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81
GATE ECE 2022 | Question: 10
The ideal long channel $n\text{MOSFET}$ and $p\text{MOSFET}$ devices shown in the circuits have threshold voltages of $1 \; \text{V}$ and $ - 1 \; \text{V},$ respectively. The $\text{MOSFET}$ substrates are connected to their respective sources. Ignore leakage currents and assume that the ... $V_{1} = 4 \; \text{V}, \quad V_{2} = - 5 \; \text{V}$
The ideal long channel $n\text{MOSFET}$ and $p\text{MOSFET}$ devices shown in the circuits have threshold voltages of $1 \; \text{V}$ and $ – 1 \; \text{V},$ respective...
Arjun
6.6k
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303
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Feb 15, 2022
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82
GATE ECE 2023 | Question: 9
For a $\text{MOS}$ capacitor, $\text{V}_{\mathrm{fb}}$ and $\text{V}_{\mathrm{t}}$ are the flat-band voltage and the threshold voltage, respectively. The variation of the depletion width $\left(\mathrm{W}_{\mathrm{dep}}\right)$ for varying gate voltage $\left(\text{V}_g\right)$ is best represented by
For a $\text{MOS}$ capacitor, $\text{V}_{\mathrm{fb}}$ and $\text{V}_{\mathrm{t}}$ are the flat-band voltage and the threshold voltage, respectively. The variation of the...
admin
46.4k
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302
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admin
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May 20, 2023
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gateece-2023
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83
GATE ECE 2008 | Question: 28
In the Taylor series expansion of $\exp (x)+\sin (x)$ about the point $x=\pi$, the coefficient of $(x-\pi)^{2}$ is $\exp (\pi)$ $0.5 \exp (\pi)$ $\exp (\pi)+1$ $\exp (\pi)-1$
In the Taylor series expansion of $\exp (x)+\sin (x)$ about the point $x=\pi$, the coefficient of $(x-\pi)^{2}$ is$\exp (\pi)$$0.5 \exp (\pi)$$\exp (\pi)+1$$\exp (\pi)-1$...
admin
46.4k
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Sep 17, 2022
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84
GATE ECE 2022 | Question: 7
In a non-degenerate bulk semiconductor with electron density $n = 10^{16} \; \text{cm}^{-3},$ the value of $E_{c} - E_{Fn} = 200 \; \text{meV},$ where $E_{c}$ and $E_{Fn}$ denote the bottom of the conduction band energy and electron Fermi level energy, ... given options, is ____________. $226 \; \text{meV}$ $174 \; \text{meV}$ $218 \; \text{meV}$ $182 \; \text{meV}$
In a non-degenerate bulk semiconductor with electron density $n = 10^{16} \; \text{cm}^{-3},$ the value of $E_{c} – E_{Fn} = 200 \; \text{meV},$ where $E_{c}$ and $E_{F...
Arjun
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85
GATE ECE 2024 | Question: 44
Let $F_{1}, F_{2}$, and $F_{3}$ be functions of $(x, y, z)$. Suppose that for every given pair of points $A$ and $B$ in space, the line integral $\int_{C}\left(F_{1} \mathrm{~d} x+F_{2} \mathrm{~d} y+F_{3} \mathrm{~d} z\right)$ evaluates to ...
Let $F_{1}, F_{2}$, and $F_{3}$ be functions of $(x, y, z)$. Suppose that for every given pair of points $A$ and $B$ in space, the line integral $\int_{C}\left(F_{1} \mat...
admin
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Feb 16
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vector-analysis
scalar-function
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86
GATE ECE 2011 | Question: 16
The root locus plot for a system is given below. The open loop transfer function corresponding to this plot is given by $G(s) H(s)=k \frac{s(s+1)}{(s+2)(s+3)}$ $G(s) H(s)=k \frac{(s+1)}{s(s+2)(s+3)^2}$ $G(s) H(s)=k \frac{1}{s(s-1)(s+2)(s+3)}$ $G(s) H(s)=k \frac{(s+1)}{s(s+2)(s+3)}$
The root locus plot for a system is given below. The open loop transfer function corresponding to this plot is given by$G(s) H(s)=k \frac{s(s+1)}{(s+2)(s+3)}$$G(s) H(s)=k...
admin
46.4k
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Sep 3, 2022
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87
GATE ECE 2023 | Question: 16
Consider a system with input $x(t)$ and output $y(t)=x\left(e^{t}\right)$. The system is Causal and time invariant. Non-causal and time varying. Causal and time varying. Non-causal and time invariant.
