Most viewed questions in Electronic Devices / GO Electronics

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41

GATE ECE 2015 Set 2 | Question: 9
An $n$-type silicon sample is uniformly illuminated with light which generates $10^{20}$ electron-hole pairs per $cm^{3}$ per second. The minority carrier lifetime in the sample is $1\mu s$. In the steady state, the hole concentration in the sample is approximately $10^{x}$, where $x$ is an integer. The value of $x$ is _______.

An $n$-type silicon sample is uniformly illuminated with light which generates $10^{20}$ electron-hole pairs per $cm^{3}$ per second. The minority carrier lifetime in the...

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42

GATE ECE 2016 Set 3 | Question: 12
The figure shows the $I-V$ characteristics of a solar cell illuminated uniformly with solar light of power $100\ mW/cm^2$. The solar cell has an area of $3\ cm^2$ and a fill factor of $0.7$. The maximum efficiency (in $\%$) of the device is _______

The figure shows the $I-V$ characteristics of a solar cell illuminated uniformly with solar light of power $100\ mW/cm^2$. The solar cell has an area of $3\ cm^2$ and a ...

Milicevic3306

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43

GATE ECE 2015 Set 1 | Question: 9
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if both the P - region and the N - region are heavily doped the N - region is heavily doped compared to the P - region the P ... doped compared to the N - region an intrinsic silicon region is inserted between the P - region and the N - region

A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction ifboth the P – region and the N – region are ...

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44

GATE ECE 2020 | Question: 34
A $pn$ junction solar cell of area $1.0\:cm^{2}$, illuminated uniformly with $100\:mW\:cm^{-2}$, has the following parameters: Efficiency $= 15\%$, open circuit voltage $= 0.7\:V$, fill factor $= 0.8$, and thickness $=200 \mu m$ ... $0.84\times 10^{19}.$ $5.57\times 10^{19}.$ $1.04\times 10^{19}.$ $83.60\times 10^{19}.$

A $pn$ junction solar cell of area $1.0\:cm^{2}$, illuminated uniformly with $100\:mW\:cm^{-2}$, has the following parameters: Efficiency $= 15\%$, open circuit voltage $...

go_editor

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45

GATE ECE 2017 Set 1 | Question: 10
An $n^+-n$ Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of $N_{D1}=1\times 10^{18}cm^{-3}$ and $N_{D2}=1\times 10^{15}cm^{-3}$ corresponding to the $n^+$ and $n$ regions respectively. At the operational temperature $T$, ... of the build-in potential of this device? $0.748 \: V$ $0.460 \: V$ $0.288 \: V$ $0.173 \: V$

An $n^+-n$ Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of $N_{D1}=1\times 10^{18}cm^{-3}$ and $N_{D2}=1\times 10^{15}cm^{-3}$...

admin

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46

GATE ECE 2016 Set 2 | Question: 52
The parallel-plate capacitor shown in the figure has movable plates. The capacitor is charged so that the energy stored in it is $E$ when the plate separation is $d$. The capacitor is then isolated electrically and the plate are moved such that the plate ... , what is the energy stored in the capacitor, neglecting fringing effects? $2E$ $\sqrt{2}E$ $E$ $E/2$

The parallel-plate capacitor shown in the figure has movable plates. The capacitor is charged so that the energy stored in it is $E$ when the plate separation is $d$. The...

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47

GATE ECE 2019 | Question: 35
The quantum efficiency $(\eta)$ and responsivity $(R)$ at wavelength $\lambda \:(\text{in}\: \mu m)$ in a p-i-n photodetector are related by $R= \frac{\eta \times \lambda}{1.24}$ $R= \frac{\lambda}{\eta \times 1.24}$ $R= \frac{1.24 \times\lambda}{\eta}$ $R= \frac{1.24}{\eta \times \lambda}$

The quantum efficiency $(\eta)$ and responsivity $(R)$ at wavelength $\lambda \:(\text{in}\: \mu m)$ in a p-i-n photodetector are related by$R= \frac{\eta \times \lambda}...

