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Recent questions tagged gate2012-ec

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41
GATE ECE 2012 | Question: 25
If $x=\sqrt{-1}$, then the value of $x^x$ is $e^{\frac{-\pi}{2}}$ $e^{\frac{\pi}{2}}$ $x$ $1$
If $x=\sqrt{-1}$, then the value of $x^x$ is$e^{\frac{-\pi}{2}}$$e^{\frac{\pi}{2}}$$x$$1$
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42
GATE ECE 2012 | Question: 23
Given $f(z)=\frac{1}{z+1}-\frac{2}{z+3}$. If $C$ is a counterclockwise path in the z-plane such that $\mid z+1 \mid=1$, the value of $\frac{1}{2\pi j}\oint_cf(z)dz$ is $-2$ $-1$ $1$ $2$
Given $f(z)=\frac{1}{z+1}-\frac{2}{z+3}$. If $C$ is a counterclockwise path in the z-plane such that $\mid z+1 \mid=1$, the value of $\frac{1}{2\pi j}\oint_cf(z)dz$ is$-2...
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GATE ECE 2012 | Question: 22
In the circuit shown below, the current through the inductor is $\frac{2}{1+j}\:A$ $\frac{-1}{1+j}\:A$ $\frac{1}{1+j}\:A$ $0\:A$
In the circuit shown below, the current through the inductor is$\frac{2}{1+j}\:A$$\frac{-1}{1+j}\:A$$\frac{1}{1+j}\:A$$0\:A$
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GATE ECE 2012 | Question: 20
A system with transfer function $G(s)=\frac{(s^2+9)(s+2)}{(s+1)(s+3)(s+4)}$ is excited by $\sin(\omega t)$. The steady-state output of the system is zero at $\omega=1\:rad/s$ $\omega=2\:rad/s$ $\omega=3\:rad/s$ $\omega=4\:rad/s$
A system with transfer function$$G(s)=\frac{(s^2+9)(s+2)}{(s+1)(s+3)(s+4)}$$is excited by $\sin(\omega t)$. The steady-state output of the system is zero at$\omega=1\:rad...
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GATE ECE 2012 | Question: 21
The impedance looking into nodes $1$ and $2$ in the given circuit is $50\:\Omega$ $100\:\Omega$ $5\:k\Omega$ $10.1\:k\Omega$
The impedance looking into nodes $1$ and $2$ in the given circuit is$50\:\Omega$$100\:\Omega$$5\:k\Omega$$10.1\:k\Omega$
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GATE ECE 2012 | Question: 18
If $x[n]=(\frac{1}{3})^{|n|}-(\frac{1}{2})^{|n|}u[n]$, then the region of convergence (ROC) of its Z-transform in the Z-plane will be $\frac{1}{3}\lt |z|\lt 3$ $\frac{1}{3}\lt |z|\lt \frac{1}{2}$ $\frac{1}{2}\lt |z|\lt 3$ $\frac{1}{3}\lt |z|$
If $x[n]=(\frac{1}{3})^{|n|}-(\frac{1}{2})^{|n|}u[n]$, then the region of convergence (ROC) of its Z-transform in the Z-plane will be$\frac{1}{3}\lt |z|\lt 3$$\frac{1}{3}...
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GATE ECE 2012 | Question: 12
With initial condition $x(1)=0.5$, the solution of the differential equation, $t\frac{dx}{dt}+x=t$ is $x=t-\frac{1}{2}$ $x=t^2-\frac{1}{2}$ $x=\frac{t^2}{2}$ $x=\frac{t}{2}$
With initial condition $x(1)=0.5$, the solution of the differential equation,$$t\frac{dx}{dt}+x=t$$ is$x=t-\frac{1}{2}$$x=t^2-\frac{1}{2}$$x=\frac{t^2}{2}$$x=\frac{t}{2}$...
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51
GATE ECE 2012 | Question: 14
In the circuit shown $Y=\overline{A} \overline{B}+\bar{C}$ $Y=(A+B)C$ $Y=(\overline{A}+\overline{B})\overline{C}$ $Y=AB+C$
In the circuit shown$Y=\overline{A} \overline{B}+\bar{C}$$Y=(A+B)C$$Y=(\overline{A}+\overline{B})\overline{C}$$Y=AB+C$
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GATE ECE 2012 | Question: 13
The diodes and capacitors in the circuit shown are ideal. The voltage $v(t)$ across the diode $D1$ is $\cos(\omega t)-1$ $\sin(\omega t)$ $1-\cos(\omega t)$ $1-\sin(\omega t)$
The diodes and capacitors in the circuit shown are ideal. The voltage $v(t)$ across the diode $D1$ is$\cos(\omega t)-1$$\sin(\omega t)$$1-\cos(\omega t)$$1-\sin(\omega t)...