Consider a system with input $x(t)$ and output $y(t)=x\left(e^{t}\right)$. The system isCausal and time invariant.Non-causal and time varying.Causal and time varying.Non-...
admin
46.4k
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May 20, 2023
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88
GATE ECE 2024 | Question: 43
Consider a system $S$ represented in state space as \[ \frac{d x}{d t}=\left[\begin{array}{ll} 0 & -2 \\ 1 & -3 \end{array}\right] x+\left[\begin{array}{l} 1 \\ 0 \end{array}\right] r, y=\left[\begin{array}{ll} 2 & -5 \end{array}\ ...
Consider a system $S$ represented in state space as\[\frac{d x}{d t}=\left[\begin{array}{ll}0 & -2 \\1 & -3\end{array}\right] x+\left[\begin{array}{l}1 \\0\end{array}\rig...
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Feb 16
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transfer-function
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89
GATE ECE 2008 | Question: 39
A certain system has transfer function $G(s)=\dfrac{s+8}{s^{2}+\alpha s-4}$, where $\alpha$ is a parameter. Consider the standard negative unity feedback configuration as shown below. Which of the following statements is true? The closed loop ... , the closed loop system is stable. The closed loop system is stable for all values of $\alpha$, both positive and negative.
A certain system has transfer function $G(s)=\dfrac{s+8}{s^{2}+\alpha s-4}$, where $\alpha$ is a parameter. Consider the standard negative unity feedback configuration as...
admin
46.4k
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admin
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Sep 17, 2022
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gate2008-ec
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GATE ECE 2024 | Question: 42
Which of the following statements is/are true for a $\text{BJT}$ with respect to its DC current gain $\beta$ ? Under high-level injection condition in forward active mode, $\beta$ will decrease with increase in the magnitude of collector current. ... in active region. A higher value of $\beta$ will lead to a lower value of the collector-to-emitter breakdown voltage.
Which of the following statements is/are true for a $\text{BJT}$ with respect to its DC current gain $\beta$ ?Under high-level injection condition in forward active mode,...
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46.4k
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Feb 16
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bipolar-junction-transistor
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GATE ECE 2023 | Question: 26
A random variable $\mathrm{X}$, distributed normally as $\mathrm{N(0,1)}$ undergoes the transformation $\mathrm{Y}=\mathrm{h}(\mathrm{X})$, given in the figure. The form of the probability density function of $\mathrm{Y}$ is (In the options given below, $a, b, c$ are non-zero ... $a \delta(y+2)+b \delta(y)+c \delta(y-2)+g(y)$ $a \delta(y+2)+b \delta(y-2)+g(y)$
A random variable $\mathrm{X}$, distributed normally as $\mathrm{N(0,1)}$ undergoes the transformation$\mathrm{Y}=\mathrm{h}(\mathrm{X})$, given in the figure. The form o...
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GATE ECE 2024 | Question: 53
A non-degenerate n-type semiconductor has $5 \%$ neutral dopant atoms. Its Fermi level is located at $0.25 \mathrm{eV}$ below the conduction band $\left(E_{C}\right)$ and the donor energy level $\left(E_{D}\right)$ has a degeneracy of $2$. Assuming the thermal voltage to ... $E_{C}$ and $E_{D}$ (in $\mathrm{eV}$, rounded off to two decimal places) is $\_\_\_\_\_\_\_$.
A non-degenerate n-type semiconductor has $5 \%$ neutral dopant atoms. Its Fermi level is located at $0.25 \mathrm{eV}$ below the conduction band $\left(E_{C}\right)$ and...
