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41
GATE ECE 2015 Set 1 | Question: 12
In the circuit shown below, the Zener diode is ideal and the Zener voltage is $6$ V. The output voltage $V_o$ (in volts) is ________.
In the circuit shown below, the Zener diode is ideal and the Zener voltage is $6$ V. The output voltage $V_o$ (in volts) is ________.
Milicevic3306
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Electronic Devices
gate2015-ec-1
numerical-answers
zener-diode
electronic-devices
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42
GATE ECE 2016 Set 1 | Question: 36
Consider a silicon $p-n$ junction with a uniform acceptor doping concentration of $10^{17} cm^{-3}$ on the $p$-side and a uniform donor doping concentration of $10^{16}cm^{-3}$ on the $n$ ... $nC \: cm^{-2}$) in the depletion region on the $p$-side is _________
Consider a silicon $p-n$ junction with a uniform acceptor doping concentration of $10^{17} cm^{-3}$ on the $p$-side and a uniform donor doping concentration of $10^{16}cm...
Milicevic3306
16.0k
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106
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Milicevic3306
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Mar 27, 2018
Electronic Devices
gate2016-ec-1
numerical-answers
electronic-devices
p-n-junction
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43
GATE ECE 2015 Set 2 | Question: 34
In a MOS capacitor with an oxide layer thickness of $10\: nm,$ the maximum depletion layer thickness is $100\: nm.$ The permittivities of the semiconductor and the oxide layer are $\varepsilon_{s}$ and $\varepsilon_{ox}$ respectively. ... the ratio of the maximum capacitance to the minimum capacitance of this MOS capacitor is ________.
In a MOS capacitor with an oxide layer thickness of $10\: nm,$ the maximum depletion layer thickness is $100\: nm.$ The permittivities of the semiconductor and the oxide ...
Milicevic3306
16.0k
points
104
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Milicevic3306
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Mar 27, 2018
Electronic Devices
gate2015-ec-2
numerical-answers
electronic-devices
mos-capacitor
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44
GATE ECE 2015 Set 1 | Question: 13
In the circuit shown, the switch SW is thrown from position $A$ to position $B$ at time $t=0$. The energy (in $\mu J$) taken from the $3$ V source to charge the $0.1 \: \mu F$ capacitor from $0$ V t $3$ V is $0.3$ $0.45$ $0.9$ $3$
In the circuit shown, the switch SW is thrown from position $A$ to position $B$ at time $t=0$. The energy (in $\mu J$) taken from the $3$ V source to charge the $0.1 \: \...
Milicevic3306
16.0k
points
103
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Milicevic3306
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Mar 27, 2018
Electronic Devices
gate2015-ec-1
electronic-devices
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45
GATE ECE 2016 Set 1 | Question: 39
Consider a silicon sample at $T = 300 \: K$, with a uniform donor density $N_d = 5 \times 10 ^{16} cm^{-3}$ , illuminated uniformly such that the optical generation rate is $G_{opt}=1.5 \times 10^{20} cm^{-3}s^{-1}$ throughout the sample. The incident radiation is turned ... $3.73 \times 10^{11}cm^{-3}$ $7.5 \times 10^{13}cm^{-3}$ and $4.12 \times 10^{11}cm^{-3}$
Consider a silicon sample at $T = 300 \: K$, with a uniform donor density $N_d = 5 \times 10 ^{16} cm^{-3}$ , illuminated uniformly such that the optical generation rate ...
Milicevic3306
16.0k
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102
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Milicevic3306
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Mar 27, 2018
Electronic Devices
gate2016-ec-1
electronic-devices
intrinsic-and-extrinsic-silicon
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46
GATE ECE 2015 Set 2 | Question: 33
A dc voltage of $10\: V$ is applied across an $n$-type silicon bar having a rectangular cross-section and a length of $1\:cm$ as shown in figure. The donor doping concentration $N_{D}$ and the mobility of electrons $\mu_{n}$ ... The average time $(\text{in}\: \mu s)$ taken by the electrons to move from one end of the bar to other end is ________.
