• recategorized by
286 views
0 0 votes

Consider the following statements $\mathrm{S} 1$ and $\mathrm{S} 2$.

$\text{S1 :}$ The $\beta$ of a bipolar transistor reduces if the base width is increased.
$\text{S2 :}$ The $\beta$ of a bipolar transistor increases if the doping concentration in the base is increased.

Which one of the following is correct?

  1. $\text{S1}$ is FALSE and $\text{S2}$ is TRUE
  2. Both $\text{S1}$ and $\text{S2}$ are TRUE
  3. Both $\text{S1}$ and $\text{S2}$ are FALSE
  4. $\mathrm{S} 1$ is TRUE and $\mathrm{S} 2$ is FALSE

Please log in or register to answer this question.

Answer:
Position:
Show:

Related questions

0 0 votes
0 0 answers
334
334 views
admin asked Sep 25, 2022
334 views
If for a silicon $n-p-n$ transistor, the base-to-emitter voltage $\left(\mathrm{V}_{\mathrm{KE}}\right)$ is $0.7 \mathrm{~V}$ and the collector-to-base voltage $\left(\ma...
0 0 votes
1 1 answer
1.1k
1.1k views
admin asked Sep 25, 2022
1,116 views
The neutral base width of a bipolar transistor, biased in the active region, is $0.5 \; \mu \mathrm{m}$. The maximum electron concentration and the diffusion constant in ...
0 0 votes
0 0 answers
257
257 views
admin asked Sep 25, 2022
257 views
A bipolar transistor is operating in the active region with a collector current of $1 \mathrm{~mA}$. Assuming that the $\beta$ of the transistor is $100$ and the thermal ...
0 0 votes
0 0 answers
444
444 views
admin asked Sep 25, 2022
444 views
The impurity commonly used for realizing the base region of a silicon $n-p-n$ transistor isGalliumIndiumBoronPhosphorus

Add Synced Question

×