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GATE ECE 2021 | Question: 11
If $(1235)_{x}\:=\:(3033)_{y}$, where $x$ and $y$ indicate the bases of the corresponding numbers, then $x\:=\:7$ and $y\:=\:5$ $x\:=\:8$ and $y\:=\:6$ $x\:=\:6$ and $y\:=\:4$ $x\:=\:9$ and $y\:=\:7$
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gateec-2021
digital-circuits
number-system
number-representation
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0
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2
GATE ECE 2021 | Question: 12
Addressing of a $32K\:\times\:16$ memory is realized using a single decoder. The minimum number of $\text{AND}$ gates required for the decoder is $2^{8}$ $2^{32}$ $2^{15}$ $2^{19}$
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104
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gateec-2021
digital-circuits
combinational-circuits
decoders
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0
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3
GATE ECE 2021 | Question: 31
The propagation delays of the $\text{XOR}$ gate, $\text{AND}$ gate and multiplexer $\text{(MUX)}$ in the circuit shown in the figure are $4\:ns$, $2\:ns$ and $1\:ns$, respectively. If all the inputs $\text{P, Q, R, S and T}$ are applied simultaneously and held constant, the maximum propagation delay of the circuit is $3\:ns$ $5\:ns$ $6\:ns$ $7\:ns$
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combinational-circuits
multiplexers
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4
GATE ECE 2021 | Question: 46
The propagation delay of the exclusive$-\text{OR}$ ($\text{XOR}$) gate in the circuit in the figure is $3\:ns$. The propagation delay of all the flip-flops is assumed to be zero. The clock ($\text{Clk}$ ... of triggering clock edges after which the flip-flop outputs $Q_{2}Q_{1}Q_{0}$ becomes $1\; 0\; 0$ (in integer) is
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5
GATE ECE 2020 | Question: 6
A single crystal intrinsic semiconductor is at a temperature of $300$ $\text{K}$ with effective density of states for holes twice that of electrons. The thermal voltage is $26$ mV. The intrinsic Fermi level is shifted from mid-bandgap energy level by $18.02 \: meV$ $9.01 \: meV$ $13.45 \: meV$ $26.90 \: meV$
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gate2020-ec
digital-circuits
semiconductor
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6
GATE ECE 2020 | Question: 10
The figure below shows a multiplexer where $S_{1}$ and $S{2}$ are the select lines, $I_{0}$ to $I_{3}$ are the input data lines, $\text{EN}$ is the enable line, and $\text{F(P, Q, R)}$ is the output. $\text{F}$ is $PQ+\overline{Q}R.$ $PQ+Q\overline{R}.$ $P\overline{Q}R+\overline{P}Q.$ $\overline{Q}+PR.$
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7
GATE ECE 2020 | Question: 19
In an $8085$ microprocessor, the number of address lines required to access a $16$ K byte memory bank is ____________ .
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0
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8
GATE ECE 2020 | Question: 20
A $10$-bit D/A converter is calibrated over the full range from $0$ to $10$ V. If the input to the D/A converter is $13 \:A$ (in hex), the output ( rounded off to three decimal places) is __________ $V$.
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9
GATE ECE 2020 | Question: 32
The band diagram of a $p$-type semiconductor with a band-gap of $1$ eV is shown. Using this semiconductor, a $\text{MOS}$ capacitor having $V_{TH}$ of $-0.16 V$, ${C}'_{ox}$ of $100\:nF/cm^{2}$ and a metal work function of $3.87 \: eV$ is fabricated. There is no charge ... $1.70\times 10^{-8}$ $0.52\times 10^{-8}$ $1.41\times 10^{-8}$ $0.93\times 10^{-8}$
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10
GATE ECE 2020 | Question: 50
For the components in the sequential circuit shown below, $t_{pd}$ is the propagation delay, $t_{\text{setup}}$ is the setup-time, and $t_{\text{hold}}$ is the hold time. The maximum clock frequency (rounded off to the nearest integer), at which the given circuit can operate reliably, is _________$\text{MHz}$.
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gate2020-ec
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flip-flops
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0
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11
GATE ECE 2019 | Question: 14
In the circuit shown, what are the values of $F$ for $EN=0$ and $EN=1,$ respectively? $\text{0 and D}$ $\text{Hi-Z and D}$ $\text{0 and 1}$ $\text{Hi-Z and}$ $ \overline{D}$
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Feb 12, 2019
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110
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gate2019-ec
digital-circuits
logic-gates
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0
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12
GATE ECE 2019 | Question: 15
In the circuit shown, $A$ and $B$ are the inputs and $F$ is the output. What is the functionality of the circuit? Latch XNOR SRAM Cell XOR
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gate2019-ec
digital-circuits
logic-gates
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13
GATE ECE 2016 Set 3 | Question: 10
The $I-V$ characteristics of three types of diodes at the room temperature, made of semiconductors $X, Y$ and $Z$, are shown in the figure. Assume that the diodes are uniformly doped and identical in all respects except their materials. If $E_{gX}$,$E_{gY}$ ... $E_{gX}=E_{gY}=E_{gZ}$ $E_{gX}<E_{gY}<E_{gZ}$ no relationship among these band gaps exists.