A dc voltage of $10\: V$ is applied across an $n$-type silicon bar having a rectangular cross-section and a length of $1\:cm$ as shown in figure. The donor doping concent...
Milicevic3306
16.0k
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102
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Milicevic3306
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Mar 27, 2018
Electronic Devices
gate2015-ec-2
numerical-answers
electronic-devices
intrinsic-and-extrinsic-silicon
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47
GATE ECE 2015 Set 2 | Question: 10
A piece of silicon is doped uniformly with phosphorous with a doping concentration of $10^{16}/cm^{3}.$ The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is $1.6 \times 10^{-19} \:C.$ The conductivity $\text{(in S } cm^{-1})$ of the silicon sample at $300\:K$ is _______.
A piece of silicon is doped uniformly with phosphorous with a doping concentration of $10^{16}/cm^{3}.$ The expected value of mobility versus doping concentration for sil...
Milicevic3306
16.0k
points
99
views
Milicevic3306
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Mar 27, 2018
Electronic Devices
gate2015-ec-2
numerical-answers
electronic-devices
intrinsic-and-extrinsic-silicon
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48
GATE ECE 2016 Set 1 | Question: 37
Consider an $n$-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of $1.8$ V. Assume that $\frac{W}{L}=4$, $\mu_NC_{ox}= 70 \times 10^{-6} AV^{-2}$ ... channel length modulation parameter is $0.09 \: V^{-1}$. In the saturation region, the drain conductance (in micro siemens) is _________
Consider an $n$-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of $1.8$ V. Assume that $\frac{W}{L}=4$, $\mu_NC_{ox}= 70...
Milicevic3306
16.0k
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93
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Milicevic3306
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Mar 27, 2018
Electronic Devices
gate2016-ec-1
numerical-answers
electronic-devices
mosfet
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49
GATE ECE 2016 Set 2 | Question: 31
In the circuit shown in the figure, the magnitude of the current (in amperes) through $R_{2}$ is ____
In the circuit shown in the figure, the magnitude of the current (in amperes) through $R_{2}$ is ____
Milicevic3306
16.0k
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92
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Milicevic3306
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Mar 27, 2018
Electronic Devices
gate2016-ec-2
numerical-answers
electronic-devices
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50
GATE ECE 2015 Set 1 | Question: 35
For a silicon diode with long P and N regions, the accepter and donor impurity concentrations are $1 \times 10^{17} \:cm^{-3}$ and $1 \times 10^{15} \: cm^{-3}$, respectively. The lifetimes of electrons in P region and holes in N ... $nA/cm^2$) injected from P region to N region is __________.
For a silicon diode with long P and N regions, the accepter and donor impurity concentrations are $1 \times 10^{17} \:cm^{-3}$ and $1 \times 10^{15} \: cm^{-3}$, respecti...
Milicevic3306
16.0k
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92
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Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-1
numerical-answers
electronic-devices
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51
GATE ECE 2016 Set 2 | Question: 30
In the given circuit, each resistor has a value equal to $1\Omega$. What is the equivalent resistance across the terminals $a$ and $b$? $1/6 \: \Omega$ $1/3 \: \Omega$ $9/20 \: \Omega$ $8/15 \: \Omega$
In the given circuit, each resistor has a value equal to $1\Omega$. What is the equivalent resistance across the terminals $a$...
Milicevic3306
16.0k
points
91
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Milicevic3306
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Mar 27, 2018
Electronic Devices
gate2016-ec-2
electronic-devices
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52
GATE ECE 2013 | Question: 50
Consider the following figure The current $I_{S}$ in $\text{Amps}$ in the voltage source, and voltage $V_{S}$ in Volts across the current source respectively, are $13, − 20$ $8, − 10$ $− 8, 20$ $− 13, 20$
Consider the following figure The current $I_{S}$ in $\text{Amps}$ in the voltage source, and voltage $V_{S}$ in Volts across the current source respectively, are$13, −...
