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GATE ECE 2026 | Question: 55
Consider the ideal diodes $\text{D1}$ and $\text{D2}$ as shown in the Figure with cut-in voltage $V_{\gamma}=0$ Volt and $v_{i}(t)$ is in Volt.The maximum voltage (Volt) ...
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547
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GATE ECE 2025 | Question: 47
All the diodes in the circuit given below are ideal.Which of the following plots is/are correct when $V_{I}$ (in Volts) is swept from $-M$ to $M$?
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1 1 answer
539
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GATE ECE 2025 | Question: 51
The diode in the circuit shown below is ideal. The input voltage (in Volts) is given by $V_{I}=10 \sin 100 \pi t$, where time $t$ is in seconds.The time duration (in $\ma...
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596
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GATE ECE 2025 | Question: 53
An ideal p-n junction germanium diode has a reverse saturation current of $10 \mu \mathrm{~A}$ at $300 \: \mathrm{ K}$.The voltage (in Volts, rounded off to two decimal p...
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GATE ECE 2024 | Question: 13
​In the circuit shown, the $n: 1$ step-down transformer and the diodes are ideal. The diodes have no voltage drop in forward biased condition. If the input voltage (in Vo...
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GATE ECE 2023 | Question: 30
In the circuit shown below, $D_1$ and $D_2$ are silicon diodes with cut-in voltage of $0.7 \mathrm{~V}$. $\mathrm{V}_{\mathrm{IN}}$ and $\mathrm{V}_{\mathrm{OUT}}$ are in...
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315
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GATE ECE 1997 | Question 3.3
In the circuit of in the figure is the current $i_{D}$ through the ideal diode (zero cut in voltage and forward resistance) equals$0 \mathrm{~A}$$4 \mathrm{~A}$$1 \mathrm...
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437
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GATE ECE 1997 | Question 4.5
A half wave rectifier uses a diode with a forward resistance $\text{Rf}$. The voltage is $\text{V}_\text{m} \sin \omega t$ and the load resistance is $\text{R}_\text{L}$....
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364
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GATE ECE 2000 | Question 10
(a) For given figure, Plot $v_{o}$ under steady state conditions, with and without $C$. Assume that the diode is ideal.(b) Design a circuit using two ideal diodes, one re...
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423
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GATE ECE 2001 | Question: 6
For the circuit shown in the figure. $D_{1}$ and $D_{2}$ are indentical diodes with ideality factor of unity. The thermal voltage $V_{T}=25 \; \mathrm{mV}$.Calculate $\ma...
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355
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GATE ECE 2002 | Question: 1.5
In given figure a silicon diode is carrying a constant current of $1 \mathrm{~mA}$. When the temperature of the diode is $20^{\circ} \mathrm{C}, \mathrm{V}_{\mathrm{D}}$ ...
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485
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GATE ECE 2002 | Question: 2.7
A zener diode regulator in the figure is to be designed to meet the specifications: $I_{L}=10 \mathrm{~mA}$, $\mathrm{V}_{0}=10 \mathrm{~V}$ and $\mathrm{V}_{m}$ varies f...
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312
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GATE ECE 2002 | Question: 6
A triangular voltage waveform $V_{i}(t)$ first figure applied at the input to the circuit of second figure. Assume the diodes to be ideal. Determine the output $\mathrm{V...
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303
303 views
GATE ECE 1998 | Question 1.14
The static characteristic of an adequately forward biased $p-n$ junction is a straight line, if the plot is of$\log I $ vs. $\log V$$\log I$ vs. $V$$I$ vs. $\log V$$I$ vs...
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490
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GATE ECE 1998 | Question 1.38
For full wave rectification, a four diode bridge rectifier is claimed to have the following advantages over a two diode circuit :(1) less expensive transformer,(2) smalle...
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396
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GATE ECE 1998 | Question 2.14
For small signal $a.c$. operation, a practical forward biased diode can be modelled asa resistance and a capacitance in seriesan ideal diode and resistance in parallela r...
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320
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GATE ECE 1998 | Question: 5
Draw the transfer characteristic of the circuit of the figure assuming both $D_{1}$ and $D_{2}$ to be ideal.How would the characteristic change if $D_{2}$ is ideal, but $...
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GATE ECE 2003 | Question: 12
The circuit shown in the figure is best described as abridge rectifierring modulatorfrequency discriminatoryvoltage doubler
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324
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GATE ECE 2003 | Question: 41
At $300 \mathrm{~K}$, for a diode current of $1 \mathrm{~mA}$, a certain germanium diode requires a forward bias of $0.1435 \mathrm{~V}$, whereas a certain silicon diode ...
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389
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GATE ECE 2003 | Question: 48
The output voltage of the regulated power supply shown in the figure is$3 \mathrm{~V}$$6 \mathrm{~V}$$9 \mathrm{~V}$$12 \mathrm{~V}$
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