0 0 votes The ideal long channel $n\text{MOSFET}$ and $p\text{MOSFET}$ devices shown in the circuits have threshold voltages of $1 \; \text{V}$ and $ – 1 \; \text{V},$ respectively. The $\text{MOSFET}$ substrates are connected to their respective sources. Ignore leakage currents and assume that the capacitors are initially discharged. For the applied voltages as shown, the steady state voltage are _______________. $V_{1} = 5 \; \text{V}, \quad V_{2} = 5 \; \text{V}$ $V_{1} = 5 \; \text{V}, \quad V_{2} = 4 \; \text{V}$ $V_{1} = 4 \; \text{V}, \quad V_{2} = 5 \; \text{V}$ $V_{1} = 4 \; \text{V}, \quad V_{2} = – 5 \; \text{V}$ BJT and MOSFET Amplifiers gateece-2022 mosfet circuit-analysis nmos-transistor power-electronics + – Arjun 795 views answer comment Share Follow Add Sync Questions Print 0 reply Please log in or register to add a comment.