Milicevic3306
16.0k
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176
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Milicevic3306
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Mar 25, 2018
Electronic Devices
gate2013-ec
electronic-devices
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53
GATE ECE 2015 Set 3 | Question: 30
In the circuit shown, the current $I$ flowing through the $50\;\Omega$ resistor will be zero if the value of capacitor $C (\text{in}\: \mu F)$ is ______.
In the circuit shown, the current $I$ flowing through the $50\;\Omega$ resistor will be zero if the value of capacitor $C (\text{in}\: \mu F)$ is ______.
Milicevic3306
16.0k
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89
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Milicevic3306
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Mar 27, 2018
Electronic Devices
gate2015-ec-3
numerical-answers
electronic-devices
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54
GATE ECE 2016 Set 3 | Question: 40
For the circuit shown in the figure, $R_1=R_2=R_3=1\;\Omega,\;L=1\:\mu H$ and $C=1\:\mu F$. If the input $V_{in}=\cos(10^6t)$, then the overall voltage gain $(V_{out}/V_{in})$ of the circuit is _________
For the circuit shown in the figure, $R_1=R_2=R_3=1\;\Omega,\;L=1\:\mu H$ and $C=1\:\mu F$. If the input $V_{in}=\cos(10^6t)$, then the overall voltage gain $(V_{out}/V_{...
Milicevic3306
16.0k
points
84
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Milicevic3306
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Mar 27, 2018
Electronic Devices
gate2016-ec-3
numerical-answers
electronic-devices
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55
GATE ECE 2016 Set 2 | Question: 35
A voltage $V_{G}$ is applied across a $MOS$ capacitor with metal gate and $p$-type silicon substrate at $T=300$ $K$. The inversion carrier density (in number of carriers per unit area) for $V_{G}= 0.8$ $V$ is $2\times 10^{11} cm^{-2}.$ For $V_{G}= 1.3$ $V$, the ... $6.0\times 10^{11}cm^{-2}$ $7.2\times 10^{11}cm^{-2}$ $8.4\times 10^{11}cm^{-2}$
A voltage $V_{G}$ is applied across a $MOS$ capacitor with metal gate and $p$-type silicon substrate at $T=300$ $K$. The inversion carrier density (in number of carriers ...
Milicevic3306
16.0k
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83
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Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-2
mos-capacitor
electronic-devices
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56
GATE ECE 2015 Set 1 | Question: 33
The built-in potential of an abrupt p-n junction is $0.75$ V. If its junction capacitance $(C_J)$ at a reverse bias $(V_R)$ of $1.25 \: V$ is $5$ pF, the value of $C_J$ (in pF) when $V_R = 7.25 \: V$ is ________.
The built-in potential of an abrupt p-n junction is $0.75$ V. If its junction capacitance $(C_J)$ at a reverse bias $(V_R)$ of $1.25 \: V$ is $5$ pF, the value of $C_J$ (...
Milicevic3306
16.0k
points
83
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Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-1
numerical-answers
electronic-devices
p-n-junction
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57
GATE ECE 2016 Set 2 | Question: 13
Assume that the diode in the figure has $V_{on}=0.7 \:V$, but it otherwise ideal. The magnitude of the current $i_{2}$ in mA) is equal to _________
Assume that the diode in the figure has $V_{on}=0.7 \:V$, but it otherwise ideal. The magnitude of the current $i_{2}...
Milicevic3306
16.0k
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80
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Milicevic3306
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Mar 27, 2018
Electronic Devices
gate2016-ec-2
numerical-answers
electronic-devices
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58
GATE ECE 2015 Set 1 | Question: 10
A silicon sample is uniformly doped with donor type impurities with a concentration of $10^{16} / cm^3$. The electron and hole mobilities in the sample are $1200 \: cm^2/V-s$ and $400 \: cm^2/V-s$ respectively. Assume complete ionization of impurities. ... an electron is $1.6 \times 10^{-19} \:C$. The resistivity of the sample (in $\Omega - cm$) is ___________.
A silicon sample is uniformly doped with donor type impurities with a concentration of $10^{16} / cm^3$. The electron and hole mobilities in the sample are $1200 \: cm^2/...
