Register

GATE ECE 1991 | Question 1.19

• recategorized by
461 views
0 0 votes
The built-in potential of the gate junction of a $n$-channel $\text{JFET}$ is $0.5$ volts. The drain current saturates at $V_{D S}=4.0$ volts when $V_{G S}=0$. The pinch off voltage is _________.

1 Answer

← Previous · GATE ECE 1991 | Ques...Next → · GATE ECE 1991 | Ques...
Next in category → · GATE ECE 1995 | Ques...
Position:
Show:
Voting & Accepting an answer helps improve the community

Related questions

0 0 votes
0 0 answers
328
328 views
admin asked Sep 4, 2022
328 views
GATE ECE 1991 | Question 1.20
In figure, all transistors are identical and have a high value of beta. The voltage $V_{D C}$ is equal to_________.
0 0 votes
0 0 answers
350
350 views
admin asked Sep 4, 2022
350 views
GATE ECE 1991 | Question 1.23
In figure, the $n$-channel $\text{MOSFETs}$ are identical and their current voltage characteristics are given by the following expressions:For $V_{D S}, I_D=\left[\left(V...
0 0 votes
0 0 answers
252
252 views
admin asked Sep 4, 2022
252 views
GATE ECE 1991 | Question 5
It is required to use a $\text{JFET}$ of figure as linear resistor. The parameters of the $\text{JFET}$ are as follows: $$ \mathrm{W}=100 \mu \mathrm{m}, \mathrm{L}=\mu \...
0 0 votes
0 0 answers
399
399 views
admin asked Sep 4, 2022
399 views
GATE ECE 1991 | Question 1.30
A bit stored in a $\text{FAMOS}$ device can be erased by _____________.

Add Synced Question

×