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gate2016-ec-3
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semiconductor
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14
GATE ECE 2016 Set 3 | Question: 16
In an $8085$ microprocessor, the contents of the accumulator and the carry flag are $A7$ (in hex) and $0$, respectively. If the instruction $RLC$ is executed, then the contents of the accumulator (in hex) and the carry flag, respectively, will be $4E$ and $0$ $4E$ and $1$ $4F$ and $0$ $4F$ and $1$
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15
GATE ECE 2016 Set 3 | Question: 17
The logic functionality realized by the circuit shown below is $OR$ $XOR$ $NAND$ $AND$
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16
GATE ECE 2016 Set 3 | Question: 18
The minimum number of $2$-input $NAND$ gates required to implement a $2$-input $XOR$ gate is $4$ $5$ $6$ $7$
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17
GATE ECE 2016 Set 3 | Question: 43
Following is the K-map of a Boolean function of five variables $P,Q,R,S$ and $X$ ... $\overline{Q}\:S\:X+\;Q\:\overline{S}\:\overline{X}$ $\overline{Q}\:S+\;Q\overline{S}$
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k-map
min-sum-of-products-form
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0
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18
GATE ECE 2016 Set 3 | Question: 44
For the circuit shown in the figure, the delays of NOR gates, multiplexers and inverters are $2$ ns, $1.5$ ns and $1$ ns, respectively. If all the inputs $P, Q, R, S$ and $T$ are applied at the same time instant, the maximum propagation delay (in ns) of the circuit is _________
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19
GATE ECE 2016 Set 3 | Question: 45
For the circuit shown in the figure, the delay of the bubbled NAND gate is $2\:ns$ and that of the counter is assumed to be zero. If the clock (Clk) frequency is $1\:GHz$, then the counter behaves as a $\text{mod}-5\:\text{counter}$ $\text{mod}-6\:\text{counter}$ $\text{mod}-7\:\text{counter}$ $\text{mod}-8\:\text{counter}$
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20
GATE ECE 2016 Set 2 | Question: 17
Assume that all the digital gates in the circuit shown in the figure are ideal, the resistor $R=10\Omega$ and the supply voltage is $5\:V$. The $D$ flip-flops $D_{1} \:, D_{2} \:, D_{3} \:, D_{4}$ and $D_{5}$ are initialized with ... $0$, respectively. The clocks has a $30\%$ duty cycle. The average power dissipated (in $mW$) in the resistor $R$ is _________
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21
GATE ECE 2016 Set 2 | Question: 18
A $4:1$ multiplexer is to be used for generating the output carry of a full adder. $A$ and $B$ are the bits to be added while $C_{in}$ is the input carry and $C_{out}$ is the output carry. $A$ and $B$ are to be used as the select bits with $A$ being the more significant select ... $I_{3}=C_{in}$ $I_{0}=0, I_{1}=C_{in},I_{2}=1$ and $I_{3}=C_{in}$
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22
GATE ECE 2016 Set 2 | Question: 42
An $8$ Kbyte ROM with an active low Chip Select input $\left (\overline{CS}\right )$ is to be used in an $8085$ microprocessor based system. The ROM should occupy the address range $1000H$ to $2FFFH$. The address lines are designated as $A_{15}$ to $A_{0}$, ... $\overline{A_{15}}+ \overline{A_{14}}+A_{13} \cdot A_{12}$
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23
GATE ECE 2016 Set 2 | Question: 43
In an $N$ bit flash ADC, the analog voltage is fed simultaneously to $2^{N}-1$ comparators. The output of the comparators is then encoded to a binary format using digital circuits. Assume that the analog voltage source $V_{in}$ ... maximum sampling rate? $1$ megasamples per second $6$ megasamples per second $64$ megasamples per second $256$ megasamples per second
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24
GATE ECE 2016 Set 2 | Question: 44
The state transition diagram for a finite state machine with states $A$, $B$ and $C$, and binary inputs $X$, $Y$ and $Z$, is shown in the figure. Which one of the following statements is correct? Transitions from State ... State $B$ are ambiguously defined. Transitions from State $C$ are ambiguously defined. All of the state transitions are defined unambiguously.
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25
GATE ECE 2016 Set 1 | Question: 11
A small percentage of impurity is added to an intrinsic semiconductor at $300 \: K$. Which one of the following statements is true for the energy band diagram shown in the following figure? Intrinsic semiconductor doped with pentavalent ... atoms to form $p$-type semiconductor. Intrinsic semiconductor doped with trivalent atoms to form $p$-type semiconductor.