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GATE ECE 2012 | Question: 17
The radiation pattern of an antenna in spherical co-ordinates is given by $F(\theta)=\cos^4\theta\:\:\:;\:\:\:0\le \theta\le \frac{\pi}{2}$ The directivity of the antenna is $10\:dB$ $12.6\:dB$ $11.5\:dB$ $18\:dB$
The radiation pattern of an antenna in spherical co-ordinates is given by$$F(\theta)=\cos^4\theta\:\:\:;\:\:\:0\le \theta\le \frac{\pi}{2}$$The directivity of the antenna...
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GATE ECE 2012 | Question: 6
Consider the given circuit. In the circuit, the race around does not occur occurs when $\text{CLK}=0$ occurs when $\text{CLK}=1$ and $A=B=1$ occurs when $\text{CLK}=1$ and $A=B=0$
Consider the given circuit.In the circuit, the race arounddoes not occuroccurs when $\text{CLK}=0$occurs when $\text{CLK}=1$ and $A=B=1$occurs when $\text{CLK}=1$ and $A=...
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GATE ECE 2012 | Question: 8
The $i-v$ characteristics of the diode in the circuit given below are $i = \begin{cases} \frac{v-0.07}{500}\:A, & v\ge0.7\:V \\ \:\:\:\:\:\:\:\:0\:A, & v \lt 0.7\:V \end{cases}$ The current in the circuit is $10\:mA$ $9.3\:mA$ $6.67\:mA$ $6.2\:mA$
The $i-v$ characteristics of the diode in the circuit given below are$$i = \begin{cases} \frac{v-0.07}{500}\:A, & v\ge0.7\:V \\ \:\:\:\:\:\:\:\:0\:A, & v \lt 0.7\:V \en...
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GATE ECE 2012 | Question: 9
In the following figure, $C_1$ and $C_2$ are ideal capacitors. $C_1$ has been charged to $12\:V$ before the ideal switch $S$ is closed at $t=0$. The current $i(t)$ for all $t$ is zero a step function an exponentially decaying function an impulse function
In the following figure, $C_1$ and $C_2$ are ideal capacitors. $C_1$ has been charged to $12\:V$ before the ideal switch $S$ is closed at $t=0$. The current $i(t)$ for al...
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GATE ECE 2012 | Question: 11
The unilateral Laplace transform of $f(t)$ is $\frac{1}{s^2+s+1}$. The unilateral Laplace transform of $tf(t)$ is $-\frac{s}{(s^2+s+1)^2}$ $-\frac{2s+1}{(s^2+s+1)^2}$ $\frac{s}{(s^2+s+1)^2}$ $\frac{2s+1}{(s^2+s+1)^2}$
The unilateral Laplace transform of $f(t)$ is $\frac{1}{s^2+s+1}$. The unilateral Laplace transform of $tf(t)$ is$-\frac{s}{(s^2+s+1)^2}$$-\frac{2s+1}{(s^2+s+1)^2}$$\frac...
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GATE ECE 2012 | Question: 7
The output $Y$ of a $2-\text{bit}$ comparator is logic $1$ whenever the $2-\text{bit}$ input $A$ is greater than the $2-\text{bit}$ input $B$. The number of combinations for which the output is logic $1$, is $4$ $6$ $8$ $10$
The output $Y$ of a $2-\text{bit}$ comparator is logic $1$ whenever the $2-\text{bit}$ input $A$ is greater than the $2-\text{bit}$ input $B$. The number of combinations ...
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61
GATE ECE 2012 | Question: 10
The average power delivered to an impedance $(4-j3)\:\Omega$ by a current $5\cos(100\pi t+100)\:A$ is $44.2\:W$ $50\:W$ $62.5\:W$ $125\:W$
The average power delivered to an impedance $(4-j3)\:\Omega$ by a current $5\cos(100\pi t+100)\:A$ is$44.2\:W$$50\:W$$62.5\:W$$125\:W$
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GATE ECE 2012 | Question: 1
The current $i_b$ through the base of a silicon $npn$ transistor is $1+0.1\cos(10000\pi t)\:mA$. At $300\:K$, the $r_\pi$ in the small signal model of the transistor is $250\:\Omega$ $27.5\:\Omega$ $25\:\Omega$ $22.5\:\Omega$
The current $i_b$ through the base of a silicon $npn$ transistor is $1+0.1\cos(10000\pi t)\:mA$. At $300\:K$, the $r_\pi$ in the small signal model of the transistor is$2...
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