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GATE ECE 2006 | Question: 8
The concentration of minority carriers in an extrinsic semiconductor under equilibrium isdirectly proportional to the doping concentrationinversely proportional to the do...
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446
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GATE ECE 2006 | Question: 9
Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially thediffusion currentdrift currentrecombination c...
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425
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GATE ECE 2006 | Question: 38
The majority carriers in an $n$-type semiconductor have an average drift velocity $\mathrm{V}$ in a direction perpendicular to a uniform magnetic field $\text{B}.$ The el...
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1 1 answer
701
701 views
GATE ECE 2006 | Question: 40
A heavily doped $n$-type semiconductor has the following dataHole-electron mobility ratio : $0.4$Doping concentration : $4.2 \times 10^{8} \; \mathrm{atoms/m}^{3}$Intrins...
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287
287 views
GATE ECE 1994 | Question 1.7
A small concentration of minority carries is injected into a homogeneous semiconductor crystal at one point. An electric field of $10 \mathrm{~V} . \mathrm{cm}$ is applie...
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310
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GATE ECE 1994 | Question 2.8
The transit time of the current carriers through the channel of an $\text{FET}$ decides its _________ chracteristics.
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GATE ECE 1994 | Question 3.4
A $p$-type silicon sample has a higher conductivity compared to an $n$-type sample having the same dopant concentration.
1 1 vote
1 1 answer
808
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GATE ECE 2007 | Question: 9
The electron and hole concentrations in an intrinsic semiconductor are $n_i$ per $\mathrm{cm}^3$ at $300 \mathrm{~K}$. Now, if acceptor impurities are introduced with a c...
1 1 vote
0 0 answers
388
388 views
GATE ECE 2007 | Question: 10
In a $p^{+} n$ junction diode under reverse bias, the magnitude of electric field is maximum atthe edge of the depletion region on the $p$-sidethe edge of the depletion r...
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0 0 answers
329
329 views
GATE ECE 2007 | Question: 32
A $p^{+} n$ junction has a built-in potential of $0.8 \mathrm{~V}$. The depletion layer width at a reverse bias of $1.2 \mathrm{~V}$ is $2 \; \mu \mathrm{m}$. For a rever...
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280
280 views
GATE ECE 2007 | Question: 33
Group I lists four types of $p-n$ junction diodes. Match each device in Group I with one of the options in Group II to indicate the bias condition of that device in its n...
1 1 vote
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302
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GATE ECE 2007 | Question: 72
The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a $\mathrm{Metal} / \mathrm{SiO}_{2} / \text{silicon (MOS)}$ capacitor having an area of ...
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371
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GATE ECE 1993 | Question 6.6
The built-in potential (Diffusion Potential) in a $p-n$ junctionis equal to the difference in the Fermi level of the two sides, expressed in voltsincreases with the incre...
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381
381 views
GATE ECE 2008 | Question: 14
Which of the following is true?A silicon wafer heavily doped with boron is a $p^{+}$substrateA silicon wafer lightly doped with boron is a $p^{+}$ substrateA silicon wafe...
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0 0 answers
449
449 views
GATE ECE 2008 | Question: 18
A silicon wafer has $100 \mathrm{~nm}$ of oxide on it and is inserted in a furnace at a temperature above $1000^{\circ} \mathrm{C}$ for further oxidation in dry oxygen. T...
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249
249 views
GATE ECE 2008 | Question: 51
Silicon is doped with boron to a concentration of $4 \times 10^{17}$ atoms $/ \mathrm{cm}^{3}$. Assume the intrinsic carrier concentration of silicon to be $1.5 \times 10...
1 1 vote
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615
615 views
GATE ECE 2008 | Question: 55
Consider the following assertions.$\text{S1:}$ For Zener effect to occur, a very abrupt junction is required.$\text{S2:}$ For quantum tunneling to occur, a very narrow en...
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280
280 views
GATE ECE 1993 | Question 3.16
A light beam of frequency $1.2 \times 10^{15} \mathrm{~Hz}$ is incident on a metal in a photoelectric effect experiment. The corresponding maximum kinetic energy of the e...
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270
270 views
GATE ECE 1993 | Question 3.17
Consider the semiconductors $\mathrm{A}$ and $\mathrm{B}$. The figure shows variation of $\ln p$ with $I / T$, where $p$ is resistivity and $\mathrm{T}$ the temperature, ...
1 1 vote
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371
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GATE ECE 2009 | Question: 5
In an n-type silicon crystal at room temperature, which of the following can have a concentration of $4 \times 10^{19} \mathrm{~cm}^{-3}$ ?Silicon atomsHolesDopant atomsV...
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