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semiconductor
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26
GATE ECE 2016 Set 1 | Question: 12
Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET): As channel length reduces,OFF-state current increases. As channel length reduces,output resistance increases. As channel length reduces,threshold voltage remains constant. As channel ... . Which of the above statements are INCORRECT? P and Q P and S Q and R R and S
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semiconductor
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27
GATE ECE 2016 Set 1 | Question: 43
The functionality implemented by the circuit below is $2$-to-$1$ multiplexer $4$-to-$1$ multiplexer $7$-to-$1$ multiplexer $6$-to-$1$ multiplexer
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28
GATE ECE 2016 Set 1 | Question: 44
In an $8085$ system, a PUSH operation requires more clock cycles than a POP operation. Which one of the following options is the correct reason for this? For POP, the data transceivers remain in the same direction as for instruction fetch ... in the stack pointer. Order of registers has to be interchanged for a PUSH operation, whereas POP uses their natural order.
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29
GATE ECE 2015 Set 3 | Question: 15
In the circuit shown, diodes $D_{1}, D_{2}$ and $D_{3}$ are ideal, and the inputs $E_{1} , E_{2}$ and $E_{3}$ are $“0\: V”$ for logic $‘0’$ and $“10\: V”$ for logic $‘1’$. What logic gate does the circuit represent? $3$-input OR gate $3$-input NOR gate $3$-input AND gate $3$-input XOR gate
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30
GATE ECE 2015 Set 3 | Question: 16
Which one of the following $8085$ microprocessor programs correctly calculates the product of two $8$-bit numbers stored in registers $B$ and $C?$ ...
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31
GATE ECE 2015 Set 3 | Question: 37
A universal logic gate can implement any Boolean function by connecting sufficient number of them appropriately. Three gates are shown. Which one of the following statements is TRUE? Gate $1$ is a universal gate Gate $2$ is a universal gate Gate $3$ is a universal gate None of the gates shown is a universal gate
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32
GATE ECE 2015 Set 3 | Question: 38
An SR latch is implemented using TTL gates as shown in the figure. The set and reset pulse inputs are provided using the push-button switches. It is observed that the circuit fails to work as desired. The SR latch can be made functional by changing NOR gates to NAND gates inverters to buffers NOR gates to NAND gates and inverters to buffers $5\: V$ to ground
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33
GATE ECE 2015 Set 3 | Question: 49
Two sequences $x_{1}[n]$ and $x_{2}[n]$ have the same energy. Suppose $x_{1}[n]=\alpha\: 0.5 ^{n}\:u[n],$ where $\alpha$ is a positive real number and $u[n]$is the unit step sequence. Assume ݊$x_{2}[n]= \begin{cases} \sqrt{1.5}& \text{for } n = 0,1 \\ 0 &\text{otherwise.} \end{cases}$ Then the value of $\alpha$ is _________.
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34
GATE ECE 2015 Set 2 | Question: 14
In the figure shown, the output ܻ$Y = AB + \overline{C}\:\:\overline{D}$ is required to be ܻ The gates $G1$ and $G2$ must be, respectively, NOR, OR OR, NAND NAND, OR AND,NAND
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35
GATE ECE 2015 Set 2 | Question: 15
In an $8085$ microprocessor, which one of the following instructions changes the content of the accumulator? MOV B, M PCHL RNZ SBI BEH
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36
GATE ECE 2015 Set 2 | Question: 16
A mod-$n$ counter using a synchronous binary up-counter with synchronous clear input is shown in the figure. The value of $n$ is _______.
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37
GATE ECE 2015 Set 2 | Question: 36
A function of Boolean variables $X, Y$ and $Z$ is expressed in terms of the min-terms as $F(X, Y, Z) = \Sigma (1, 2, 5, 6, 7)$ Which one of the product of sums given below is equal to the function $F(X, Y, Z)?$ ...
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38
GATE ECE 2015 Set 2 | Question: 37
The figure shows a binary counter with synchronous clear input. With the decoding logic shown, the counter works as a mod-$2$ counter mod-$4$ counter mod-$5$ counter mod-$6$ counter
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39
GATE ECE 2015 Set 2 | Question: 38
A $1$-to-$8$ demultiplexer with data input $D_{in}$ , address inputs $S_{0}, S_{1}, S_{2}$ (with $S_{0}$ as the LSB) and $\overline{Y_{0}}$ to $\overline{Y_{7}}$ as the eight demultiplexed outputs, is to be designed using two $2$-to-$4$ ... $D_{in}, S_{0}, S_{1}, S_{2} $ $D_{in}, S_{2}, S_{0}, S_{1}$
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40
GATE ECE 2015 Set 1 | Question: 14
In an 8085 microprocessor, the shift registers which store the result of an addition and the overflow bit are, respectively B and F A and F H and F A and C
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