Recent questions in P-N junction

A Silicon PN junction at a temperature of $20^{\circ} \mathrm{C}$ has a reverse saturation current of $10$ picoAmperes $(\mathrm{pA})$. The reverse saturation current at ...

A Silicon PN junction diode under reverse bias has depletion region of width $10 \; \mu \mathrm{m}$. The relative permittivity of Silicon,$\varepsilon_{r}=11.7$ and the p...

The $p$ – type substrate in a conventional $p n$ – junction isolated integrated circuit should be connected tonowhere, i.e. left floatinga $dc$ ground potentialthe most p...

The values of voltage $\left(\mathrm{V}_{\mathrm{D}}\right)$ across a tunnel-diode corresponding to peak and valley currents are $\text{V}_{\text{P}}$ and $\text{V}_{\tex...

In a $p^{+} n$ junction diode under reverse bias, the magnitude of electric field is maximum atthe edge of the depletion region on the $p$-sidethe edge of the depletion r...

Group I lists four types of $p-n$ junction diodes. Match each device in Group I with one of the options in Group II to indicate the bias condition of that device in its n...

Consider a silicon $\text{p-n}$ junction at room temperature having the following parameters:Doping on the $n$-side $=1 \times 10^{17} \mathrm{~cm}^{-3}$Depletion width o...

The small signal capacitances of an abrupt $P_1-n$ junction is $1 \mathrm{nF} / \mathrm{Cm}^2$ at zero bias. If the built in voltage is $1$ volt, the capacitance at a rev...