Milicevic3306
16.0k
points
80
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Milicevic3306
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Mar 27, 2018
Electronic Devices
gate2015-ec-1
numerical-answers
electronic-devices
silicon
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59
GATE ECE 2014 Set 3 | Question: 36
An ideal MOS capacitor has boron doping-concentration of $10^{15}cm^{-3}$ in the substrate. When a gate voltage is applied, a depletion region of width $0.5$ $\mu m$ is formed with a surface (channel) potential of $0.2$ $V$. Given that ... silicon dioxide are $12$ and $4$, respectively, the peak electric field (in $V/\mu m$) in the oxide region is _______________.
An ideal MOS capacitor has boron doping-concentration of $10^{15}cm^{-3}$ in the substrate. When a gate voltage is applied, a depletion region of width $0.5$ $\mu m$ is f...
Milicevic3306
16.0k
points
158
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Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
numerical-answers
electronic-devices
mos-capacitor
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60
GATE ECE 2016 Set 1 | Question: 41
A $p-i-n$ photodiode of responsivity $0.8 \: A/W$ is connected to the inverting input of an ideal opamp as shown in the figure, $+V_{CC}= 15 V, \: – V_{CC} = – 15 V$, Load resistor $R_L=10k\Omega$. If $10 \mu W$ of power is incident on the photodiode, then the value of the photocurrent(in $\mu A$) through the load is _________
A $p-i-n$ photodiode of responsivity $0.8 \: A/W$ is connected to the inverting input of an ideal opamp as shown in the figure, $+V_{CC}= 15 V, \: – V_{CC} = – 15 V$...
Milicevic3306
16.0k
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79
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Milicevic3306
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Mar 27, 2018
Electronic Devices
gate2016-ec-1
numerical-answers
electronic-devices
photo-diode
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61
GATE ECE 2014 Set 3 | Question: 12
In the circuit shown, the $PNP$ transistor has $\mid V_{BE} \mid = 0.7 \:V$ and $\beta = 50$. Assume that $R_{B}= 100 \: k \Omega$. For $V_{0}$ to be $5 \: V$, the value of $R_{C}$ (in $k \Omega$) is ________
In the circuit shown, the $PNP$ transistor has $\mid V_{BE} \mid = 0.7 \:V$ and $\beta = 50$. Assume that $R_{B}= 100 \: k \Omega$. For $V_{0}$ to be $5 \: V$, the value...
Milicevic3306
16.0k
points
153
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Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
numerical-answers
electronic-devices
p-n-p-transistor
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62
GATE ECE 2015 Set 3 | Question: 55
A coaxial capacitor of inner radius $1\: mm$ and outer radius $5\: mm$ has a capacitance per unit length of $172\: pF/m.$ If the ratio of outer radius to inner radius is doubled, the capacitance per unit length $\text{(in}\: pF/m)$ is ________.
A coaxial capacitor of inner radius $1\: mm$ and outer radius $5\: mm$ has a capacitance per unit length of $172\: pF/m.$ If the ratio of outer radius to inner radius is ...
Milicevic3306
16.0k
points
74
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-3
numerical-answers
electronic-devices
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63
GATE ECE 2014 Set 1 | Question: 9
In the figure, assume that the forward voltage drops of the $PN$ diode $D_{1}$ and Schottky diode $D_{2}$ are $0.7\: V$ and $0.3\: V,$ ... is ON and $D_{2}$ is OFF both $D_{1}$ and $D_{2}$ are OFF $D_{1}$ is OFF and $D_{2}$ is ON
In the figure, assume that the forward voltage drops of the $PN$ diode $D_{1}$ and Schottky diode $D_{2}$ are $0.7\: V$ and $0.3\: V,$ respectively. If ON denotes conduct...
