0 0 votes A bipolar transistor is operating in the active region with a collector current of $1 \mathrm{~mA}$. Assuming that the $\beta$ of the transistor is $100$ and the thermal voltage $\left(\mathrm{V}_{\mathrm{T}}\right)$ is $25 \; \mathrm{mV}$, the transconductance $\left(g_{m}\right)$ and the input resistance $\left(r_{n}\right)$ of the transistor in the common emitter configuration, are $g_{m}=25 \mathrm{~mA} / \mathrm{V}$ and $r_{n}=15.625 \; \mathrm{k} \Omega$ $g_{\mathrm{m}}=40 \mathrm{~mA} / \mathrm{V}$ and $r_{n}=4.0 \; \mathrm{k}\Omega$ $g_{m}=25 \mathrm{~mA} / \mathrm{V}$ and $r_{n}=2.5 \; \mathrm{k} \Omega$ $g_{m}=40 \mathrm{~mA} / \mathrm{V}$ and $r_{n}=2.5 \; \mathrm{k} \Omega$ BJT and MOSFET Amplifiers gate2004-ec bipolar-junction-transistor bjt-and-mosfet-amplifiers electronic-devices analog-circuits + – admin 250 views answer comment Share Follow Add Sync Questions Print 0 reply Please log in or register to add a comment.