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doping
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GATE ECE 2023 | Question: 45
The value of the integral $\iint_R \text{xy dx dy}$ over the region $R$, given in the figure, __________ is (rounded off to the nearest integer).
The value of the integral $\iint_R \text{xy dx dy}$ over the region $R$, given in the figure, __________ is (rounded off to the nearest integer).
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TIFR ECE 2023 | Question: 3
Let \[ \mathcal{P}=\left\{(x, y): x+y \geq 1,2 x+y \geq 2, x+2 y \geq 2,(x-1)^{2}+(y-1)^{2} \leq 1\right\} . \] Compute \[ \min _{(x, y) \in \mathcal{P}} 2 x+3 y \] $2$ $3$ $4$ $6$ None of the above
Let\[\mathcal{P}=\left\{(x, y): x+y \geq 1,2 x+y \geq 2, x+2 y \geq 2,(x-1)^{2}+(y-1)^{2} \leq 1\right\} .\]Compute\[\min _{(x, y) \in \mathcal{P}} 2 x+3 y\]$2$$3$$4$$6$N...
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Mar 14, 2023
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GATE ECE 2021 | Question: 34
A digital transmission system uses a ($7,4$) systematic linear Hamming code for transmitting data over a noisy channel. If three of the message-codeword pairs in this code ($\text{m}_{i}$ ; $\text{c}_{i}$), where $\text{c}_{i}$ is the ... $\text{valid codeword}$ in this code? $1101001$ $1011010$ $0001011$ $0110100$
A digital transmission system uses a ($7,4$) systematic linear Hamming code for transmitting data over a noisy channel. If three of the message-codeword pairs in this cod...
Arjun
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Feb 19, 2021
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GATE ECE 2005 | Question: 3
A fair dice is rolled twice. The probability that an odd number will follow an even number is $\frac{1}{2}$ $\frac{1}{6}$ $\frac{1}{3}$ $\frac{1}{4}$
A fair dice is rolled twice. The probability that an odd number will follow an even number is$\frac{1}{2}$$\frac{1}{6}$$\frac{1}{3}$$\frac{1}{4}$
admin
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Sep 22, 2022
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GATE ECE 2021 | Question: 5
Consider two $16$-point sequences $x\left [ n \right ]$ and $h\left [ n \right ]$. Let the linear convolution of $x\left [ n \right ]$ and $h\left [ n \right ]$ be denoted by $y\left [ n \right ]$, while $z\left [ n \right ]$ denotes the $16$-point inverse discrete Fourier ... $k=0,1,2,,15$ $k=0$ $k=15$ $\text{k=0 and k=15}$
Consider two $16$-point sequences $x\left [ n \right ]$ and $h\left [ n \right ]$. Let the linear convolution of $x\left [ n \right ]$ and $h\left [ n \right ]$ be denot...
Arjun
6.6k
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Feb 19, 2021
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GATE ECE 2007 | Question: 9
The electron and hole concentrations in an intrinsic semiconductor are $n_i$ per $\mathrm{cm}^3$ at $300 \mathrm{~K}$. Now, if acceptor impurities are introduced with a concentration of $N_A$ per $\mathrm{cm}^3$ (where $N_A \gg n_i$ ), the electron concentration per $\mathrm{cm}^3$ at $300 \mathrm{~K}$ will be $n_{i}$ $n_i+N_A$ $N_A-n_{i}$ $\frac{n_i^2}{N_A}$
The electron and hole concentrations in an intrinsic semiconductor are $n_i$ per $\mathrm{cm}^3$ at $300 \mathrm{~K}$. Now, if acceptor impurities are introduced with a c...
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Sep 19, 2022
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GATE ECE 2008 | Question: 22
The driving point impedance of the following network is given by $Z(s)=\frac{0.2 s}{s^{2}+0.1 s+2}$. The component values are $\begin{array}{lll} \mathrm{L}=5 \mathrm{~H}, & \mathrm{R}=0.5 \; \Omega, & \mathrm{C}=0.1 \mathrm{~F} \end{array}$ ...