Milicevic3306
16.0k
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153
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Milicevic3306
asked
Mar 25, 2018
Electronic Devices
gate2014-ec-1
electronic-devices
p-n-junction-diode
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64
GATE ECE 2016 Set 1 | Question: 51
The current density in a medium is given by ${\overrightarrow J= \frac{400 \sin\theta}{2\pi(r^2+4)} \hat {a}_r \: Am^{-2}}$ The total current and the average current density flowing through the portion of a spherical surface $r = 0.8 \: m$ ... $18.73 A, \: 13.65 Am^{-2}$ $12.86 A, \: 9.23 Am^{-2}$ $10.28 A, \: 7.56 Am^{-2}$
The current density in a medium is given by $${\overrightarrow J= \frac{400 \sin\theta}{2\pi(r^2+4)} \hat {a}_r \: Am^{-2}}$$The total current and the average current den...
Milicevic3306
16.0k
points
72
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Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-1
electronic-devices
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65
GATE ECE 2014 Set 1 | Question: 35
The doping concentrations on the $p$-side and $n$-side of a silicon diode are $1\times 10^{16}\:cm^{-3}$ and $1\times 10^{17}\:cm^{-3},$ respectively. A forward bias of $0.3\:V$ is applied to the diode. At $T = 300\:K,$ ... $1\times 10^{16}\:cm^{-3}$ $1\times 10^{17}\:cm^{-3}$ $2.25\times 10^{6}\:cm^{-3}$
The doping concentrations on the $p$-side and $n$-side of a silicon diode are $1\times 10^{16}\:cm^{-3}$ and $1\times 10^{17}\:cm^{-3},$ respectively. A forward bias of $...
Milicevic3306
16.0k
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129
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Milicevic3306
asked
Mar 25, 2018
Electronic Devices
gate2014-ec-1
electronic-devices
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66
GATE ECE 2014 Set 2 | Question: 36
When a silicon diode having a doping concentration of $N_{A}= 9\times 10^{16}cm^{-3}$ on $p$-side and $N_{D}= 1 \times 10^{16}cm^{-3}$ on $n$-side is reverse biased, the total depletion width is found to be $3 \mu$ ... $0.3 \mu m$ and $0.42 \times 10^{5} V/cm$ $2.1 \mu m$ and $0.42 \times 10^{5} V/cm$
When a silicon diode having a doping concentration of $N_{A}= 9\times 10^{16}cm^{-3}$ on $p$-side and $N_{D}= 1 \times 10^{16}cm^{-3}$ on $n$-side is reverse biased, the...
Milicevic3306
16.0k
points
119
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Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-2
electronic-devices
intrinsic-and-extrinsic-silicon
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67
GATE ECE 2013 | Question: 10
In the circuit shown below what is the output voltage $(V_{\text{out}})$ if a silicon transistor $Q$ and an ideal op-amp are used? $-15\: V$ $-0.7\: V$ $+0.7\: V$ $+15\: V$
In the circuit shown below what is the output voltage $(V_{\text{out}})$ if a silicon transistor $Q$ and an ideal op-amp are used?$-15\: V$$-0.7\: V$$+0.7\: V$$+15\: V$
Milicevic3306
16.0k
points
119
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Milicevic3306
asked
Mar 25, 2018
Electronic Devices
gate2013-ec
electronic-devices
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68
GATE ECE 2013 | Question: 31
The following arrangement consists of an ideal transformer and an attenuator which attenuates by a factor of $0.8.$ An ac voltage $V_{WX1} = 100V$ is applied across $WX$ to get an open circuit voltage $V_{YZ1}$ across $YZ.$ Next, an ac voltage $V_{YZ2}= 100V$ is ... , $125/100$ and $80/100$ $100/100$ and $80/100$ $100/100$ and $100/100$ $80/100$ and $80/100$
The following arrangement consists of an ideal transformer and an attenuator which attenuates by a factor of $0.8.$ An ac voltage $V_{WX1} = 100V$ is applied across $WX$ ...