Arjun

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48

GATE ECE 2016 Set 2 | Question: 14
Resistor $R_{1}$ in the circuit below has been adjusted so that $I_{1}=1$ $mA$. The bipolar transistors $Q1$ and $Q2$ are perfectly matched and have very high current gain, so their base currents are negligible. The supply voltage $V_{cc}$ is $6$ $V$. The thermal ... $KT/q$ is $26$ $mV$. The value of $R_{2}$ (in $\Omega)$ for which $I_{2}=100\mu A$ is _________

Resistor $R_{1}$ in the circuit below has been adjusted so that $I_{1}=1$ $mA$. The bipolar transistors $Q1$ and $Q2$ are perfectly matched and have very high current gai...

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49

GATE ECE 2018 | Question: 18
A $\text{p-n}$ step junction diode with a contact potential of $0.65\:V$ has a depletion width of $1\:\mu m$ at equilibrium. The forward voltage (in volts, correct to two decimal places) at which this width reduces to $0.6\:\mu m$ is __________.

A $\text{p-n}$ step junction diode with a contact potential of $0.65\:V$ has a depletion width of $1\:\mu m$ at equilibrium. The forward voltage (in volts, correct to two...

gatecse

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50

GATE ECE 2014 Set 1 | Question: 35
The doping concentrations on the $p$-side and $n$-side of a silicon diode are $1\times 10^{16}\:cm^{-3}$ and $1\times 10^{17}\:cm^{-3},$ respectively. A forward bias of $0.3\:V$ is applied to the diode. At $T = 300\:K,$ ... $1\times 10^{16}\:cm^{-3}$ $1\times 10^{17}\:cm^{-3}$ $2.25\times 10^{6}\:cm^{-3}$

The doping concentrations on the $p$-side and $n$-side of a silicon diode are $1\times 10^{16}\:cm^{-3}$ and $1\times 10^{17}\:cm^{-3},$ respectively. A forward bias of $...

Milicevic3306

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51

GATE ECE 2019 | Question: 50
Consider a long-channel MOSFET with a channel length $1\:\mu m$ and width $10\: \mu m.$ The device parameters are acceptor concentration $N_{A}=5 \times 10^{16}\: cm^{-3},$ electron mobility $\mu_{n}=800\: cm^{2}/V-s,$ ... _______ $mA$ (rounded off to two decimal places.). $[\varepsilon_{0}=8.854 \times 10^{-14}F/cm, \varepsilon_{si} =11.9]$

Consider a long-channel MOSFET with a channel length $1\:\mu m$ and width $10\: \mu m.$ The device parameters are acceptor concentration $N_{A}=5 \times 10^{16}\: cm^{-3}...

Arjun

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52

GATE ECE 2016 Set 2 | Question: 40
In the opamp circuit shown, the Zener diodes $Z1$ and $Z2$ clamp the output voltage $V_{0}$ to $+5V$ or $-5 V$. The switch $S$ is initially closed and is opened at time $t=0$. The time $t=t_{1}$ (in seconds) at which $V_{0}$ changes state is ________

In the opamp circuit shown, the Zener diodes $Z1$ and $Z2$ clamp the output voltage $V_{0}$ to $+5V$ or $-5 V$. The switch $S$ is initially closed and is opened at time $...

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53

GATE ECE 2015 Set 3 | Question: 33
The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE? The left side of the junction is n-type and the right side is p-type Both the n-type and p-type depletion ... $10^{16}\: cm^{-3}$

The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE?The left sid...