The driving point impedance of the following networkis given by $Z(s)=\frac{0.2 s}{s^{2}+0.1 s+2}$. The component values are$\begin{array}{lll} \mathrm{L}=5 \mathrm{~H}, ...
admin
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Sep 17, 2022
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100
GATE ECE 1991 | Question 1.5
The pole-zero pattern of a certain filter is shown in the figure below. The filter must be of the following type. low pass high pass all pass band pass
The pole-zero pattern of a certain filter is shown in the figure below. The filter must be of the following type.low passhigh passall passband pass
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265
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Sep 4, 2022
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gate1991-ec
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GATE ECE 2022 | Question: 2
Consider a system of linear equations $Ax = b,$ where $A =\begin{bmatrix} 1 & – \sqrt{2} & 3 \\ – 1 & \sqrt{2} & – 3 \end{bmatrix}, \quad b = \begin{bmatrix} 1 \\ 3 \end{bmatrix}.$ This system of equations admits ______________. a unique solution for $x$ infinitely many solutions for $x$ no solutions for $x$ exactly two solutions for $x$
Consider a system of linear equations $Ax = b,$ where$A =\begin{bmatrix} 1 & – \sqrt{2} & 3 \\ – 1 & \sqrt{2} & – 3 \end{bmatrix}, \quad b = \begin{bmatrix} 1 \\ 3 ...
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Feb 15, 2022
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GATE ECE 2024 | Question: 45
Consider the matrix $\left[\begin{array}{ll}1 & k \\ 2 & 1\end{array}\right]$, where $k$ is a positive real number. Which of the following vectors is/are eigenvector(s) of this matrix? $\left[\begin{array}{c}1 \\ -\sqrt{2 / k}\end{array}\right]$ ... $\left[\begin{array}{c}\sqrt{2 k} \\ -1\end{array}\right]$
Consider the matrix $\left[\begin{array}{ll}1 & k \\ 2 & 1\end{array}\right]$, where $k$ is a positive real number. Which of the following vectors is/are e...
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46.4k
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264
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admin
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Feb 16
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gateece-2024
matrix-analysis
matrices
eigen-values
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103
GATE ECE 1994 | Question 2.7
The forward dynamic resistance of a junction diode varies ________ as the forward current.
The forward dynamic resistance of a junction diode varies ________ as the forward current.
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Sep 19, 2022
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gate1994-ec
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GATE ECE 1997 | Question 3.11
The skin depth at $10\; \mathrm{MHz}$ for a conductor is $1 \; \mathrm{cm}$. The phase velocity of an electromagnetic wave in the conductor at $1,000 \; \mathrm{MHz}$ is about $6 \times 10^{6} \mathrm{~m} / \mathrm{sec}$ $6 \times 10^{7} \mathrm{~m} / \mathrm{sec}$ $3 \times 10^{8} \mathrm{~m} / \mathrm{sec}$ $6 \times 10^{8} \mathrm{~m} / \mathrm{sec}$
The skin depth at $10\; \mathrm{MHz}$ for a conductor is $1 \; \mathrm{cm}$. The phase velocity of an electromagnetic wave in the conductor at $1,000 \; \mathrm{MHz}$ is ...
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Oct 2, 2022
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GATE ECE 2005 | Question: 34
The value of the integral $\text{I}=\frac{1}{\sqrt{2 \pi}} \int_{0}^{\infty} \exp \left(-\frac{x^{2}}{8}\right)$ $d x$ is $1$ $\pi$ $2$ $2 \pi$
The value of the integral $\text{I}=\frac{1}{\sqrt{2 \pi}} \int_{0}^{\infty} \exp \left(-\frac{x^{2}}{8}\right)$ $d x$ is$1$$\pi$$2$$2 \pi$
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Sep 22, 2022
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GATE ECE 1994 | Question 2.9
In order to reduce the harmonic distortion in an amplifier, its dynamic range has to be ___________.
In order to reduce the harmonic distortion in an amplifier, its dynamic range has to be ___________.
