Recent questions in Electronic Devices

A CMOS inverter, designed to have a mid-point voltage $V_{1}$ equal to half of $V_{dd}.$ as shown in the figure, has the following parameters:$V_{dd}=3V$$\mu_{n} C_{ox}=1...

In the circuit shown, the threshold voltages of the $pMOS\:\: (|V_{tp}|)$ and $nMOS\:\: (V_{tn})$ transistors are both equal to $1\:V.$ All the transistors have the same ...

The figure shows the band diagram of a Metal Oxide Semiconductor (MOS). The surface region of this MOS is ininversionaccumulationdepletionflat band

The figure shows the $I-V$ characteristics of a solar cell illuminated uniformly with solar light of power $100\ mW/cm^2$. The solar cell has an area of $3\ cm^2$ and a ...

In the figure shown, the current $i$ (in ampere) is _________

Figures I and II show two MOS capacitors of unit area. The capacitor in Figure I has insulator materials $X$ (of thickness $t_1 = 1$ nm and dielectric constant $\varepsil...

The $I-V$ characteristics of the zener diodes $D1\:\text{and}\:D2$ are shown in Figure I. These diodes are used in the circuit given in Figure II. If the supply voltage i...

For the circuit shown in the figure, $R_1=R_2=R_3=1\;\Omega,\;L=1\:\mu H$ and $C=1\:\mu F$. If the input $V_{in}=\cos(10^6t)$, then the overall voltage gain $(V_{out}/V_{...

Assume that the diode in the figure has $V_{on}=0.7 \:V$, but it otherwise ideal. The magnitude of the current $i_{2}...

Resistor $R_{1}$ in the circuit below has been adjusted so that $I_{1}=1$ $mA$. The bipolar transistors $Q1$ and $Q2$ are perfectly matched and have very high current gai...

Transistor geometries in a $CMOS$ inverter have been adjusted to meet the requirement for worst case charge and discharge times for driving a load capacitor $C$. This des...

In the given circuit, each resistor has a value equal to $1\Omega$. What is the equivalent resistance across the terminals $a$...

In the circuit shown in the figure, the magnitude of the current (in amperes) through $R_{2}$ is ____

A voltage $V_{G}$ is applied across a $MOS$ capacitor with metal gate and $p$-type silicon substrate at $T=300$ $K$. The inversion carrier density (in number of carriers ...

Consider avalanche breakdown in a silicon $p^{+}n$ junction. The $n$-region is uniformly doped with a donor density $N_{D}.$ Assume that breakdown occurs when the magnitu...

Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $N_{d}^{+}=10^{17} cm^{-3}.$ The electric field at $x = 0$ is $0\: V/cm$ and ...

The figure shows a half-wave rectifier with a $475 \: \mu F$ filter capacitor. The load draws a constant current $I_{o}= 1 \: A$ from the rectifier. The figure also shows...

In the opamp circuit shown, the Zener diodes $Z1$ and $Z2$ clamp the output voltage $V_{0}$ to $+5V$ or $-5 V$. The switch $S$ is initially closed and is opened at time $...

The parallel-plate capacitor shown in the figure has movable plates. The capacitor is charged so that the energy stored in it is $E$ when the plate separation is $d$. The...

Consider the constant current source shown in the figure below. Let $\beta$ represent the current gain of the transistor.The load current $I_0$ through $R_L$ is$I_0 = \bi...