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54

GATE ECE 2013 | Question: 10
In the circuit shown below what is the output voltage $(V_{\text{out}})$ if a silicon transistor $Q$ and an ideal op-amp are used? $-15\: V$ $-0.7\: V$ $+0.7\: V$ $+15\: V$

In the circuit shown below what is the output voltage $(V_{\text{out}})$ if a silicon transistor $Q$ and an ideal op-amp are used?$-15\: V$$-0.7\: V$$+0.7\: V$$+15\: V$

Milicevic3306

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55

GATE ECE 2012 | Question: 52
An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$. The magnetic field at a distance $r$ from the center of the wire is proportional to $r$ for $r\lt a$ and $\frac{1}{r^2}$ for $r\gt a$ $0$ for $r\lt a$ ... $r\lt a$ and $\frac{1}{r}$ for $r\gt a$ $0$ for $r\lt a$ and $\frac{1}{r^2}$ for $r\gt a$

An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$.The magnetic field at a distance $r$ from the center of t...

Milicevic3306

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56

GATE ECE 2014 Set 2 | Question: 36
When a silicon diode having a doping concentration of $N_{A}= 9\times 10^{16}cm^{-3}$ on $p$-side and $N_{D}= 1 \times 10^{16}cm^{-3}$ on $n$-side is reverse biased, the total depletion width is found to be $3 \mu$ ... $0.3 \mu m$ and $0.42 \times 10^{5} V/cm$ $2.1 \mu m$ and $0.42 \times 10^{5} V/cm$

When a silicon diode having a doping concentration of $N_{A}= 9\times 10^{16}cm^{-3}$ on $p$-side and $N_{D}= 1 \times 10^{16}cm^{-3}$ on $n$-side is reverse biased, the...

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57

GATE ECE 2012 | Question: 8
The $i-v$ characteristics of the diode in the circuit given below are $i = \begin{cases} \frac{v-0.07}{500}\:A, & v\ge0.7\:V \\ \:\:\:\:\:\:\:\:0\:A, & v \lt 0.7\:V \end{cases}$ The current in the circuit is $10\:mA$ $9.3\:mA$ $6.67\:mA$ $6.2\:mA$

The $i-v$ characteristics of the diode in the circuit given below are$$i = \begin{cases} \frac{v-0.07}{500}\:A, & v\ge0.7\:V \\ \:\:\:\:\:\:\:\:0\:A, & v \lt 0.7\:V \en...

Milicevic3306

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58

GATE ECE 2013 | Question: 31
The following arrangement consists of an ideal transformer and an attenuator which attenuates by a factor of $0.8.$ An ac voltage $V_{WX1} = 100V$ is applied across $WX$ to get an open circuit voltage $V_{YZ1}$ across $YZ.$ Next, an ac voltage $V_{YZ2}= 100V$ is ... , $125/100$ and $80/100$ $100/100$ and $80/100$ $100/100$ and $100/100$ $80/100$ and $80/100$

The following arrangement consists of an ideal transformer and an attenuator which attenuates by a factor of $0.8.$ An ac voltage $V_{WX1} = 100V$ is applied across $WX$ ...

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59

GATE ECE 2016 Set 1 | Question: 13
Consider the constant current source shown in the figure below. Let $\beta$ represent the current gain of the transistor. The load current $I_0$ through $R_L$ is $I_0 = \bigg( \frac{\beta+1}{\beta} \bigg) \frac{V_{ref}}{R}$ ... $I_0 = \bigg (\frac{\beta}{\beta+1} \bigg) \frac{V_{ref}}{2R}$

Consider the constant current source shown in the figure below. Let $\beta$ represent the current gain of the transistor.The load current $I_0$ through $R_L$ is$I_0 = \bi...

Milicevic3306

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60

GATE ECE 2018 | Question: 20
There are two photolithography systems: one with light source of wavelength $\lambda _{1}=156\:nm$ (System $1$) and another with light source of wavelength $\lambda _{2}=325\:nm$ (System $2$). Both photolithography systems are otherwise identical. If ... $L_{min2}$ respectively, the ratio $L_{min1}/L_{min2}$ (correct to two decimal places) is __________.

