 2018
Analog Circuits
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4
GATE ECE 2017 Set 1 | Question: 41
For the DC analysis of the Common-Emitter amplifier shown, neglect the base current and assume that the emitter and collector currents are equal. Given that $V_{T}=25mV,V_{BE}=0.7V$, and the BJT output resistance $r_{o}$ is practically infinite. Under these conditions, the midband voltage gain magnitude, $A_{v}=\mid v_{o}/v_{i} \mid $, V/V is ____________.
For the DC analysis of the Common-Emitter amplifier shown, neglect the base current and assume that the emitter and collector currents are equal. Given that $V_{T}=25mV,V...
admin
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Nov 17, 2017
Analog Circuits
gate2017-ec-1
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5
GATE ECE 2017 Set 1 | Question: 41
For the circuit shown, assume that the NMOS transistor is in saturation. Its threshold voltage $V_{tn}=1V$ and its transconductance parameter $\mu_{n}C_{ox}\big(\frac{W}{L}\big)=1 \: mA/V^{2}$.Neglect channel length modulation and body bias effects. Under these conditions, the drain current $I_{D}$ in $mA$ is ________.
For the circuit shown, assume that the NMOS transistor is in saturation. Its threshold voltage $V_{tn}=1V$ and its transconductance parameter $\mu_{n}C_{ox}\big(\frac{W}{...
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Nov 17, 2017
Analog Circuits
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