Recent questions in Electronic Devices

Consider a silicon $p-n$ junction with a uniform acceptor doping concentration of $10^{17} cm^{-3}$ on the $p$-side and a uniform donor doping concentration of $10^{16}cm...

Consider an $n$-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of $1.8$ V. Assume that $\frac{W}{L}=4$, $\mu_NC_{ox}= 70...

The figure below shows the doping distribution in a $p$-type semiconductor in log scale.The magnitude of the electric field (in $kV/cm$) in the semiconductor due to non u...

Consider a silicon sample at $T = 300 \: K$, with a uniform donor density $N_d = 5 \times 10 ^{16} cm^{-3}$ , illuminated uniformly such that the optical generation rate ...

A $p-i-n$ photodiode of responsivity $0.8 \: A/W$ is connected to the inverting input of an ideal opamp as shown in the figure, $+V_{CC}= 15 V, \: – V_{CC} = – 15 V$, Lo...

Identify the circuit below.Binary to Gray code converterBinary to XS3 converterGray to Binary converterXS3 to Binary converter

The current density in a medium is given by $${\overrightarrow J= \frac{400 \sin\theta}{2\pi(r^2+4)} \hat {a}_r \: Am^{-2}}$$The total current and the average current den...

In the circuit shown, the current $I$ flowing through the $50\;\Omega$ resistor will be zero if the value of capacitor $C (\text{in}\: \mu F)$ is ______.

The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE?The left sid...

A coaxial capacitor of inner radius $1\: mm$ and outer radius $5\: mm$ has a capacitance per unit length of $172\: pF/m.$ If the ratio of outer radius to inner radius is ...

An $n$-type silicon sample is uniformly illuminated with light which generates $10^{20}$ electron-hole pairs per $cm^{3}$ per second. The minority carrier lifetime in the...

A piece of silicon is doped uniformly with phosphorous with a doping concentration of $10^{16}/cm^{3}.$ The expected value of mobility versus doping concentration for sil...

A dc voltage of $10\: V$ is applied across an $n$-type silicon bar having a rectangular cross-section and a length of $1\:cm$ as shown in figure. The donor doping concent...

In a MOS capacitor with an oxide layer thickness of $10\: nm,$ the maximum depletion layer thickness is $100\: nm.$ The permittivities of the semiconductor and the oxide ...

The energy band diagram and the electron density profile $n(x)$ in a semiconductor are shown in the figures. Assume that $n(x) = 10^{15}e^{\left(\dfrac{q\alpha x}{kT}\rig...

In the given circuit, the values of $V_1$ and $V_2$ respectively are$5$ V, $25$ V$10$ V, $30$ V$15$ V, $35$ V$0$ V, $20$ V

A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction ifboth the P – region and the N – region are heav...

A silicon sample is uniformly doped with donor type impurities with a concentration of $10^{16} / cm^3$. The electron and hole mobilities in the sample are $1200 \: cm^2/...

In the circuit shown below, the Zener diode is ideal and the Zener voltage is $6$ V. The output voltage $V_o$ (in volts) is ________.

In the circuit shown, the switch SW is thrown from position $A$ to position $B$ at time $t=0$. The energy (in $\mu J$) taken from the $3$ V source to charge the $0.1 \: \...