Milicevic3306
16.0k
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117
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Milicevic3306
asked
Mar 25, 2018
Electronic Devices
gate2013-ec
electronic-devices
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69
GATE ECE 2014 Set 3 | Question: 35
The slope of the $I_{D}$ vs. $V_{GS}$ curve of an n-channel MOSEFT in linear regime is $10^{-3}\Omega ^{-1}$ at $V_{DS}= 0.1 \: V$. For the same device, neglecting channel length modulation, the slope of the $\sqrt{I_{D} }$ vs. $V_{GS}$ curve (in $\sqrt{A}/V$) under saturation regime is approximately _________.
The slope of the $I_{D}$ vs. $V_{GS}$ curve of an n-channel MOSEFT in linear regime is $10^{-3}\Omega ^{-1}$ at $V_{DS}= 0.1 \: V$. For the same device, neglecting channe...
Milicevic3306
16.0k
points
107
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
numerical-answers
electronic-devices
mosfet
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70
GATE ECE 2014 Set 4 | Question: 9
In the figure, $\text{ln }(\rho _i)$ is plotted as a function of $1/T$, where $\rho_i$ is the intrinsic resistivity of silicon, $T$ is the temperature, and the plot is almost linear. The slope of the line can be used to estimate band gap ... the sum of electron and hole mobility in silicon $(\mu _n + \mu _p)^{-1}$ intrinsic carrier concentration of silicon $(n_i)$
In the figure, $\text{ln }(\rho _i)$ is plotted as a function of $1/T$, where $\rho_i$ is the intrinsic resistivity of silicon, $T$ is the temperature, and the plot is al...
Milicevic3306
16.0k
points
106
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-4
electronic-devices
intrinsic-and-extrinsic-silicon
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71
GATE ECE 2014 Set 2 | Question: 32
In the figure shown, the capacitor is initially uncharged. Which one of the following expressions describes the current $I(t)$ (in mA) for $t > 0$? $I(t)= \frac{5}{3}(1-e^{-t/ \tau}), \tau= \frac{2}{3} \text{msec} \\$ ... $I(t)= \frac{5}{2}(1-e^{-t/\tau}), \tau= 3 \text{msec}$
In the figure shown, the capacitor is initially uncharged. Which one of the following expressions describes the current $I(t)$ (in mA) for $t 0$? $I(t)= ...
Milicevic3306
16.0k
points
104
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-2
electronic-devices
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72
GATE ECE 2014 Set 2 | Question: 8
A silicon bar is doped with donor impurities $N_{D}= 2.25 \times 10^{15} \text{atoms} / cm^{3}$. Given the intrinsic carrier concentration of silicon at $T = 300 \: K$ is $n_{i}= 1.5 \times 10^{10} cm^{-3}.$ Assuming complete impurity ionization, the equilibrium electron and ... $n_{0}=2.25\times 10^{15}cm^{-3}, \: p_{0}= 1\times 10^{5}cm^{-3}$
A silicon bar is doped with donor impurities $N_{D}= 2.25 \times 10^{15} \text{atoms} / cm^{3}$. Given the intrinsic carrier concentration of silicon at $T = 300 \: K$ is...
Milicevic3306
16.0k
points
103
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-2
electronic-devices
intrinsic-and-extrinsic-silicon
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73
GATE ECE 2013 | Question: 51
Consider the following figure The current in the $1\Omega$ resistor in $\text{Amps}$ is $2$ $3.33$ $10$ $12$
Consider the following figure The current in the $1\Omega$ resistor in $\text{Amps}$ is$2$$3.33$ $10$ $12$
Milicevic3306
16.0k
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106
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Milicevic3306
asked
Mar 25, 2018
Electronic Devices
gate2013-ec
electronic-devices
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74
GATE ECE 2014 Set 1 | Question: 8
When the optical power incident on a photodiode is $10\:\mu W$ and the responsivity is $0.8\: A/ W,$ the photocurrent generated $(\text{in} \:\mu A)$ is_______.
When the optical power incident on a photodiode is $10\:\mu W$ and the responsivity is $0.8\: A/ W,$ the photocurrent generated $(\text{in} \:\mu A)$ is_______.