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Sep 19, 2022
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GATE ECE 2011 | Question: 18
If the unit step response of a network is $\left(1-e^{-\alpha t}\right)$, then its unit impulse response is $\alpha e^{-\alpha t}$ $\alpha^{-1} e^{-\alpha t}$ $\left(1-\alpha^{-1}\right) e^{-\alpha t}$ $(1-\alpha) e^{-\alpha t}$
If the unit step response of a network is $\left(1-e^{-\alpha t}\right)$, then its unit impulse response is$\alpha e^{-\alpha t}$$\alpha^{-1} e^{-\alpha t}$$\left(1-\alph...
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Sep 3, 2022
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GATE ECE 2021 | Question: 43
An asymmetrical periodic pulse train $v_{in}$ of $10\:V$ amplitude with on-time $T_{\text{ON}}=1\:ms$ and off-time $T_{\text{OFF}}=1\:\mu s$ is applied to the circuit shown in the figure. The diode $D_{1}$ is ideal. The difference between the maximum voltage and minimum voltage of the output waveform $v_{o}$ (in integer) is ______________ $V$.
An asymmetrical periodic pulse train $v_{in}$ of $10\:V$ amplitude with on-time $T_{\text{ON}}=1\:ms$ and off-time $T_{\text{OFF}}=1\:\mu s$ is applied to the circuit sho...
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6.6k
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Feb 19, 2021
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GATE ECE 2004 | Question: 44
The neutral base width of a bipolar transistor, biased in the active region, is $0.5 \; \mu \mathrm{m}$. The maximum electron concentration and the diffusion constant in the base are $10^{14} / \mathrm{cm}^{3}$ and $\mathrm{D}_{n}$ $=25 \mathrm{~cm}^{2} / \mathrm{sec}$ ... $8 \mathrm{~A/cm}^{2}$ $200 \mathrm{~A/cm}^{2}$ $2 \mathrm{~A/cm}^{2}$
The neutral base width of a bipolar transistor, biased in the active region, is $0.5 \; \mu \mathrm{m}$. The maximum electron concentration and the diffusion constant in ...
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46.4k
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Sep 25, 2022
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gate2004-ec
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GATE ECE 2021 | Question: 19
Consider the circuit shown in the figure. The value of $v_{0}$ (rounded off to one decimal place) is _________ $V$.
Consider the circuit shown in the figure.The value of $v_{0}$ (rounded off to one decimal place) is _________ $V$.
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Feb 19, 2021
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gateec-2021
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GATE ECE 2021 | Question: 23
A speech signal, band limited to $4\:\text{kHz}$, is sampled at $1.25$ times the Nyquist rate. The speech samples, assumed to be statistically independent and uniformly distributed in the range $-5\:V$ to $+5\:V$, are ... transmission of the signal with arbitrarily small probability of transmission error (rounded off to two decimal places) is _____ $\text{kHz}$.
A speech signal, band limited to $4\:\text{kHz}$, is sampled at $1.25$ times the Nyquist rate. The speech samples, assumed to be statistically independent and uniformly d...
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numerical-answers
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GATE ECE 2023 | Question: 8
A series $\text{RLC}$ circuit has a quality factor $\text{Q}$ of $1000$ at a center frequency of $10^{6} \; \mathrm{rad} / \mathrm{s}$. The possible values of $\text{R, L}$ and $\text{C}$ are $R=1 \; \Omega, L=1 \; \mu H$ and $C=1 \; \mu F$ ... $C=1 \; \mu F$ $R=0.001 \; \Omega, L=1 \; \mu H$ and $C=1 \; \mu F$
A series $\text{RLC}$ circuit has a quality factor $\text{Q}$ of $1000$ at a center frequency of $10^{6} \; \mathrm{rad} / \mathrm{s}$. The possible values of $\text{R,...
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May 20, 2023
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GATE ECE 2023 | Question: 30
In the circuit shown below, $D_1$ and $D_2$ are silicon diodes with cut-in voltage of $0.7 \mathrm{~V}$. $\mathrm{V}_{\mathrm{IN}}$ and $\mathrm{V}_{\mathrm{OUT}}$ are input and output voltages in volts. The transfer characteristic is
In the circuit shown below, $D_1$ and $D_2$ are silicon diodes with cut-in voltage of $0.7 \mathrm{~V}$. $\mathrm{V}_{\mathrm{IN}}$ and $\mathrm{V}_{\mathrm{OUT}}$ are in...