There are two photolithography systems: one with light source of wavelength $\lambda _{1}=156\:nm$ (System $1$) and another with light source of wavelength $\lambda _{2}=...

gatecse

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61

GATE ECE 2018 | Question: 26
The circuit shown in the figure is used to provide regulated voltage $(5 V)$ across the $1\: k\Omega$ resistor. Assume that the Zener diode has a constant reverse breakdown voltage for a current range, starting from a minimum required Zener current, $I_{Z min}=2\:mA$ to its ... $10\:mW$ $100\:\Omega$ and $40\:mW$ $100\:\Omega$ and $10\:mW$ $186\:\Omega$ and $40\:mW$

The circuit shown in the figure is used to provide regulated voltage $(5 V)$ across the $1\: k\Omega$ resistor. Assume that the Zener diode has a constant reverse breakdo...

gatecse

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62

GATE ECE 2015 Set 1 | Question: 8
In the given circuit, the values of $V_1$ and $V_2$ respectively are $5$ V, $25$ V $10$ V, $30$ V $15$ V, $35$ V $0$ V, $20$ V

In the given circuit, the values of $V_1$ and $V_2$ respectively are$5$ V, $25$ V$10$ V, $30$ V$15$ V, $35$ V$0$ V, $20$ V

Milicevic3306

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63

GATE ECE 2019 | Question: 53
A CMOS inverter, designed to have a mid-point voltage $V_{1}$ equal to half of $V_{dd}.$ as shown in the figure, has the following parameters: $V_{dd}=3V$ $\mu_{n} C_{ox}=100\: \mu A/V^{2}; V_{tn}=0.7\:V $ for $\text{nMOS}$ ... of $\left(\frac{W}{L}\right)_{n}$ to $\left(\frac{W}{L}\right)_{p}$ is equal to _______ (rounded off to $3$ decimal places).

A CMOS inverter, designed to have a mid-point voltage $V_{1}$ equal to half of $V_{dd}.$ as shown in the figure, has the following parameters:$V_{dd}=3V$$\mu_{n} C_{ox}=1...

Arjun

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64

GATE ECE 2019 | Question: 36
Two identical copper wires $W1$ and $W2$ placed in parallel as shown in the figure, carry currents $I$ and $2I$, respectively, in opposite directions. If the two wires are separated by a distance of $4r$, then the magnitude of the magnetic field $\overrightarrow{B}$ between the wires at a ... $\frac{5\mu_{0}I}{6\pi r}$ $\frac{\mu_{0}^{2}I^{2}}{2\pi r^{2}}$

Two identical copper wires $W1$ and $W2$ placed in parallel as shown in the figure, carry currents $I$ and $2I$, respectively, in opposite directions. If the two wires ar...

Arjun

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65

GATE ECE 2015 Set 1 | Question: 12
In the circuit shown below, the Zener diode is ideal and the Zener voltage is $6$ V. The output voltage $V_o$ (in volts) is ________.

In the circuit shown below, the Zener diode is ideal and the Zener voltage is $6$ V. The output voltage $V_o$ (in volts) is ________.

Milicevic3306

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66

GATE ECE 2016 Set 3 | Question: 38
Figures I and II show two MOS capacitors of unit area. The capacitor in Figure I has insulator materials $X$ (of thickness $t_1 = 1$ nm and dielectric constant $\varepsilon_1=4$) and $Y$ (of thickness $t_2 = 3$ ... of thickness $t_{Eq}$. If the capacitors are of equal capacitance, then the value of $t_{Eq}$ (in nm) is _________

Figures I and II show two MOS capacitors of unit area. The capacitor in Figure I has insulator materials $X$ (of thickness $t_1 = 1$ nm and dielectric constant $\varepsil...

