Recent questions in Electronic Devices

The resistivity of a uniformloy doped $n$-type silicon sample is $0.5 \; \Omega-\mathrm{cm}$. If the electron mobility $\left(\mu_{n}\right)$ is $1250 \mathrm{~cm}^{2} / ...

Consider an abrupt $p$-junction. Let $V_{\text {in }}$ be the built-in potential of this junction and $\mathrm{V}_{\mathrm{R}}$ be the applied reverse bias. If the juncti...

Consider the following statements $\mathrm{S} 1$ and $\mathrm{S} 2$.$\mathrm{S} 1 :$ The threshold voltage $\left(V_{T}\right)$ of a MOS capacitor decreases with increase...

The longest wavelength that can be absorbed by silicon, which has the bandgap of $1.12 \; \mathrm{eV}$, is $1$. If the longest wavelength that can be absorbed by another ...

The bandgap of Silicon at room temperature is$1.3 \; \mathrm{eV}$$0.7 \; \mathrm{eV}$$1.1 \; \mathrm{eV}$$1.4 \; \mathrm{eV}$

A Silicon PN junction at a temperature of $20^{\circ} \mathrm{C}$ has a reverse saturation current of $10$ picoAmperes $(\mathrm{pA})$. The reverse saturation current at ...

The primary reason for the widespread use of Silicon in semiconductor device technology isaboundance of Silicon on the surface of the Earth.larger bandgap of Silicon in c...

A Silicon sample $\mathrm{A}$ is doped with $10^{18}$ atoms $/ \mathrm{cm}^{3}$ of Boron. Another sample $\mathrm{B}$ of identical dimensions is doped with $10^{18}$ atom...

A Silicon PN junction diode under reverse bias has depletion region of width $10 \; \mu \mathrm{m}$. The relative permittivity of Silicon,$\varepsilon_{r}=11.7$ and the p...

The drift velocity of electrons, in siliconis proportional to the electric field for all values of electric fieldis independent of the electric fieldincreases at low valu...

The diffusion potential across a $\text{P-N}$ junctiondecreases with increasing doping concentrationincreases with decreasing band gapdoes not depend on doping concentrat...

In a $\text{P}$ type silicon sample, the hole concentration is $2.25 \times 10^{15} / \mathrm{cm}^{3}$. If the intrinsic carrier concentration is $1.5 \times 10^{10} / \m...

The depletion capacitance, $\mathrm{C}_{\mathrm{J}}$, of an abrupt $\mathrm{P}-\mathrm{N}$ junction with constant doping on either side varies with reverse bias, $V_{R^{\...

Copper behaves as aconductor alwaysconductor or dielectric depending on the applied electric field strengthconductor or dielectric depending on the frequencyconductor or ...

An $n$ – channel $\text{JFET}$ has $\mathrm{I}_{\text {DSS }}=1 \mathrm{~mA}$ and $\mathrm{V}_{P}=-5 \mathrm{~V}$.Its maximum transconductance is _________.

In a $\text{JFET}$ if(A) the pinch-off voltage decreases(B) the transconductance increases(C) the transit time of the carriers in the channel is reducedthe channel dopin...

In an extriansic semiconductor if(A) the resistivity decreases(B) the temperature coefficient of resistivity is negative(C) the photo conductivity is low the doping conce...

The $p$ – type substrate in a conventional $p n$ – junction isolated integrated circuit should be connected tonowhere, i.e. left floatinga $dc$ ground potentialthe most p...

The values of voltage $\left(\mathrm{V}_{\mathrm{D}}\right)$ across a tunnel-diode corresponding to peak and valley currents are $\text{V}_{\text{P}}$ and $\text{V}_{\tex...