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The intrinsic carrier concentration of a semiconductor is $2.5 \times 10^{16} / \mathrm{m}^{3}$ at $300 \: \mathrm{K}$.If the electron and hole mobilities are $0.15 \math...

Which of the following statements is/are true for a $\text{BJT}$ with respect to its DC current gain $\beta$ ?Under high-level injection condition in forward active mode,...

For a $\text{MOS}$ capacitor, $\text{V}_{\mathrm{fb}}$ and $\text{V}_{\mathrm{t}}$ are the flat-band voltage and the threshold voltage, respectively. The variation of the...

The following circuit(s) representing a lumped element equivalent of an infinitesimal section of a transmission line is/are

A linear system could be a composition ofTwo non-linear systemsa non-causal non-linear system and a linear systema time varying non-linear system and a time varying linea...

(1) Wave tiltUnder-water propagation(2) Faraday RotationGround wave propagationSpace wave propagationIonospheric propagation

Introducing a resistor in the emitter of a common amplifier stabilizes the $\text{dc}$ operating point against variations inonly the temperatureonly the $\beta$ of the tr...

Two coaxial cables $1$ and $2$ are filled with different dielectric constants $\varepsilon_{r 1}$ and $\varepsilon_{r 2}$ respectively. The ratio of the wavelengths in th...

Negative feedback in an amplifierreduces gainincreases frequency and phase distortionsreduces bandwidthincreases noise

The equivalent of the block diagram in the figure, given in

A system of three electric charges lying in a straight line is in equilibrium. Two of the charges are positive with magnitudes $Q$ and $2 Q$, and are $50 \mathrm{~cm}$ ap...

If the transistor in the figure is in saturation, then$\mathrm{I}_{\mathrm{C}}$ is always equal to $\beta_{\text{dc}} \text{I}_{\text{B}}$$\mathrm{I}_{\mathrm{C}}$ is alw...

The phase velocity for the $\mathrm{TE}_{10}$ – mode in an air-filled rectangular waveguide isless than $c$equal to $c$greater than $c$none of the above( $c$ is the veloc...

A zener diode regulator in the figure is to be designed to meet the specifications: $I_{L}=10 \mathrm{~mA}$, $\mathrm{V}_{0}=10 \mathrm{~V}$ and $\mathrm{V}_{m}$ varies f...

Consider the following assembly language program.$\begin{array}{rll} \text { MVI } & \text { B,87H } \\ \text { MOV } & \text { A, B } \\ \text { START : JMP } & \text { ...

Consider a linear array of two half-wave dipoles $\mathrm{A}$ and $\text{B}$ as shown in the figure is. The dipoles are $\frac{\lambda}{4}$ apart and are excited in such ...

The electron and hole concentrations in a intrinsic semiconductor are $n_i$ and $p_i$ respectively. When doped with a $p$-type material, these change to $n$ and $p$, resp...

A high-Q quartz crystal exhibits series resonance at the frequency $\omega_{s}$ and parallel resonance at the frequency $\omega_{p}$. Then$\omega_{s}$ is very close to, b...

The depth of penetration of wave in a lossy dielectric increases with increasingconductivitypermeabilitywavelengthpermittivity

The polarisation of wave with electric field vector$\overrightarrow{\mathrm{E}}=\mathrm{E}_{0} \; e^{j(\hat{\rho}(\omega t+\beta z)}\left(\vec{a}_{x}+\vec{a}_{y}\right)$ ...

The radiation resistance of a circular loop of one turn is $0.01 \; \Omega$. The radiation resistance of five turns of such a loop will be$0.002 \; \Omega$$0.01 \; \Omega...

An antenna in free space receives $2 \; \mu \mathrm{W}$ of power when the incident electric field is $20 \mathrm{~m} \; \mathrm{V} / \mathrm{m} \; \mathrm{rms}$. The effe...

The bandgap of silicon at $300 \mathrm{~K}$ is$1.36 \; \mathrm{eV}$$1.10 \; \mathrm{eV}$$0.80 \; \mathrm{eV}$$0.67 \; \mathrm{eV}$

The intrinsic carrier concentration of silicon sample at $300 \mathrm{~K}$ is $1.5 \times 10^{16} / \mathrm{m}^3$. If after doping, the number of majority carriers is $5 ...

Medium $1$ has the electrical permittivity $\varepsilon_{1}=1.5 \varepsilon_{0}$ farad $/ \mathrm{m}$ and occupies the region to the left of $x=0$ plane. Medium $2$ has t...

The impurity commonly used for realizing the base region of a silicon $n-p-n$ transistor isGalliumIndiumBoronPhosphorus

Consider an abrupt $p$-junction. Let $V_{\text {in }}$ be the built-in potential of this junction and $\mathrm{V}_{\mathrm{R}}$ be the applied reverse bias. If the juncti...

It is desired to multiply the numbers $0 \mathrm{AH}$ by $0 \mathrm{BH}$ and store the result in the accumulator. The numbers are available in registers $B$ and $C$ respe...

A plane electromagnetic wave propagating in free space in incident normally on a large slab of loss-less, non magnetic, dielectric material with $\varepsilon>\varepsilon_...