Milicevic3306

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67

GATE ECE 2016 Set 3 | Question: 39
The $I-V$ characteristics of the zener diodes $D1\:\text{and}\:D2$ are shown in Figure I. These diodes are used in the circuit given in Figure II. If the supply voltage is varied from $0$ to $100$ V,then breakdown occurs in $D1$ only $D2$ only both $D1$ and $D2$ none of $D1$ and $D2$

The $I-V$ characteristics of the zener diodes $D1\:\text{and}\:D2$ are shown in Figure I. These diodes are used in the circuit given in Figure II. If the supply voltage i...

Milicevic3306

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68

GATE ECE 2014 Set 3 | Question: 35
The slope of the $I_{D}$ vs. $V_{GS}$ curve of an n-channel MOSEFT in linear regime is $10^{-3}\Omega ^{-1}$ at $V_{DS}= 0.1 \: V$. For the same device, neglecting channel length modulation, the slope of the $\sqrt{I_{D} }$ vs. $V_{GS}$ curve (in $\sqrt{A}/V$) under saturation regime is approximately _________.

The slope of the $I_{D}$ vs. $V_{GS}$ curve of an n-channel MOSEFT in linear regime is $10^{-3}\Omega ^{-1}$ at $V_{DS}= 0.1 \: V$. For the same device, neglecting channe...

Milicevic3306

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69

GATE ECE 2012 | Question: 9
In the following figure, $C_1$ and $C_2$ are ideal capacitors. $C_1$ has been charged to $12\:V$ before the ideal switch $S$ is closed at $t=0$. The current $i(t)$ for all $t$ is zero a step function an exponentially decaying function an impulse function

In the following figure, $C_1$ and $C_2$ are ideal capacitors. $C_1$ has been charged to $12\:V$ before the ideal switch $S$ is closed at $t=0$. The current $i(t)$ for al...

Milicevic3306

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70

GATE ECE 2014 Set 4 | Question: 9
In the figure, $\text{ln }(\rho _i)$ is plotted as a function of $1/T$, where $\rho_i$ is the intrinsic resistivity of silicon, $T$ is the temperature, and the plot is almost linear. The slope of the line can be used to estimate band gap ... the sum of electron and hole mobility in silicon $(\mu _n + \mu _p)^{-1}$ intrinsic carrier concentration of silicon $(n_i)$

In the figure, $\text{ln }(\rho _i)$ is plotted as a function of $1/T$, where $\rho_i$ is the intrinsic resistivity of silicon, $T$ is the temperature, and the plot is al...

Milicevic3306

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71

GATE ECE 2013 | Question: 51
Consider the following figure The current in the $1\Omega$ resistor in $\text{Amps}$ is $2$ $3.33$ $10$ $12$

Consider the following figure The current in the $1\Omega$ resistor in $\text{Amps}$ is$2$$3.33$ $10$ $12$

Milicevic3306

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72

GATE ECE 2012 | Question: 1
The current $i_b$ through the base of a silicon $npn$ transistor is $1+0.1\cos(10000\pi t)\:mA$. At $300\:K$, the $r_\pi$ in the small signal model of the transistor is $250\:\Omega$ $27.5\:\Omega$ $25\:\Omega$ $22.5\:\Omega$

The current $i_b$ through the base of a silicon $npn$ transistor is $1+0.1\cos(10000\pi t)\:mA$. At $300\:K$, the $r_\pi$ in the small signal model of the transistor is$2...

Milicevic3306

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73

GATE ECE 2016 Set 1 | Question: 36
Consider a silicon $p-n$ junction with a uniform acceptor doping concentration of $10^{17} cm^{-3}$ on the $p$-side and a uniform donor doping concentration of $10^{16}cm^{-3}$ on the $n$ ... $nC \: cm^{-2}$) in the depletion region on the $p$-side is _________

Consider a silicon $p-n$ junction with a uniform acceptor doping concentration of $10^{17} cm^{-3}$ on the $p$-side and a uniform donor doping concentration of $10^{16}cm...