Milicevic3306
16.0k
points
100
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Milicevic3306
asked
Mar 25, 2018
Electronic Devices
gate2014-ec-1
numerical-answers
electronic-devices
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75
GATE ECE 2013 | Question: 34
The small-signal resistance $(i.e., dV_{B}/dI_{D})$ in $k\Omega$ offered by the $n$-channel $MOSFET\: M$ shown in the figure below, at a bias point of $V_{B} = 2\: V$ is (device data for $M:$ ... $V_{TN} = 1\: V,$ and neglect body effect and channel length modulation effects) $12.5$ $25$ $50$ $100$
The small-signal resistance $(i.e., dV_{B}/dI_{D})$ in $k\Omega$ offered by the $n$-channel $MOSFET\: M$ shown in the figure below, at a bias point of $V_{B} = 2\: V$ is ...
Milicevic3306
16.0k
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105
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Milicevic3306
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Mar 25, 2018
Electronic Devices
gate2013-ec
electronic-devices
mosfet
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–
0
votes
0
answers
76
GATE ECE 2013 | Question: 5
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces superior quality oxide with a higher growth rate inferior quality oxide with a higher growth rate inferior quality oxide with a lower growth rate superior quality oxide with a lower growth rate
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces superior quality oxide with a higher growth rate inf...
Milicevic3306
16.0k
points
103
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Milicevic3306
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Mar 25, 2018
Electronic Devices
gate2013-ec
electronic-devices
oxidation
+
–
0
votes
0
answers
77
GATE ECE 2014 Set 3 | Question: 31
In the circuit shown in the figure, the value of node voltage $V_{2}$ is $22+j$ $2$ $V$ $2 +j$ $22$ $V$ $22 -j$ $2$ $V$ $2 -j$ $22$ $V$
In the circuit shown in the figure, the value of node voltage $V_{2}$ is $22+j$ $2$ $V$ $2 +j$ $22$ $V$$22 -j$ $2...
Milicevic3306
16.0k
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96
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Milicevic3306
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Mar 26, 2018
Electronic Devices
gate2014-ec-3
electronic-devices
node-voltage
+
–
0
votes
0
answers
78
GATE ECE 2014 Set 3 | Question: 39
For the MOSFET $M_{1}$ shown in the figure, assume $W/L= 2$, $V_{DD}= 2.0 \: V$, $\mu _{n}C_{ox}= 100\mu A/V^{2}$ and $V_{TH}= 0.5 \: V$. The transistor $M_{1}$ switches from saturation region to linear region when $V_{in}$(in $Volts$) is ____________.
For the MOSFET $M_{1}$ shown in the figure, assume $W/L= 2$, $V_{DD}= 2.0 \: V$, $\mu _{n}C_{ox}= 100\mu A/V^{2}$ and $V_{TH}= 0.5 \: V$. The transistor $M_{1}$ switches ...
Milicevic3306
16.0k
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95
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Milicevic3306
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Mar 26, 2018
Electronic Devices
gate2014-ec-3
numerical-answers
electronic-devices
mosfet
+
–
0
votes
0
answers
79
GATE ECE 2014 Set 3 | Question: 8
In MOSFET fabrication, the channel length is defined during the process of isolation oxide growth channel stop implantation poly-silicon gate patterning lithography step leading to the contact pads
In MOSFET fabrication, the channel length is defined during the process ofisolation oxide growthchannel stop implantationpoly-silicon gate patterninglithography step lead...
Milicevic3306
16.0k
points
95
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
electronic-devices
analog-circuits
mosfet
+
–
0
votes
0
answers
80
GATE ECE 2014 Set 2 | Question: 7
In the figure shown, the ideal switch has been open for a long time. If it is closed at t = 0, then the magnitude of the current (in mA) through the $4k \Omega$ resistor at $t= 0^{+}$ is ________.
In the figure shown, the ideal switch has been open for a long time. If it is closed at t = 0, then the magnitude of the current (in mA) through the $4k \Omega$ resistor ...
Milicevic3306
16.0k
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94
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Milicevic3306
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Mar 26, 2018
Electronic Devices
gate2014-ec-2
numerical-answers
electronic-devices
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