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46.4k
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May 20, 2023
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GATE ECE 2004 | Question: 22
The Fourier transform of a conjugate symmetric function is always imaginary conjugate anti-symmetric real conjugate symmetric
The Fourier transform of a conjugate symmetric function is alwaysimaginaryconjugate anti-symmetricrealconjugate symmetric
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Sep 25, 2022
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GATE ECE 2022 | Question: 8
Consider the $\text{CMOS}$ circuit shown in the figure (substrates are connected to their respective sources). The gate width $(W)$ to gate length $(L)$ ratios $\left( \frac{W}{L} \right)$ of the transistors are as shown. Both the transistors have the same gate oxide capacitance ... $2\; \text{V}$ less than $2 \; \text{V}$ equal to $2 \; \text{V}$
Consider the $\text{CMOS}$ circuit shown in the figure (substrates are connected to their respective sources). The gate width $(W)$ to gate length $(L)$ ratios $\left( \f...
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6.6k
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Feb 15, 2022
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GATE ECE 2023 | Question: 17
Let $m(t)$ be a strictly band-limited signal with bandwidth $B$ and energy $E$. Assuming $\omega_{0}=10 B$, the energy in the $m(t) \cos \omega_{0} t$ is $\frac{E}{4}$ $\frac{E}{2}$ $E$ $2E$
Let $m(t)$ be a strictly band-limited signal with bandwidth $B$ and energy $E$. Assuming $\omega_{0}=10 B$, the energy in the $m(t) \cos \omega_{0} t$ is$\frac{E}{4}$$\f...
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May 20, 2023
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GATE ECE 2000 | Question 2.11
In given figure, the $J$ and $K$ inputs of all the four Flip-Flips are made high. The frequency of the signal at output $Y$ is $0.833 \; \mathrm{kHz}$ $1.0 \; \mathrm{kHz}$ $0.91 \; \mathrm{kHz}$ $0.77 \; \mathrm{kHz}$
In given figure, the $J$ and $K$ inputs of all the four Flip-Flips are made high. The frequency of the signal at output $Y$ is$0.833 \; \mathrm{kHz}$$1.0 \; \mathrm{kHz}$...
admin
46.4k
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Sep 29, 2022
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GATE ECE 1996 | Question 2.9
Value of $R$ in the oscillator circuit shown in the given figure, so chosen that it just oscillates at an angular frequency of $\omega$. The value of $\omega$ and the required value of $R$ ... $10^{5} \; \mathrm{rad} / \mathrm{sec}, 10^{5} \; \Omega$
Value of $R$ in the oscillator circuit shown in the given figure, so chosen that it just oscillates at an angular frequency of $\omega$. The value of $\omega$ and the req...
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46.4k
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248
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Sep 20, 2022
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gate1996-ec
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119
GATE ECE 2023 | Question: 27
The value of the line integral $\int_{P}^{Q}\left(z^{2} d x+3 y^{2} d y+2 x z \; d z\right)$ along the straight line joining the points $P(1,1,2)$ and $Q(2,3,1)$ is $20$ $24$ $29$ $-5$
The value of the line integral $\int_{P}^{Q}\left(z^{2} d x+3 y^{2} d y+2 x z \; d z\right)$ along the straight line joining the points $P(1,1,2)$ and $Q(2,3,1)$ is$20$$2...
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120
GATE ECE 2003 | Question: 44
If $\mathrm{P}$ is Passivation, $\mathrm{Q}$ is $n$-well implant, $\mathrm{R}$ is metallization and $S$ is source/drain diffusion, then the order in which they are carried out in a standard $n$-well CMOS fabrication process, is P-Q-R-S Q-S-R-P R-P-S-Q S-R-Q-P
If $\mathrm{P}$ is Passivation, $\mathrm{Q}$ is $n$-well implant, $\mathrm{R}$ is metallization and $S$ is source/drain diffusion, then the order in which they are carrie...
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