Milicevic3306

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74

GATE ECE 2017 Set 2 | Question: 9
An n-channel enhancement mode MOSFET is biased at $V_{GS}$ >$V_{TH}$ and $V_{DS}$ > $(V_{GS}-V_{TH})$, where $V_{GS}$ is the gate-to-source voltage, $V_{DS}$ is the drain-to- ... voltage source with zero output impedance voltage source with non-zero output impedance current source with finite output impedance current source with infinite output impedance

An n-channel enhancement mode MOSFET is biased at $V_{GS}$ >$V_{TH}$ and $V_{DS}$ $(V_{GS}-V_{TH})$, where $V_{GS}$ is the gate-to-source voltage, $V_{DS}$ is the drai...

admin

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admin asked Nov 23, 2017

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75

GATE ECE 2014 Set 2 | Question: 32
In the figure shown, the capacitor is initially uncharged. Which one of the following expressions describes the current $I(t)$ (in mA) for $t > 0$? $I(t)= \frac{5}{3}(1-e^{-t/ \tau}), \tau= \frac{2}{3} \text{msec} \\$ ... $I(t)= \frac{5}{2}(1-e^{-t/\tau}), \tau= 3 \text{msec}$

In the figure shown, the capacitor is initially uncharged. Which one of the following expressions describes the current $I(t)$ (in mA) for $t 0$? $I(t)= ...

Milicevic3306

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76

GATE ECE 2013 | Question: 34
The small-signal resistance $(i.e., dV_{B}/dI_{D})$ in $k\Omega$ offered by the $n$-channel $MOSFET\: M$ shown in the figure below, at a bias point of $V_{B} = 2\: V$ is (device data for $M:$ ... $V_{TN} = 1\: V,$ and neglect body effect and channel length modulation effects) $12.5$ $25$ $50$ $100$

The small-signal resistance $(i.e., dV_{B}/dI_{D})$ in $k\Omega$ offered by the $n$-channel $MOSFET\: M$ shown in the figure below, at a bias point of $V_{B} = 2\: V$ is ...

Milicevic3306

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77

GATE ECE 2015 Set 2 | Question: 34
In a MOS capacitor with an oxide layer thickness of $10\: nm,$ the maximum depletion layer thickness is $100\: nm.$ The permittivities of the semiconductor and the oxide layer are $\varepsilon_{s}$ and $\varepsilon_{ox}$ respectively. ... the ratio of the maximum capacitance to the minimum capacitance of this MOS capacitor is ________.

In a MOS capacitor with an oxide layer thickness of $10\: nm,$ the maximum depletion layer thickness is $100\: nm.$ The permittivities of the semiconductor and the oxide ...

Milicevic3306

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78

GATE ECE 2015 Set 1 | Question: 13
In the circuit shown, the switch SW is thrown from position $A$ to position $B$ at time $t=0$. The energy (in $\mu J$) taken from the $3$ V source to charge the $0.1 \: \mu F$ capacitor from $0$ V t $3$ V is $0.3$ $0.45$ $0.9$ $3$

In the circuit shown, the switch SW is thrown from position $A$ to position $B$ at time $t=0$. The energy (in $\mu J$) taken from the $3$ V source to charge the $0.1 \: \...

Milicevic3306

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79

GATE ECE 2013 | Question: 5
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces superior quality oxide with a higher growth rate inferior quality oxide with a higher growth rate inferior quality oxide with a lower growth rate superior quality oxide with a lower growth rate

In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces superior quality oxide with a higher growth rate inf...

Milicevic3306

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80

GATE ECE 2015 Set 2 | Question: 33
A dc voltage of $10\: V$ is applied across an $n$-type silicon bar having a rectangular cross-section and a length of $1\:cm$ as shown in figure. The donor doping concentration $N_{D}$ and the mobility of electrons $\mu_{n}$ ... The average time $(\text{in}\: \mu s)$ taken by the electrons to move from one end of the bar to other end is ________.

A dc voltage of $10\: V$ is applied across an $n$-type silicon bar having a rectangular cross-section and a length of $1\:cm$ as shown in figure. The donor doping concent...

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